阅读说明：本技术 半导体装置 (Semiconductor device with a plurality of semiconductor chips ) 是由 儿玉晃忠 古川将人 于 2019-06-12 设计创作，主要内容包括：本发明公开了一种半导体装置,所述半导体装置包括金属基体、金属框架、半导体元件、馈通件和金属侧板。所述半导体元件在由所述金属基体和所述金属框架限定的空间中被安装在所述金属基体上。所述馈通件被插入到所述金属框架的切口中,并且包括布线、将所述布线安装在其上的下部块以及安装在所述下部块上的上部块。所述下部块和所述上部块的组合截面形状是突出形状。所述上部块的一部分位于所述空间的内部。所述金属侧板设置在所述馈通件的侧表面与所述金属框架的所述切口之间。所述金属侧板具有突出形状并且覆盖所述馈通件的整个侧表面。(A semiconductor device includes a metal base, a metal frame, a semiconductor element, a feedthrough, and a metal side plate. The semiconductor element is mounted on the metal base in a space defined by the metal base and the metal frame. The feedthrough is inserted into a cutout of the metal frame, and includes a wiring, a lower block on which the wiring is mounted, and an upper block mounted on the lower block. The combined cross-sectional shape of the lower block and the upper block is a protruding shape. A portion of the upper block is located inside the space. The metal side plate is disposed between a side surface of the feedthrough and the cutout of the metal frame. The metal side plate has a protruding shape and covers the entire side surface of the feedthrough.)

1. A semiconductor device, the semiconductor device comprising:

a metal substrate;

a metal frame placed on the metal base and provided with at least one cut penetrating the metal frame;

a semiconductor element mounted on the metal base in a space defined by the metal base and the metal frame;

a feedthrough inserted into the cutout of the metal frame and mounted on the metal base, the feedthrough comprising:

a wiring configured to electrically connect the semiconductor element located inside the space with an electrical component located outside the semiconductor device;

a lower block made of ceramic, and on which the wiring is mounted; and

an upper block made of ceramic and mounted on the lower block, wherein a combined sectional shape of the lower block and the upper block is a protruding shape along a mounting direction in which the upper block is mounted on the lower block, and a portion of the upper block is located inside the frame, and

a metal side plate that is provided between a side surface of the feedthrough that spreads out in an extending direction of the wiring and the cutout of the metal frame, that has a protruding shape, and that covers the entire side surface of the feedthrough.

2. The semiconductor device of claim 1, wherein the metal side plate is made of copper.

3. The semiconductor device according to claim 1 or 2, wherein the metal side plate further comprises a triangular reinforcement portion filling a first step of the side plate, the first step being located inside the space.

4. The semiconductor device of claim 3, wherein the feedthrough further comprises a triangular prism-shaped stiffener filling a second step of the feedthrough, the second step being located inside the space.

5. The semiconductor device of any one of claims 1 to 4, wherein the metal side plate has a thickness of at least 300 μm.

6. The semiconductor device according to any one of claims 1 to 5, further comprising at least one circuit located inside the metal frame, wherein the wiring of the feedthrough is configured to electrically connect the semiconductor element to the electrical component via the at least one circuit.

7. The semiconductor device according to any one of claims 1 to 6, further comprising another feedthrough that is inserted into another cutout of the metal frame and is mounted on the metal base.

8. The semiconductor device of claim 7, wherein the other feedthrough comprises:

another wiring configured to electrically connect the semiconductor element with another electrical component located outside the semiconductor device;

another lower block made of ceramic, and on which the other wiring is mounted; and

a further upper block made of ceramic and mounted on the further lower block,

wherein a combined sectional shape of the other lower block and the other upper block is a protruding shape along a mounting direction in which the other upper block is mounted on the other lower block, and a part of the other upper block is located inside the metal frame.

9. The semiconductor device according to claim 7 or 8, wherein the feedthrough, the semiconductor element, and the other feedthrough are arranged along a straight line.

10. The semiconductor device according to any one of claims 1 to 9, further comprising another side plate that covers an entire opposite side surface of the feedthrough.

Technical Field

The present disclosure relates to a semiconductor device.

Background

In the field of semiconductor devices, electronic components such as semiconductor elements may be hermetically sealed so as to be protected from moisture and foreign substances. Signal input and output with respect to the sealed electronic component is performed via the feedthrough. In such a hermetically sealed package, a bump-shaped feedthrough made of alumina is subjected to stress from a metal wall surrounding the feedthrough to generate cracks due to temperature change, so that the hermeticity may be lost. JP2012-038837A discloses a configuration in which the thickness of the upper portion of the feedthrough is formed to be greater than the thickness of the metal wall in order to prevent loss of airtightness.

Disclosure of Invention

The present disclosure provides a semiconductor device. The semiconductor device includes a metal base, a metal frame, a semiconductor element, a feedthrough, and a metal side plate. The metal frame is placed on the metal base. The metal frame is provided with at least one cut-out penetrating the metal frame. The semiconductor element is mounted on the metal base in a space defined by the metal base and the metal frame. The feedthrough is inserted into the cutout of the metal frame and mounted on the metal base. The feedthrough includes a wiring, a lower block, and an upper block. The wiring is configured to electrically connect the semiconductor element located inside the space with an electrical component located outside the semiconductor device. The lower block is made of ceramic, and the wiring is mounted thereon. The upper block is made of ceramic and is mounted on the lower block. The combined cross-sectional shape of the lower block and the upper block is a protrusion shape along a mounting direction in which the upper block is mounted on the lower block. A portion of the upper block is located inside the frame. The metal side plate is disposed between a side surface of the feedthrough that spreads out in an extending direction of the wiring and the cutout of the metal frame. The metal side plate has a protruding shape and covers the entire side surface of the feedthrough.

Drawings

The foregoing and other objects, aspects and advantages will be better understood from the following detailed description of embodiments of the disclosure with reference to the drawings, in which:

fig. 1 is a plan view of a semiconductor device according to a first embodiment;

fig. 2 is a cross-sectional view of the semiconductor device taken along line II-II in fig. 1;

fig. 3 is a view illustrating a feedthrough and a pair of side plates in a semiconductor device according to a first embodiment;

fig. 4 is a view of a feedthrough of the semiconductor device according to the first embodiment, viewed from the inside;

fig. 5 is a perspective view showing a feedthrough joined by side plates in a semiconductor device according to a second embodiment. And

fig. 6 is a perspective view showing a feedthrough joined by side plates in a semiconductor device according to a third embodiment.

Detailed Description

[ problem to be solved by the present disclosure ]

The semiconductor device disclosed in JP2012-038837A can reduce stress concentrated on a connection point between a lower portion of a feedthrough and an upper portion of the feedthrough. However, in a semiconductor device for a satellite or a semiconductor device mounted with a high-power semiconductor element, it has been required to more reliably prevent the occurrence of cracks due to severe temperature conditions and thermal cycles having large temperature variations.

[ advantageous effects of the present disclosure ]

According to the present disclosure, it is possible to provide a semiconductor device in which generation of cracks in a feedthrough due to temperature change is prevented.

[ description of embodiments of the present disclosure ]

Embodiments of the present disclosure will be described. A semiconductor device according to one embodiment of the present disclosure includes a metal base, a metal frame, a semiconductor element, a feedthrough, and a metal side plate. The metal frame is placed on the metal base. The metal frame is provided with at least one cut-out penetrating the metal frame. A semiconductor element is mounted on the metal base in a space defined by the metal base and the metal frame. The feed-through is inserted into a cutout of the metal frame and mounted on the metal base. The feedthrough includes a wiring, a lower block, and an upper block. The wiring is configured to electrically connect the semiconductor element located inside the space with an electrical component located outside the semiconductor device. The lower block is made of ceramic, and the wiring is mounted thereon. The upper block is made of ceramic and is mounted on the lower block. The combined cross-sectional shape of the lower block and the upper block is a protrusion shape along a mounting direction in which the upper block is mounted on the lower block. A portion of the upper block is located inside the frame. The metal side plate is disposed between a side surface of the feedthrough that spreads out in the extending direction of the wiring and the cutout of the metal frame. The metal side plate has a protruding shape and covers the entire side surface of the feedthrough. With this configuration, it is possible to prevent cracks from being generated in the feedthrough due to temperature changes.

As one example, the metal side plate may be made of copper. This configuration can alleviate the stress received by the feedthrough from the metal frame, because the upper block made of ceramic and the lower block made of ceramic of the feedthrough are in contact with the metal frame made of metal by the side plates made of copper and having a small young's modulus.

As an embodiment, the metal side panel may further include a triangular reinforcement filling the first step of the side panel. The first step may be located inside the space. With this structure, it is possible to further alleviate the stress applied to the joint between the upper block made of ceramic and the lower block made of ceramic of the feedthrough.

As one embodiment, the feedthrough may further include a triangular prism-shaped stiffener that fills the second step of the feedthrough. The second step may be located inside the space. With this structure, the joint between the ceramic upper block and the ceramic lower block of the feedthrough is reinforced by the triangular reinforcing portion, so that the influence of stress can be further alleviated.

As an example, the metal side plate may have a thickness of at least 300 μm. With this configuration, it is possible to sufficiently alleviate the stress received by the feedthrough from the metal frame.

As one embodiment, the semiconductor device may include at least one circuit located inside the metal frame. The wiring of the feedthrough may be configured to electrically connect the semiconductor element to the electrical component via the at least one circuit.

As an embodiment, the semiconductor device may further include another feedthrough inserted into another cutout of the metal frame and mounted on the metal base. In this embodiment, the further feedthrough may comprise: another wiring configured to electrically connect the semiconductor element with another electrical component located outside the semiconductor device; another lower block made of ceramic and having wiring mounted thereon; and another upper block made of ceramic and mounted on the other lower block. The combined sectional shape of the other lower block and the other upper block may be a protrusion shape, and a portion of the other upper block may be located inside the metal frame, in a mounting direction in which the other upper block is mounted on the other lower block. In this embodiment, the feedthrough, the semiconductor element and the further feedthrough may be arranged along a straight line.

As an embodiment, the semiconductor device may further include another side plate covering the entire opposite side surface of the feedthrough.

[ details of embodiments of the present disclosure ]

Hereinafter, details of embodiments of a semiconductor device according to the present disclosure will be described with reference to the drawings. In the following description, components denoted by the same reference numerals in different drawings are the same, and in some cases, the description thereof may be omitted. Furthermore, the present invention is not limited to the examples in these embodiments, but includes all modifications within the scope and equivalent scope of the subject matter described in the claims. Further, the present invention includes any combination of the embodiments as long as a combination of a plurality of the embodiments is possible.

[ first embodiment ]

Fig. 1 is a plan view of a semiconductor device according to a first embodiment of the present disclosure, and fig. 2 is a cross-sectional view of the semiconductor device taken along line II-II in fig. 1. As shown in fig. 1 and 2, the semiconductor device 100 includes a metal base 10, a metal frame 20, a lid (cover) 40, an input side branch circuit 31, an output side multiplexing circuit 35, an input matching circuit 32, an output matching circuit 34, a semiconductor chip 33, and two feedthroughs 50. Fig. 1 is a view obtained by looking through the cover 40.

The metal base 10 is formed by: in an area of about 5X 10mm²The surface of the metal having a three-layer structure of Cu (copper)/Mo (molybdenum)/Cu (copper) is plated with, for example, Ni (nickel)/Au (gold). As the material of the metal base 10, Kovar (Kovar), CuW (copper tungsten), CuMo (copper molybdenum), or the like can be used, for example, and the surface can be plated with Au, Ni, Ag (silver), Ag — Pt (platinum), Ag — Pb (lead), or the like. Notches 11 are formed at four places on both sides of the metal base 10 in the X-axis direction, and screws for mounting and fixing the metal base 10 on a substrate are inserted.

A metal frame 20 made of, for example, kovar is provided on the upper side (positive side in the Z-axis direction) of the metal base 10, and the upper side of the metal frame 20 is covered with a cover 40, the cover 40 being made of kovar similarly to the metal frame 20. As the metal material of the metal frame 20 and the cover 40, CuW, CuMo, or the like may be used instead of kovar. The cutouts 21 are respectively provided substantially at the centers of the two walls of the metal frame 20 facing the Y-axis direction, and the feed-throughs 50 for input and output are respectively inserted into the two cutouts 21. In the present embodiment, the metal base 10, the metal frame 20, the lid 40, and the feedthrough 50 constitute a package.

Of the two feedthroughs 50, for example, a feedthrough on the negative side in the Y-axis direction is a feedthrough 50 for input, and a feedthrough on the positive side in the Y-axis direction is a feedthrough 50 for output. A wiring pattern 53 is formed in each feedthrough 50. Each of the wiring patterns 53 extends in the Y-axis direction.

As an electronic component accommodated in the package, a semiconductor chip 33 is mounted on a central portion of the internal space, the semiconductor chip 33 including a Field Effect Transistor (FET) configured by using, for example, a nitride semiconductor, and an input matching circuit 32 for input impedance adjustment and an output matching circuit 34 for output impedance adjustment are mounted, and the semiconductor chip 33 is interposed between the input matching circuit 32 and the output matching circuit 34. Further, the input side branch circuit 31 and the output side multiplexing circuit 35 are arranged outside the input matching circuit 32 and the output matching circuit 34, respectively. Since the width of the semiconductor chip 33 is larger than the wiring pattern 53 which becomes an input terminal or an output terminal, the input side branch circuit 31 and the output side multiplexing circuit 35 are provided to equally distribute input signals to the respective FETs and equally collect outputs from the FETs into the output terminals.

Electronic components of the input side branch circuit 31, the input matching circuit 32, the semiconductor chip 33, the output matching circuit 34, and the output side multiplexing circuit 35 are mounted on the upper surface of the metal base 10, and the metal frame 20 surrounds these electronic components in the XY plane. These electronic components are sealed in a gas-tight manner by the metal base 10, the metal frame 20, the lid 40 and the feedthrough 50. In the semiconductor device 100, the feedthrough 50, the input-side branch circuit 31, the input matching circuit 32, the semiconductor chip 33, the output matching circuit 34, and the output-side multiplexing circuit 35 are arranged along the Y-axis direction, which is a straight line.

The wiring pattern 53 of the feedthrough 50 for input and the input-side branch circuit 31, the input-side branch circuit 31 and the input matching circuit 32, the input matching circuit 32 and the semiconductor chip 33, the semiconductor chip 33 and the output matching circuit 34, the output matching circuit 34 and the output-side multiplexing circuit 35, and the output-side multiplexing circuit 35 and the wiring pattern 53 of the feedthrough 50 for output are electrically connected by bonding wires 30, respectively. The bonding wire 30 is made of, for example, metal such as Au. The wiring pattern 53 is a member for electrically connecting the semiconductor chip 33 and an electrical component located outside the semiconductor device 100 via the input-side branch circuit 31 and the input matching circuit 32 or via the output matching circuit 34 and the output-side multiplexing circuit 35. Further, a back surface electrode is formed on the semiconductor chip 33, and the potential of the back surface electrode is lowered to the ground potential through the metal base 10.

The wiring patterns 53 on the outer sides of the metal frames 20 on the two feedthroughs 50 are provided with leads (not shown). For example, a Radio Frequency (RF) signal is input to the wiring pattern 53 from one of the two leads (on the negative side in the Y-axis direction), and an RF signal is output from the other of the two leads (on the positive side in the Y-axis direction). Further, a bias voltage of the FET of the semiconductor chip 33 is input to the lead. The feedthrough 50 acts as a transmission line and the RF signal flows through the feedthrough 50. The semiconductor device 100 functions as, for example, an amplifier that amplifies an RF signal.

Fig. 3 is a view showing a feedthrough and a pair of side plates in the semiconductor device according to the first embodiment. Fig. 4 is a view of a feedthrough in the semiconductor device according to the first embodiment, viewed from the inside. The feedthrough 50 comprises, for example, a material such as alumina (Al)₂O₃) A lower block 51 made of ceramic, a wiring pattern 53 formed on the upper surface of the lower block 51, and an upper block 52 made of ceramic. The width W2 of the upper block 52 in the Y-axis direction is formed to be larger than the width W1 of the wall of the metal frame 20, and the width of the lower block 51 in the Y-axis direction is formed to be larger than the width W2 of the upper block 52. The upper block 52 is disposed at the center portion in the Y-axis direction of the lower block 51, and both are integrally formed. Therefore, the cross-sectional shapes of the lower block 51 and the upper block 52 along the YZ plane, that is, along the direction (Z-axis direction) perpendicular to the extending direction (Y-axis direction) of the wiring pattern 53 of the feedthrough 50 are protruded. A pair of side plates 60 are respectively provided on the entire surfaces of both side surfaces in the X-axis direction of the feedthrough 50 as a buffer material. Each of the side plates 60 has a protruding shape, and is a metal plate made of, for example, CuAnd (4) forming.

The side plate 60 preferably has a thickness of 300 μm or more, and is bonded to a side surface of the feedthrough 50 made of alumina by a brazing material made of silver (Ag), copper (Cu), nickel (Ni), or the like. The feedthrough 50 incorporating the side plate 60 is inserted into an opening formed by the metal base 10 and the cutout 21 of the metal frame 20. For example, an Ag brazing material is provided in advance between the feedthrough 50 to which the side surface plate 60 is bonded and the opening, and the feedthrough 50 is fixed by heating in the opening formed by the metal base 10 and the cutout 21 of the metal frame 20. At this time, as shown in fig. 4, at least the upper block 52 is arranged to protrude into a space on the inner side of the metal frame 20. That is, the inner portion of the upper block 52 is located inside the metal frame 20. Further, when the feedthrough 50 is fixed, a brazing material or an adhesive is also provided between the metal frame 20 and the metal base 10, and three components of the metal base 10, the metal frame 20, and the feedthrough 50 are fixed.

Herein, when the stress analysis is performed by using the thermal expansion, for example, in a case where the side plate 60 is not provided to the feedthrough 50 shown in fig. 4 and the width W2 of the upper block 52 and the width W1 of the wall of the metal frame 20 are set to be the same, at the boundary portion (step) between the lower block 51 and the upper block 52 shown in a in fig. 4, the stress concentrates at both ends in the X-axis direction of the inside of the space of the metal frame 20. This can also be confirmed by actual cracks that occur. The boundary portion between the lower block 51 and the upper block 52 is where different members are bonded (but the materials of the components are substantially the same), and the central portion corresponds to where two members between which the wiring pattern 53 is placed are bonded. Therefore, it is considered that the stress is concentrated on a mechanically weak portion, and therefore, cracks are likely to occur in the boundary portion.

Further, as a cause of stress concentration, although the thermal expansion coefficient of alumina, which is the main material of the feedthrough 50, is about 7.2 × 10^-6/° c, but the coefficient of thermal expansion of kovar of the metal frame 20 surrounding the feedthrough 50 is about 4.8 x 10^-6/° c, and the coefficient of thermal expansion of Cu of the metal base is about 16.7 × 10^-6V. C. The upper block 52 of the feedthrough 50 is fixed only to the metal frame 20, but the lower block 51 is fixed to the metal base 10 in addition to the metal frame 20. It is therefore considered that, due to the difference in stress applied to the lower block 51 and the upper block 52 caused by thermal expansion and contraction, in the boundary portion between the lower block 51 and the upper block 52, the stress concentrates on the portion close to the metal frame 20.

On the other hand, in the present embodiment, the upper block 52 of the feedthrough 50 is configured to protrude from the metal frame 20 at least into the space on the inner side of the metal frame 20 so as to allow the position of the boundary portion between the lower block 51 and the upper block 52 to be away from the metal frame 20, and a side plate made of metal and covering the entire side surface of the feedthrough 50 is provided between the metal frame 20 and the cutout 21 of the metal frame 20, thereby reducing the difference in stress applied to the lower block 51 and the upper block 52. Therefore, the generation of cracks at the boundary portion can be prevented.

[ second embodiment ]

Fig. 5 is a perspective view showing a feedthrough joined by side plates in a semiconductor device according to a second embodiment. In contrast to the first embodiment, in the second embodiment, each of the side plates 60' integrally has a reinforcing portion 61 shown by a dotted line. The reinforcement 61 is different in that it has a triangular shape that fills the step of the side plate 60 of the first embodiment. Then, although the reinforcement portion 61 is provided at least on the inner space side of the metal frame 20 of the feedthrough 50, it is also possible to provide the reinforcement portion on the outer side of the metal frame 20. Since the side plate 60' has the reinforcement portion 61, the difference in stress applied to the upper block 52 made of ceramic and the lower block 51 made of ceramic of the feedthrough 50 is further reduced by the reinforcement portion 61, so that the generation of cracks at the joint portion due to the stress can be further suppressed.

[ third embodiment ]

Fig. 6 is a perspective view showing a feedthrough joined by side plates in a semiconductor device according to a third embodiment. The third embodiment differs from the second embodiment in that the feedthrough 50 has a triangular prism-shaped reinforcement portion 54 that fills a step on the inner space side of the metal frame 20. The triangular prism-shaped reinforcing part 54 is made of ceramic like the lower block 51 and the upper block 52, and the lower block 51, the upper block 52, and the reinforcing part 54 are integrally formed. Therefore, since the boundary portion between the ceramic-made upper block and the ceramic-made lower block of the feedthrough 50 is integrally covered and reinforced by the triangular reinforcing portion 54, the influence of the stress applied to both can be further alleviated as compared with the second embodiment.