阅读说明：本技术 功率半导体装置 (Power semiconductor device ) 是由 石桥秀俊 木村义孝 江草稔 浅地伸洋 勅使河原一成 于 2020-10-23 设计创作，主要内容包括：功率半导体装置(100)具有：功率半导体元件(10)；控制电路(50),其对功率半导体元件(10)进行控制；控制基板(51),其安装有控制电路(50)；盖(60),其以在第1方向(A)上与控制基板(51)的至少一部分重叠的方式配置；以及至少一个外部连接端子(70),其具有与控制基板(51)连接的第1部分(71)、与外部设备连接的第2部分(72)、以及位于第1部分(71)与第2部分(72)之间且与盖(60)固定的第3部分(73),第1部分(71)构成为压配合部。(A power semiconductor device (100) comprises: a power semiconductor element (10); a control circuit (50) that controls the power semiconductor element (10); a control substrate (51) on which a control circuit (50) is mounted; a cover (60) that is disposed so as to overlap at least a portion of the control board (51) in the 1 st direction (A); and at least one external connection terminal (70) having a 1 st portion (71) connected to the control substrate (51), a 2 nd portion (72) connected to an external device, and a 3 rd portion (73) located between the 1 st portion (71) and the 2 nd portion (72) and fixed to the cover (60), the 1 st portion (71) constituting a press-fit portion.)

1. A power semiconductor device, comprising:

a power semiconductor element;

a control circuit that controls the power semiconductor element;

a control substrate on which the control circuit is mounted;

a cover disposed to overlap at least a part of the control substrate in a 1 st direction; and

at least one external connection terminal having a 1 st portion connected to the control substrate, a 2 nd portion connected to an external device, and a 3 rd portion located between the 1 st portion and the 2 nd portion and fixed to the cover, the 1 st portion being configured as a press-fit portion.

2. The power semiconductor device of claim 1,

the 1 st part and the 3 rd part of the at least one external connection terminal are arranged side by side in the 1 st direction,

the at least one external connection terminal further has a 4 th part between the 1 st part and the 3 rd part,

the rigidity of the 4 th part is lower than that of the 3 rd part.

3. The power semiconductor device of claim 2,

in a cross section perpendicular to the 1 st direction, a minimum value of the cross-sectional area of the 4 th portion is smaller than a minimum value of the cross-sectional area of the 3 rd portion.

4. The power semiconductor device according to any one of claims 1 to 3,

the at least one external connection terminal includes a plurality of external connection terminals,

the plurality of external connection terminals are arranged side by side in a 2 nd direction intersecting the 1 st direction,

the press-fit portions of the plurality of external connection terminals are arranged so as to be elastically deformed in a 3 rd direction intersecting the 1 st direction and the 2 nd direction.

5. The power semiconductor device according to any one of claims 1 to 4, further having:

a case disposed so as to surround the power semiconductor element, the control circuit, and the control board, the case and the cover together constituting at least a part of an outer frame of the power semiconductor device; and

an encapsulating resin encapsulating the power semiconductor element in the case,

the housing includes a wall portion that divides a region located on an opposite side of the cover with respect to the press-fit portion into a 1 st region and a 2 nd region that are arranged side by side with each other in a direction intersecting the 1 st direction,

the power semiconductor element and the encapsulating resin are disposed in the 1 st region,

the encapsulating resin is not disposed in the 2 nd region,

the tip of the press-fit portion is disposed in the 2 nd region.

6. The power semiconductor device according to any one of claims 1 to 5,

the control substrate is formed with a through hole,

the 1 st portion is fitted to the through hole.

7. The power semiconductor device according to any one of claims 1 to 6,

the cover and the 3 rd portion of the at least one external connection terminal are constructed as one part.

8. The power semiconductor device according to any one of claims 1 to 6,

the cover and the 3 rd part of the at least one external connection terminal are formed by combining separate members.

Technical Field

The present invention relates to a power semiconductor device.

Background

As a Power semiconductor device including a Power semiconductor element and a control circuit for controlling driving of the Power semiconductor element, an Intelligent Power Module (IPM) is known. The IPM further has: a housing which houses the power semiconductor element and the control circuit therein and which is composed of a case and a cover; and an external connection terminal inserted through the cover to connect the control circuit and an external device.

Japanese patent No. 6455364 discloses an IPM in which an external connection terminal and a control board are welded to each other, and a method for manufacturing the IPM, in which an integrated body of the control board and the external connection terminal welded to each other is fixed to a case, and then a cover having a through hole through which the external connection terminal is inserted is fixed to the case.

In the above method for manufacturing IPM, the number of welding steps is relatively large. In the above-described IPM manufacturing method, when the cover is fixed to the case, the cover interferes with the external connection terminal, and at least one of the external connection terminal and the cover is deformed, which may deteriorate reliability.

Disclosure of Invention

The main object of the present invention is to provide a power semiconductor device in which the number of soldering steps in the manufacturing method of the power semiconductor device is reduced as compared with the number of soldering steps in the conventional IPM manufacturing method, and which has higher reliability as compared with the conventional IPM.

The power semiconductor device according to the present invention includes: a power semiconductor element; a control circuit for controlling the power semiconductor element; a control substrate on which a control circuit is mounted; a cover disposed to overlap at least a part of the control substrate in a 1 st direction; and at least one external connection terminal having a 1 st portion connected to the control substrate, a 2 nd portion connected to the external device, and a 3 rd portion located between the 1 st and 2 nd portions and fixed to the cover, the 1 st portion being configured as a press-fit portion.

The above and other objects, features, aspects and advantages of the present invention will become apparent from the following detailed description, which is to be read in connection with the accompanying drawings.

Drawings

Fig. 1 is a cross-sectional view of a power semiconductor device according to embodiment 1.

Fig. 2 is an exploded perspective view of the power semiconductor device according to embodiment 1.

Fig. 3 is a partial sectional view of the power semiconductor device according to embodiment 1.

Fig. 4 is a sectional view showing a step of the method for manufacturing a power semiconductor device according to embodiment 1.

Fig. 5 is a cross-sectional view showing a step subsequent to the step shown in fig. 4 in the method for manufacturing a power semiconductor device according to embodiment 1.

Fig. 6 is a cross-sectional view showing a step subsequent to the step shown in fig. 5 in the method for manufacturing a power semiconductor device according to embodiment 1.

Fig. 7 is a cross-sectional oblique view of a part of the power semiconductor device according to embodiment 2.

Fig. 8 is a cross-sectional view of a power semiconductor device according to embodiment 3.

Fig. 9 is a partial sectional view of an external connection terminal and a case of a power semiconductor device according to embodiment 3.

Detailed Description

Embodiments of the present invention will be described below with reference to the drawings. In the following drawings, the same or corresponding portions are denoted by the same reference numerals, and description thereof will not be repeated.

Embodiment 1.

< Structure of Power semiconductor device >

As shown in fig. 1, a power semiconductor device 100 according to embodiment 1 mainly includes a power semiconductor element 10, an insulating substrate 11, a case 20, a sealing resin 40, a control circuit 50, a control substrate 51, a cover 60, and a plurality of external connection terminals 70. The insulating substrate 11, the control substrate 51, and the cover 60 are arranged in parallel in the 1 st direction a. Hereinafter, in the 1 st direction a, the cover 60 side with respect to the control board 51 is referred to as an upper side, and the insulating board 11 side with respect to the control board 51 is referred to as a lower side.

The power Semiconductor elements 10 are at least 1 selected from the group consisting of, for example, IGBTs (Insulated Gate Bipolar transistors), MOSFETs (Metal-Oxide-Semiconductor Field-Effect transistors), and FWDi (Free Wheeling diodes). The power semiconductor element 10 is mounted on the insulating substrate 11.

The insulating substrate 11 is configured as a laminated body of a base plate 12 and an insulating layer 13, for example. The insulating substrate 11 is, for example, a flat plate-shaped member. The insulating substrate 11 has a lower surface exposed to the outside of the power semiconductor device 100, for example, and an upper surface facing the opposite side of the lower surface. The lower surface of the insulating substrate 11 is constituted by a base plate 12. The upper surface of the insulating substrate 11 is constituted by an insulating layer 13. The insulating layer 13 has electrical insulation. The material constituting the base plate 12 includes at least either of copper (Cu) and aluminum (Al), for example. The material constituting the insulating layer 13 is, for example, a resin, preferably an epoxy resin to which a filler having high heat dissipation properties such as boron nitride is added. The insulating substrate 11 may be a ceramic substrate.

A wiring pattern 14 is bonded to the upper surface of the insulating substrate 11. The material constituting the wiring pattern 14 may be any material having conductivity, for example, a metal. The power semiconductor element 10 is bonded on the wiring pattern 14.

A sensor 15 is bonded to the wiring pattern 14. The sensor 15 measures a physical state of the power semiconductor element 10 and transmits a signal corresponding to the physical state. The physical state of the power semiconductor element 10 refers to, for example, the temperature of the power semiconductor element 10, the amount of current flowing through the power semiconductor element 10, and the like.

The method of bonding the power semiconductor element 10 and the insulating substrate 11, and the method of bonding the power semiconductor element 10 and the sensor 15 are not particularly limited, and examples thereof include soldering.

The case 20 is disposed so as to surround the power semiconductor element 10, the insulating substrate 11, the control circuit 50, and the control substrate 51. The housing 20 is, for example, an annular member. The case 20 and the cover 60 together constitute at least a part of the outer frame of the power semiconductor device 100. The case 20 is joined to the peripheral edge portion of the insulating substrate 11. The case 20 has a portion protruding upward from the peripheral edge of the insulating substrate 11 in the 1 st direction a. The upper end of the case 20 is disposed so as to surround the cover 60, for example. The case 20 has, for example, electrical insulation. The material constituting the case 20 is, for example, resin.

As shown in fig. 1, the housing 20 has, for example, a lower portion 20A and an upper portion 20B. The lower portion 20A extends in a direction intersecting the 1 st direction a further outward than the peripheral edge portion of the insulating substrate 11. The lower end of the upper portion 20B is connected to the peripheral edge of the lower portion 20A, and projects upward relative to the lower portion 20A. In other words, the sectional shape of the housing 20 is substantially L-shaped. A part of the lower portion 20A is disposed so as to overlap the control substrate 51, the cover 60, and the external connection terminals 70 in the 1 st direction a. The housing 20 does not have an Undercut (underrout) shape, for example.

A plurality of main electrode terminals 21 and a plurality of drive control terminals 22 are fixed to the case 20. In the power semiconductor device 100 shown in fig. 1, the plurality of main electrode terminals 21 are arranged in parallel with each other with a space therebetween in the 2 nd direction perpendicular to the paper surface, and the plurality of drive control terminals 22 are arranged in parallel with each other with a space therebetween in the 2 nd direction. The 2 nd direction is a direction intersecting the 1 st direction a.

The main electrode terminal 21 is a terminal through which a main current flows in the power semiconductor element 10. The main electrode terminal 21 has, for example, a portion disposed in a region surrounded by the case 20 (hereinafter, referred to as an inner region of the case 20) and a portion disposed outside the case 20. The portion of main electrode terminal 21 disposed in the inner region of case 20 is connected to power semiconductor element 10 and wiring pattern 14 via lead wire 31, and is joined to lower portion 20A of case 20. The portion of the main electrode terminal 21 disposed outside the housing 20 is joined to the upper portion 20B of the housing 20.

The plurality of drive control terminals 22 include: a drive terminal for supplying drive power for driving the power semiconductor element 10 from an external device of the power semiconductor device 100 to the power semiconductor element 10; and a control terminal for transmitting a signal corresponding to the physical state of the power semiconductor element 10 from the sensor 15 to the control circuit 50. The drive control terminals 22 are disposed entirely within the internal region of the housing 20. The driving terminal includes, for example: a portion connected to the power semiconductor element 10 via a wire 32 and joined to the lower portion 20A of the case 20; and a convex portion that protrudes upward relative to the portion. The control terminal includes, for example: a portion connected to the sensor 15 via a wire 32 and joined to the above-described lower portion 20A of the housing 20; and a convex portion that protrudes upward relative to the portion. The projecting portion of each drive control terminal 22 is inserted into a through hole 53 formed in the control board 51. The projecting portion of each drive control terminal 22 is not engaged with the upper portion 20B of the housing 20.

The material constituting the wires 31, 32 may be any material having conductivity, for example, metal.

The encapsulating resin 40 encapsulates the power semiconductor element 10, the leads 31 and 32, the connection between the lead 32 and the main electrode terminal 21, and the connection between the lead 32 and the drive control terminal 22. The sealing resin 40 is disposed only in a region on the insulating substrate 11 side (lower side) of the control substrate 51 among the internal regions of the case 20. The control board 51, the cover 60, and the external connection terminals 70 are entirely not covered with the encapsulation resin 40. The upper surface of the sealing resin 40 is disposed below the lower surface of the control board 51 and the tip of the 1 st part 71 of the external connection terminal 70. The material constituting the sealing resin 40 is a resin material such as silicone gel or epoxy resin.

The integrated body of the power semiconductor element 10, the insulating substrate 11, the wiring pattern 14, the sensor 15, the case 20, the main electrode terminal 21, the drive control terminal 22, the leads 31 and 32, and the encapsulating resin 40 is referred to as a core block 80 (see fig. 2). The core block 80 has an opening portion connected to the inner region of the housing 20 at the upper side. The cover 60 closes the opening of the core block 80.

The control circuit 50 controls driving of the power semiconductor element 10. The control circuit 50 is mounted on a control board 51.

The control board 51 is a normal printed board, and is configured as a laminate in which glass epoxy resins are laminated in the 1 st direction a, for example.

The control board 51 is disposed in the inner region of the housing 20. The control board 51 has, for example, a lower surface disposed so as to face the upper surface of the sealing resin 40 and an upper surface facing the opposite side of the lower surface. The lower surface of the control board 51 and the upper surface of the sealing resin 40 are disposed at an interval D1 in the 1 st direction a. The control circuit 50 is formed on the upper surface of the control substrate 51, for example. An integrated circuit 52 connected to the control circuit 50 is mounted on the control board 51. The control substrate 51 is surrounded by the above-described upper portion 20B of the housing 20. The central portion of the control board 51 is disposed to overlap the insulating board 11 in the 1 st direction a. The outer peripheral portion of the control board 51 is arranged to overlap the lower portion 20A of the housing 20 in the 1 st direction a.

As shown in fig. 1 to 3, the control board 51 is provided with a plurality of through holes 53 and 54 that penetrate from the upper surface to the lower surface.

The plurality of through holes 53 are arranged in parallel in the 2 nd direction B. The plurality of through holes 54 are arranged in parallel in the 2 nd direction B. The through holes 53 and 54 are arranged in parallel with a space therebetween, for example, in a 3 rd direction C intersecting the 1 st direction a and the 2 nd direction B. The projecting portion of one drive control terminal 22 is inserted through each through hole 53 and joined to each through hole 53. The method of joining the drive control terminal 22 and the through hole 53 is not particularly limited, and examples thereof include welding, ultrasonic joining, and fusion welding. The drive control terminal 22 and the through hole 53 may be connected via a connector, for example. The 1 st portion 71 of one external connection terminal 70 is inserted through each through hole 54 and fitted into each through hole 54.

A wiring pattern, not shown, is formed on the inner peripheral surface of the through hole 53, and the drive control terminal 22 joined to the through hole 53 is electrically connected to the control circuit 50 and the integrated circuit 52. A wiring pattern, not shown, is formed on the inner peripheral surface of the through hole 54, and the external connection terminal 70 joined to the through hole 54 is electrically connected to the control circuit 50 and the integrated circuit 52.

The cover 60 is, for example, a flat plate-shaped member. The cover 60 closes the opening of the core block 80. The cover 60 has, for example: a lower surface disposed so as to face the upper surface of the control substrate 51; and an upper surface facing the opposite side to the lower surface and exposed to the outside of the power semiconductor device 100. The lower surface of the cover 60 and the upper surface of the control board 51 are arranged at intervals in the 1 st direction a. The cover 60 is surrounded by the above-described upper portion 20B of the housing 20, for example. The center portion of the cover 60 is arranged to overlap the insulating substrate 11 in the 1 st direction a. The outer peripheral portion of the cover 60 is arranged to overlap the above-described lower portion 20A of the housing 20 in the 1 st direction a.

As shown in fig. 2, the cover 60 is formed with a plurality of through holes 61 penetrating from the upper surface to the lower surface. The 3 rd portion 73 of the external connection terminal 70 is inserted through the through hole 61. The 3 rd portion 73 of the external connection terminal 70 is inserted through the through hole 61 and fixed to the through hole 61. The through-hole 61 is formed to overlap with the through-hole 54 of the control board 51 in the 1 st direction a.

The external connection terminal 70 has a 1 st portion 71, a 2 nd portion 72, a 3 rd portion 73, and a 4 th portion 74. The 1 st portion 71 is connected to the control substrate 51. The 2 nd part 72 is a part to which an external device is connected. The 3 rd portion 73 is located between the 1 st and 2 nd portions 71, 72 and is fixed with the cover 60. The 4 th portion 74 is a portion located between the 1 st portion 71 and the 3 rd portion 73. The 1 st portion 71, the 4 th portion 74, the 3 rd portion 73, and the 2 nd portion 72 are arranged side by side in the 1 st direction a in this order.

As described above, the 1 st part 71 is inserted into the through hole 54 penetrating the control board 51 and fitted into the through hole 54. The 1 st part 71 is configured as a press-fit portion. That is, the 1 st portion 71 is provided to be elastically deformed in the radial direction of the through hole 54.

In a cross section perpendicular to the 1 st direction a, the maximum width of the 1 st portion 71 fitted in the through hole 54 is narrower than the maximum width of the 1 st portion 71 in a state where it is not fitted in the through hole 54. The maximum width of the 1 st portion 71 in a state of not fitting in the through hole 54 is wider than the inner diameter of the through hole 54. The maximum width of the 1 st portion 71 fitted in the through hole 54 is larger than the maximum widths of the 2 nd portions 72 and the 3 rd portions 73 in a cross section perpendicular to the 1 st direction a, for example.

As shown in fig. 1, the 1 st portion 71 is formed in an O-shape in a cross section along the 1 st direction a and the 3 rd direction C, for example. In this case, as shown in fig. 3, the width of the 1 st portion 71 in the 3 rd direction C is wider than the width of the 1 st portion 71 in the 2 nd direction, and becomes the maximum width of the 1 st portion 71. The 1 st portion 71 may be formed in an S-shape in a cross section perpendicular to the 1 st direction a, for example.

The front end (lower end) of the 1 st portion 71 in the 1 st direction a is disposed below the lower surface of the control board 51. The front end (lower end) of the 1 st portion 71 in the 1 st direction a is disposed at a distance from the upper surface of the encapsulating resin 40 in the 1 st direction a. The distance D2 between the lower surface of the control board 51 and the front end of the 1 st part 71 in the 1 st direction a is shorter than the above-described interval D1.

The upper end of the 1 st portion 71 in the 1 st direction a is disposed above the upper surface of the control board 51. The upper end of the 1 st section 71 is connected to the 3 rd section 73 via the 4 th section 74. The 1 st part 71 is disposed in the inner region of the housing 20. The central portion of the 1 st portion 71 in the 1 st direction a is in contact with the inner peripheral surface of the through hole 54.

The 2 nd part 72 protrudes outward from the cover 60.

As described above, the 3 rd part 73 is inserted into the through hole 61 penetrating the cover 60 and fixed to the through hole 61. The cover 60 and the external connection terminal 70 are formed as one component, for example. The cover 60 and the external connection terminal 70 can be formed by insert molding. The cover 60 and the external connection terminals 70 may be formed by combining separate members, for example. The cap 60 and the external connection terminal 70 can be formed by external fitting. The external connection terminal 70 is, for example, pressed into the cap 60.

The external connection terminals 70 are inserted only into the through holes 54 penetrating the control board 51. The external connection terminals 70 are not directly connected to the housing 20.

The rigidity of each of the 2 nd portion 72, the 3 rd portion 73, and the 4 th portion 74 of the external connection terminal 70 is, for example, the same. In a cross section perpendicular to the 1 st direction a, the minimum value of the cross-sectional area of the 4 th portion 74 is equal to the minimum value of the cross-sectional area of the 3 rd portion 73, for example. In the 3 rd direction C, the minimum width of the 4 th portion 74 is, for example, equal to the minimum width of the 3 rd portion 73. In the 2 nd direction B, the minimum width of the 4 th portion 74 is, for example, equal to the minimum width of the 3 rd portion 73.

The power semiconductor device 100 may also include a plurality of control boards 51 stacked in the 1 st direction a (see, for example, fig. 7). In this case, the through holes 53 of the control boards 51 are formed so as to overlap each other when viewed from the 1 st direction a. Similarly, the through holes 54 of the control boards 51 are formed so as to overlap each other when viewed from the 1 st direction a. One 1 st portion 71 is fitted into each through hole 54 formed in each control board 51.

< method for manufacturing Power semiconductor device >

First, as shown in fig. 4, a pellet 80 is prepared. At the core block 80, the power semiconductor element 10, the insulating substrate 11, the wiring pattern 14, the sensor 15, and the wires 31, 32 are encapsulated by the encapsulating resin 40. The upper portion 20B of the case 20 and the upper portions of the main electrode terminal 21 and the drive control terminal 22 are exposed from the sealing resin 40.

Next, as shown in fig. 5, a control board 51 is prepared, and the control board 51 is mounted with a control circuit 50 and an integrated circuit 52, and has a plurality of through holes 53 and a plurality of through holes 54 formed therein. Next, the drive control terminal 22 is inserted through the through hole 53 and joined to the through hole 53, whereby the control board 51 is fixed to the core block 80. The through-holes 54 are arranged at intervals from the upper surface of the sealing resin 40 in the 1 st direction a.

Next, as shown in fig. 6, an integrated body of the cap 60 and the external connection terminal 70 is prepared. As described above, the cover 60 and the external connection terminals 70 are formed by, for example, insert molding. In this case, the cap 60 and the external connection terminal 70 are integrally formed as one component by disposing the 3 rd portion 73 of the external connection terminal 70 inside a mold and injecting and filling resin into the mold. The cover 60 and the external connection terminals 70 may be formed by, for example, insert molding. In this case, the cap 60 and the external connection terminal 70 are integrally formed as an object obtained by combining separate members by press-fitting the external connection terminal 70 into the cap 60 prepared as a separate member.

Next, the 1 st portion 71 of the external connection terminal 70 is inserted into the through hole 54 penetrating the control board 51 and fitted into the through hole 54, whereby the integrated body of the cap 60 and the external connection terminal 70 is fixed to the integrated body of the core block 80 and the control board 51. The 1 st portion 71 is inserted only into the through hole 54 penetrating the control board 51. Preferably, the cover 60 engages the above-mentioned upper portion 20B of the housing 20. The method of joining the cover 60 and the housing 20 is not particularly limited, and the joining is performed by, for example, adhesion or snap-fit. Thus, the power semiconductor device 100 shown in fig. 1 is manufactured.

< Effect >

The power semiconductor device 100 includes: a power semiconductor element 10; a control circuit 50 that controls the power semiconductor element 10; a control board 51 on which the control circuit 50 is mounted; a cover 60 disposed so as to overlap at least a part of the control board 51 in the 1 st direction a; and at least one external connection terminal 70 having a 1 st portion 71 connected to the control substrate 51, a 2 nd portion 72 connected to an external device, and a 3 rd portion 73 located between the 1 st portion 71 and the 2 nd portion 72 and fixed to the cover 60, the 1 st portion 71 being configured as a press-fit portion.

According to the power semiconductor device 100, the control board 51 and the external connection terminal 70 are realized by the 1 st portion 71 configured as the press-fit portion without depending on the solder, and therefore, in the manufacturing method of the power semiconductor device 100, the number of soldering processes is reduced as compared with the above-described conventional IPM manufacturing method. As a result, the power semiconductor device 100 can be manufactured more easily than the conventional IPM.

In the power semiconductor device 100, since the external connection terminals 70 are fixed to the cover 60, the cover 60 and the external connection terminals 70 do not interfere with each other when the cover 60 is fixed to the case 20. Further, although the 1 st portion 71 is connected to the control board 51 when the cover 60 is fixed to the housing 20, the 1 st portion 71 is configured as a press-fit portion and is elastically deformable. Therefore, in the power semiconductor device 100, compared to the conventional IPM in which the external connection terminal is soldered to the control board, deformation of the cover 60 and the external connection terminal 70 other than the 1 st portion 71 is suppressed, and a decrease in reliability is suppressed.

In the power semiconductor device 100, the at least one external connection terminal 70 includes a plurality of external connection terminals 70. The plurality of external connection terminals 70 are arranged in parallel in a 2 nd direction B intersecting the 1 st direction a. The 1 st portions 71 (press-fit portions) of the plurality of external connection terminals 70 are arranged so as to be elastically deformed in the 3 rd direction C intersecting the 1 st direction a and the 2 nd direction B.

When the direction in which each of the 1 st portions 71 is elastically deformed is the same as the direction in which the plurality of through holes 54 are arranged, a relatively large stress is applied to a portion of the control board 51 located between the adjacent through holes 54, and thus, the control board may be broken. In order to suppress the occurrence of chipping, it is necessary to widen the portion, that is, to lengthen the interval in the 2 nd direction B between the plurality of through holes 54.

In contrast, in the power semiconductor device 100, the direction in which each of the 1 st portions 71 is elastically deformed is the 3 rd direction C intersecting the 2 nd direction B in which the plurality of through holes 54 are arranged, and therefore, a large stress is not applied to a portion of the control substrate 51 located between the adjacent through holes 54, and the portion is less likely to be broken. As a result, the power semiconductor device 100 can be made narrow, that is, the interval in the 2 nd direction B between the plurality of through holes 54 can be made relatively short, and therefore the power semiconductor device 100 can be made compact.

In the power semiconductor device 100, the 3 rd portion 73 of the external connection terminal 70 and the cover 60 are integrated by insert molding. In the power semiconductor device 100, the 3 rd portion 73 of the external connection terminal 70 and the cover 60 may be integrated by insert molding. In either case, the integrated body of the external connection terminal 70 and the cover 60 can be easily manufactured.

Embodiment 2.

As shown in fig. 7, the power semiconductor device according to embodiment 2 has basically the same configuration as the power semiconductor device 100 according to embodiment 1, and is different from the power semiconductor device 100 in that the rigidity of the 4 th portion 74 is lower than the rigidity of the 3 rd portion 73.

In a cross section perpendicular to the 1 st direction a, the minimum value of the sectional area of the 4 th portion 74 is smaller than the minimum value of the sectional area of the 3 rd portion 73, for example. In the 3 rd direction C, the minimum width of the 4 th portion 74 is narrower than the minimum width of the 3 rd portion 73, for example. In the 2 nd direction B, the minimum width of the 4 th portion 74 is, for example, equal to the minimum width of the 3 rd portion 73. In addition, in the 2 nd direction B, the minimum width of the 4 th portion 74 may be narrower than the minimum width of the 3 rd portion 73, for example.

The 4 th part 74 includes, for example, a narrow part 75 and two widened parts 76 arranged in the 1 st direction a with the narrow part 75 interposed therebetween. The upper widened portion 76 is connected to the 3 rd portion 73. The lower flare 76 is connected to the 1 st section 71.

In the 3 rd direction C, the minimum width of the widened portion 76 is wider than the minimum width of the narrow portion 75. In the 2 nd direction B, the minimum width of the widened portion 76 is equal to the minimum width of the narrow portion 75, for example. The minimum value of the sectional area of the 4 th portion 74 in the cross section perpendicular to the 1 st direction a is the sectional area of the narrow portion 75. The above-described minimum width of the 4 th portion 74 in the 3 rd direction C is the minimum width of the narrow width portion 75.

In a cross section perpendicular to the 1 st direction a, the minimum value of the cross-sectional area of the enlarged portion 76 is larger than the minimum value of the cross-sectional area of each of the 1 st portion 71 and the 3 rd portion 73, for example. The minimum width of the widened portion 76 in the 3 rd direction C is wider than the minimum width of each of the 1 st and 3 rd portions 71, 73, for example. The minimum width of the widened portion 76 in the 2 nd direction B is equal to the minimum width of the 1 st and 3 rd portions 71 and 73, for example.

The power semiconductor device according to embodiment 2 has basically the same configuration as the power semiconductor device 100, and therefore can obtain the same effects as the power semiconductor device 100.

Further, according to the power semiconductor device of embodiment 2, the stress applied to the external connection terminal 70 can be concentrated on the narrow portion 75 of the 4 th portion 74. Therefore, the connection reliability of the 1 st part 71 in embodiment 2 is higher than that in embodiment 1.

Embodiment 3.

As shown in fig. 8, a power semiconductor device 102 according to embodiment 3 has basically the same configuration as the power semiconductor device 100 according to embodiment 1, and is different from the power semiconductor device 100 in that a case 20 includes a wall portion 23.

The wall portion 23 is disposed in a region of the internal region of the housing 20 located on the opposite side of the cover 60 from the 1 st portion 71, that is, a region located below the control board 51. The wall portion 23 divides an area located on the opposite side of the cover 60 with respect to the 1 st section 71 into a 1 st area R1 and a 2 nd area R2.

In the 1 st region R1, the power semiconductor element 10, the insulating substrate 11, the wiring pattern 14, the sensor 15, the plurality of main electrode terminals 21, the plurality of drive control terminals 22, the leads 31 and 32, and the encapsulating resin 40 are arranged. In other words, the 1 st region R1 is encapsulated by the encapsulating resin 40. In the 2 nd region R2, the encapsulating resin 40 is not disposed.

The tip of the 1 st part 71 of the external connection terminal 70 is disposed in the 2 nd region R2.

The wall portion 23 protrudes upward with respect to the upper surface of the lower portion 20A of the housing 20. The wall portion 23 protrudes upward from the upper surface of the sealing resin 40. In the 1 st direction a, the interval between the upper surface of the wall portion 23 and the lower surface of the control board 51 is narrower than the interval D3 between the upper surface of the sealing resin 40 and the lower surface of the control board 51. The distance D2 between the lower surface of the control board 51 and the front end of the 1 st part 71 in the 1 st direction a is longer than the above-described interval D3. In other words, the tip (lower end) of the 1 st portion 71 is disposed below the upper surface of the sealing resin 40.

As shown in fig. 9, the wall portion 23 is connected to the upper portion 20B. The upper portion 20B and the wall portion 23 are disposed so as to surround the plurality of external connection terminals 70 when the case 20 is viewed from the 1 st direction a. The outer peripheral surface of the wall portion 23 facing the 1 st region R1 has a rounded shape when the case 20 is viewed from the 1 st direction a.

Further, the wall portion 23 may be provided in a ring shape when the housing 20 is viewed from the 1 st direction a. The wall portion 23 may not be connected to the upper portion 20B. In this case, the entire periphery of the 2 nd region R2 may be surrounded by the 1 st region R1 when the casing 20 is viewed from the 1 st direction a.

Since the power semiconductor device 102 according to embodiment 3 has basically the same configuration as the power semiconductor device 100, the same effects as those of the power semiconductor device 100 can be obtained.

Further, according to the power semiconductor device 102 of embodiment 3, the distance D2 between the lower surface of the control board 51 and the tip of the 1 st segment 71 in the 1 st direction a is longer than the above-described interval D3. In comparison of the power semiconductor device 102 and the power semiconductor device 100 in which the above-described distances D2 are equal to each other, the interval D3 between the upper surface of the encapsulating resin 40 of the power semiconductor device 102 and the lower surface of the control substrate 51 is shorter than the interval D1 between the upper surface of the encapsulating resin 40 of the power semiconductor device 100 and the lower surface of the control substrate 51. As a result, the power semiconductor device 102 can be reduced in size in the 1 st direction a compared to the power semiconductor device 100.

The power semiconductor device 102 according to embodiment 3 may have basically the same configuration as the power semiconductor device according to embodiment 2, but differs from the power semiconductor device according to embodiment 2 in that the case 20 includes the wall portion 23. The power semiconductor devices 100 and 102 according to embodiments 1 to 3 may have only one external connection terminal 70.

While embodiments of the present invention have been described, it should be understood that the embodiments disclosed herein are illustrative in all respects and not restrictive. The scope of the present invention is indicated by the claims, and is intended to include meanings equivalent to the claims and all modifications within the scope.