阅读说明：本技术 导电模块的封装结构 (Packaging structure of conductive module ) 是由 蔡苗 贠明辉 郑建娜 高永杰 杨道国 位松 于 2021-08-03 设计创作，主要内容包括：本发明提供了一种导电模块的封装结构,导电模块的封装结构包括：导电模块的封装结构包括：基板,具有上表面和与上表面相对设置的下表面,基板还包括侧面；模块电路,设置在上表面上；下表面焊盘组件,设置在下表面上；侧面导电层,设置在侧面上,侧面导电层与模块电路和下表面焊盘组件连接,模块电路通过侧面导电层与下表面焊盘组件导通。封装结构省去了下表面设置的导电层以及相关的元器件,这样避免了DBC陶瓷基板上下表面均设置导电层以及相关的元器件所导致的导体之间存在较大的杂散电容的问题；这样使得本申请中的封装结构具有产生的杂散电容较小,能够运用于高频领域的优点。实现了降低导电模块的封装结构的杂散电感和寄生电感。(The invention provides a packaging structure of a conductive module, which comprises: the packaging structure of the conductive module comprises: a substrate having an upper surface and a lower surface disposed opposite the upper surface, the substrate further including a side surface; a module circuit disposed on the upper surface; a lower surface pad assembly disposed on the lower surface; and the side surface conducting layer is arranged on the side surface, is connected with the module circuit and the lower surface pad component, and is conducted with the lower surface pad component through the side surface conducting layer. The packaging structure omits a conducting layer and related components arranged on the lower surface, so that the problem of large stray capacitance between conductors caused by the fact that the conducting layer and the related components are arranged on the upper surface and the lower surface of the DBC ceramic substrate is solved; therefore, the packaging structure has the advantages that the generated stray capacitance is small, and the packaging structure can be applied to the high-frequency field. The stray inductance and the parasitic inductance of the packaging structure of the conductive module are reduced.)

1. An encapsulation structure of a conductive module, comprising:

the substrate is provided with an upper surface and a lower surface opposite to the upper surface, and further comprises a side surface which is connected with the upper surface and the lower surface and is positioned between the upper surface and the lower surface;

a module circuit disposed on the upper surface;

a lower surface pad assembly disposed on the lower surface;

and the side surface conducting layer is arranged on the side surface, the side surface conducting layer is connected with the module circuit and the lower surface pad component, and the module circuit is conducted with the lower surface pad component through the side surface conducting layer.

2. The package structure of the conductive module according to claim 1, wherein the module circuit comprises:

a chip conductive layer disposed on the upper surface of the substrate;

the chip set is arranged on the chip conducting layer, and the bottom port is connected and conducted with the chip conducting layer;

the interconnection conducting layer is connected and conducted with the chip conducting layer and the side conducting layer;

and the upper surface welding disc assembly is communicated with the top port, and the upper surface welding disc assembly and the chip conducting layer are arranged at intervals.

3. The package structure of the conductive module of claim 2, wherein the chipset comprises a power semiconductor chip and a diode chip connected in parallel with the power semiconductor chip, and the bottom port comprises a first bottom port and a second bottom port, the first bottom port being disposed at a bottom of the power semiconductor chip and the second bottom port being disposed at a bottom of the diode chip.

4. The package structure of the conductive module of claim 3, wherein the top port comprises a first top port disposed at a top end of the power semiconductor chip and a second top port disposed at a top end of the diode chip.

5. The conductive module packaging structure of claim 4, wherein the first top port further comprises a first top control port and a first top interaction port.

6. The packaging structure of the conductive module as claimed in any one of claims 2 to 5, wherein the module circuit further comprises a bonding wire disposed on the upper surface of the substrate, and a top port of the module circuit is connected to the upper surface pad assembly through the bonding wire.

7. The package structure of the conductive module according to any one of claims 1 to 5, wherein the lower surface pad assembly includes a first lower surface pad and a second lower surface pad, the first lower surface pad being in conductive communication with the interconnection conductive layer of the module circuit, the second lower surface pad being in conductive communication with the upper surface pad assembly.

8. The package structure of the conductive module of any one of claims 2 to 5, wherein the upper surface pad assembly comprises a first upper surface pad and a second upper surface pad, the first upper surface pad in communication with the first top interaction port of the module circuitry and the second top port of the module circuitry, the second upper surface pad in communication with the first top control port of the module circuitry.

9. The package structure of the conductive module as claimed in any one of claims 1 to 5, wherein the package structure of the conductive module comprises two module circuits, the two module circuits are spaced apart from each other in a length direction of the substrate, and the first upper surface pad of one module circuit is electrically connected to the chip conductive layer of the other module circuit.

10. The package structure of the conductive module as claimed in any one of claims 1 to 5, wherein the substrate is made of a thermally conductive and insulating material, and/or the side conductive layer is made of a metallic or non-metallic conductive material.

Technical Field

The invention relates to the technical field of packaging of conductive modules, in particular to a packaging structure of a conductive module.

Background

At present, a power semiconductor device is the core of power electronic technology and is widely applied to electric automobiles, power electronic devices, photovoltaic inverters, microwaves and switching power supplies. With the increasing requirements for switching frequency, power density, etc., power semiconductor devices are gradually developing towards the characteristics of high switching frequency, miniaturization, high integration and high power density, and especially a high-power module consisting of a plurality of insulated gate bipolar transistors and FWD diodes is the main trend of the industry. Stray parameters are generated among the internal structures of the modules, and the existence of the stray parameters can affect the safe operation of the control circuit of the power module and the control circuit of other electric equipment.

In the related art, a conductive module packaging structure of a DBC ceramic substrate is adopted, the DBC ceramic substrate is of a copper layer structure which is parallel up and down, and a large stray capacitance exists between conductors inevitably, so that a high stray parameter is generated. In addition, in order to realize interconnection between the DBC ceramic substrate and an external circuit, an external terminal and a busbar need to be arranged on an upper copper layer of the substrate, and stray inductance effects of the external terminal and the busbar are particularly obvious. Therefore, the application of the DBC ceramic substrate in the high-frequency field is restricted by the high stray parameter.

Disclosure of Invention

The present invention is directed to solving at least one of the problems of the prior art or the related art.

Therefore, an object of the present invention is to provide a package structure of a conductive module.

In order to achieve the above object, an embodiment of the present invention provides a package structure of a conductive module, including: the substrate is provided with an upper surface and a lower surface opposite to the upper surface, and also comprises a side surface which is connected with the upper surface and the lower surface and is positioned between the upper surface and the lower surface; a module circuit disposed on the upper surface; a lower surface pad assembly disposed on the lower surface; and the side surface conducting layer is arranged on the side surface, is connected with the module circuit and the lower surface pad component, and is conducted with the lower surface pad component through the side surface conducting layer.

In the technical scheme, the side conductive layer is connected with the module circuit and the lower surface pad component, the module circuit is conducted with the lower surface pad component through the side conductive layer, and the side conductive layer is arranged on the side surface of the substrate. Therefore, the module circuit arranged on the upper surface and the lower surface welding disc assembly arranged on the lower surface are vertically interconnected through the side surface conductive layer, so that all components in the conductive module can be connected and conducted according to design requirements, and the conductive module can work normally. The lower surface pad assembly replaces an external terminal and a busbar terminal in the related art, and can play a role in welding and fixing and circuit interconnection with a power supply end. Compared with the conductive module packaging structure adopting the DBC ceramic substrate in the related art, the packaging structure in the application omits a conductive layer and related components arranged on the lower surface, so that the problem that a large stray capacitance exists between conductors caused by the conductive layer and the related components arranged on the upper surface and the lower surface of the DBC ceramic substrate is solved, the stray capacitance and the stray inductance generated by the packaging structure in the application are small, and the packaging structure can be applied to the advantage in the high-frequency field.

Simultaneously, according to the interconnection needs, set up the side conducting layer in the base plate side, made the base plate upper and lower surface realize electrically conductive interconnection, set up lower surface bonding pad subassembly and replaced external terminal and female terminal of arranging, make packaging structure in this application have less stray inductance like this, low stray capacitance and stray inductance make this packaging structure have can apply to the advantage in the high frequency field.

In addition, the package structure of the conductive module in the above embodiment of the present invention may further have the following additional technical features:

in the above technical solution, the module circuit includes: a chip conductive layer disposed on an upper surface of the substrate; the chip set is provided with a top port and a bottom port, the chip set is arranged on the chip conducting layer, and the bottom port is connected and conducted with the chip conducting layer; the interconnection conducting layer is connected and conducted with the chip conducting layer and the side conducting layer; and the upper surface welding disc assembly is communicated with the top port, and the upper surface welding disc assembly and the chip conducting layer are arranged at intervals.

In the technical scheme, a conduction path is formed among the chip conducting layer, the chip group, the interconnection conducting layer and the upper surface welding disc component, so that an external electric signal can be processed in the input chip group, and the processed electric signal is output through the conduction path, thereby ensuring that the chip group can normally work, and further meeting the functional requirement of the packaging structure.

In any of the above technical solutions, the chipset includes a power semiconductor chip and a diode chip connected in parallel with the power semiconductor chip, the bottom port includes a first bottom port and a second bottom port, the first bottom port is disposed at the bottom of the power semiconductor chip, and the second bottom port is disposed at the bottom of the diode chip.

In the technical scheme, the bottom ports of the power semiconductor chip and the diode chip, namely the first bottom port and the second bottom port, are connected and conducted through the chip conducting layer, so that the bottom ports of the power semiconductor chip and the diode chip can be conducted with the lower surface bonding pad assembly through the side conducting layer, and external electric signals can be input into a chip set for processing, so that the functional requirements of the packaging structure are met.

In any of the above solutions, the top port includes a first top port and a second top port, the first top port is disposed on the top end of the power semiconductor chip, and the second top port is disposed on the top end of the diode chip.

In the technical scheme, the electrical signal processed by the diode chip can be output by arranging the second top port, the external control electrical signal can be input by arranging the first top port, and the electrical signal processed by the power semiconductor chip is output, so that the chip set can normally work, and the functional requirement of the packaging structure is met.

In any of the above solutions, the first top port further includes a first top control port and a first top interaction port.

In the technical scheme, the first top control port is arranged to input an external control electric signal, and the first top interaction port is arranged to output an electric signal processed by the power semiconductor chip, so that the chip set can normally work, and the functional requirement of the packaging structure is met.

In any of the above technical solutions, the module circuit further includes a bonding wire, the bonding wire is disposed on the upper surface of the substrate, and a top port of the module circuit is connected and conducted with the upper surface pad assembly through the bonding wire.

In the technical scheme, the bonding wire has a connection conduction function, so that the top port of the module circuit can be connected and conducted with the upper surface pad component, the side surface conducting layer is convenient to conduct the chip group and the lower surface pad component, the chip group can normally work, and the functional requirement of the packaging structure is further met.

In any of the above technical solutions, the lower surface pad assembly includes a first lower surface pad and a second lower surface pad, the first lower surface pad is conducted with the interconnection conductive layer of the module circuit, and the second lower surface pad is conducted with the upper surface pad assembly.

In the technical scheme, the first lower surface bonding pad is used as an external electric signal input end and used for inputting an external electric signal, so that the external electric signal can be input into the chip set for processing. The second lower surface bonding pad that switches on with first upper surface bonding pad is as signal of telecommunication output for signal of telecommunication output after will handling through the chipset, and the second lower surface bonding pad that switches on with second upper surface bonding pad is as the input of external control signal of telecommunication, is used for external control signal of telecommunication input, ensures like this that the external control signal of telecommunication can be input the chipset. Therefore, the normal work of the chip group can be ensured, and the functional requirement of the packaging structure can be further met.

In any of the above technical solutions, the upper surface pad assembly includes a first upper surface pad and a second upper surface pad, the first upper surface pad is conducted with the first top interaction port of the module circuit and the second top port of the module circuit, and the second upper surface pad is conducted with the first top control port of the module circuit.

In this technical scheme, first upper surface pad can be with the signal of telecommunication input side conducting layer after the chipset processing, ensures like this that above-mentioned signal of telecommunication can input lower surface pad subassembly to make things convenient for the output of above-mentioned signal of telecommunication, and then satisfy packaging structure's functional requirement.

In any of the above technical solutions, the package structure of the conductive module includes two module circuits, the two module circuits are disposed at an interval in a length direction of the substrate, and the first upper surface pad of one module circuit is connected and conducted with the chip conductive layer of the other module circuit.

In the technical scheme, the processing function of the external electric signals is realized through the two groups of chip sets, so that the processing capacity of the packaging structure is stronger, and the functional requirement of the packaging structure can be met.

In any of the above technical solutions, the substrate is made of a heat conducting and insulating material, and/or the side surface conducting layer is made of a metal or non-metal conducting material.

In the technical scheme, the substrate is made of the heat-conducting insulating material, so that the substrate can meet the requirement of high heat dissipation of the high-power module, the packaging structure can be suitable for packaging the high-power module, and the application range of the packaging structure is enlarged.

Additional aspects and advantages of the invention will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention.

Drawings

The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

fig. 1 is a schematic perspective view illustrating a package structure of a conductive module according to a first embodiment of the present invention;

fig. 2 is a perspective view of another angle of the package structure of the conductive module in fig. 1;

fig. 3 is a schematic perspective view illustrating a package structure of a conductive module according to a second embodiment of the present invention;

fig. 4 is a schematic perspective view of the package structure (with an insulating layer) of the conductive module in fig. 3;

fig. 5 is a schematic structural diagram illustrating a usage scenario of a package structure of a conductive module according to an embodiment of the present invention;

fig. 6 shows a flowchart of a method for manufacturing a package structure according to an embodiment of the invention.

Wherein, the correspondence between the reference numbers and the part names in fig. 1 to 5 is:

10. a substrate; 12. an upper surface; 14. a lower surface; 16. a side surface; 20. a module circuit; 21. a bonding wire; 22. a chip conductive layer; 24. a chipset; 242. a top port; 2422. a first top port; 2424. a second top port; 2428. a first top control port; 2429. a first top interaction port; 244. a bottom port; 2442. a first bottom port; 2444. a second bottom port; 246. a power semiconductor chip; 248. a diode chip; 26. an interconnect conductive layer; 28. an upper surface pad assembly; 282. a first upper surface pad; 284. a second upper surface pad; 30. a lower surface pad assembly; 32. a first lower surface pad; 34. a second lower surface pad; 40. a side conductive layer; 50. insulating layer, 60, circuit board, 70, I/O interface, 80, control system.

Detailed Description

In order that the above objects, features and advantages of the present invention can be more clearly understood, a more particular description of the invention will be rendered by reference to the appended drawings. It should be noted that the embodiments and features of the embodiments of the present application may be combined with each other without conflict.

In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present invention, however, the present invention may be practiced in other ways than those specifically described herein, and therefore the scope of the present invention is not limited by the specific embodiments disclosed below.

In the present application, a DBC (Direct Bonding coater) ceramic substrate refers to a Copper-clad ceramic substrate. An IGBT (Insulated Gate Bipolar Transistor) chip is referred to as an Insulated Gate Bipolar Transistor chip, an FWD (free-wheeling diode) diode is referred to as a Freewheeling diode, and an MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor) is referred to as a Metal-Oxide-Semiconductor Field-Effect Transistor.

A package structure of a conductive module and a method of manufacturing the package structure according to some embodiments of the present invention are described below with reference to fig. 1 to 6.

As shown in fig. 1 to 4, the present invention and the embodiments of the present invention provide a package structure of a conductive module, which includes a substrate 10, a module circuit 20, a lower surface pad assembly 30, and a side conductive layer 40. Wherein the substrate 10 has an upper surface 12 and a lower surface 14 disposed opposite the upper surface 12, the substrate 10 further includes a side surface 16, and the side surface 16 is connected to the upper surface 12 and the lower surface 14 and is located between the upper surface 12 and the lower surface 14. Module circuitry 20 is disposed on upper surface 12 and lower surface pad assembly 30 is disposed on lower surface 14. Side conductive layer 40 is disposed on side 16, side conductive layer 40 is connected to module circuitry 20 and lower surface pad assembly 30, and module circuitry 20 is in electrical communication with lower surface pad assembly 30 through side conductive layer 40.

In the above arrangement, since the side conductive layer 40 is connected to the module circuit 20 and the lower surface pad assembly 30, the module circuit 20 is electrically connected to the lower surface pad assembly 30 through the side conductive layer 40, and the side conductive layer 40 is further disposed on the side surface 16 of the substrate 10. The side conductive layer 40 thus provides a vertical interconnection between the module circuit 20 disposed on the upper surface 12 and the lower surface pad assembly 30 disposed on the lower surface 14, thereby ensuring that the components of the conductive module are electrically connected according to design requirements, and thus ensuring that the conductive module can operate normally. The lower surface pad assembly replaces an external terminal and a busbar terminal in the related art, and can play a role in welding and fixing and circuit interconnection with a power supply end. Compared with a conductive module packaging structure adopting a DBC ceramic substrate in the related art, the packaging structure in the application omits a conductive layer and related components arranged on the lower surface 14, so that the problem that a large stray capacitance exists between conductors caused by the conductive layer and the related components arranged on the upper surface and the lower surface of the DBC ceramic substrate is solved, a copper layer structure is arranged on the side face of the substrate 10, the interconnection of the substrate 10 and an external circuit is solved, an external terminal and a busbar terminal are replaced by a bottom pad structure, and the packaging stray inductance is obviously reduced. Like this, above-mentioned improvement makes the stray capacitance and the stray inductance that packaging structure in this application produced less, has the advantage that can apply to the high frequency field.

Meanwhile, according to the interconnection requirement, the side surface conducting layer 40 is arranged on the side surface of the substrate 10, so that the upper surface and the lower surface of the substrate 10 are electrically interconnected, and the lower surface welding disc assembly 30 is arranged to replace an external terminal and a busbar terminal, so that the packaging structure in the application has smaller stray inductance, and the low stray capacitance and stray inductance enable the packaging structure to have the advantage of being applied to the high-frequency field.

In addition, the side conductive layer 40 in the present application is disposed on the side surface 16 of the substrate 10, and there is no need to drill a hole on the organic substrate, unlike the conductive module package structure using the organic substrate in the related art, and a copper pillar sputtering process is employed on the hole wall of the drilled hole, so that a conductive layer for conducting the module circuit 20 and the lower surface pad assembly 30 is formed on the hole wall of the drilled hole, which avoids the problem of damaging the substrate structure due to drilling processing, and also avoids the problems of high manufacturing cost, high difficulty and low manufacturing yield of the substrate 10 due to the copper pillar sputtering process. Therefore, the substrate 10 in the present application is relatively easy to process and manufacture, the manufacturing yield of the substrate 10 is improved, and the manufacturing cost of the package structure is saved.

Moreover, the conductive module package structure using the organic substrate in the related art is not suitable for high power module package, i.e., the organic substrate is composed of organic resin, and the circuit is embedded in the organic resin and mainly depends on the organic resin for heat transfer. Compared with a ceramic substrate, the organic resin has extremely low thermal conductivity and high power density of the high-power module, so that the generated heat loss is very high, and the organic substrate cannot meet the requirement of high heat dissipation of the high-power module. The voltage and current conducted by the high-power module are high, and the vertical interconnection through hole of the organic substrate, namely the drilling hole, is easy to damage due to the fact that the vertical interconnection through hole cannot bear the impact of the high voltage and current. Because the side conducting layer 40 in this application is disposed on the side surface 16, the current of the high-power module can be conducted well, and the substrate 10 in this application is made of a heat-conducting insulating material, so that the packaging structure in this application can be applied to packaging of the high-power module, and the application range of the packaging structure is enlarged.

Specifically, in the embodiment of the present invention, the substrate 10 is a high thermal conductivity insulating support layer made of silicon, diamond, or Al₂0₃Ceramics, aluminum nitride ceramics and the like.

In the above arrangement, the substrate 10 is an insulating support layer with high thermal conductivity, which can meet the requirement of high heat dissipation of the high-power module, so as to ensure that the package structure can be applied to package of the high-power module, thereby increasing the application range of the package structure.

Example one

Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, module circuit 20 includes chip conductive layer 22, chipset 24, interconnection conductive layer 26, and upper surface pad assembly 28. Wherein a chip conductive layer 22 is provided on the upper surface 12 of the substrate 10. Chipset 24 has a top port 242 and a bottom port 244, chipset 24 is disposed on chip conductive layer 22, and bottom port 244 is in conductive communication with chip conductive layer 22. The interconnection conductive layer 26 is electrically connected to the chip conductive layer 22 and the side conductive layer 40. Upper surface pad assembly 28 is in conductive communication with top port 242, and upper surface pad assembly 28 is spaced apart from chip conductive layer 22.

In the above arrangement, a conduction path is formed between the chip conductive layer 22, the chipset 24, the interconnection conductive layer 26 and the upper surface pad assembly 28, so that an external electrical signal can be processed by the input chipset 24, and the processed electrical signal is output through the conduction path, thereby ensuring that the chipset 24 can normally operate, and further meeting the functional requirements of the package structure.

Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the chipset 24 includes a power semiconductor chip 246 and a diode chip 248 connected in parallel with the power semiconductor chip 246, the bottom port 244 includes a first bottom port 2442 and a second bottom port 2444, the first bottom port 2442 is disposed at the bottom of the power semiconductor chip 246, and the second bottom port 2444 is disposed at the bottom of the diode chip 248.

In the above arrangement, the bottom ports of the power semiconductor chip 246 and the diode chip 248, i.e., the first bottom port 2442 and the second bottom port 2444, are connected and conducted through the chip conductive layer 22, so that the side conductive layer 40 can conduct the bottom ports of the power semiconductor chip 246 and the diode chip 248 with the lower surface pad assembly 30, and thus ensure that external electrical signals can be input into the chipset 24 for processing, thereby meeting the functional requirements of the package structure.

Specifically, the power semiconductor chip includes an IGBT, a MOSFET, or a thyristor.

Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the top port 242 includes a first top port 2422 and a second top port 2424, the first top port 2422 is disposed at the top end of the power semiconductor chip 246, and the second top port 2424 is disposed at the top end of the diode chip 248.

In the above arrangement, the electrical signal processed by the diode chip 248 can be output through the second top port 2424, the external control electrical signal can be input through the first top port 2422, and the electrical signal processed by the power semiconductor chip 246 can be output, so that the chipset 24 can normally operate, and the functional requirements of the package structure can be met.

Specifically, as shown in fig. 1 and 2, in a first embodiment of the invention, the first top port 2422 further comprises a first top control port 2428 and a first top interaction port 2429.

In particular, the number of power semiconductor chips may also be two, four or six, or also more. For illustrative purposes, the number of power semiconductor chips may be four and divided into two groups, each group including two power semiconductor chips.

In the above arrangement, the first top control port 2428 can be used for inputting external control electrical signals, and the first top interaction port 2429 can be used for outputting electrical signals processed by the power semiconductor chip 246, so that the chipset 24 can normally work, and the functional requirements of the package structure can be met.

Specifically, as shown in fig. 1 and fig. 2, in the first embodiment of the present invention, the module circuit 20 further includes a bonding wire 21, the bonding wire 21 is disposed on the upper surface 12 of the substrate 10, and the top port 242 of the module circuit 20 is electrically connected to the upper surface pad assembly 28 through the bonding wire 21.

In the above arrangement, the bonding wire 21 has a connection and conduction function, and can connect and conduct the top port 242 of the module circuit 20 with the upper surface pad assembly 28, so that the side conductive layer 40 can conduct the chipset 24 with the lower surface pad assembly 30 conveniently, and the chipset 24 can work normally, thereby meeting the functional requirement of the package structure.

Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the upper surface pad assembly 28 includes a first upper surface pad 282 and a second upper surface pad 284, the first upper surface pad 282 is in communication with a first top cross port 2429 of the module circuit 20 and a second top port 2424 of the module circuit 20, and the second upper surface pad 284 is in communication with a first top control port 2428 of the module circuit 20.

In the above arrangement, the first upper surface pads 282 can input the electrical signals processed by the chipset 24 into the side conductive layers 40, so as to ensure that the electrical signals can be input into the lower surface pad assembly 30, thereby facilitating the output of the electrical signals and further satisfying the functional requirements of the package structure.

Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the lower surface pad assembly 30 includes a first lower surface pad 32 and a second lower surface pad 34, the first lower surface pad 32 is in electrical communication with the interconnection conductive layer 26 of the module circuit 20, and the second lower surface pad 34 is in electrical communication with the upper surface pad assembly 28.

In the above arrangement, the first lower surface pads 32 are used as external electrical signal input terminals for inputting external electrical signals, so as to ensure that the external electrical signals can be input to the chipset 24 for processing. The second lower surface pad 34, which is in communication with the first upper surface pad 282, serves as an electrical signal output terminal for outputting an electrical signal processed by the chipset 24, and the second lower surface pad 34, which is in communication with the second upper surface pad 284, serves as an input terminal for an external control electrical signal, which ensures that the external control electrical signal can be input to the chipset 24. Thereby ensuring that the chipset 24 can operate properly and thus meet the functional requirements of the package structure.

Specifically, as shown in fig. 1 and 2, in the first embodiment of the present invention, the side conductive layer 40 is made of a metal conductive material. More specifically, the side conductive layer 40 is made of copper. Certainly, the side conductive layer 40 may be made of other conductive materials such as silver or non-metallic conductive materials such as graphene according to actual conditions.

It should be noted that lower surface pad assembly 30, upper surface pad assembly 28, side conductive layer 40, chip conductive layer 22, and interconnect conductive layer 26 in the present application are made of copper, and the above-mentioned pad assembly and conductive layers are formed by providing a copper layer on substrate 10 and processing the copper layer by machining or by photolithography or laser cutting. The substrate 10 in the present application can form metal pins on the lower surface 14 of the substrate 10 by direct copper-clad or copper-deposition technology, which satisfies the application of high-power semiconductor module mounting.

As shown in fig. 4, in the above arrangement, the package structure of the conductive module further includes an insulating layer 50, and the insulating layer 50 covers the substrate 10 and the module circuit 20.

Specifically, the insulating layer 50 entirely covers the substrate 10 and the module circuit 20, and for convenience of describing the structure, the package structure shown in fig. 4 is only partially covered by the insulating layer 50.

The insulating layer 50 includes an EMC (Epoxy Molding Compound) Molding or potting Compound.

As shown in fig. 5, the package structure of the conductive module provided by the present invention can be disposed on a circuit board 60, the circuit board 60 is further disposed with a control system 80 and an I/O port 70, the control system 80 is used for controlling the conductive module, and the I/O (Input/output) port 70 is interconnected with an external power supply.

Example two

As shown in fig. 3 and 4, in the second embodiment of the present invention, the package structure of the conductive module includes two module circuits 20, the two module circuits 20 are disposed at an interval in the length direction of the substrate 10, and the first upper surface pad 282 of one module circuit 20 is electrically connected to the chip conductive layer 22 of the other module circuit 20.

In the above arrangement, the processing function of the external electrical signal is realized by the two sets of chipsets 24, so that the processing capability of the package structure is stronger, and the functional requirement of the package structure can be met.

The other structures of the second embodiment are the same as those of the first embodiment, and are not described herein again.

It should be noted that the module circuit 20 of the present invention can flexibly arrange the soldering regions, the conductive layers and the pad assemblies on the upper and lower surfaces of the substrate 10 according to the number and size of the high power semiconductor chips and the FWD diodes.

As shown in fig. 6, the present invention further provides a manufacturing method of the package structure, which comprises the following steps:

step S10: an upper copper layer is arranged on the upper surface of the high-heat-conductivity insulating support layer (the substrate 10);

step S20: forming an interconnect conductive layer, a chip conductive layer, and a bond wire pad (top surface pad assembly 28) on the upper copper layer;

step S30: arranging side copper layers (side conductive layers 40) on two sides of the high-thermal-conductivity insulating support layer;

step S40: forming conductive interconnect vias (conductive vias formed on side conductive layer 40) on the side copper layers;

step S50: arranging a lower copper layer on the lower surface of the high-thermal-conductivity insulating support layer;

step S60: a metal pad (lower surface pad assembly 30) is formed on the lower copper layer.

From the above description, it can be seen that since side conductive layer 40 is connected to module circuit 20 and lower surface pad assembly 30, module circuit 20 is electrically connected to lower surface pad assembly 30 through side conductive layer 40, and side conductive layer 40 is disposed on side 16 of substrate 10. The side conductive layer 40 thus provides a vertical interconnection between the module circuit 20 disposed on the upper surface 12 and the lower surface pad assembly 30 disposed on the lower surface 14, thereby ensuring that the components of the conductive module are electrically connected according to design requirements, and thus ensuring that the conductive module can operate normally. Compared with the conductive module packaging structure adopting the DBC ceramic substrate in the related art, the packaging structure in the application omits a conductive layer and related components arranged on the lower surface 14, so that the problem that large stray capacitance exists between conductors caused by the conductive layer and the related components arranged on the upper surface and the lower surface of the DBC ceramic substrate is avoided, the interconnection between the substrate 10 and an external circuit is solved, the stray inductance effect of an external terminal and a busbar is particularly obvious, and the problem of the application of the external terminal and the busbar in the high-frequency field is restricted, so that the stray capacitance generated by the packaging structure in the application is small, and the packaging structure can be applied to the advantage in the high-frequency field.

In addition, the side conductive layer 40 in the present application is disposed on the side surface 16 of the substrate 10, and there is no need to drill a hole on the organic substrate, unlike the conductive module package structure using the organic substrate in the related art, and a copper pillar sputtering process is employed on the hole wall of the drilled hole, so that a conductive layer for conducting the module circuit 20 and the lower surface pad assembly 30 is formed on the hole wall of the drilled hole, which avoids the problem of damaging the substrate structure due to drilling processing, and also avoids the problems of high manufacturing cost, high difficulty and low manufacturing yield of the substrate 10 due to the copper pillar sputtering process. Therefore, the substrate 10 in the present application is relatively easy to process and manufacture, the manufacturing yield of the substrate 10 is improved, and the manufacturing cost of the package structure is saved.

Moreover, the conductive module package structure using the organic substrate in the related art is not suitable for high power module package, i.e., the organic substrate is composed of organic resin, and the circuit is embedded in the organic resin and mainly depends on the organic resin for heat transfer. Compared with a ceramic substrate, the organic resin has extremely low thermal conductivity and high power density of the high-power module, so that the generated heat loss is very high, and the organic substrate cannot meet the requirement of high heat dissipation of the high-power module. The voltage and current conducted by the high-power module are high, and the vertical interconnection through hole of the organic substrate, namely the drilling hole, is easy to damage due to the fact that the vertical interconnection through hole cannot bear the impact of the high voltage and current. Because the side conducting layer 40 in this application is disposed on the side surface 16, the current of the high-power module can be conducted well, and the substrate 10 in this application is made of a heat-conducting insulating material, so that the packaging structure in this application can be applied to packaging of the high-power module, and the application range of the packaging structure is enlarged.

In the present invention, the terms "first", "second", and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance; the term "plurality" means two or more unless expressly limited otherwise. The terms "mounted," "connected," "fixed," and the like are to be construed broadly, and for example, "connected" may be a fixed connection, a removable connection, or an integral connection; "coupled" may be direct or indirect through an intermediary. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.

In the description of the present invention, it is to be understood that the terms "upper", "lower", "left", "right", "front", "rear", and the like indicate orientations or positional relationships based on those shown in the drawings, and are only for convenience of description and simplification of description, but do not indicate or imply that the referred device or unit must have a specific direction, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention.

In the description herein, the description of the terms "one embodiment," "some embodiments," "specific embodiments," etc., means that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

The above is only a preferred embodiment of the present invention, and is not intended to limit the present invention, and various modifications and changes will occur to those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.