阅读说明：本技术 半导体封装用夹具结构体及包括其的半导体封装件 (Semiconductor package jig structure and semiconductor package including the same ) 是由 崔伦华 金泳勋 李泰宪 赵廷焄 于 2020-02-12 设计创作，主要内容包括：本发明涉及半导体封装用夹具结构体,更具体地,涉及由相互不同的材质的金属层构成适用于半导体封装的夹具结构体的材质,而不由单一金属构成,从而降低将以往无法适用的低费用、轻量材质的金属适用而制造的半导体封装件的价格,并可实现轻量化的半导体封装用夹具结构体。即,在本发明的半导体封装件内将封装件的结构进行电连接的夹具结构体,其特征在于,上述夹具结构体包括：主金属层,维持夹具结构体的形状；第一功能层,层叠于上述主金属层的一侧面,并适用与主金属层不同的种类的金属；第一接合层,形成于上述第一功能层与主金属层之间,适用可使第一功能层接合于主金属层的金属。(The present invention relates to a jig structure for semiconductor packaging, and more particularly, to a jig structure for semiconductor packaging, which is capable of reducing the cost of a semiconductor package manufactured by applying a metal, which is a low-cost and lightweight material that has not been conventionally applicable, to a jig structure for semiconductor packaging, which is made of metal layers of different materials, instead of a single metal, and which is suitable for semiconductor packaging, and which is capable of achieving weight reduction. That is, in the semiconductor package according to the present invention, a jig structure for electrically connecting structures of the package includes: a main metal layer maintaining the shape of the jig structure; a first functional layer laminated on one side surface of the main metal layer and adapted to a metal of a type different from that of the main metal layer; and a first bonding layer formed between the first functional layer and the main metal layer, and made of a metal capable of bonding the first functional layer to the main metal layer.)

1. A jig structure (10) for semiconductor packaging, which electrically connects the structures of packages inside a semiconductor package, is characterized in that the jig structure (10) for semiconductor packaging comprises:

a main metal layer (100) that maintains the shape of the jig structure (10);

a first functional layer (200) which is laminated on one side surface of the main metal layer (100) and to which a metal of a different type from the main metal layer (100) is applied;

and a first bonding layer (300) which is formed between the first functional layer (200) and the primary metal layer (100) and to which a metal capable of bonding the first functional layer (200) to the primary metal layer (100) is applied.

2. The jig structure for semiconductor packaging according to claim 1, wherein the thickness of the first functional layer (200) is thinner than the thickness of the main metal layer (100).

3. The jig structure for semiconductor packaging according to claim 1, wherein the main metal layer (100) is formed of a single metal of aluminum (Al).

4. The clip structure for semiconductor package according to claim 1, wherein the main metal layer (100) comprises 50% or more of aluminum (Al) based on the total weight ratio of the main metal layer (100), and the remainder is a metal alloy comprising one or more of copper (Cu), magnesium (Mg), nickel (Ni), palladium (Pd), silver (Ag), gold (Au), manganese (Mn), zinc (Zn), silicon (Si), chromium (Cr), and titanium (Ti).

5. The clip structure for semiconductor package according to claim 1, wherein the first functional layer (200) is formed of a single metal of copper (Cu).

6. The clip structure for semiconductor package according to claim 1, wherein the first functional layer (200) comprises 50% or more of copper (Cu) based on the total weight ratio of the first functional layer (200), and the remainder is a metal alloy comprising one or more of aluminum (Al), silver (Ag), iron (Fe), gold (Au), palladium (Pd), nickel (Ni), tin (Sn), and lead (Pb).

7. The jig structure for semiconductor packaging according to claim 1, wherein nickel (Ni) or titanium (Ti) is applied to the first bonding layer (300).

8. The jig structure for semiconductor packaging according to claim 1, further comprising:

a second functional layer (400) which is laminated on the other side surface of the main metal layer (100) and to which a metal of a different type from the main metal layer (100) is applied;

and a second bonding layer (500) which is formed between the second functional layer (400) and the primary metal layer (100) and to which a metal capable of bonding the second functional layer (400) to the primary metal layer (100) is applied.

9. A semiconductor package is characterized in that a plurality of semiconductor chips are mounted on a substrate,

the method comprises the following steps:

a lead frame composed of one or more pads and one or more lead terminals;

one or more semiconductor chips mounted on the pad;

a jig structure body electrically connecting the semiconductor chip and the lead terminals; and

a package body capable of protecting a periphery of the semiconductor chip by molding,

the jig structure for semiconductor packaging according to any one of claims 1 to 8.

Technical Field

The present invention relates to a jig structure for semiconductor packaging and a semiconductor package including the same, and more particularly, to a jig structure for semiconductor packaging and a semiconductor package including the same, in which a material of the jig structure suitable for semiconductor packaging is formed of metal layers of different materials, and not formed of a single metal, thereby reducing the price of a semiconductor package manufactured by applying a metal, which has not been conventionally applicable, to a low-cost and lightweight material, and achieving weight reduction.

Background

Generally, a semiconductor package includes a semiconductor chip, a lead frame, and a package body, wherein the semiconductor chip is attached to a pad of the lead frame, and a wire and a lead of the lead frame are bonded (bonding) to be electrically connected.

However, the stack package using the conventional wire realizes the exchange of electric signals by the wire, and thus the speed is slow, and the electrical characteristics of each chip are deteriorated by using a large number of wires. In addition, in order to form the wires, the substrate needs to have an additional area, which increases the size of the package, and a Gap (Gap) for bonding the wires to the bonding pads of the respective chips is required, which causes a problem that the overall height of the package is unnecessarily increased.

Therefore, a package structure using a clip structure of metal, which is disclosed in korean patent No. 1208332, korean utility model No. 0482370, korean patent No. 1669902 and korean patent No. 1631232, has superior electrical connection performance and thermal stability, and is easy and effective in heat release, compared to a semiconductor package using a conventional wire, is provided.

Further, although the conventional jig structure is made of copper material for welding, the jig has a problem of high cost and heavy weight due to the characteristics of the copper material. Such a problem is associated with an increase in manufacturing costs of various electronic products using semiconductor chip packages, and the weight of the jig is a very important problem for products that invest much cost in light weight as in smart phones.

Disclosure of Invention

The present invention has been made to solve the above-described problems, and relates to a jig structure for semiconductor packaging and a semiconductor package including the same, in which a metal having low cost and light weight is applied to a material of a main metal layer and a metal having excellent conductivity is applied to a portion where electrical connection is achieved, thereby reducing the price and weight of the semiconductor package and improving electrical connection characteristics.

In the semiconductor package according to the present invention, a jig structure for electrically connecting structures of packages is provided, the jig structure including: a main metal layer maintaining the shape of the jig structure; a first functional layer laminated on one side surface of the main metal layer and adapted to a metal of a type different from that of the main metal layer; and a first bonding layer formed between the first functional layer and the main metal layer, and made of a metal capable of bonding the first functional layer to the main metal layer.

In the present invention, the thickness of the first functional layer is thinner than the thickness of the main metal layer.

In addition, the present invention is characterized in that the main metal layer is formed of a single metal made of aluminum (Al).

In the main metal layer, aluminum (Al) is 50% or more based on the total weight ratio of the main metal layer, and the remainder is a metal alloy containing one or more of copper (Cu), magnesium (Mg), nickel (Ni), palladium (Pd), silver (Ag), gold (Au), manganese (Mn), zinc (Zn), silicon (Si), chromium (Cr), and titanium (Ti).

In the present invention, the first functional layer is formed of a single metal made of copper (Cu).

In the first functional layer, copper (Cu) is 50% or more based on the total weight ratio of the first functional layer, and the remainder is a metal alloy containing one or more of aluminum (Al), silver (Ag), iron (Fe), gold (Au), palladium (Pd), nickel (Ni), tin (Sn), and lead (Pb).

In the present invention, nickel (Ni) or titanium (Ti) is applied to the first bonding layer.

Further, the present invention is characterized by further comprising: a second functional layer which is laminated on the other side surface of the main metal layer and is applied with a metal of a different kind from the main metal layer; and a second bonding layer formed between the second functional layer and the main metal layer, and made of a metal capable of bonding the second functional layer to the main metal layer.

A semiconductor package according to an embodiment of the present invention includes: a lead frame composed of one or more pads and one or more lead terminals; one or more semiconductor chips mounted on the pad; a jig structure body electrically connecting the semiconductor chip and the lead terminal; and a package body capable of protecting the periphery of the semiconductor chip by molding, wherein the jig structure is the jig structure for semiconductor packaging.

In the present invention, when the jig structure is configured, a metal having low cost and light weight is applied to the material of the main metal layer, and a metal having excellent conductivity is applied to the portion of the functional layer laminated on the main metal layer, which realizes electrical connection, thereby achieving the effects of reducing the price and weight of the semiconductor package and having excellent electrical connection characteristics.

In addition, the present invention has an effect that a bonding layer for facilitating bonding between the two metal layers is provided between the main metal layer containing aluminum as a main component and the functional layer containing copper as a main component, and the bonding state of the functional layers can be firmly maintained.

Drawings

Fig. 1 is a view showing a jig structure for semiconductor packaging of the present invention.

Fig. 2 is a diagram showing an example in which the jig structure of the present invention is applied to a semiconductor package.

Fig. 3 is a view showing another embodiment of the jig structure for semiconductor packaging of the present invention.

Description of reference numerals

10: the jig structure 20: lead frame

30: the semiconductor chip 40: packaging part body

100: main metal layer 200: first functional layer

300: first bonding layer 400: second functional layer

500: second bonding layer

Detailed Description

Hereinafter, preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings. In describing the present invention, detailed descriptions thereof will be omitted when it is determined that specific descriptions of related known functions or configurations may unnecessarily obscure the gist of the present invention.

In the semiconductor package of the present invention, a jig structure 10 for electrically connecting structures of packages is characterized in that the jig structure 10 includes: a main metal layer 100 maintaining the shape of the jig structure 10; a first functional layer 200 laminated on one side of the main metal layer 100, and made of a metal different from the main metal layer 100; the first bonding layer 300 is formed between the first functional layer 200 and the primary metal layer 100, and is made of a metal capable of bonding the first functional layer 200 to the primary metal layer 100.

The present invention is characterized in that a low-cost and lightweight metal is applied to the material of the main metal layer 100 that maintains the overall shape, and a metal having excellent conductivity is applied to the electrically connecting portion of the first functional layer 200 to reduce the price and weight of the semiconductor package and improve the electrical connection characteristics.

Therefore, the thickness of the first functional layer 200 is thinner than that of the main metal layer 100. Preferably, the thickness of the main metal layer 100 is formed to be 25 μm (micrometers) to 2mm (millimeters), and the first functional layer 200 is preferably formed to be thinner than the thickness thereof by 0.05 μm (micrometers) to 15 μm (micrometers).

The material of the main metal layer 100 may be formed of a single metal of aluminum (Al), contain most aluminum (Al), and may be formed as a mixture with another metal. That is, aluminum (Al) may be formed of 50% or more based on the total weight ratio of the main metal layer 100, and the remainder may be formed of a metal alloy including one or more of copper (Cu), magnesium (Mg), nickel (Ni), palladium (Pd), silver (Ag), gold (Au), manganese (Mn), zinc (Zn), silicon (Si), chromium (Cr), and titanium (Ti).

In this manner, when the main metal layer 100 is formed of aluminum as a main component, the cost of the jig structure 10 can be reduced and the weight can be reduced as compared with the conventional art in which the jig structure is formed of only a copper material. However, the aluminum-based primary metal layer 100 is difficult to solder due to the characteristics of the material and has poor electrical connection characteristics, and thus has not been applied at all, and the first functional layer 200 according to the present invention solves such problems.

The first functional layer 200 may be formed of a single metal of copper (Cu), contain the most copper, and may be formed as a mixture with another metal. That is, copper (Cu) may be formed of 50% or more based on the total weight ratio of the first functional layer 200, and the remainder may be formed of a metal alloy including one or more of aluminum (Al), silver (Ag), iron (Fe), gold (Au), palladium (Pd), nickel (Ni), tin (Sn), and lead (Pb). The first functional layer 200 may be formed of a single material or 2 or more layers of different materials.

The first bonding layer 300 is a metal layer formed between the first functional layer 200 and the main metal layer 100, and can facilitate bonding of the first functional layer 200 to the main metal layer 100. The first functional layer 200 mainly composed of copper and the main metal layer 100 mainly composed of aluminum cannot be bonded due to the characteristics of the material, and therefore the first bonding layer 300 needs to be formed.

The first bonding layer 300 is preferably made of nickel (Ni) or titanium (Ti), and is preferably thinner than the first functional layer 200. The thickness of the first bonding layer 300 is preferably 0.01 to 4 μm (micrometers).

If the first functional layer 200 is made of a single metal such as nickel, instead of copper as a main component, there is no problem in forming the first functional layer 200 even if an additional bonding layer is not present, but in the case where the first functional layer 200 is made of a metal such as nickel alone, there is a problem in that the nickel layer is peeled off when the package body 40 is formed by EMC molding in the next step.

In a preferred first embodiment of the material constituting the jig structure 10 of the present invention, aluminum is used as the main metal layer 100, copper is used as the first functional layer 200, and nickel is used as the first bonding layer 300. In the second preferred embodiment, aluminum is used for the main metal layer 100, copper is used for the first functional layer 200, and titanium is used for the first bonding layer 300.

The jig structure 10 thus formed is applicable to a semiconductor package including, as shown in fig. 2: a lead frame 20 composed of a pad and a plurality of lead terminals; one or more semiconductor chips 30 mounted on the pad; a jig structure body for electrically connecting the semiconductor chip 30 and the lead terminals; and a package body 40 for protecting the periphery of the semiconductor chip 30 by molding. The above-described structure is an example of a jig structure to which the present invention is applied, and is applicable to various types of package structures.

Further, since the conventional jig structure 10 is made of copper, there is a problem in that silver (Ag) plating or gold (Au) plating must be added to the bonding portion only in order to bond the bonding wire to the upper portion of the jig structure 10, but the present invention has an advantage in that the bonding of the bonding wire (B-W) is easily achieved without additional silver/gold plating because the main metal layer 100 is formed of aluminum.

Fig. 3 shows another embodiment of the present invention, which is characterized by further comprising: a second functional layer 400 laminated on the other side surface of the main metal layer 100, and to which a different kind of metal from the main metal layer 100 is applied; the second bonding layer 500 is formed between the second functional layer 400 and the primary metal layer 100, and a metal capable of bonding the second functional layer 400 to the primary metal layer 100 is applied.

The above embodiment is an embodiment in which the second functional layer 400 is further included on the opposite side of the first functional layer 200, and is an embodiment applied when another package structure is connected to the upper portion of the primary metal layer 100. The second functional layer 400 also has the same structural features as the first functional layer 200, and the second functional layer 400 is bonded to the primary metal layer 100 through the second bonding layer 500.

That is, the second functional layer 400 may be formed of a single metal of copper (Cu) or copper (Cu) as a main component, and may be formed as a mixture with other metals, and nickel (Ni) or titanium (Ti) may be applied to the second bonding layer 500. The second functional layer 400 may be formed of a single material or 2 or more layers of different materials.

Since the structural features of the second functional layer 400 and the second bonding layer 500 are the same as those of the first functional layer 200 and the first bonding layer 300, the functional description and the repetitive description of the applicable materials will be omitted.

The present invention is described as being applied to the clip structure 10 having a remarkable structural effect, but the structures of the main metal layer 100, the first functional layer 200, and the first bonding layer 300 of the present invention may be applied to a lead frame made of only a conventional copper material.

The present invention has been described above with reference to the above embodiments, and it is apparent that various modifications can be made within the scope of the technical idea of the present invention.