阅读说明：本技术 沟槽栅器件及其制作方法 (Trench gate device and manufacturing method thereof ) 是由 赵龙杰 于 2020-07-16 设计创作，主要内容包括：本申请公开了一种沟槽栅器件及其制作方法,涉及半导体制造领域。该沟槽栅器件至少包括形成有超级结结构的衬底、形成于衬底中的沟槽栅结构、位于衬底表面的层间介质层；沟槽栅结构包括覆盖沟槽底部和侧壁的栅介质层、位于栅介质层内侧的多晶硅栅、位于多晶硅栅内侧的中间介质层、位于中间介质层内侧的辅助多晶硅层；在衬底中,沟槽栅结构的外侧形成有源区；层间介质层中形成有接触孔,多晶硅栅、辅助多晶硅层、源区分别通过接触孔引出；引出的辅助多晶硅层与引出的源区连接；解决了目前带有超级结结构的沟槽栅器件容易受到电磁干扰影响的问题；达到了降低电磁干扰对具有超级结结构的沟槽栅器件性能的影响的效果。(The application discloses a trench gate device and a manufacturing method thereof, and relates to the field of semiconductor manufacturing. The trench gate device at least comprises a substrate with a super junction structure, a trench gate structure formed in the substrate and an interlayer dielectric layer positioned on the surface of the substrate; the trench gate structure comprises a gate dielectric layer covering the bottom and the side wall of the trench, a polysilicon gate positioned on the inner side of the gate dielectric layer, an intermediate dielectric layer positioned on the inner side of the polysilicon gate, and an auxiliary polysilicon layer positioned on the inner side of the intermediate dielectric layer; forming an active region on the outer side of the trench gate structure in the substrate; a contact hole is formed in the interlayer dielectric layer, and the polysilicon gate, the auxiliary polysilicon layer and the source region are respectively led out through the contact hole; the led-out auxiliary polycrystalline silicon layer is connected with the led-out source region; the problem that the existing trench gate device with the super junction structure is easily influenced by electromagnetic interference is solved; the effect of reducing the influence of electromagnetic interference on the performance of the trench gate device with the super junction structure is achieved.)

1. A trench gate device is characterized by at least comprising a substrate with a super junction structure, a trench gate structure formed in the substrate and an interlayer dielectric layer positioned on the surface of the substrate;

the trench gate structure comprises a gate dielectric layer covering the bottom and the side wall of the trench, a polysilicon gate positioned on the inner side of the gate dielectric layer, an intermediate dielectric layer positioned on the inner side of the polysilicon gate, and an auxiliary polysilicon layer positioned on the inner side of the intermediate dielectric layer;

forming an active region on the outer side of the trench gate structure in the substrate;

a contact hole is formed in the interlayer dielectric layer, and the polysilicon gate, the auxiliary polysilicon layer and the source region are respectively led out through the contact hole;

the led-out auxiliary polycrystalline silicon layer is connected with the led-out source region.

2. The trench-gate device of claim 1, wherein a well region is formed in the substrate outside the trench-gate structure, and the source region is located on top of the well region.

3. The trench-gate device of claim 1, wherein the trench-gate structure is formed within an N-type pillar of the super junction structure.

4. The trench-gate device of claim 1 wherein the trench bottom is completely filled with polysilicon gate from 1/4 to 1/2 of the trench depth in the trench-gate structure.

5. A method for manufacturing a trench gate device, the method comprising:

forming a groove in the substrate with the super junction structure;

forming a gate dielectric layer in the groove;

filling a part of the groove with polysilicon to form a polysilicon gate;

forming a middle dielectric layer in the groove;

filling gaps in the grooves with polycrystalline silicon to form auxiliary polycrystalline silicon layers;

forming a source region of a trench gate device in the substrate;

depositing an interlayer dielectric layer, and forming a contact hole in the interlayer dielectric layer, wherein the contact hole is used for leading out the polysilicon gate, the auxiliary polysilicon layer and the source region;

and connecting the led-out auxiliary polycrystalline silicon layer with the led-out source region.

6. The method of claim 5, wherein the forming a trench in the substrate with the super junction structure formed therein comprises:

and forming the groove in the N-type column of the super junction structure in the substrate.

7. The method of claim 5, wherein the gate dielectric layer is an oxide layer.

8. The method of claim 5, wherein said filling a portion of said trench with polysilicon to form a polysilicon gate comprises:

polysilicon is deposited until the trench depth is completely filled at 1/4-1/2, forming a polysilicon gate.

9. The method of claim 6, wherein forming a source region of a trench-gate device in the substrate comprises:

forming a well region outside the trench;

and forming a source region of the trench gate device on the top of the well region.

Technical Field

The application relates to the field of semiconductor manufacturing, in particular to a trench gate device and a manufacturing method thereof.

Background

The super junction is a MOSFET structure used for improving the reverse breakdown voltage of the device and keeping the on-resistance small. The voltage resistance of the super junction product is a depletion region formed by lateral depletion of a special P column region and a nearby N epitaxial region, and voltage resistance protection capability is provided in the longitudinal direction.

With the development of the technology, the use of the super junction device is more and more extensive. The higher the integration requirement of the semiconductor device, the smaller the cell size of the device, the change of the device structure along with the requirement, and the appearance of the trench gate structure. Although devices employing trench-gate structures can achieve faster switching speeds and lower switching losses, they are also more susceptible to electromagnetic interference.

Disclosure of Invention

To solve the problems in the related art, the present application provides a trench gate device and a method for fabricating the same. The technical scheme is as follows:

in a first aspect, an embodiment of the present application provides a trench gate device, which at least includes a substrate formed with a super junction structure, a trench gate structure formed in the substrate, and an interlayer dielectric layer located on a surface of the substrate;

the trench gate structure comprises a gate dielectric layer covering the bottom and the side wall of the trench, a polysilicon gate positioned on the inner side of the gate dielectric layer, an intermediate dielectric layer positioned on the inner side of the polysilicon gate, and an auxiliary polysilicon layer positioned on the inner side of the intermediate dielectric layer;

forming an active region on the outer side of the trench gate structure in the substrate;

a contact hole is formed in the interlayer dielectric layer, and the polysilicon gate, the auxiliary polysilicon layer and the source region are respectively led out through the contact hole;

the led-out auxiliary polycrystalline silicon layer is connected with the led-out source region.

Optionally, a well region is formed in the substrate outside the trench gate structure, and the source region is located at the top of the well region.

Optionally, a trench gate structure is formed in the N-type column of the super junction structure.

Optionally, in the trench gate structure, the bottom of the trench is completely filled with the polysilicon gate from 1/4 to 1/2 of the trench depth.

In a second aspect, an embodiment of the present application provides a method for manufacturing a trench gate device, where the method includes:

forming a groove in the substrate with the super junction structure;

forming a gate dielectric layer in the groove;

filling a part of the groove with polysilicon to form a polysilicon gate;

forming a middle dielectric layer in the groove;

filling gaps in the grooves with polycrystalline silicon to form auxiliary polycrystalline silicon layers;

forming a source region of a trench gate device in a substrate;

depositing an interlayer dielectric layer, and forming a contact hole in the interlayer dielectric layer, wherein the contact hole is used for leading out the polysilicon gate, the auxiliary polysilicon layer and the source region;

and connecting the extracted auxiliary polycrystalline silicon layer with the extracted source region.

Optionally, forming a trench in the substrate with the super junction structure formed therein includes:

a trench is formed in the N-type pillar of the super junction structure in the substrate.

Optionally, the gate dielectric layer is an oxide layer.

Optionally, filling a part of the trench with polysilicon to form a polysilicon gate, including:

the polysilicon is deposited until the trench depth is completely filled at 1/4 to 1/2, forming a polysilicon gate.

Optionally, forming a source region of the trench gate device in the substrate includes:

forming a well region outside the trench;

and forming a source region of the trench gate device at the top of the well region.

The technical scheme at least comprises the following advantages:

forming a groove in a substrate with a super junction structure, forming a gate dielectric layer in the groove, filling a part of the groove with polysilicon to form a groove gate, forming an intermediate dielectric layer in the groove, filling a gap in the groove with polysilicon to form an auxiliary polysilicon layer, forming a source region, forming an interlayer dielectric layer, forming a contact hole, leading out a polysilicon gate, the auxiliary polysilicon layer and the source region by using the contact hole, and connecting the led-out auxiliary polysilicon layer with the source region; the problem that the existing trench gate device with the super junction structure is easily influenced by electromagnetic interference is solved; the effect of reducing the influence of electromagnetic interference on the performance of the trench gate device with the super junction structure is achieved.

Drawings

In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.

Fig. 1 is a schematic structural diagram of a trench gate device according to an embodiment of the present disclosure;

fig. 2 is a schematic diagram of a current versus time relationship of a trench gate device according to an embodiment of the present disclosure;

FIG. 3 is a schematic diagram of a voltage-to-gate-source capacitance relationship of a trench-gate device according to an embodiment of the present disclosure;

fig. 4 is a flowchart of a method for manufacturing a trench gate device according to an embodiment of the present disclosure;

fig. 5 is an implementation schematic diagram of a method for manufacturing a trench gate device according to an embodiment of the present disclosure;

fig. 6 is an implementation schematic diagram of a method for manufacturing a trench gate device according to an embodiment of the present disclosure;

fig. 7 is an implementation schematic diagram of a method for manufacturing a trench gate device according to an embodiment of the present disclosure;

wherein: 11, a substrate; 12, a gate dielectric layer; 13, polysilicon gate; 14, an intermediate dielectric layer; 15, auxiliary polysilicon layer; 16, a source region; 17, an interlayer dielectric layer; 18, a first type epitaxial layer; 19, a second type epitaxial layer; and 20, contacting the hole.

Detailed Description

The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.

In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.

In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.

The embodiment of the application provides a trench gate device, which at least comprises a substrate with a super junction structure, a trench gate structure formed in the substrate and an interlayer dielectric layer positioned on the surface of the substrate.

As shown in fig. 1, the trench gate structure includes a gate dielectric layer 12 covering the bottom and the sidewall of the trench, a polysilicon gate 13 located inside the gate dielectric layer 12, an intermediate dielectric layer 14 located inside the polysilicon gate 13, and an auxiliary polysilicon layer 15 located inside the intermediate dielectric layer.

The trench is completely filled with a sandwich structure consisting of a polysilicon gate 13, an intermediate dielectric layer 14 and an auxiliary polysilicon layer 15.

In the substrate, an active region 16 is formed outside the trench gate structure. Optionally, active regions are formed on two sides of the trench gate structure.

Second type epitaxial layers 19 are formed in the first type epitaxial layers 18 on the substrate 11, the first type and the second type are opposite, and the first type epitaxial layers 18 and the second type epitaxial layers 19 are alternately arranged to form a super junction structure.

In one example, the first type epitaxial layer is an N-type epitaxial layer and the second type epitaxial layer is a P-type epitaxial layer.

A contact hole 20 is formed in the interlayer dielectric layer 17, and the polysilicon gate 13, the auxiliary polysilicon layer 15 and the source region 16 are respectively led out through the contact hole 20.

The extracted auxiliary polysilicon layer 15 is connected to the source region 16.

As shown in fig. 1, a well region 21 is formed outside the trench gate structure, and the source region 16 is located on top of the well region 21. The doping types of the source region 16 and the well region 21 are opposite.

Optionally, well regions are formed on two sides of the trench gate structure.

In an alternative embodiment based on the embodiment shown in fig. 1, the first type epitaxial layer is an N-type epitaxial layer, the second type epitaxial layer is a P-type epitaxial layer, the N-type epitaxial layer and the P-type epitaxial layer are alternately arranged to form a super junction structure, and a trench gate structure is formed in an N-type column of the super junction structure.

In an alternative embodiment to that described in connection with fig. 1, in the trench-gate structure, the depth of the trench is from the bottom of the trenchCompletely filling the silicon substrate with polysilicon gate; the remaining space within the trench is partially filled with a polysilicon gate, with a gap in the trench.

In one example, in a trench gate structure, the trench is completely filled with polysilicon gate from the bottom of the trench to 1/3 of the trench depth; the space from 1/3 the depth of the trench to the top of the trench is partially filled by the polysilicon gate, and there is a gap in the space from 1/3 the depth of the trench to the top of the trench.

In one example, as shown in fig. 2, a curve 221 represents an existing trench-gate device, a curve 222 represents a trench-gate device provided in the embodiment of the present application, an abscissa represents time, and an ordinate represents current, and it can be seen that di/dt of the trench-gate device provided in the embodiment of the present application corresponding to the curve 222 is smaller than di/dt of the existing trench-gate device corresponding to the curve 221; as shown in fig. 3, the abscissa represents voltage, the ordinate represents Cgs, the curve 331 represents the existing trench-gate device, and the curve 332 represents the trench-gate device provided in the embodiment of the present application, it can be seen that Cgs/Cgd (gate-source capacitance/gate-drain capacitance) of the trench-gate device provided in the embodiment of the present application is greater than Cgs/Cgd of the existing trench-gate device.

Referring to fig. 4, a flowchart of a method for manufacturing a trench gate device according to an embodiment of the present application is shown, where the method at least includes the following steps:

step 401, forming a trench in the substrate with the super junction structure.

Step 402, a gate dielectric layer is formed in the trench.

At step 403, a portion of the trench is filled with polysilicon to form a polysilicon gate.

As shown in fig. 5, the bottom and sidewalls of the trench are covered by a gate dielectric layer 12, the bottom of the trench is filled with polysilicon after the first deposition of polysilicon, the sidewalls of the trench are also filled with polysilicon, a polysilicon gate 13 is formed, and a gap is formed in the trench.

When the trench is first filled with polysilicon, a layer of polysilicon forms on the substrate surface.

Step 404, an intermediate dielectric layer is formed in the trench.

As shown in fig. 6, an intermediate dielectric layer 14 is formed in the trench, and the polysilicon gate 13 is located between the intermediate dielectric layer 14 and the gate dielectric layer 12.

In forming the interlayer dielectric layer 14, an interlayer dielectric layer is formed on the surface of the substrate.

In step 405, the gap in the middle of the trench is filled with polysilicon to form an auxiliary polysilicon layer.

As shown in fig. 6, after the interlevel dielectric layer 14 is formed in the trench, a gap still exists in the trench.

The trench is refilled with polysilicon and as shown in figure 7, an auxiliary polysilicon layer 15 is formed within the trench and the trench is completely filled.

The intermediate dielectric layer 14 is located between the polysilicon gate 13 and the auxiliary polysilicon layer 15.

When the trench is filled with polysilicon for the second time, a layer of polysilicon is again formed on the surface of the substrate.

And after the groove gate structure is formed, removing the polycrystalline silicon, the intermediate dielectric layer and the gate dielectric layer on the surface of the substrate.

At step 406, source regions of the trench-gate devices are formed in the substrate.

The source region of the trench gate device is located at the outer side of the trench gate structure.

In one example, the source regions of the trench-gate device are located on both sides of the trench-gate structure, as shown in figure 1.

Step 407, an interlayer dielectric layer is deposited, and a contact hole is formed in the interlayer dielectric layer.

The polysilicon gate, the auxiliary polysilicon layer, and the source region are led out through the contact hole, as shown in fig. 1.

And step 408, connecting the extracted auxiliary polysilicon layer with the extracted source region.

Optionally, the led-out auxiliary polysilicon layer is connected with the led-out source region on the front metal layer.

In summary, in the method for manufacturing a trench gate device provided in the embodiment of the present application, a trench is formed in a substrate having a super junction structure, a gate dielectric layer is formed in the trench, a part of the trench is filled with polysilicon to form a trench gate, an intermediate dielectric layer is formed in the trench, the polysilicon is used again to fill a gap in the trench to form an auxiliary polysilicon layer, a source region is formed, an interlayer dielectric layer is formed, a contact hole is formed, a polysilicon gate, an auxiliary polysilicon layer, and a source region are led out through the contact hole, and the led-out auxiliary polysilicon layer is connected to the source region; the problem that the existing trench gate device with the super junction structure is easily influenced by electromagnetic interference is solved; the effect of reducing the influence of electromagnetic interference on the performance of the trench gate device with the super junction structure is achieved.

In an alternative embodiment based on the embodiment shown in fig. 4, a super junction structure with P-type columns and N-type columns alternately arranged is formed in an epitaxial layer on a substrate before trenches for manufacturing a trench gate structure are formed on the substrate.

In an alternative embodiment based on the embodiment shown in fig. 4, the step "forming a trench in a substrate formed with a super junction structure" may be implemented as follows:

and forming a groove for forming a groove gate structure in the N-type column of the super junction structure in the substrate.

Optionally, a trench region for forming a trench gate structure is defined above the N-type pillar, and the substrate is etched by an etching process to form a trench.

In an alternative embodiment based on the embodiment shown in fig. 4, the gate dielectric layer is an oxide layer.

In an alternative embodiment based on the embodiment shown in fig. 4, the material of the intermediate dielectric layer is a dielectric.

Such as: the intermediate dielectric layer is made of oxide, or the intermediate dielectric layer is made of non-conductive ceramic material.

In an alternative embodiment based on the embodiment shown in fig. 4, the step "filling a portion of the trench with polysilicon, forming a polysilicon gate" can be implemented as follows:

the polysilicon is deposited until the trench depth is completely filled at 1/4 to 1/2, forming a polysilicon gate.

When polysilicon is deposited, polysilicon layer is formed on the side wall of the groove, when the bottom of the groove is completely filled with polysilicon from 1/4 to 1/2 of the depth of the groove, the area from 1/4 to 1/2 of the depth of the groove to the top of the groove is not completely filled with polysilicon, and the formed gap is used for growing an intermediate dielectric layer and an auxiliary polysilicon layer.

In an alternative embodiment based on the embodiment shown in fig. 4, the step of "forming the source region of the trench-gate device in the substrate" may be implemented as follows:

a well region is formed outside the trench.

Optionally, after the trench gate structure is formed, a well region is formed in the substrate outside the trench gate structure through an ion implantation process. For example, P wells are formed in the substrate on both sides of the trench gate structure.

And forming a source region of the trench gate device at the top of the well region.

Optionally, a source region is formed on top of the well region by an ion implantation process, for example, an N + source region is formed on top of the P-well.

It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.