阅读说明：本技术 一种带有铜质台阶和开孔设计的铜夹键合封装结构 (A kind of copper folder bonding packaging structure designed with copper step and aperture ) 是由 刘强 刘林奇 于 2019-08-16 设计创作，主要内容包括：本发明公开了一种带有铜质台阶和开孔设计的铜夹键合封装结构,包括芯片层,所述芯片层的下端,通过焊层与分割成两部分的引线框架层相贴合,所述芯片层的上端通过焊层与设置为T型台阶结构铜夹层的下端相贴合,所述T型台阶结构铜夹层上端的一侧,连接有倾斜式铜夹段,所述倾斜式铜夹段等间距设置有通孔,所述倾斜式铜夹段的另一端,连接有通过焊层与被分割的另一部分引线框架层相贴合的水平设置的铜夹层。本发明旨在提供一种利于芯片和铜夹散热,可减少铜夹和芯片间热机械应力的铜夹键合封装结构。(The invention discloses a kind of copper designed with copper step and aperture to press from both sides bonding packaging structure, including chip layer, the lower end of the chip layer, it is fitted by layer with two-part leadframe layers are divided into, the upper end of the chip layer is fitted by layer with the lower end for being set as T stage stage structure copper interlayer, the side of the T stage stage structure copper interlayer upper end, it is connected with tilting copper folder section, the tilting copper folder section spaced set has through-hole, the other end of the tilting copper folder section, it is connected with the horizontally disposed copper interlayer to fit by layer and divided another part leadframe layers.The present invention is intended to provide a kind of be conducive to chip and copper folder heat dissipation, the copper folder bonding packaging structure of copper folder and chip chamber thermal and mechanical stress can be reduced.)

1. a kind of copper designed with copper step and aperture presss from both sides bonding packaging structure, including chip layer, it is characterised in that: described The lower end of chip layer is fitted by layer with two-part leadframe layers are divided into, and the upper end of the chip layer passes through weldering Layer fits with the lower end for being set as T stage stage structure copper interlayer, the side of the T stage stage structure copper interlayer upper end, connection There is tilting copper to press from both sides section, the tilting copper folder section spaced set has through-hole, the other end of the tilting copper folder section, connection There is the horizontally disposed copper interlayer to fit by layer and divided another part leadframe layers.

2. a kind of copper designed with copper step and aperture according to claim 1 presss from both sides bonding packaging structure, feature Be: the area of the T stage stage structure copper interlayer bottom is less than the area of chip layer upper surface.

3. a kind of copper designed with copper step and aperture according to claim 1 presss from both sides bonding packaging structure, feature Be: the through-hole is at least 3.

4. a kind of copper designed with copper step and aperture according to claim 3 presss from both sides bonding packaging structure, feature It is: the rounded rectangle in the section of the through-hole.

5. a kind of copper designed with copper step and aperture according to claim 1 presss from both sides bonding packaging structure, feature Be: the leadframe layers, chip layer and copper folder are covered by plastic packaging layer.

Technical field

It a kind of designs the present invention relates to semi-conductor discrete device technical field more particularly to copper step and aperture Copper presss from both sides bonding packaging structure.

Background technique

The copper folder bonding packaging that existing power semi-conductor discrete device uses only uses copper folder bonding substitution line bonding to connect Connect chip and lead frame.Copper folder entire body does not have redundant structure, is the laminated structure of consistency of thickness.Change as bonded portion and connects It is continuous, smooth in appearance.

The copper folder bonding packaging that existing power semi-conductor discrete device uses still faces following two significant challenge.It is first First, very high temperature gradient variation is born under power device operating condition.Under temperature gradient, the copper product of copper folder and the silicon of chip The thermal expansion coefficient mismatch of material will lead to high thermal and mechanical stress.The bonded portion of copper folder and chip carries device and is electrically connected The vital task connect, the stress in the region result even in component failure when concentrating serious, seriously affect the reliable operation of device Property.Secondly, height can be generated in packaging between the material of different layers in production, assembly, the heating and cooling procedure that use Interfacial stress.The problem of between copper folder and plastic packaging layer, is particularly evident, if interfacial stress is sufficiently high between copper folder and plastic packaging layer, The integrality of bonding interface can be jeopardized.Delamination caused by high interfacial stress can reduce the performance for even damaging system completely.

Summary of the invention

It is an object of the invention to overcome the deficiencies in the prior art described above, it is desirable to provide one kind is conducive to chip and copper folder dissipates Heat can reduce the copper folder bonding packaging structure of copper folder and chip chamber thermal and mechanical stress.

In order to achieve the above objectives, the technical scheme of the present invention is realized as follows:

A kind of copper folder bonding packaging structure designed with copper step and aperture, including chip layer, the chip layer Lower end is fitted by layer with two-part leadframe layers are divided into, and the upper end of the chip layer passes through layer and setting Lower end for T stage stage structure copper interlayer fits, and the side of the T stage stage structure copper interlayer upper end is connected with tilting Copper presss from both sides section, and the tilting copper folder section spaced set has through-hole, and the other end of the tilting copper folder section is connected with and passes through weldering The horizontally disposed copper interlayer that layer fits with divided another part leadframe layers.

Further, the area of the T stage stage structure copper interlayer bottom is less than the area of chip layer upper surface.

Further, the through-hole is at least 3.

Further, the rounded rectangle in the section of the through-hole.

Further, the leadframe layers, chip layer and copper folder are covered by plastic packaging layer.

Compared with the existing technology, the invention has the following advantages:

The present invention has redesigned copper folder bonded portion.Copper folder and the join domain of chip layer are T stage stage structure copper folder Layer, T stage stage structure copper interlayer can reduce copper and press from both sides the area connected with chip layer, while retain biggish heat dissipation area.Copper folder The smaller join domain between chip layer, reduces the thermal and mechanical stress of bonded portion, avoids stress in the mistake of chip edge Degree is concentrated, and stress point is allowed to move on to the place being connected on the inside of chip with step from chip edge, avoids chip edge from bearing excessive Thermal and mechanical stress.Tilting copper folder section between two parts leadframe layers is opened up there are three through-hole.When device plastic packaging, Plastic packaging material on copper folder fills up plastic packaging material by flow therethrough.The plastic packaging material and through-hole of hardening form engaged knot Structure, the interlocking effect of enhancing increase bond strength and avoid being layered.

Detailed description of the invention

Fig. 1 is the structural diagram of the present invention；

Fig. 2 is the overlooking structure diagram of copper folder in the present invention；

Fig. 3 is the present invention looks up structural representation of copper folder in the present invention.

Description of symbols:

1- plastic packaging layer, 2 bronze medals folder, 3 through-holes, 4 chip layers, 5 layers, 6 leadframe layers, 21-T type step structure copper interlayer, 22- tilting copper presss from both sides section.

Specific embodiment

The present invention will be described in detail below with reference to the accompanying drawings and embodiments.

As shown in Figure 1 to Figure 3, a kind of copper designed with copper step and aperture presss from both sides bonding packaging structure, including chip Layer 4, the lower end of the chip layer 4 is fitted by layer 5 with two-part leadframe layers 6 are divided into, the chip layer 4 Upper end fitted with the lower end for being set as T stage stage structure copper interlayer 21 by layer 5, the T stage stage structure copper interlayer The side of 21 upper ends is connected with tilting copper folder section 22, and tilting copper folder 22 spaced set of section has through-hole 3, described to incline Inclined copper presss from both sides the other end of section 22, is connected with the level to fit by layer 5 and divided another part leadframe layers 6 The copper interlayer of setting；The area of 21 bottom of T stage stage structure copper interlayer is less than the area of 4 upper surface of chip layer；It is described logical Hole 3 is at least 3, the rounded rectangle in section of the through-hole 3；The leadframe layers 6, chip layer 4 and copper folder 2 are by plastic packaging Layer covering.

The invention belongs to power discrete device encapsulation structures, are dispersed with leadframe layers 6, chip layer 4, copper folder from top to bottom 2 and plastic packaging layer 1, wherein leadframe layers 6 are divided into two parts in left and right, and the chip layer 4 is fixed on drawing for the right by layer 5 On wire frame 6,4 upper layer of chip layer passes through 2 connection of layer 5 and copper folder, and copper folder 2 passes through layer 5 for chip layer 4 as bonding structure Signal is drawn out on the leadframe layers 6 on the left side, and 1 covering device of plastic packaging layer forms protection.Copper folder 2 is an integral structure, copper folder 2 It is T stage stage structure copper interlayer 21 in the side being bonded with chip layer 4, the base area of T stage stage structure copper interlayer 21 is less than The surface area of chip layer 4 can allow stress point to move on to 4 inside of chip layer and 21 phase of T stage stage structure copper interlayer from 4 edge of chip layer Place even, avoids chip edge from bearing excessive thermal and mechanical stress.It is logical there are three being opened up in the tilting copper folder section 22 of copper folder 2 Hole 3, through-hole 3 can allow plastic packaging material to flow by through-hole 3, after the plastic packaging material hardening filled up, be formed with through-hole engaged Structure.

The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all in essence of the invention Within mind and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.