阅读说明：本技术 一种具有异质集成双面腔结构的微系统封装外壳及制作方法 (Micro-system packaging shell with heterogeneous integrated double-sided cavity structure and manufacturing method ) 是由 庞学满 曹坤 戴雷 陈雨钊 于 2020-12-22 设计创作，主要内容包括：本发明涉及一种具有异质集成双面腔结构的微系统封装外壳及制作方法,包括外壳本体,其中间安装金属底板,将外壳本体形成双面腔结构,还包括上金属框以及下金属框,金属底板中间镂空,且在镂空处嵌设多层陶瓷基板,多层陶瓷基板的表面、底面均开设腔体；上金属框、下金属框将多层陶瓷基板与金属底板之间形成密封；多层陶瓷基板边缘位置设置基板台阶结构,金属底板镂空边缘同样设置底板台阶结构,基板台阶结构与底板台阶结构匹配；在多层陶瓷基板上开设通孔,所述的通孔内设置台阶,通孔内嵌设SMP玻璃绝缘子；在上金属框、下金属框的侧壁均开设槽口,槽口内嵌入陶瓷绝缘子；本发明可以实现多芯片气密性封装,微波性能好,可靠性高。(The invention relates to a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure and a manufacturing method thereof, and the microsystem packaging shell comprises a shell body, an upper metal frame and a lower metal frame, wherein a metal bottom plate is arranged in the middle of the shell body, the shell body forms the double-sided cavity structure, the middle of the metal bottom plate is hollowed, a multilayer ceramic substrate is embedded in the hollowed part, and cavities are formed in the surface and the bottom surface of the multilayer ceramic substrate; the upper metal frame and the lower metal frame seal the multilayer ceramic substrate and the metal bottom plate; the edge position of the multilayer ceramic substrate is provided with a substrate step structure, the hollow edge of the metal bottom plate is also provided with a bottom plate step structure, and the substrate step structure is matched with the bottom plate step structure; forming a through hole in the multilayer ceramic substrate, wherein a step is arranged in the through hole, and an SMP glass insulator is embedded in the through hole; notches are formed in the side walls of the upper metal frame and the lower metal frame, and ceramic insulators are embedded into the notches; the invention can realize multi-chip air-tight package, and has good microwave performance and high reliability.)

1. A microsystem packaging shell with a heterogeneous integrated double-sided cavity structure is characterized in that: the double-cavity shell comprises a shell body, an upper metal frame and a lower metal frame, wherein a metal bottom plate is arranged in the middle of the shell body, the shell body is formed into a double-surface cavity structure, the upper metal frame is welded on the upper surface of the metal bottom plate, and the lower metal frame is welded on the lower surface of a metal plate to form an integral frame of the shell body;

the middle of the metal bottom plate is hollowed, the multilayer ceramic substrate is embedded in the hollowed part, cavities are formed in the surface and the bottom surface of the multilayer ceramic substrate, circuit patterns are arranged on the surface of the multilayer ceramic substrate, and the circuit patterns are not communicated with the metal bottom plate to form an island part;

the edge position of the multilayer ceramic substrate is provided with a substrate step structure, the hollow edge of the metal bottom plate is also provided with a bottom plate step structure, and the substrate step structure is matched with the bottom plate step structure;

forming a through hole in the multilayer ceramic substrate, wherein a step is arranged in the through hole, and an SMP glass insulator is embedded in the through hole;

notches are formed in the side walls of the upper metal frame and the lower metal frame, and ceramic insulators are embedded into the notches.

2. A microsystem package with a heterogeneous integrated double sided cavity structure as claimed in claim 1, characterized in that: the ceramic insulator comprises an upper piece part and a lower piece part, wherein the upper piece part is an I-shaped reinforcing rib which is arranged on the surface of the lower piece part;

a plurality of transmission lines are arranged on the surface of the lower sheet part in parallel, each transmission line comprises a strip line, and the two ends of the strip line are connected with a microstrip line to form a combination form of the microstrip line, the strip line and the microstrip line;

the end parts, far away from the notches, of the plurality of transmission lines arranged in parallel are provided with a plurality of leads, each lead comprises a high-frequency lead and a low-frequency lead, the high-frequency leads are welded on the transmission line outer-side micro-strip lines used for high-frequency transmission, the low-frequency leads are welded on the transmission line outer-side micro-strip lines used for low-frequency transmission, and the high-frequency leads are located on the surface of the lower piece part of the ceramic insulator and are close to the SMP glass.

3. The microsystem package housing with a heterogeneous integrated double sided cavity structure of claim 2, wherein: the transmission lines arranged in parallel on the surface of the lower part comprise a high-frequency transmission line and a low-frequency transmission line, and when the transmission lines are high-frequency transmission lines, the width size ratio of each section of the combination of the microstrip line, the strip line and the microstrip line is 0.20mm-0.40 mm: 0.10mm-0.20 mm: 0.20mm-0.40mm, when the transmission line is a low-frequency transmission line, the width size ratio of each section of the microstrip line, the strip line and the microstrip line combination is 0.70mm-1.00 mm: 0.50mm-0.70 mm: 0.70mm-1.00 mm.

4. A manufacturing method of a multilayer ceramic substrate of a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure is characterized in that: the method specifically comprises the following steps:

firstly, batching and ball milling are carried out according to the formula of alumina or aluminum nitride ceramics, and a raw ceramic chip with the thickness of 0.2mm-0.35mm is cast for standby;

secondly, punching and filling holes in the green ceramic chip by adopting a high-temperature co-fired multilayer ceramic process, and printing a metalized pattern on the surface of the green ceramic chip;

processing hollow aluminum plates on the surface and the bottom of the green ceramic chip treated by the high-temperature co-fired multilayer ceramic process, and manufacturing a substrate step structure at the edge in a residual material backfilling mode;

and fourthly, cutting the whole stack of the green ceramics of the substrate obtained in the third step, coating the metalized slurry on the position needing welding, and sintering to obtain the multilayer ceramic substrate.

5. A method for manufacturing a shell of a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure is characterized in that: the method specifically comprises the following steps:

firstly, annealing an upper metal frame and a lower metal frame at the temperature of 800-1200 ℃ in a hydrogen atmosphere, cooling along with a furnace, and electroplating nickel layers on the surfaces of the upper metal frame and the lower metal frame, wherein the thickness of the nickel layers is 0.5-3.0 mu m; electroplating a nickel layer on the surface of the metal base plate, wherein the thickness of the nickel layer is 2.5-6.0 μm; chemically plating nickel layers on the surfaces of the ceramic insulator and the multilayer ceramic substrate, wherein the thickness of the nickel layers is 0.5-1.5 mu m;

secondly, brazing the metal bottom plate, the upper metal frame, the lower metal frame, the ceramic insulator, the lead, the multilayer ceramic substrate and the SMP glass insulator together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished shell A;

and thirdly, carrying out nickel plating and gold plating on the surface of the semi-finished shell A obtained in the second step, wherein the island on the surface of the multilayer ceramic substrate is electrically communicated by adopting a gold wire bonding method, and then the surface of the shell is plated with gold by adopting an electrogilding method to form a finished shell.

6. The method for fabricating a package of microsystems packaging shell with heterogeneous integrated double-sided cavity structure as claimed in claim 5, wherein: in the second step, the specific steps of making up the semi-finished shell a include:

step 21, simultaneously placing the lead and the ceramic insulator in a graphite mold, limiting by using a graphite plug, placing a silver-copper solder sheet with the thickness of 0.05mm at the welding position between the lead and the ceramic insulator, and brazing the lead and the ceramic insulator together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

22, respectively placing an upper metal frame, a metal base plate and a ceramic insulator with a lead wire matched with the upper metal frame in a graphite mold, limiting by using a graphite plug, placing silver-copper welding flux sheets with the thickness of 0.10mm at the welding position between the upper metal frame and the metal base plate, and brazing the silver-copper welding flux sheets together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

step 23, respectively placing the semi-finished product obtained in the step 22, the lower metal frame and the ceramic insulator with the lead matched with the lower metal frame in a graphite mold, limiting by using a graphite plug, placing silver-copper welding flux sheets with the thickness of 0.10mm at the welding position between the lower metal frame and the metal bottom plate, and brazing the silver-copper welding flux sheets together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

and 24, placing the semi-finished product obtained in the step 23 in a graphite mold, embedding the multilayer ceramic substrate at a corresponding position of the metal base plate of the semi-finished product obtained in the step 23, placing silver-copper solder sheets with the thickness of 0.05mm on the upper surfaces of gaps at the connecting positions of the ceramic substrate and the metal base plate, placing the SMP glass insulator at a corresponding position in the multilayer ceramic substrate, placing silver-copper solder rings with the thickness of 0.05mm on the upper surfaces of the gaps at the connecting positions of the SMP glass insulator and the multilayer ceramic substrate, and soldering the SMP glass insulator and the multilayer ceramic substrate together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃.

7. The method for fabricating a package for a microsystem package with a heterogeneous integrated double-sided cavity structure according to claim 6, wherein the method comprises the following steps: in the third step, the specific steps of forming the finished housing include:

step 31, performing chemical nickel plating on the surface metal area of the semi-finished shell A obtained in the step two, wherein the thickness of the nickel layer is 0.5-2.5 microns;

step 32, performing chemical gold plating on the metal area on the surface of the semi-finished product shell with the nickel plated surface obtained in the step 31, wherein the thickness of the gold layer is 0.1-0.3 μm;

step 33, bonding a gold wire with the diameter of 25 microns on a metal area on the surface of the multilayer ceramic substrate, which is not electrically communicated, and a middle pin part of the SMP glass insulator in an ultrasonic bonding mode, and communicating the gold wire to the position of the metal baseplate to realize the electrical communication between all isolated islands and the metal baseplate;

step 34, plating gold on the shell after bonding and communication by adopting an electroplating method, wherein the thickness of the gold layer is 1.5-5.0 μm;

and step 35, removing all the bonded gold wires in the shell after completing the gold electroplating.

Technical Field

The invention relates to a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure and a manufacturing method thereof, belonging to the field of heterogeneous integrated three-dimensional packaging shells.

Background

In order to meet the demands for miniaturization, intelligence and networking of low power consumption and high performance computing, communication and control devices, it is necessary to try to integrate more and more functions into smaller and smaller device spaces during circuit design, i.e. to package more and more circuit integration of different functions into a miniaturized box. The three-dimensional integrated packaging structure is a good scheme for solving the problems, namely, on the basis of a traditional two-dimensional transmission structure circuit, a vertical radio frequency transmission channel is added, the three-dimensional packaging of a circuit module is realized, the packaging volume of an electronic module is reduced to the maximum extent, the goal of increasing effective load is reached, and the three-dimensional integrated packaging structure has great significance for occupying the high-tech field in the future.

The packaging is carried out in a three-dimensional structure form, namely different signals such as radio frequency, control and power supply and the like need to be transmitted in a plane, and the same signals need to be transmitted in the vertical direction; meanwhile, the signals are transmitted by adopting different transmission channels such as micro-strips, coaxial lines, electric connecting lines and the like, so that great difficulty is brought to the development of a matched shell. The signal transmission medium of the traditional packaging shell is generally made of a single material, the signal transmission direction inside the shell is mostly in one plane, and the cavity structure of the packaging chip is a single-face cavity structure, so that the requirement that the shell can meet the hybrid integration of three-dimensional packaging and multiple materials is urgently needed.

Disclosure of Invention

The invention provides a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure and a manufacturing method thereof, which are used for researching a shell which comprises a ceramic microstrip type input/output terminal and a microcrystalline glass SMP type insulator in the three-dimensional direction and can realize multi-chip double-sided packaging by integrating preparation technologies of different types of packaging shells, and well meeting the requirements of multi-chip module packaging on miniaturization, light weight and multiple functions.

The technical scheme adopted by the invention for solving the technical problems is as follows:

a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure comprises a shell body, an upper metal frame and a lower metal frame, wherein a metal bottom plate is arranged in the middle of the shell body, the shell body is formed into a double-sided cavity structure, the upper metal frame is welded on the upper surface of the metal bottom plate, and the lower metal frame is welded on the lower surface of a metal plate to form an integral frame of the shell body;

the middle of the metal bottom plate is hollowed, the multilayer ceramic substrate is embedded in the hollowed part, cavities are formed in the surface and the bottom surface of the multilayer ceramic substrate, circuit patterns are arranged on the surface of the multilayer ceramic substrate, and the circuit patterns are not communicated with the metal bottom plate to form an island part;

the edge position of the multilayer ceramic substrate is provided with a substrate step structure, the hollow edge of the metal bottom plate is also provided with a bottom plate step structure, and the substrate step structure is matched with the bottom plate step structure;

forming a through hole in the multilayer ceramic substrate, wherein a step is arranged in the through hole, and an SMP glass insulator is embedded in the through hole;

notches are formed in the side walls of the upper metal frame and the lower metal frame, and ceramic insulators are embedded into the notches;

as a further preferred aspect of the present invention, the ceramic insulator includes an upper plate portion and a lower plate portion, wherein the upper plate portion is an i-shaped reinforcing rib provided on a surface of the lower plate portion;

a plurality of transmission lines are arranged on the surface of the lower sheet part in parallel, each transmission line comprises a strip line, and the two ends of the strip line are connected with a microstrip line to form a combination form of the microstrip line, the strip line and the microstrip line;

the end parts, far away from the notches, of the transmission lines which are arranged in parallel are provided with a plurality of lead wires, each lead wire comprises a high-frequency lead wire and a low-frequency lead wire, the high-frequency lead wires are welded on the micro-strip lines on the outer sides of the transmission lines used for high-frequency transmission, the low-frequency lead wires are welded on the micro-strip lines on the outer sides of the transmission lines used for low-frequency transmission, and the high-frequency lead wires are located on the surface of the lower;

the end parts, far away from the notches, of the transmission lines which are arranged in parallel are provided with a plurality of lead wires, the lead wires comprise high-frequency lead wires and low-frequency lead wires, the high-frequency lead wires and the low-frequency lead wires are embedded between the adjacent transmission lines, and the high-frequency lead wires and the low-frequency lead wires are arranged at intervals; as a further preferred aspect of the present invention, the plurality of transmission lines arranged in parallel on the surface of the lower portion include a high-frequency transmission line and a low-frequency transmission line, and when the transmission lines are high-frequency transmission lines, the width dimension ratio of each segment of the microstrip line, the strip line, and the microstrip line combination is (0.20mm-0.40 mm): (0.10mm-0.20 mm): (0.20mm-0.40mm), when the transmission line is a low-frequency transmission line, the width size ratio of each section of the microstrip line, the strip line and the microstrip line combination is (0.70mm-1.00 mm): (0.50mm-0.70 mm): (0.70mm-1.00 mm);

a manufacturing method of a multilayer ceramic substrate of a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure specifically comprises the following steps:

firstly, batching and ball milling are carried out according to the formula of alumina or aluminum nitride ceramics, and a raw ceramic chip with the thickness of 0.2mm-0.35mm is cast for standby;

secondly, punching and filling holes in the green ceramic chip by adopting a high-temperature co-fired multilayer ceramic process, and printing a metalized pattern on the surface of the green ceramic chip;

processing hollow aluminum plates on the surface and the bottom of the green ceramic chip treated by the high-temperature co-fired multilayer ceramic process, and manufacturing a substrate step structure at the edge in a residual material backfilling mode;

fourthly, cutting the whole stack of the green porcelain of the substrate obtained in the third step, coating metalized slurry on the position needing welding, and sintering to obtain the multilayer ceramic substrate;

a method for manufacturing a micro-system packaging shell with a heterogeneous integrated double-sided cavity structure specifically comprises the following steps:

firstly, annealing an upper metal frame and a lower metal frame at the temperature of 800-1200 ℃ in a hydrogen atmosphere, cooling along with a furnace, and electroplating nickel layers on the surfaces of the upper metal frame and the lower metal frame, wherein the thickness of the nickel layers is 0.5-3.0 mu m; electroplating a nickel layer on the surface of the metal base plate, wherein the thickness of the nickel layer is 2.5-6.0 μm; chemically plating nickel layers on the surfaces of the ceramic insulator and the multilayer ceramic substrate, wherein the thickness of the nickel layers is 0.5-1.5 mu m;

secondly, brazing the metal bottom plate, the upper metal frame, the lower metal frame, the ceramic insulator, the lead, the multilayer ceramic substrate and the SMP glass insulator together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished shell A;

thirdly, carrying out nickel plating and gold plating on the surface of the semi-finished shell A obtained in the second step, wherein the island on the surface of the multilayer ceramic substrate is electrically communicated by adopting a gold wire bonding method, and then the surface of the shell is plated with gold by adopting an electrogilding method to form a finished shell;

as a further preference of the present invention, in the second step, the specific steps of composing the semi-finished casing a include:

step 21, simultaneously placing the lead and the ceramic insulator in a graphite mold, limiting by using a graphite plug, placing a silver-copper solder sheet with the thickness of 0.05mm at the welding position between the lead and the ceramic insulator, and brazing the lead and the ceramic insulator together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

22, respectively placing an upper metal frame, a metal base plate and a ceramic insulator with a lead wire matched with the upper metal frame in a graphite mold, limiting by using a graphite plug, placing silver-copper welding flux sheets with the thickness of 0.10mm at the welding position between the upper metal frame and the metal base plate, and brazing the silver-copper welding flux sheets together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

step 23, respectively placing the semi-finished product obtained in the step 22, the lower metal frame and the ceramic insulator with the lead matched with the lower metal frame in a graphite mold, limiting by using a graphite plug, placing silver-copper welding flux sheets with the thickness of 0.10mm at the welding position between the lower metal frame and the metal bottom plate, and brazing the silver-copper welding flux sheets together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

24, placing the semi-finished product obtained in the step 23 in a graphite mold, embedding a multilayer ceramic substrate at a corresponding position of a metal bottom plate of the semi-finished product obtained in the step 23, placing silver-copper solder sheets with the thickness of 0.05mm on the upper surface of a gap at the connecting position of the ceramic substrate and the metal bottom plate, placing an SMP glass insulator at a corresponding position in the multilayer ceramic substrate, placing silver-copper solder rings with the thickness of 0.05mm on the upper surface of a gap at the connecting position of the SMP glass insulator and the multilayer ceramic substrate, and soldering the SMP glass insulator and the multilayer ceramic substrate together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

as a further preference of the present invention, in the third step, the specific steps of forming the finished casing include:

step 31, performing chemical nickel plating on the surface metal area of the semi-finished shell A obtained in the step two, wherein the thickness of the nickel layer is 0.5-2.5 microns;

step 32, performing chemical gold plating on the metal area on the surface of the semi-finished product shell with the nickel plated surface obtained in the step 31, wherein the thickness of the gold layer is 0.1-0.3 μm;

step 33, bonding a gold wire with the diameter of 25 microns on a metal area on the surface of the multilayer ceramic substrate, which is not electrically communicated, and a middle pin part of the SMP glass insulator in an ultrasonic bonding mode, and communicating the gold wire to the position of the metal baseplate to realize the electrical communication between all isolated islands and the metal baseplate;

step 34, plating gold on the shell after bonding and communication by adopting an electroplating method, wherein the thickness of the gold layer is 1.5-5.0 μm;

and step 35, removing all the bonded gold wires in the shell after completing the gold electroplating.

Through the technical scheme, compared with the prior art, the invention has the following beneficial effects:

1. the shell provided by the invention adopts a double-sided cavity structure and is provided with different transmission structure terminals in the plane and vertical directions, so that the three-dimensional packaging of a digital-analog hybrid circuit and a radio frequency circuit is realized;

2. the bottom surface of the multilayer ceramic substrate in the shell is provided with the cavity, the cavity provides an I/O port required by a digital-analog hybrid circuit through the ceramic transmission terminal, and the port can be designed automatically, so that the actual requirement is met;

3. the invention provides a transmission port required by a radio frequency circuit in the cavity of the shell through the glass insulator, and the glass insulator can show excellent transmission characteristics in the frequency range of up to 40 GHz;

4. the surface and the bottom surface of the multilayer ceramic substrate provided by the invention are respectively provided with the cavity, the material between the two cavities as the intermediate heat sink is a lightweight material used on a high-power device packaging shell, and a connector is added on the heat sink to realize signal transmission, so that the heat dissipation and weight limitation are both considered, and the requirements of high reliability, multiple functions and miniaturization are met.

Drawings

The invention is further illustrated with reference to the following figures and examples.

FIG. 1 is a front view of a microsystem package with a heterogeneous integrated double-sided cavity structure provided by the present invention;

FIG. 2 is a side view of a microsystem package housing with a heterogeneous integrated double-sided cavity structure provided in the present invention;

FIG. 3 is a side view of a microsystem package with a heterogeneous integrated double-sided cavity structure provided in the present invention with respect to the cavity;

FIG. 4 is a side view of a multilayer ceramic substrate provided in accordance with the present invention and matching FIG. 3;

FIG. 5 is a schematic structural view of a ceramic insulator without a lead wire welded thereto according to the present invention;

fig. 6 is a schematic structural view of a ceramic insulator to which a lead wire is welded according to the present invention.

In the figure: the structure comprises an upper metal frame 1, a metal bottom plate 2, a lower metal frame 3, a low-frequency lead 4, a high-frequency lead 5, a ceramic insulator 6, an SMP glass insulator 7, a multilayer ceramic substrate 8, a cavity on the surface of the multilayer ceramic substrate 9, an upper part 10, a lower part 11, a transmission line 12 and a lead 13.

Detailed Description

The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic views illustrating only the basic structure of the present invention in a schematic manner, and thus show only the constitution related to the present invention.

The invention aims to provide a microsystem packaging shell with a heterogeneous integrated double-sided cavity structure, which has multiple output terminals, a double-sided cavity structure, good heat dissipation and high reliability, and can be seen from the side view of figure 2, the shell is in a double-sided cavity metal shell form and can work in a DC-40GHz frequency band, namely, a metal bottom plate 2 is arranged in the middle of a shell body, the shell body forms the double-sided cavity structure, the microsystem packaging shell also comprises an upper metal frame 1 and a lower metal frame, the metal bottom plate is made of tungsten copper or molybdenum copper materials, the upper metal frame is welded on the upper surface of the metal bottom plate, and the lower metal frame 3 is welded on the lower surface of a metal plate to form an integral frame of the shell body; the middle of the metal bottom plate is hollowed, a multilayer ceramic substrate 8 is embedded in the hollowed part and is an alumina substrate or an aluminum nitride substrate, as shown in fig. 1 and 4, cavities are formed in the surface and the bottom of the multilayer ceramic substrate, a circuit pattern is arranged on the surface of the multilayer ceramic substrate, and the circuit pattern is not communicated with the metal bottom plate to form an island part;

as can be seen from fig. 3 and 4, there may be two cavities 9 on the surface of the multilayer ceramic substrate, the substrate step structure is arranged at the edge of the multilayer ceramic substrate, the bottom plate step structure is also arranged at the hollowed edge of the metal bottom plate, and the substrate step structure is matched with the bottom plate step structure; a through hole is formed in the substrate, a step is arranged in the through hole, and an SMP glass insulator 7 is embedded in the through hole; notches are formed in the side walls of the upper metal frame and the lower metal frame, and ceramic insulators 6 are embedded into the notches.

5-6, the ceramic insulator is obtained by co-firing 92% -95% of alumina ceramic and tungsten metallization, and includes an upper piece portion 10 and a lower piece portion 11, the upper piece portion is an i-shaped reinforcing rib disposed on the surface of the lower piece portion, the width of the reinforcing rib is greater than or equal to 0.5mm, and the height of the reinforcing rib is the same as the height of the ceramic insulator; a plurality of transmission lines 12 are arranged on the surface of the lower sheet part in parallel, and as can be seen from fig. 5, each transmission line comprises a strip line, and microstrip lines are connected to two ends of the strip line to form a combination form of the microstrip lines, the strip lines and the microstrip lines, namely the microstrip lines, the strip lines and the microstrip lines form a dumbbell-shaped transmission line structure; the end parts, far away from the notches, of the transmission lines arranged in parallel are provided with a plurality of lead wires 13, the lead wires are metal lead wires and comprise high-frequency lead wires 5 and low-frequency lead wires 4, the high-frequency lead wires are welded on the micro-strip wires on the outer sides of the transmission lines used for high-frequency transmission, the low-frequency lead wires are welded on the micro-strip wires on the outer sides of the transmission lines used for low-frequency transmission, the high-frequency lead wires are located on the surface of the lower piece part of the ceramic insulator and are close to the SMP glass insulator, the width range of the high-frequency lead wires is 0.10mm-0.30 mm. The transmission lines arranged in parallel on the surface of the lower part comprise a high-frequency transmission line and a low-frequency transmission line, and when the transmission lines are high-frequency transmission lines, the width size ratio of each section of the combination of the microstrip line, the strip line and the microstrip line is (0.20mm-0.40 mm): (0.10mm-0.20 mm): (0.20mm-0.40mm), it can work at 12-40GHz, when the transmission line is a low-frequency transmission line, the width dimension ratio of each segment of microstrip line, strip line, microstrip line combination is (0.70mm-1.00 mm): (0.50mm-0.70 mm): (0.70mm-1.00mm), it can work at DC-12 GHz.

The preferred embodiment of the present application further provides a method for manufacturing a multilayer ceramic substrate of a microsystem package housing with a heterogeneous integrated double-sided cavity structure, which specifically includes the following steps:

firstly, batching and ball milling are carried out according to the formula of alumina or aluminum nitride ceramics, and a raw ceramic chip with the thickness of 0.2mm-0.35mm is cast for standby;

secondly, punching and filling holes in the green ceramic chip by adopting a high temperature co-fired multilayer ceramic process (HTCC), and printing a metallization pattern on the surface of the green ceramic chip;

processing hollow aluminum plates on the surface and the bottom of the green ceramic chip treated by the high-temperature co-fired multilayer ceramic process, and manufacturing a substrate step structure at the edge in a residual material backfilling mode;

and fourthly, cutting the whole stack of the green ceramics of the substrate obtained in the third step, coating the metalized slurry on the position needing welding, and sintering to obtain the multilayer ceramic substrate.

According to the manufacturing method of the multilayer ceramic substrate, the applicant further optimizes the content of the third step, and the method specifically comprises the following steps:

preparing an aluminum plate provided with a positioning pin, and preparing a hollow aluminum plate provided with a frame and a positioning pin, wherein the positioning pin on the aluminum plate is consistent with the positioning hole of the green ceramic chip in the edge position;

secondly, opening a cavity in a chip area on the surface of the green ceramic chip to enable the chip area to have a hollow cavity figure with design requirements;

thirdly, sequentially overlapping a plurality of layers of ceramic raw material belts, which are positioned at the edge step positions, on positioning pins of an aluminum plate, on the raw ceramic chip formed by the plurality of layers of ceramic raw material belts, laying an upper stainless steel sheet on the surface of the raw ceramic chip, wherein the upper stainless steel sheet is provided with a hollowed-out part, the pattern of the hollowed-out part is the same as that of the hollowed-out cavity body of the ceramic raw material belt positioned at the uppermost layer, and the upper stainless steel sheet is superposed with the hollowed-out cavity body pattern on the raw ceramic chip;

fourthly, paving a soft silica gel pad on the surface of the upper layer stainless steel sheet;

fifthly, carrying out vacuum packaging and laminating treatment on the structure formed in the fourth step through a plastic packaging bag, wherein the hot-pressing pressure is 100-300psi, and obtaining an upper-layer step ceramic structure with a cavity;

sixthly, preparing a cavity and a step-shaped structure on the bottom surface of the green ceramic chip by adopting the method from the second step to the fifth step;

seventhly, processing the surface part of the hot-pressed green ceramic chip by adopting a laser ablation technology, wherein the step-shaped part of the surface is processed according to the requirements of products, and the green ceramic belt with the cavity and the step excess material generated in the processing process are reserved;

fifthly, processing the Malan film by a laser ablation technology, wherein a cavity is formed in the Malan film, and the size of the cavity is matched with the step-shaped convex part;

ninthly, stacking a lower layer of stainless steel sheet on the surface of a hollow aluminum plate provided with a frame and a positioning pin, sequentially stacking the bottom part of the raw ceramic chip, the raw ceramic belt with a cavity, the flange film, the step excess material and the upper layer of stainless steel sheet on the surface of the lower layer of stainless steel sheet, and respectively arranging soft silica gel pads on the upper surface and the lower surface of the hollow aluminum plate;

performing secondary encapsulation and hot pressing on the structure obtained in the ninth step again, wherein the hot pressing parameter is 500-1000 psi; and after hot pressing is finished, taking out the step excess materials and the Kalimeris film to obtain the whole stack of green porcelain with the cavity on the upper surface and the cavity on the lower surface and the step-shaped edge.

Meanwhile, a manufacturing method of the microsystem packaging shell with the heterogeneous integrated double-sided cavity structure is also provided, and the method specifically comprises the following steps:

firstly, annealing an upper metal frame and a lower metal frame at the temperature of 800-1200 ℃ in a hydrogen atmosphere, cooling along with a furnace, and electroplating nickel layers on the surfaces of the upper metal frame and the lower metal frame, wherein the thickness of the nickel layers is 0.5-3.0 mu m; electroplating a nickel layer on the surface of the metal base plate, wherein the thickness of the nickel layer is 2.5-6.0 μm; and chemically plating nickel layers on the surfaces of the ceramic insulator and the multilayer ceramic substrate, wherein the thickness of the nickel layers is 0.5-1.5 mu m.

Secondly, brazing the metal bottom plate, the upper metal frame, the lower metal frame, the ceramic insulator, the lead, the multilayer ceramic substrate and the SMP glass insulator together through silver-copper solder under the atmosphere condition of 790 +/-10 ℃ to form a semi-finished shell A;

the method comprises the following steps of:

step 21, simultaneously placing the lead and the ceramic insulator in a graphite mold, limiting by using a graphite plug, placing a silver-copper solder sheet with the thickness of 0.05mm at the welding position between the lead and the ceramic insulator, and brazing the lead and the ceramic insulator together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

22, respectively placing an upper metal frame, a metal base plate and a ceramic insulator with a lead wire matched with the upper metal frame in a graphite mold, limiting by using a graphite plug, placing silver-copper welding flux sheets with the thickness of 0.10mm at the welding position between the upper metal frame and the metal base plate, and brazing the silver-copper welding flux sheets together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

step 23, respectively placing the semi-finished product obtained in the step 22, the lower metal frame and the ceramic insulator with the lead matched with the lower metal frame in a graphite mold, limiting by using a graphite plug, placing silver-copper welding flux sheets with the thickness of 0.10mm at the welding position between the lower metal frame and the metal bottom plate, and brazing the silver-copper welding flux sheets together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃;

and 24, placing the semi-finished product obtained in the step 23 in a graphite mold, embedding the multilayer ceramic substrate at a corresponding position of the metal base plate of the semi-finished product obtained in the step 23, placing silver-copper solder sheets with the thickness of 0.05mm on the upper surfaces of gaps at the connecting positions of the ceramic substrate and the metal base plate, placing the SMP glass insulator at a corresponding position in the multilayer ceramic substrate, placing silver-copper solder rings with the thickness of 0.05mm on the upper surfaces of the gaps at the connecting positions of the SMP glass insulator and the multilayer ceramic substrate, and soldering the SMP glass insulator and the multilayer ceramic substrate together under the nitrogen-hydrogen mixing condition of 790 +/-10 ℃.

Thirdly, carrying out nickel plating and gold plating on the surface of the semi-finished shell A obtained in the second step, wherein the island on the surface of the multilayer ceramic substrate is electrically communicated by adopting a gold wire bonding method, and then the surface of the shell is plated with gold by adopting an electrogilding method to form a finished shell;

wherein, the concrete steps of forming the finished shell comprise:

step 31, performing chemical nickel plating on the surface metal area of the semi-finished shell A obtained in the step two, wherein the thickness of the nickel layer is 0.5-2.5 microns;

step 32, performing chemical gold plating on the metal area on the surface of the semi-finished product shell with the nickel plated surface obtained in the step 31, wherein the thickness of the gold layer is 0.1-0.3 μm;

step 33, bonding a gold wire with the diameter of 25 microns on a metal area on the surface of the multilayer ceramic substrate, which is not electrically communicated, and a middle pin part of the SMP glass insulator in an ultrasonic bonding mode, and communicating the gold wire to the position of the metal baseplate to realize the electrical communication between all isolated islands and the metal baseplate;

step 34, plating gold on the shell after bonding and communication by adopting an electroplating method, wherein the thickness of the gold layer is 1.5-5.0 μm;

and 35, after the gold electroplating is finished, all the bonded gold wires in the shell are completely removed, and a tool for removing the gold wires needs to have soft texture so as not to damage the gold-plated layer on the metal surface.

In order to better verify the feasibility that the double-sided cavity ceramic substrate in the shell can realize local sealing of the double-sided cavity, after the chip is packaged, the airtightness is detected, and the helium leakage rate of the local sealing airtightness of the chip area is less than or equal to 5 multiplied by 10^-3Pa·cm³(s) (He); the frequency of high-frequency signal transmitted by the shell can reach 40GHz, the air tightness after the sealing cap is detected, and the helium leakage rate is less than or equal to 5 multiplied by 10^-3Pa·cm³(s) (He) can endure temperature cycles of-65 ℃ to 175 ℃ for 100 times; it can be concluded from this that the present application providesThe shell and the manufacturing method can realize the air-tight encapsulation of multiple chips, have good microwave performance and high reliability and meet the miniaturization requirement.

It will be understood by those skilled in the art that, unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms, such as those defined in commonly used dictionaries, should be interpreted as having a meaning that is consistent with their meaning in the context of the prior art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.

The meaning of "and/or" as used herein is intended to include both the individual components or both.

The term "connected" as used herein may mean either a direct connection between components or an indirect connection between components via other components.

In light of the foregoing description of the preferred embodiment of the present invention, many modifications and variations will be apparent to those skilled in the art without departing from the spirit and scope of the invention. The technical scope of the present invention is not limited to the content of the specification, and must be determined according to the scope of the claims.