Fluid assembly substrate and method of manufacture

文档序号:1581090 发布日期:2020-01-31 浏览:30次 中文

阅读说明:本技术 流体组装基片和制备方法 (Fluid assembly substrate and method of manufacture ) 是由 R·A·贝尔曼 R·瓦迪 于 2018-05-31 设计创作,主要内容包括:实施方式涉及具有一个或多个阱结构的基片,每个阱结构具有基本垂直的侧壁和基本平坦的底部。(Embodiments relate to a substrate having or more well structures, each well structure having substantially vertical sidewalls and a substantially flat bottom.)

1, a fluid assembly substrate, the fluid assembly substrate comprising:

a transparent substrate; and

a layer of inorganic fluid structure disposed on the transparent substrate,

wherein the inorganic fluid structure layer is formed of an inorganic material, and wherein the inorganic fluid structure layer comprises a plurality of structures, each structure exposing portions of the top surface of the transparent substrate.

2. The fluid assembly structure of claim 1, wherein the transparent substrate is made of type glass, and wherein the inorganic material is a second type of glass that exhibits a different sensitivity to etching than the type of glass.

3. The fluid assembly substrate of claim 1, wherein the plurality of structures are wells, and wherein sidewalls of each well are substantially perpendicular with respect to a top surface of the transparent substrate.

4. The fluid assembly die of claim 3, wherein the sidewalls of each well have an angle measured from the top surface of the transparent die that is greater than 91 degrees and less than 105 degrees.

5. The fluid assembly die of claim 3, wherein the sidewalls of each well have an angle of greater than 80 degrees and less than 90 degrees measured from the top surface of the transparent die.

6. The fluid assembly substrate of claim 1, wherein a top surface of the transparent substrate exposed by each structures of the plurality of structures is substantially planar.

7. The fluid assembly substrate of claim 1, wherein an electrical connection layer is disposed between the transparent substrate and the inorganic fluid structure layer, and portions of the electrical connection layer are exposed at the bottom of at least of the plurality of structures.

8. The fluid assembly substrate of claim 1, wherein the plurality of structures are wells, each well having a depth greater than 3 microns and a width greater than 40 microns.

9. The fluid assembly substrate of claim 1, wherein the combination of the transparent substrate and the inorganic material is mechanically stable at temperatures up to 600 ℃.

10, a method for manufacturing a fluid assembly substrate, the method comprising:

providing a transparent substrate;

depositing an inorganic material on a transparent substrate to form an inorganic material layer;

forming a patterned hard mask having an opening on top of the inorganic material layer to expose a portion of the inorganic material layer corresponding to a structure location; and

a dry etch directed by the patterned hard mask is performed to open structures in the inorganic material layer that extend to the top surface of the transparent substrate.

11. The method of claim 10 wherein the transparent substrate is made of type glass, and wherein the inorganic material is a second type of glass that exhibits a different etch sensitivity than the type of glass.

12. The method of claim 11, wherein the step of depositing an inorganic material on a transparent substrate comprises performing plasma enhanced chemical vapor deposition of tetraethylorthosilicate on the transparent substrate.

13. The method of claim 10, wherein forming a patterned hard mask on top of the inorganic material layer with openings to expose portions of the inorganic material layer corresponding to structure locations comprises:

depositing nickel on top of the layer of inorganic material;

performing photolithography to define an opening; and

wet etching is performed to expose a portion of the top surface of the inorganic material layer corresponding to the opening.

14. The method of claim 10, wherein the dry etch is selected from the group consisting of: reactive Ion Etching (RIE), and inductively coupled plasma and reactive ion etching (ICP-RIE).

15. The method of claim 10, wherein the structures in the inorganic material layer are wells, and wherein sidewalls of each well are substantially perpendicular with respect to a top surface of the transparent substrate.

16. The method of claim 10, wherein a top surface of the transparent substrate exposed by each structure in the inorganic material layer is substantially planar.

17. The method of claim 10, further comprising:

before depositing the inorganic material on the transparent substrate, an electrical connection layer is formed on top of the transparent substrate to form a layer of inorganic material on both the transparent substrate and the electrical connection layer.

18. The method of claim 17, wherein portions of the electrical connection layer are exposed at the bottom of at least structures in the inorganic material layer by dry etching.

19. The method of claim 10, wherein the structures in the inorganic material layer are wells, each well having a depth greater than 3 microns and a width greater than 40 microns.

20. The method of claim 10, wherein the combination of the transparent substrate and the inorganic material layer is mechanically stable at temperatures up to 600 ℃.

Technical Field

Drawings

A further understanding of various embodiments of the present invention may be realized by reference to the figures which are described in the remaining portions of the specification.

1a-1b depict a fluid assembly system according to one or more embodiments of the present invention that is capable of moving a suspension comprising a carrier liquid and a plurality of objects relative to a fluid assembly substrate comprising a plurality of wells;

FIG. 1c is an image from a scanning electron microscope showing the uneven outer edges of the well sidewalls due in part to the grain size of the material used for the hard mask according to embodiments of the present invention;

2a-2b depict well structures according to embodiments of the invention;

FIG. 2c is an image from a scanning electron microscope showing the substantially vertical sidewalls of a well that can be achieved according to embodiments of the present invention;

FIG. 3 is a flow diagram depicting a method of forming an embodiment of a well structure in a fluid assembly substrate according to various embodiments of the invention;

4a-4b depict well structures according to other embodiments of the present invention;

fig. 5 is a flow chart depicting a method of forming a well structure in a fluid assembly substrate according to an embodiment of step of the present invention.

Embodiments relate to a substrate having or more well structures (well structures), each well structure having substantially vertical sidewalls and a substantially flat bottom.

Background

LED displays, LED display assemblies, and arrayed LED devices include a large number of diodes placed at designated locations across the display or device surface. The fluidic assembly may be used to assemble the diode with respect to the substrate. This assembly is typically a random process whereby the LED devices are deposited into wells on the substrate. Forming such wells on the surface of a substrate using conventional methods typically relies on forming the wells in a polymer film deposited on a glass substrate. Such polymer films exhibit poor transparency and thermal stability. Poor transparency can cause the display to emit a yellow or gray tone. Limited thermal stability limits the compatibility of the process with subsequent electrical contact formation and passivation.

Accordingly, for at least the foregoing reasons, there is a need in the art for advanced systems and methods for fabricating physical structures on a substrate.

SUMMARY

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