阅读说明：本技术 引线框 (Lead frame ) 是由 菱木薰 大泷启一 佐佐木英彦 留冈浩太郎 于 2020-02-26 设计创作，主要内容包括：课题在于提供一种引线框,其为在引线框基材的上表面、侧面、下表面中在减少成本、操作时间、提高生产率的同时在侧面实施了银镀覆作为最表层的电镀的引线框,能够将包括银镀层的镀层整体的厚度抑制为较薄,而且使得与密封树脂的密合性显著提高。解决手段为在由铜系材料构成的引线框基材(10)的上表面、侧面、下表面中,在上表面和下表面具备镍、钯、金依次层叠而成的镀层(12、13),同时,在侧面具备具有针状的突起组的粗糙化银镀层(11)作为最表层镀层,粗糙化银镀层具有在晶体取向<001>、<111>、<101>各自的比率中晶体取向<101>的比率最高的晶体结构。(The problem is to provide a lead frame, which is a lead frame of an upper surface, a side surface and a lower surface of a lead frame base material, reduces cost, operation time and improves productivity, and simultaneously carries out silver plating as electroplating of an outermost layer on the side surface, and can restrain the thickness of the whole plating layer comprising the silver plating layer to be thin and remarkably improve the adhesion with sealing resin. The upper surface, the side surface and the lower surface of a lead frame base material (10) made of a copper material are provided with plating layers (12, 13) formed by sequentially laminating nickel, palladium and gold on the upper surface and the lower surface, and the side surface is provided with a roughened silver plating layer (11) with needle-shaped protrusion groups as an outermost plating layer, wherein the roughened silver plating layer has a crystal structure with the highest ratio of crystal orientation <101> in the ratios of crystal orientations <001>, <111> and <101 >.)

1. A lead frame is characterized in that a lead frame base material composed of a copper-based material has plating layers formed by sequentially laminating nickel, palladium and gold on the upper surface and the lower surface of the upper surface, the side surface and the lower surface, and the side surface is provided with a roughened silver plating layer having needle-shaped protrusion groups as an outermost plating layer, wherein the roughened silver plating layer has a crystal structure with the highest ratio of crystal orientation <101> in the ratios of crystal orientations <001>, <111> and <101 >.

2. The lead frame of claim 1, wherein the roughened silver plating has an average crystal grain size of less than 0.28 μm.

3. The lead frame according to claim 1 or 2, wherein a base plating is provided between the lead frame substrate and the roughened silver plating.

Technical Field

The present invention relates to a lead frame for a semiconductor, in which silver plating is applied as an outermost plating layer to the upper surface, side surface, and lower surface of a lead frame base.

Background

The lead frame is one of the semiconductor element mounting members. Conventionally, a lead frame plated with silver as an outermost plating layer on the entire surface or a part of a lead frame base material has been used in many cases, but the adhesion between silver or an alloy containing silver and a sealing resin is poor, and the lead frame and the sealing resin are easily peeled off by impact or heat, which causes a problem in reliability.

For this problem, the following methods are known: the surface of the lead frame base material is roughened by microetching treatment to form irregularities, thereby producing a physical anchoring effect and improving adhesion to the sealing resin.

However, lead frame substrates used in large quantities in the manufacture of lead frames are made of copper alloys containing silicon, and an impurity residue called smear (Smut) is generated by microetching treatment. Therefore, it is impossible to use a method of roughening the surface of the lead frame base material made of a copper alloy by microetching.

In addition, in the case of a lead frame using a lead frame base material made of a copper alloy, in order to ensure good bondability with a metal wire used in bonding a semiconductor element, it is necessary to minimize the influence of diffusion of copper present in the lead frame base material made of a copper alloy of the base. Therefore, when a plating layer made of a noble metal such as silver or a silver-containing alloy or a noble metal alloy is directly formed on a lead frame base made of a copper alloy without providing an undercoat plating layer, it is generally necessary to make the thickness of the plating layer made of the noble metal or the noble metal alloy 2 μm or more.

On the other hand, in recent years, for the purpose of downsizing and cost reduction, high-density mounting with a small size and a thin thickness is required for a semiconductor package. In order to reduce the size, the thickness of the plating layer is required to be thinner, and from the viewpoint of cost reduction, the thickness of the plating layer made of a noble metal or a noble metal alloy is also required to be thinner.

In a lead frame using a lead frame base material made of a copper alloy, as one of measures for reducing the thickness of a plating layer made of a noble metal or a noble metal alloy, there is a method of: the base plating layer, which is a plating layer made of a noble metal or a noble metal alloy, is formed of nickel or an alloy containing nickel, which has an effect of suppressing the diffusion of copper, so that the thickness of the plating layer made of a noble metal or a noble metal alloy is made thin.

However, even if the thickness of the plating layer made of a noble metal or a noble metal alloy is made thin, the adhesion to the resin cannot be improved.

As a prior art relating to these problems, patent document 1 discloses the following technique for a base plating layer of a plating layer made of a noble metal or a noble metal alloy: a dense and flat nickel plating layer is formed on the entire surface of a copper alloy, and a nickel plating layer having a higher priority for crystal growth in the longitudinal direction than for crystal growth in the transverse direction is formed thereon, so that the surface has irregularities, thereby producing a physical anchoring effect and improving adhesion to a sealing resin.

Patent document 2 discloses the following technique for the base plating of the plating layer made of a noble metal or a noble metal alloy: after the mountain-shaped nickel plating layer is formed on the copper alloy, the nickel plating layer with good leveling property is formed on the copper alloy, so that the concave-convex shape is in a hemispherical shape, thereby improving the adhesion with the sealing resin and preventing the epoxy resin component from seeping out.

Patent document 3 discloses a technique of forming a noble metal plating layer composed of a gold layer and a silver layer on a nickel layer having a rough surface.

Disclosure of Invention

Problems to be solved by the invention

The techniques of these patent documents are the following: in order to improve adhesion to a resin, a base plating layer is formed so that the surface thereof becomes a roughened surface, and a noble metal plating layer is laminated thereon so as to follow the shape of the roughened surface. However, in order to form the roughened surface on the surface of the base plating layer into a surface having irregularities capable of improving adhesion to the resin even when the noble metal plating layer is laminated, it is necessary to form the base plating layer thick, and the plating speed is slow to form the base plating layer into the roughened surface, so that the working time increases, the cost increases, and the productivity decreases.

In addition, as another means for improving the adhesion to the resin, it is conceivable to form a smooth noble metal plating layer on the surface of the lead frame base material and then roughen the surface of the noble metal plating layer, but in order to form the surface of the noble metal plating layer into a roughened surface having a concavo-convex shape capable of improving the adhesion to the resin, it is necessary to form the smooth noble metal plating layer before forming the roughened surface thick, and therefore the cost of the noble metal plating layer increases and the productivity decreases.

Further, if the surface is roughened after the smooth plating layer is formed, the plating metal removed at the time of roughening is wasted.

However, as a result of trial and error, the present inventors have found that there is still room for: as compared with the techniques disclosed in the above patent documents, the cost and the working time for forming the roughened surface on the surface can be reduced, the productivity can be improved, and the thickness of the entire plating layer can be controlled to be small, and the adhesion to the sealing resin can be remarkably improved.

The present invention has been made in view of the above problems, and an object of the present invention is to provide a lead frame in which silver plating is applied to a side surface of an upper surface, a side surface, and a lower surface of a lead frame base as an outermost layer plating, which can reduce cost and operation time, improve productivity, reduce the thickness of the entire plating layer including the silver plating layer to be thin, and significantly improve adhesion to a sealing resin.

Means for solving the problems

In order to solve the above problem, a lead frame according to the present invention includes: the upper surface, the side surface and the lower surface of a lead frame base material made of a copper-based material are provided with plating layers formed by sequentially laminating nickel, palladium and gold on the upper surface and the lower surface, and the side surface is provided with a roughened silver plating layer having needle-shaped protrusion groups as an outermost layer plating layer, wherein the roughened silver plating layer has a crystal structure with the highest ratio of crystal orientation <101> in the ratios of crystal orientations <001>, <111> and <101 >.

Further, in the lead frame of the present invention, it is preferable that the average crystal grain size of the roughened silver plating layer is less than 0.28 μm.

In the lead frame of the present invention, it is preferable that the base plating layer is provided between the lead frame base material and the roughened silver plating layer.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, a lead frame in which silver plating is applied as the outermost plating layer on the side surface of the upper surface, the side surface, and the lower surface of the lead frame base material can be obtained, which can reduce the cost and the working time, improve the productivity, and suppress the thickness of the entire plating layer including the silver plating layer to be thin, and significantly improve the adhesion to the sealing resin.

Drawings

Fig. 1 is a diagram showing an example of a lead frame according to embodiment 1 of the present invention, in which (a) is a top view, (b) is a bottom view, and (c) is an explanatory diagram schematically showing a cross section a-a of (a).

Fig. 2 is a plan view showing an example of a lead frame arranged in a plurality of rows according to embodiment 1 of the present invention.

Fig. 3 is an explanatory view showing an example of a manufacturing process of a lead frame for mounting a semiconductor element according to embodiment 1 of the present invention and another example.

Fig. 4 is an explanatory view showing an example of a manufacturing process of a semiconductor package using the lead frame for mounting a semiconductor element according to embodiment 1 of the present invention and another example.

Fig. 5 is a diagram showing an example of a lead frame according to embodiment 2 of the present invention, in which (a) is a top view, (B) is a bottom view, and (c) is an explanatory diagram schematically showing a B-B cross section of (a).

Fig. 6 is a plan view showing an example of a lead frame arranged in a plurality of rows according to embodiment 2 of the present invention.

Fig. 7 is an explanatory view showing an example of a manufacturing process of a lead frame for mounting a semiconductor element according to embodiment 2 of the present invention and another example.

Fig. 8 is an explanatory view showing an example of a manufacturing process of a semiconductor package using the lead frame for mounting a semiconductor element according to embodiment 2 of the present invention.

Description of the symbols

1-a lead frame; 2-semiconductor packaging; 10-lead frame substrate (metal plate); 10 a-terminal part for internal connection; 10 b-terminal part for external connection; 10 c-a pad portion; 11-roughening silver plating; 12-plating for internal connection; 13-plating for external connection; 14-soldering tin; 15-sealing resin; 16-Die Bond paste (Die Bond); 17-a bond wire; 20-a semiconductor element; 31-1 st plating resist mask; 32-resist mask for etching (and also for electroplating); r1-resist layer 1; r2-resist layer 2.

Detailed Description

Before describing the embodiments, the process of the present invention and the operational effects of the present invention will be described.

The present inventors considered that, in order to reduce the cost and the working time for forming the roughened surface on the surface, improve productivity, improve adhesion to the sealing resin, and reduce the thickness of the entire plating layer, the following measures must be taken: for the lead frame base material, the surface-roughened base plating layer is not provided, and the surface-roughened silver plating layer is formed without roughening the smooth silver plating layer surface, or the base plating layer is smoothly formed, on which the surface-roughened silver plating layer is formed without roughening the smooth silver plating layer surface.

In the course of the trial and error, the present inventors have derived a lead frame in which a roughened silver plating layer having needle-like projection groups is provided on the side surface of the upper surface, the side surface, and the lower surface of a lead frame base material made of a copper-based material as an outermost plating layer, and the surface of the roughened silver plating layer is not roughened with respect to the surface of a smooth silver plating layer.

In the present application, the group of needle-like protrusions of the roughened silver plating layer refers to an aggregate of a plurality of needle-like protrusions having a surface area ratio (here, a ratio of the surface area of the roughened silver plating layer to the surface area of the smooth surface) of 1.30 to 6.00.

It was found that if the roughened silver plating layer is formed in the form of a group of needle-like projections having such a surface area ratio, the sealing resin easily flows into the base of each needle-like projection, and the physical anchoring effect due to the increase in contact area and the uneven shape at the time of curing the sealing resin can be exhibited.

Further, the present inventors have conducted experiments repeatedly and found that the roughened silver plating layer having needle-like projection groups is different from the conventional smooth silver plating layer and the roughened silver plating layer having a roughened surface formed by roughening the surface of the smooth silver plating layer in crystal structure, and is formed by growing a crystal structure in which a ratio of a predetermined crystal orientation is increased, and that the roughened surface having needle-like projection groups formed by greatly growing the crystal structure has an effect of remarkably improving adhesion to a sealing resin as compared with the roughened surface formed by the conventional technique, and have led to the present invention.

The lead frame of the invention is provided with plating layers formed by sequentially laminating nickel, palladium and gold on the upper surface and the lower surface of the upper surface, the side surface and the lower surface of a lead frame base material made of a copper material, and is also provided with a roughened silver plating layer with needle-shaped protrusion groups on the side surface as an outermost layer plating layer, wherein the roughened silver plating layer has a crystal structure with the highest ratio of crystal orientation <101> in the ratios of crystal orientations <001>, <111>, <101 >.

If the roughened silver plating has a group of needle-like projections having a surface area ratio (here, the ratio of the surface area of the roughened silver plating to the surface area of the smooth surface) of 1.30 to 6.00 as in the lead frame of the present invention, the sealing resin easily flows into the base of each needle-like projection. Therefore, the physical anchoring effect due to the increase in contact area and the uneven shape at the time of curing the sealing resin can be exhibited, and good adhesion can be obtained. The extending direction of each needle-like projection in the needle-like projection group is not the same, and includes not only the upward direction and the oblique direction but also the curved needle shape. If the needle-like projections in the needle-like projection group are in a form extending randomly in a radial direction, the anchoring effect to the sealing resin can be further improved.

Further, if the roughened silver plating layer having a needle-like projection group provided as an outermost plating layer on the side surface of the lead frame base material made of a copper-based material is configured to have a crystal structure having the highest ratio of the crystal orientation <101> among the ratios of the crystal orientations <001>, <111>, <101>, as in the lead frame of the present invention, the sealing resin can more easily enter into the deep portion of the roughened silver plating layer than the conventional crystal structure having a highest ratio of the crystal orientation <101> among the ratios of the crystal orientations <001>, <111>, <101> than the silver plating layer having a roughened surface formed by roughening the surface of the smooth silver plating layer, for example, the silver plating layer having a roughened surface having a surface area ratio of less than 1.30 (here, the ratio of the surface area of the silver plating layer to the surface area of the smooth surface), the adhesion to the sealing resin is further improved.

In the lead frame of the present invention, the roughened silver plating layer having a crystal structure in which the ratio of the crystal orientation <101> is the highest among the ratios of the crystal orientations <001>, <111>, <101>, and having needle-like projection groups may be formed using the lead frame base material as a base.

Further, if a lead frame of the present invention is manufactured, the adhesion to the sealing resin can be significantly improved by the roughened silver plating layer having a crystal structure with the highest ratio of the crystal orientation <101> among the ratios of the crystal orientations <001>, <111>, <101> and having needle-like projection groups, and as a result, when it is necessary to form a barrier plating layer for suppressing the diffusion of copper which is a base material of the lead frame in a high-temperature environment as the base plating layer, it is sufficient to form the barrier plating layer to be thin and smoothly in a thickness for suppressing the diffusion of copper which is a base, and it is not necessary to form the barrier plating layer with a roughened surface.

Further, the roughened silver plating layer having a crystal structure in which the ratio of the crystal orientation <101> is the highest among the ratios of the crystal orientations <001>, <111>, <101>, and having needle-like projection groups can be formed by silver plating under the conditions described later without roughening the smooth silver plating surface.

Therefore, if a lead frame of the present invention is manufactured, the cost for forming the roughened surface for improving adhesion to the resin can be minimized, and the thickness of the entire plating layer can be minimized.

Further, it is preferable that in the lead frame of the present invention, the average crystal grain size of the roughened silver plating layer is less than 0.28 μm.

If the average crystal grain size of the roughened silver plating layer is 0.28 μm or more, the spacing between crystals becomes wider when the crystals of the silver plating layer grow in the height direction, and a surface area ratio (here, a ratio of the surface area of the roughened silver plating layer to the surface area of the smooth surface) of 1.30 to 6.00 cannot be obtained.

If the average crystal grain size of the roughened silver plating is made smaller than 0.28. mu.m, the spacing between crystals becomes narrow when the crystals of the silver plating grow in the height direction, resulting in a surface area ratio (here, the ratio of the surface area of the roughened silver plating to the surface area of the smooth surface) of 1.30 to 6.00. More preferably, the average crystal grain size of the roughened silver plating layer is 0.15 μm or more and 0.25 μm or less.

In the lead frame of the present invention, the base plating layer may be provided between the lead frame base material and the roughened silver plating layer.

In the lead frame of the present invention, the shape of the needle-like projection group of the roughened silver plating layer preferably does not affect the surface morphology of the base, and is formed only by the roughened silver plating layer, and the surface state of the base may be smooth or rough. In view of the cost such as productivity, it is preferable that the base is a surface of the lead frame base material only which is subjected to an activation treatment to form the roughened silver plating thereon. In consideration of the influence of diffusion of copper, which is a material of the base lead frame base material, in a high-temperature environment, a smooth base plating layer may be provided as a barrier plating layer between the lead frame base material and the roughened silver plating layer. In this case, it is sufficient to form the plating layer to be thin and smooth to a thickness that suppresses diffusion of copper in the base, and therefore a thin base plating layer is preferable.

In the lead frame of the present invention, when the silver plating layer including the roughened silver plating layer is directly formed on the side surface of the lead frame base material without providing the base plating layer, the thickness of the entire plating layer provided on the side surface of the lead frame base material is preferably 0.4 μm or more and 6.0 μm or less. Specifically, it is preferable that a roughened silver plating layer having needle-like projection groups on the surface thereof is formed on the surface of the side surface of the lead frame base material in a range of 0.2 to 3.0 μm, more preferably 1.5 μm, and a roughened silver plating layer having needle-like projection groups on the surface thereof in a range of 0.2 to 3.0 μm, more preferably 0.5 μm is formed thereon.

When a nickel plating layer is provided as a barrier plating layer on the base, for example, the thickness of the nickel plating layer provided on the side surface of the lead frame base is preferably 0.3 μm or more and 3.0 μm or less. Specifically, it is preferable to form a nickel plating layer of 0.3 μm to 3.0 μm, preferably 1.0 μm, on the surface of the side surface of the lead frame substrate, and to laminate a roughened silver plating layer of 0.2 μm to 3.0 μm, preferably 0.5 μm, having needle-like projection groups on the surface.

In the case where, for example, a palladium plating layer is provided between the base nickel plating layer and the roughened silver plating layer, the thickness of the palladium plating layer is preferably 0.005 μm or more and 0.1 μm or less. Specifically, it is preferable to form a palladium plating layer of 0.005 μm to 0.1 μm, preferably 0.01 μm, on the nickel plating layer formed on the surface of the side surface of the lead frame base material.

When a gold plating layer is provided between the base nickel plating layer and the palladium plating layer and the roughened silver plating layer, for example, the thickness of the gold plating layer is preferably 0.0005 μm or more and 0.01 μm or less. Specifically, it is preferable to form a gold plating layer of 0.0005 μm to 0.01 μm, preferably 0.001 μm, on the nickel plating layer and the palladium plating layer formed on the surface of the side surface of the lead frame base.

The lead frame of the present invention has a crystal orientation<001>、<111>、<101>Crystal orientation in respective ratio<101>The roughened silver plating layer having a needle-like projection group with the highest ratio of (A) can be formed at a temperature of 55 ℃ to 65 ℃ and a current density of 3A/dm by using a silver plating bath having a silver concentration of 1.0g/L to 10g/L, the silver plating bath being composed of a methane sulfonic acid-based silver plating solution²Above 20A/dm²Electroplating for 5-60 seconds.

Therefore, according to the lead frame of the present invention, it is possible to obtain a lead frame in which silver plating is applied to the side surface of the upper surface, the side surface, and the lower surface of the lead frame base as the outermost plating layer, and it is possible to reduce the cost for forming the roughened surface of the surface, the operation time, and the productivity, and to suppress the thickness of the entire plating layer including the silver plating layer to be thin, and to remarkably improve the adhesion to the sealing resin.

The following describes a lead frame to which the present invention is applied and a method for manufacturing the same. It is to be understood that, unless otherwise specified, the present invention is not limited by the following detailed description.

Embodiment 1

Fig. 1 is a diagram showing an example of a lead frame according to embodiment 1 of the present invention, in which (a) is a top view, (b) is a bottom view, and (c) is an explanatory diagram schematically showing a cross section a-a of (a). Fig. 2 is a plan view showing an example of a lead frame arranged in a plurality of rows according to embodiment 1 of the present invention. Fig. 3 is an explanatory view showing an example of a manufacturing process of a lead frame for mounting a semiconductor element according to embodiment 1 of the present invention and another example. Fig. 4 is an explanatory view showing an example of a manufacturing process of a semiconductor package using the lead frame for mounting a semiconductor element according to embodiment 1 of the present invention and another example.

As shown in fig. 1 (a), the lead frame 1 of the present embodiment includes a plurality of terminals extending from four sides to a region where semiconductor elements are mounted, and as shown in fig. 1 (c), the lead frame base 10 made of a copper-based material includes a roughened silver plating layer 11 as an outermost plating layer on a side surface among an upper surface, a side surface, and a lower surface. In fig. 1, reference numeral 10a denotes an internal connection terminal portion electrically connected to the semiconductor element, and 10b denotes an external connection terminal portion.

The roughened silver plating layer 11 has a needle-like projection group having a surface area ratio (here, a ratio of the surface area of the roughened silver plating layer to the surface area of the smooth surface) of 1.30 to 6.00.

The roughened silver plating layer 11 has a crystal structure in which the ratio of the crystal orientation <101> is the highest among the ratios of the crystal orientations <001>, <111>, and <101 >.

The average crystal grain size of the roughened silver plating layer 11 has a size of less than 0.28 μm.

In the present embodiment, the roughened silver plating layer 11 is formed to have a thickness of 0.2 μm to 3.0 μm, using the lead frame base material 10 made of a copper-based material as a base.

As a modification of the present embodiment, the lead frame base material 10 made of a copper-based material and the roughened silver plating layer 11 may be provided with a base plating layer that functions as a barrier plating layer that prevents diffusion of copper at high temperatures. The base plating layer in this case may be formed by any of nickel plating, nickel/palladium plating, and nickel/palladium/gold plating. In this case, the roughened silver plating layer 11 may be formed to have a thickness of 0.2 μm or more and 3.0 μm or less.

Specifically, for example, when the base plating layer functions as a barrier plating layer for preventing diffusion of copper when the base plating layer is electrically connected to the semiconductor element by solder, and when the base plating layer is formed of a plating layer formed by nickel/palladium plating or a plating layer formed by nickel/palladium/gold plating, the roughened silver plating layer 11 may be formed to have a thickness of 0.2 μm or more and 3.0 μm or less.

The lead frame 1 of the present embodiment includes an internal connection plating layer 12 on the upper surface of the lead frame base 10 at a portion corresponding to the internal connection terminal portion 10a, and an external connection plating layer 13 on the lower surface of the lead frame base 10.

The internal connection plating layer 12 and the external connection plating layer 13 are each formed by sequentially laminating nickel, palladium, and gold.

In the lead frame 1 of the present embodiment, as shown in fig. 2, a plurality of lead frames 1 are arranged in a row.

Next, an example of a manufacturing process of the lead frame 1 according to the present embodiment and other examples will be described with reference to fig. 3.

First, a metal plate 10 made of a copper-based material is prepared as a lead frame base material (see fig. 3 (a)).

Next, resist layers R1 are formed on both surfaces of the metal plate 10 (see fig. 3 (b)).

Next, the 1 st resist layer R1 on the upper surface side of the metal plate 10 is exposed and developed using a glass mask drawn in a predetermined shape corresponding to the internal connection terminal portion 10a, and the 1 st resist layer R1 on the lower surface side of the metal plate 10 is exposed and developed using a glass mask drawn in a predetermined shape corresponding to the external connection terminal portion 10b, whereby the 1 st plating resist mask 31-1 is formed which is opened at a portion corresponding to the internal connection terminal portion 10a on the upper surface side of the metal plate 10 and is opened at a portion corresponding to the external connection terminal portion 10b on the lower surface side of the metal plate 10 (see (c) of fig. 3).

Next, using the 1 st plating resist mask 31-1, a nickel plating layer having a thickness of 0.3 to 3 μm, a palladium plating layer having a thickness of 0.005 to 0.1 μm, and a gold plating layer having a thickness of 0.0005 to 0.1 μm are sequentially stacked on the upper surface of the metal plate 10 at the portion corresponding to the internal connection terminal portion 10a and the lower surface at the portion corresponding to the external connection terminal portion 10b, respectively, to form an internal connection plating layer 12 and an external connection plating layer 13 (see fig. 3 (d)).

Next, the 1 st plating resist mask 31-1 is removed (see fig. 3 (e)), and the 2 nd resist layers R2 are formed on both surfaces of the metal plate 10 (see fig. 3 (f)).

Next, exposure and development are performed using a glass mask in which a predetermined lead frame shape is drawn, thereby forming an etching resist mask 32 (see fig. 3 (g)).

Next, etching is performed on both surfaces to form a predetermined lead frame shape (see fig. 3 (h)).

Next, the roughened silver plating layer 11 having needle-like projection groups is formed as an outermost plating layer on the side surface of the metal plate 10 using the etching resist masks 32 on both surfaces of the metal plate 10 as a second plating resist mask (see fig. 3 (i)).

Next, the resist mask 32 is removed (see fig. 3 (j)).

Thereby, the lead frame 1 of the present embodiment is completed.

The lead frame 1 manufactured by the steps shown in fig. 3 (a) to 3 (j) is formed with the roughened silver plating layer 11 having the needle-like projection groups only on the side surface of the lead frame base 10, but the lead frame 1 of the present embodiment may be formed on the side surface of the lead frame base 10, or may be formed on the upper surface of the lead frame base 10 at a position other than the internal connection terminal portions 10 a.

Such a lead frame 1 can be manufactured by the following steps.

The manufacturing steps are the same as those described above from the preparation of the metal plate 10 (see fig. 3 a) to before the formation of the 2 nd resist layers R2 on both surfaces of the metal plate 10 (see fig. 3 f).

Then, of the glass masks on both sides on which the predetermined lead frame shape is drawn, as the glass mask on the upper surface side of the metal plate 10, a glass mask is used in which a portion of the upper surface of the lead frame base 10 corresponding to a portion other than the internal connection terminal portion 10a is drawn so that the concentration of the light shielding material covering the portion corresponding to the internal connection terminal portion 10a is higher than the concentration of the light shielding material covering the portion corresponding to the external connection terminal portion 10b, and as the glass mask on the lower surface side of the metal plate 10, a glass mask is used in which a portion of the upper surface of the lead frame base 10 corresponding to the internal connection terminal portion 10a is drawn so that the concentration of the light shielding material covering the portion is equal to the concentration of the light shielding material covering the portion corresponding to the internal connection terminal portion 10a in the glass mask on the upper surface side of the metal plate 10, the resist mask 32 for etching is formed by exposure and development (see fig. 3 (g)). At this time, the etching resist mask 32 formed on the upper surface of the metal plate 10 has a portion of the upper surface of the lead frame base material 10 corresponding to a portion other than the internal connection terminal portion 10a, which is exposed to a lower light amount than a portion corresponding to the internal connection terminal portion 10a, and has quick stripping properties with respect to a resist stripping liquid.

Next, etching is performed on both surfaces to form a predetermined lead frame shape (see fig. 3 (h)).

Next, of the etching resist masks 32 on both surfaces of the metal plate 10, the portions of the etching resist mask 32 on the upper surface side corresponding to the portions of the upper surface of the lead frame base material 10 other than the internal connection terminal portions 10a are removed, and the portions corresponding to the internal connection terminal portions 10a and the etching resist mask 32 on the lower surface side are left unremoved (see (h2) of fig. 3).

Next, using the etching resist masks 32 on both surfaces of the metal plate 10 as the second plating resist mask, the roughened silver plating layer 11 having needle-like projection groups is formed as the outermost plating layer on the upper surface of the metal plate 10 except for the internal connection terminal portions 10a on the upper surface of the lead frame base 10 and on the side surfaces thereof (see (i') of fig. 3).

Next, the resist mask 32 is removed (see (j') of fig. 3).

Thus, the following lead frame 1 of another example of the present embodiment is completed: the roughened silver plating layer 11 having the needle-like projection groups is formed not only on the side surfaces of the lead frame base material 10 but also on the upper surface of the lead frame base material 10 except for the internal connection terminal portions 10 a.

The step of forming the roughened silver plating 11 having the needle-like projection groups as the outermost plating layer is, for example, a step of forming the roughened silver plating by activating only the surface of the lead frame base material 10, or a step of forming a nickel plating layer as a barrier plating layer to a thickness capable of suppressing diffusion of copper in the base, for example, to be thin and smooth, and forming the roughened silver plating 11 thereon. At this time, in the case where the adhesion of the roughened silver plating layer 11 is concerned, for example, a silver strike plating layer may be formed immediately before the roughened silver plating, and the roughened silver plating layer 11 may be formed thereon.

In this case, in order to form the roughened silver plating layer 11 having a crystal structure in which the ratio of the crystal orientation <101> is the highest among the ratios of the crystal orientations <001>, <111>, <101>, and having a needle-like projection group with a surface area ratio (here, the ratio of the surface area of the roughened silver plating layer to the surface area of the smooth surface) of 1.30 to 6.00, the silver concentration in the silver plating bath composed of the methanesulfonic acid-based silver plating solution is set to a range of 1.0g/L to 10 g/L. In particular, the silver concentration is more preferably in the range of 1.5g/L to 5.0 g/L.

If the silver concentration is less than 1.0g/L, a sufficient roughened silver plating film cannot be formed, and therefore, it is not preferable. If the silver concentration is higher than 10g/L, the formed roughened silver plating film will form a smooth surface, and needle-like crystals of silver will not be obtained, which is not preferable.

Further, by using a plating layer of palladium or a palladium-containing alloy as a substitute for the silver strike plating layer used for improving the bondability of the substrate to the roughened silver plating layer 11, the substrate can be suitably bonded to the roughened silver plating layer 11.

Further, a plating layer of gold or an alloy containing gold may be formed under the roughened silver plating layer 11.

In the case where the base plating layer is not provided but is formed directly on the lead frame base material, the thickness of the roughened silver plating layer 11 must be 0.2 μm or more, and may be 0.2 μm or more and 3.0 μm or less. From the viewpoint of cost, it is more preferably 0.3 μm or more and 1.0 μm or less.

When the base plating layer is a plating layer formed by nickel/palladium plating or a plating layer formed by nickel/palladium/gold plating, the thickness of the roughened silver plating layer 11 may be 0.2 μm or more and 3.0 μm or less.

Next, an example of a manufacturing process of a semiconductor package using the lead frame 1 of the present embodiment will be described with reference to fig. 4.

First, the lead frame 1 according to the present embodiment manufactured by the manufacturing steps shown in fig. 3a to 3 j is prepared (see fig. 4 a).

Next, solder 14 is printed on the internal connection terminal portion 10a on the upper surface of the lead frame 1, and the semiconductor element 20 is mounted thereon and fixed, whereby the electrode of the semiconductor element 20 is electrically connected to the internal connection terminal portion 10a of the lead frame 1 (see fig. 4 (b)).

Next, the space region of the lower surface of the lead frame 1 other than the external connection terminal portions 10b is sealed with a sealing resin 15 using a mold (see fig. 4 c).

Finally, the semiconductor packages arranged in a plurality of rows are singulated by dicing, pressing, or the like (see fig. 4 (d)).

Thus, a semiconductor package 2 using the lead frame 1 of the present embodiment is obtained (see fig. 4 (e)).

The semiconductor package 2 using the lead frame 1 of the other example of the present embodiment manufactured by the manufacturing steps shown in fig. 3 (a) to 3 (h), 3 (h2), 3 (i '), and 3 (j') is also obtained by substantially the same steps as described above (see fig. 4 (a ') to 4 (e')).

Embodiment 2

Fig. 5 is a diagram showing an example of a lead frame according to embodiment 2 of the present invention, in which (a) is a top view, (B) is a bottom view, and (c) is an explanatory diagram schematically showing a B-B cross section of (a). Fig. 6 is a plan view showing an example of a lead frame arranged in a plurality of rows according to embodiment 2 of the present invention. Fig. 7 is an explanatory view showing an example of a manufacturing process of a lead frame for mounting a semiconductor element according to embodiment 2 of the present invention and another example. Fig. 8 is an explanatory view showing an example of a manufacturing process of a semiconductor package using the lead frame for mounting a semiconductor element according to embodiment 2 of the present invention.

As shown in fig. 5 (a), the lead frame 1' of the present embodiment includes a pad portion 10c on which a semiconductor element is mounted and a plurality of terminals extending from four surfaces toward the pad portion 10c, and as shown in fig. 5 (c), the lead frame base 10 made of a copper-based material includes a roughened silver plating layer 11 on a side surface as an outermost plating layer among an upper surface, a side surface, and a lower surface. In fig. 5, reference numeral 10a denotes an internal connection terminal portion electrically connected to the semiconductor element, and 10b denotes an external connection terminal portion.

The roughened silver plating layer 11 has a needle-like projection group having a surface area ratio (here, a ratio of the surface area of the roughened silver plating layer to the surface area of the smooth surface) of 1.30 to 6.00.

The roughened silver plating layer 11 has a crystal structure in which the ratio of the crystal orientation <101> is the highest among the ratios of the crystal orientations <001>, <111>, and <101 >.

The average crystal grain size of the roughened silver plating layer 11 has a size of less than 0.28 μm.

In the present embodiment, the roughened silver plating layer 11 is formed to have a thickness of 0.2 μm to 3.0 μm, using the lead frame base material 10 made of a copper-based material as a base.

As a modification of the present embodiment, the lead frame base material 10 made of a copper-based material and the roughened silver plating layer 11 may be provided with a base plating layer that functions as a barrier plating layer that prevents diffusion of copper at high temperatures. The base plating layer in this case may be formed by any of nickel plating, nickel/palladium plating, and nickel/palladium/gold plating. In this case, the roughened silver plating layer 11 may be formed to have a thickness of 0.2 μm or more and 3.0 μm or less.

In detail, for example, the base plating layer functions as a barrier plating layer that prevents diffusion of copper in the case where electrical connection with the semiconductor element is performed by wire bonding, and when the base plating layer is formed of a plating layer including nickel plating, the roughened silver plating layer 11 may be formed to a thickness of 0.2 μm or more and 3.0 μm or less.

Further, for example, in the case where the base plating layer functions as a barrier plating layer that prevents diffusion of copper in the case where electrical connection with the semiconductor element is made by wire bonding, and when the base plating layer is constituted by a plating layer including nickel/palladium plating, the roughened silver plating layer 11 may be formed to a thickness of 0.2 μm or more and 3.0 μm or less.

The lead frame 1' of the present embodiment includes the internal connection plating layer 12 on the upper surface of the lead frame base 10 at a portion corresponding to the internal connection terminal portion 10a, and includes the external connection plating layer 13 on the lower surface of the lead frame base 10.

The internal connection plating layer 12 and the external connection plating layer 13 are each formed by sequentially laminating nickel, palladium, and gold.

In the lead frame 1 'of the present embodiment, as shown in fig. 6, the lead frames 1' are arranged in a plurality of rows.

Next, an example of a manufacturing process of the lead frame 1' of the present embodiment will be described with reference to fig. 7.

The manufacturing process of the lead frame 1 ' of the present embodiment is substantially the same as the manufacturing process of the lead frame 1 of embodiment 1 shown in fig. 3, and the forming step of the roughened silver plating layer 11 having needle-like projection groups as the outermost plating layer is substantially the same as the forming step of the lead frame 1 of embodiment 1 (see fig. 7 (a) to 7 (j), 7 (a) to 7 (h), 7 (h2), 7 (i ') and 7 (j ')).

In the case where the base plating layer is not provided but is formed directly on the lead frame base material, the thickness of the roughened silver plating layer 11 must be 0.2 μm or more, and may be 0.2 μm or more and 3.0 μm or less. From the viewpoint of cost, it is more preferably 0.3 μm or more and 1.0 μm or less.

Further, the base plating layer functions as a barrier against diffusion of copper in the case of electrical connection with the semiconductor element by wire bonding, and when a nickel plating layer is provided as the base plating layer, the thickness of the roughened silver plating layer 11 may be set to 0.2 μm or more and 3.0 μm or less.

Further, the base plating layer functions as a barrier against diffusion of copper in the case where electrical connection with the semiconductor element is made by wire bonding, and in the case where a plating layer including nickel/palladium plating is provided as the base plating layer, the thickness of the roughened silver plating layer 11 may be set to 0.2 μm or more and 3.0 μm or less.

Next, an example of a manufacturing process of a semiconductor package using the lead frame 1' of the present embodiment will be described with reference to fig. 8.

First, a lead frame 1' according to the present embodiment manufactured by the manufacturing steps shown in fig. 7 is prepared (see fig. 8 (a)).

Next, the semiconductor element 20 is mounted and fixed on the pad portion 10c on the upper surface of the lead frame 1 'via a Die Bond 16, and the electrodes of the semiconductor element 20 are electrically connected to the internal connection terminal portions 10a of the lead frame 1' by bonding wires 17 (see fig. 8 (b)).

Next, the space region of the lower surface of the lead frame 1' other than the external connection terminal portions 10b is sealed with a sealing resin 15 using a mold (see fig. 8 c).

Finally, the semiconductor packages arranged in a plurality of rows are singulated by dicing, pressing, or the like (see fig. 8 (d)).

Thus, a semiconductor package 2 'using the lead frame 1' of the present embodiment is obtained (see fig. 8 (e)).

A semiconductor package 2 'using a lead frame 1' of another example of the present embodiment manufactured by the manufacturing steps shown in fig. 7 (a) to 7 (h), 7 (h2), 7 (i '), and 7 (j') is also obtained by substantially the same steps as described above (see fig. 8 (a ') to 8 (e')).