阅读说明：本技术 红外探测器模组的制造方法 (Manufacturing method of infrared detector module ) 是由 陈钢 曾广锋 高涛 于 2020-12-25 设计创作，主要内容包括：本发明提供了一种红外探测器模组的制造方法,其包括步骤S1-S8。在本申请的制造方法中,其利用面沉积工艺在陶瓷基板上通过金属层堆积方式形成金属围坝,并由此形成红外探测器模组的外壳体,而这种工艺方法能够根据需求直接控制外壳体的尺寸大小,从而使得形成的红外探测器模组满足小型化、轻型化、多样化的需求。并且,由金属围坝和陶瓷基板构成的外壳体与传统的陶瓷管壳结构相比,由于外壳体采用金属和陶瓷制成、且制作工艺简单,由此极大地降低了红外探测器模组的成本。此外,采用本申请的制造方法形成的红外探测器模组利用所述多个第四金属层取代传统的顶针输出方式,由此极大地降低了红外探测器模组在所述厚度方向上的尺寸。(The invention provides a manufacturing method of an infrared detector module, which comprises the steps of S1-S8. In the manufacturing method, the metal box dam is formed on the ceramic substrate through a metal layer accumulation mode by using a surface deposition process, and the outer shell of the infrared detector module is formed accordingly. And, compare with traditional ceramic tube shell structure by the shell body that metal box dam and ceramic substrate constitute, because the shell body adopts metal and ceramic to make, and simple manufacture process, greatly reduced the cost of infrared detector module from this. In addition, the infrared detector module formed by the manufacturing method of the application utilizes the fourth metal layers to replace a traditional thimble output mode, so that the size of the infrared detector module in the thickness direction is greatly reduced.)

1. A manufacturing method of an infrared detector module is characterized by comprising the following steps:

s1, providing a ceramic substrate (11), wherein the ceramic substrate (11) is provided with a first surface (111) and a second surface (112) in the thickness direction (H);

s2, metalizing the first surface (111) of the ceramic substrate (11) by adopting a surface deposition process, and forming a first metal layer (11A), a second metal layer (11B) and a plurality of third metal layers (11C), wherein the second metal layer (11B) surrounds the outer side of the first metal layer (11A), and the plurality of third metal layers (11C) are positioned between the second metal layer (11B) and the first metal layer (11A);

s3, adopting a surface deposition process to metalize the second surface (112) of the ceramic substrate (11) and forming a plurality of fourth metal layers (11D);

s4, manufacturing connection lines on the first metal layer (11A), the third metal layers (11C) and the fourth metal layers (11D) of the ceramic substrate (11);

s5, stacking a metal layer on the second metal layer (11B) by adopting a surface deposition process, and forming a metal dam (12) protruding out of the first metal layer (11A), wherein the metal dam (12) and the ceramic substrate (11) form an outer shell (1) of the infrared detector module;

s6, providing an infrared chip (2), fixing the infrared chip (2) on the first metal layer (11A) of the ceramic substrate (11), and electrically connecting the infrared chip (2) with the plurality of third metal layers (11C) by using a lead;

s7, providing a getter (3), arranging the getter (3) in the outer shell (1), and activating the getter (3) in a vacuum environment;

and S8, providing an optical window (4) and a first connecting piece (5), and fixing the optical window (4) on the metal surrounding dam (12) of the outer shell (1) through the first connecting piece (5) under the high-temperature and high-temperature vacuum environment, so that the optical window (4) and the outer shell (1) enclose a closed detector cavity.

2. The method for manufacturing an infrared detector module according to claim 1, wherein in step S7, the getter (3) is activated by high temperature.

3. The method for manufacturing an infrared detector module as set forth in claim 1,

in step S3, a plurality of metal layers (11E) for getters are further formed on the second surface (112) of the ceramic substrate (11) by a surface deposition process;

in step S7, the getter (3) is energized and activated by the getter metal layer (11E).

4. The method of claim 1, wherein in step S3, a plurality of metal layers (11F) for heat dissipation are further formed on the second surface (112) of the ceramic substrate (11) by a surface deposition process, and the metal layers (11F) for heat dissipation are spaced apart from the fourth metal layers (11D).

5. The method of claim 1, wherein the surface deposition process is at least one of evaporation, magnetron sputtering, electroplating, or electroless plating.

6. The infrared detector module and the method of manufacturing the same as set forth in claim 1, characterized in that the height of the metal dam (12) in the thickness direction (H) is 10-60 times the thickness of the first metal layer (11A).

7. The infrared detector module and the manufacturing method thereof as set forth in claim 1,

the infrared chip (2) is fixed on a first metal layer (11A) of the ceramic substrate (11) through a second connecting piece (6);

preferably, the second connecting member (6) is a conductive paste or a solder sheet.

8. The infrared detector module and the manufacturing method thereof according to claim 1, characterized in that the getter (3) is disposed on the first surface (111) and between the second metal layer (11B) and the first metal layer (11A).

9. The infrared detector module and the manufacturing method thereof according to claim 1 are characterized in that the number of the getters (3) is four, and the four getters (3) are arranged at intervals.

10. The infrared detector module and the manufacturing method thereof according to claim 1, wherein each fourth metal layer (11D) on the second surface (112) of the ceramic substrate (11) is a planar plate-like structure.

Technical Field

The invention relates to the technical field of infrared detectors, in particular to a manufacturing method of an infrared detector module.

Background

At present, the whole outer shell of the existing infrared detector module is made of ceramic materials and is formed into a ceramic tube shell structure, but the cost of the infrared detector module is increased due to the high price and the scarce supply resources of the ceramic tube shell; and because the specification model of ceramic cartridge is few, overall dimension is big on the large side high, output mode is single (thimble output) to can not satisfy the demand of miniaturization, lightweight, the diversified design of infrared detector module.

Disclosure of Invention

In view of the problems in the background art, an object of the present invention is to provide a method for manufacturing an infrared detector module, which greatly reduces the cost of the infrared detector module and meets the requirements of miniaturization, light weight and diversification of the infrared detector module.

In order to achieve the above object, the present invention provides a method for manufacturing an infrared detector module, which includes steps S1-S8. S1, providing a ceramic substrate having a first surface and a second surface in a thickness direction. S2, a surface deposition process is adopted to metalize the first surface of the ceramic substrate and form a first metal layer, a second metal layer and a plurality of third metal layers, wherein the second metal layer surrounds the outer side of the first metal layer, and the plurality of third metal layers are located between the second metal layer and the first metal layer. And S3, adopting a surface deposition process to metalize the second surface of the ceramic substrate and forming a plurality of fourth metal layers. And S4, manufacturing connection lines on the first metal layer, the third metal layers and the fourth metal layers of the ceramic substrate. And S5, stacking a metal layer on the second metal layer by adopting a surface deposition process and forming a metal dam protruding out of the first metal layer, wherein the metal dam and the ceramic substrate form an outer shell of the infrared detector module. And S6, providing an infrared chip, fixing the infrared chip on the first metal layer of the ceramic substrate, and electrically connecting the infrared chip with the plurality of third metal layers by using a lead. And S7, providing a getter, arranging the getter in the outer shell, and activating the getter in a vacuum environment. And S8, providing an optical window and a first connecting piece, and fixing the optical window to the metal dam of the outer shell through the first connecting piece under the high-temperature vacuum environment, so that the optical window and the outer shell form a closed detector cavity.

In the method of manufacturing an infrared detector module according to some embodiments, the getter is activated by a high temperature in step S7.

In the method of manufacturing an infrared detector module according to some embodiments, in step S3, a plurality of metal layers for getters are further formed on the second surface of the ceramic substrate using a surface deposition process. In step S7, the getter is electrically activated by the getter through the metal layer.

In the method for manufacturing an infrared detector module according to some embodiments, in step S3, a plurality of metal layers for heat dissipation are further formed on the second surface of the ceramic substrate by using a surface deposition process, and the metal layers for heat dissipation are spaced apart from the plurality of fourth metal layers.

In the method for manufacturing an infrared detector module according to some embodiments, the surface deposition process is at least one of evaporation, magnetron sputtering, electroplating or chemical plating.

In the method of manufacturing an infrared detector module according to some embodiments, the height of the metal dam in the thickness direction is 10 to 60 times the thickness of the first metal layer.

In a method of manufacturing an infrared detector module according to some embodiments, an infrared chip is fixed on a first metal layer of a ceramic substrate by a second connection member. Preferably, the second connecting member is a conductive paste or a solder sheet.

In a method of manufacturing an infrared detector module according to some embodiments, a getter is disposed on the first surface between the second metal layer and the first metal layer.

In the manufacturing method of the infrared detector module according to some embodiments, the number of the getters is four, and the four getters are arranged at intervals.

In the method of manufacturing an infrared detector module according to some embodiments, each of the fourth metal layers on the second surface of the ceramic substrate has a planar plate-like structure.

The invention has the following beneficial effects:

in the manufacturing method of the infrared detector module, the metal box dam is formed on the ceramic substrate in a metal layer accumulation mode by using a surface deposition process, and the outer shell of the infrared detector module is formed from the metal box dam. And, compare with traditional ceramic tube shell structure by the shell body that metal box dam and ceramic substrate constitute, because the shell body adopts metal and ceramic to make, and simple manufacture process, greatly reduced the cost of infrared detector module from this. In addition, the infrared detector module formed by the manufacturing method of the application utilizes the fourth metal layers to replace a traditional thimble output mode, so that the size of the infrared detector module in the thickness direction is greatly reduced.

Drawings

Fig. 1 is a perspective view of an infrared detector module.

Fig. 2 is an exploded view of fig. 1.

Fig. 3 is a schematic structural view of the outer case of fig. 2.

Fig. 4 is a schematic structural view of the ceramic substrate in fig. 3.

Fig. 5 is a schematic view of a backside structure of the ceramic substrate of fig. 4.

Wherein the reference numerals are as follows:

1 outer case 11F Heat radiating Metal layer

11 ceramic substrate 12 metal dam

111 first surface 2 infrared chip

112 second surface 3 getter

11A first Metal layer 4 optical Window

11B second metal layer 5 first connection

11C third metal layer 6 second connection

11D thickness direction of fourth metal layer H

11E getter metal layer

Detailed Description

In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are some embodiments of the present application, but not all embodiments.

Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs; the terminology used in the description of the application herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application; the terms "including" and "having," and any variations thereof, in the description and claims of this application and the description of the above figures are intended to cover non-exclusive inclusions.

The term "and/or" herein is merely an association describing an associated object, meaning that three relationships may exist, e.g., a and/or B, may mean: a exists alone, A and B exist simultaneously, and B exists alone.

Reference herein to "an embodiment" means that a particular feature, structure, or characteristic described in connection with the embodiment can be included in at least one embodiment of the application. The appearances of the phrase in various places in the specification are not necessarily all referring to the same embodiment, nor are separate or alternative embodiments mutually exclusive of other embodiments. It is explicitly and implicitly understood by one skilled in the art that the embodiments described herein can be combined with other embodiments.

A method of manufacturing an infrared detector module according to the present application will be described in detail below with reference to the accompanying drawings.

Referring to fig. 1 to 4, the method for manufacturing an infrared detector module of the present application includes steps S1-S8.

S1, providing a ceramic substrate 11 made of a ceramic material, the ceramic substrate 11 having a first surface 111 and a second surface 112 in a thickness direction H.

S2, metallizing the first surface 111 of the ceramic substrate 11 by a surface deposition process to form a first metal layer 11A, a second metal layer 11B and a plurality of third metal layers 11C, wherein the second metal layer 11B surrounds the outer side of the first metal layer 11A (i.e. they form a zigzag structure), and the plurality of third metal layers 11C are located between the second metal layer 11B and the first metal layer 11A, as shown in fig. 4.

S3, a surface deposition process is used to metalize the second surface 112 of the ceramic substrate 11 and form a plurality of fourth metal layers 11D.

S4, connecting lines are formed on the first metal layer 11A, the plurality of third metal layers 11C and the plurality of fourth metal layers 11D of the ceramic substrate 11. Specifically, the circuit connection may be performed by punching holes in the corresponding metal layers and filling the holes with a conductive material, wherein each third metal layer 11C is connected to one fourth metal layer 11D.

And S5, stacking metal layers on the second metal layer 11B by adopting a surface deposition process, and forming a metal dam 12 protruding out of the first metal layer 11A, wherein the metal dam 12 and the ceramic substrate 11 form the outer shell 1 of the infrared detector module.

S6, providing an infrared chip 2, fixing the infrared chip 2 on the first metal layer 11A of the ceramic substrate 11, and electrically connecting the infrared chip 2 with the plurality of third metal layers 11C by using wires (not shown). That is, the infrared chip 2 is electrically conducted with the outside via the wires, the plurality of third metal layers 11C and the plurality of fourth metal layers 11D.

S7, providing a getter 3, disposing the getter 3 in the outer housing 1, and activating the getter 3 under vacuum. Specifically, the getter 3 may be disposed on the inner side of the metal dam 12 and/or the ceramic substrate 11.

And S8, providing an optical window 4 and a first connecting piece 5, and fixing the optical window 4 on the metal dam 12 of the outer shell 1 through the first connecting piece 5 under the high-temperature and high-temperature vacuum environment, so that the optical window 4 and the outer shell 1 enclose a closed detector cavity and an infrared detector module is formed thereby.

In the manufacturing method of the infrared detector module, the metal box dam 12 is formed on the ceramic substrate 11 through a metal layer accumulation mode by using a surface deposition process, and the outer shell 1 of the infrared detector module is formed from the metal layer accumulation mode, and the size of the outer shell 1 can be directly controlled according to the requirement by using the process method, so that the formed infrared detector module meets the requirements of miniaturization, light weight and diversification. And, compare shell body 1 that constitutes by metal box dam 12 and ceramic substrate 11 with traditional ceramic tube shell structure, because shell body 1 adopts metal and ceramic to make, and the preparation simple process, greatly reduced the cost of infrared detector module from this. In addition, the infrared detector module formed by the manufacturing method of the present application utilizes the plurality of fourth metal layers 11D to replace a conventional thimble output mode, thereby greatly reducing the size of the infrared detector module in the thickness direction H.

In some embodiments, each third metal layer 11C on the first surface 111 of the ceramic substrate 11 has a planar plate-like structure and the thickness of the plurality of third metal layers 11C is substantially uniform.

In some embodiments, each fourth metal layer 11D on the second surface 112 of the ceramic substrate 11 has a planar plate-like structure and the thicknesses of the plurality of fourth metal layers 11D are substantially uniform, thereby reducing the size of the infrared detector module in the thickness direction H.

In some embodiments, the plurality of third metal layers 11C may be arranged in one or more rows, and correspondingly, the plurality of fourth metal layers 11D are also arranged in one or more rows, wherein each row of fourth metal layers 11D corresponds to a corresponding row of third metal layers 11C.

In some embodiments, the height of the metal dam 12 in the thickness direction H is 10-60 times the thickness of the first metal layer 11A. Of course, without limitation, the height of the metal box dam 12 may be set appropriately based on the use requirements.

In some embodiments, in steps S2-S5, the surface deposition process may be at least one of evaporation, magnetron sputtering, electroplating, or electroless plating.

In some embodiments, the getter 3 is disposed on the first surface 111 and between the second metal layer 11B and the first metal layer 11A.

In some embodiments, the number of the getters 3 is four, and the four getters 3 are spaced apart, thereby improving the suction effect of the getters 3 in the outer case 1.

In some embodiments, in step S7, the getter 3 may be activated by high temperature. In this embodiment, the getter 3 may be fixed in the outer casing 1 by means of adhesion. Specifically, in the high-temperature activation process of the getter 3, in order to avoid the infrared chip 2 from being damaged by high temperature and ensure the air suction effect of the getter 3, the activation temperature of the getter 3 is preferably 300 ℃ to 450 ℃, and the activation time is preferably 5min to 100 min.

In some embodiments, in step S3, referring to fig. 5, a plurality of metal layers 11E for getters are further formed on the second surface 112 of the ceramic substrate 11 using a surface deposition process. Further, in step S7, the getter 3 is electrically conducted to the outside through the getter metal layer 11E to be electrically activated. Specifically, the getter 3 may be welded on the getter metal layer 11E by resistance welding or ultrasonic welding.

In some embodiments, to facilitate the connection between the getter 3 and the outer casing 1, the getter 3 can be a sheet getter.

In some embodiments, referring to fig. 5, in step S3, a plurality of metal layers 11F for heat dissipation are further formed on the second surface 112 of the ceramic substrate 11 by a surface deposition process, each of the metal layers 11F for heat dissipation is disposed at an interval from the fourth metal layers 11D, and the metal layers 11F for heat dissipation are used for heat dissipation during the use of the infrared detector module, so that the safety performance of the infrared detector module is improved.

In some embodiments, in step S7, the infrared chip 2 may be fixed on the first metal layer 11A of the ceramic substrate 11 by the second connection member 6. Specifically, the second connection member 6 may be a solder sheet or a conductive paste.

In some embodiments, in step S8, the first connecting member 5 may be a solder sheet or a conductive adhesive.