阅读说明：本技术 Igbt模块封装结构及igbt芯片的温度检测方法 (IGBT module packaging structure and temperature detection method of IGBT chip ) 是由 项澹颐 于 2019-11-01 设计创作，主要内容包括：本发明提供了一种IGBT模块封装结构及IGBT芯片的温度检测方法,包括：电性连接层,用于为设置其上的导体元件与外部元件提供电性连接媒介；芯片层,固定设置于电性连接层；端子；以及导线,用于实现电路互连；芯片层和端子经电性连接层由导线电性连接,连接于芯片层和端子之间的导线与电性连接层部分连接,和芯片层和端子经导线直接电性连接的连接方式相比,能够使芯片层产生的热量至少部分经导线和电性连接层接触的区域传导至绝缘基板,这样就减少了导线传导至端子的热量,降低了端子的温度,保证IGBT模块的正常工作,并减少了IGBT模块因过热而损毁的可能,增加了IGBT模块的使用寿命,解决因端子处的热量难于散发而导致IGBT模块可能因过热而损坏的技术问题。(The invention provides an IGBT module packaging structure and a temperature detection method of an IGBT chip, comprising the following steps: the electrical connection layer is used for providing an electrical connection medium for the conductor element and the external element arranged on the electrical connection layer; the chip layer is fixedly arranged on the electric connection layer; a terminal; and conductive lines for implementing circuit interconnections; chip layer and terminal are by wire electric connection through electric connection layer, connect wire and electric connection layer part between chip layer and terminal and be connected, compare with chip layer and terminal through the direct electric connection's of wire connected mode, the heat that can make the chip layer produce is at least partly conducted to insulating substrate through the region of wire and electric connection layer contact, just so reduced the heat that the wire conducted to the terminal, the temperature of terminal has been reduced, guarantee the normal work of IGBT module, and reduced the possibility that the IGBT module damaged because of overheated, the life of IGBT module has been increased, solve because of the heat of terminal department is difficult to give off and lead to the IGBT module probably because of overheated technical problem who damages.)

1. An IGBT module packaging structure, characterized by comprising:

an insulating substrate;

the IGBT chip is arranged on one side of the insulating substrate; and

and the temperature sensing element is attached to one side of the insulating substrate, which is different from the IGBT chip, and is arranged opposite to the IGBT chip through the insulating substrate.

2. The IGBT module package structure of claim 1, further comprising:

and the temperature detection terminal is connected with the temperature sensing element.

3. The IGBT module package structure according to claim 2, wherein the temperature detection terminal is disposed at least partially outside the insulating substrate.

4. The IGBT module package structure of claims 1-3, wherein the temperature sensing element is an insulated thermocouple.

5. The IGBT module package structure of claim 4, further comprising a metal substrate for forming a bottom plate of the IGBT module package structure, wherein a side of the metal substrate near the IGBT chip is provided with a groove for receiving the temperature sensing element.

6. The IGBT module packaging structure of claim 5, wherein the groove is set to a depth of 0.6-0.8 mm and a width of 1.0-1.2 mm.

7. The IGBT module package structure of claim 5, wherein the insulated thermocouple has a working end for directly detecting a case temperature of the IGBT chip and a free end for transferring thermo-electromotive force information to the temperature detection terminal.

8. A temperature detection method of an IGBT chip, for performing temperature detection on the IGBT chip in the IGBT module package structure according to any one of claims 1 to 7, characterized by comprising the steps of:

obtaining the shell temperature T of the IGBT chip through the temperature sensing element_C；

According to the formula

Wherein R is_thAnd P is the thermal resistance between the shell of the IGBT chip and the IGBT chip, and the value of the heat loss of the IGBT chip is P.

9. The method for detecting the temperature of an IGBT chip according to claim 8, wherein the temperature T of the temperature sensing element_CThe temperature sensing element is obtained through a temperature detection terminal connected with the temperature sensing element.

10. The method for detecting the temperature of an IGBT chip according to claim 8 or 9, wherein when the temperature sensing element is an insulated thermocouple, a case temperature T of the IGBT chip_CThe acquisition mode is as follows: firstly, the shell temperature T of the IGBT chip detected by the temperature sensing element is obtained by detecting the thermal electromotive force value of the free end of the temperature sensing element and obtaining the shell temperature T of the IGBT chip detected by the temperature sensing element through the thermal electromotive force value_C。