阅读说明：本技术 电子部件模块
(Electronic component module
) 是由 杣田博史
岩本敬 于 2018-06-27 设计创作，主要内容包括：提供一种电子部件模块,在保持贯通布线或布线层与构造体之间的电绝缘性的同时,更加有效地对在电子部件产生的热进行散热。电子部件模块(1)具备电子部件(2)、构造体(3)、贯通布线(4)以及绝缘体(6)。构造体(3)覆盖电子部件(2)的至少一部分,且具有导电性。贯通布线(4)贯穿构造体(3)。绝缘体(6)至少设置在贯通布线(4)与构造体(3)之间。(Provided is an electronic component module which can more effectively dissipate heat generated in an electronic component while maintaining electrical insulation between a through wiring or a wiring layer and a structure. The electronic component module (1) is provided with an electronic component (2), a structure (3), a through-wiring (4), and an insulator (6). The structure (3) covers at least a part of the electronic component (2) and has conductivity. The through wiring (4) penetrates the structure (3). The insulator (6) is provided at least between the through-wiring (4) and the structure (3).)
1. An electronic component module, characterized in that,
the electronic component module includes:
an electronic component;
a structure that covers at least a part of the electronic component and has conductivity;
a through wiring penetrating the structure; and
and an insulator provided at least between the through-wiring and the structure.
2. The electronic component module of claim 1,
the electronic component module further includes a wiring layer for electrically connecting the electronic component and the through wiring.
3. An electronic component module, characterized in that,
the electronic component module includes:
an electronic component;
a structure that covers at least a part of the electronic component and has conductivity;
a through wiring penetrating the structure;
a wiring layer electrically connecting the electronic component and the through wiring; and
and an insulator provided at least between the wiring layer and the structure.
4. The electronic component module according to any one of claims 1 to 3,
the structure is in contact with the electronic component.
5. The electronic component module according to claim 1 or 2,
the insulator includes:
a first insulating portion provided between the structure and the through wiring; and
and a second insulating part provided between the structure and the electronic component.
6. The electronic component module according to claim 3,
the insulator includes:
a third insulating section provided between the structure and the wiring layer; and
and a second insulating part provided between the structure and the electronic component.
7. The electronic component module according to any one of claims 1 to 6,
the structure is formed of a conductive material containing Cu.
8. The electronic component module according to any one of claims 1 to 7,
the structure is formed of a conductor containing a porous metal.
9. The electronic component module of claim 8,
the construct is formed of a conductor comprising the porous metal and a low-elasticity material.
10. The electronic component module according to any one of claims 1 to 9,
the structure is formed of a conductor having low permeability.
11. The electronic component module according to any one of claims 1 to 10,
the insulator is formed of an inorganic insulating material.
12. The electronic component module according to claim 2 or 3,
the electronic component module further includes:
an electrode formed on the wiring layer; and
a resist layer formed on the wiring layer at a position different from the electrode,
the resist layer is formed of a material having lower solder wettability than the electrodes and the wiring layer.
13. The electronic component module according to claim 1, 2 or 5,
the electronic component module further includes:
an external connection wiring layer electrically connected to the through wiring; and
a resist layer formed on the external connection wiring layer,
the resist layer is formed of a material having lower solder wettability than the external connection wiring layer.
Technical Field
The present invention relates generally to an electronic component module, and more particularly, to an electronic component module including an electronic component and a structure.
Background
Conventionally, as an electronic component module, a semiconductor package including a semiconductor chip (electronic component), an insulating resin layer (resin structure), a conductive post (through wiring), a connection terminal, a wiring layer, and a surface layer is known (for example, see patent document 1).
In the semiconductor package described in patent document 1, connection terminals are provided on the upper surface of the semiconductor chip, and the entire semiconductor chip except the bottom surface portion, the connection terminals on the semiconductor chip, the conductive posts, and the wiring layer are covered with an insulating resin layer.
Prior art documents
Patent document
Patent document 1: japanese patent laid-open publication No. 2005-310954
Disclosure of Invention
Problems to be solved by the invention
In the electronic component module described in patent document 1, as described above, the electronic component is covered with the insulating resin layer. Therefore, heat generated in the electronic component is difficult to be released, and heat dissipation is insufficient, which may deteriorate characteristics of the electronic component module.
The present invention has been made in view of the above circumstances, and an object of the present invention is to provide an electronic component module capable of more effectively dissipating heat generated in an electronic component while maintaining electrical insulation between a through-wiring or a wiring layer and a structure.
Means for solving the problems
An electronic component module according to an aspect of the present invention includes an electronic component, a structure, a through-wiring, and an insulator. The structure covers at least a part of the electronic component and has conductivity.
The through-wiring penetrates the structure. The insulator is provided at least between the through-wiring and the structure.
An electronic component module according to an aspect of the present invention includes an electronic component, a structure, a through wiring, a wiring layer, and an insulator. The structure covers at least a part of the electronic component and has conductivity. The through-wiring penetrates the structure. The wiring layer electrically connects the electronic component and the through wiring. The insulator is provided at least between the wiring layer and the structure.
Effects of the invention
According to the electronic component module of the aspect of the present invention, heat generated in the electronic component can be more effectively dissipated while maintaining electrical insulation between the through-wiring or the wiring layer and the structure.
Drawings
Fig. 1 is a sectional view of an electronic component module according to embodiment 1 of the present invention.
Fig. 2 is a sectional view of a communication module including the electronic module.
Fig. 3A to 3F are sectional views for explaining the method of manufacturing the electronic component module.
Fig. 4A to 4E are sectional views for explaining the method of manufacturing the electronic component module.
Fig. 5 is a sectional view of an electronic component module according to embodiment 2 of the present invention.
Fig. 6A to 6F are sectional views for explaining the method of manufacturing the electronic component module.
Fig. 7A to 7E are sectional views for explaining the method of manufacturing the electronic component module.
Detailed Description
Hereinafter, the electronic component modules according to embodiments 1 and 2 will be described with reference to the drawings.
In the electronic component modules according to embodiments 1 and 2 below, the structure having conductivity holds the electronic component so as to cover at least a part of the side surface of the electronic component.
Fig. 1, fig. 2, fig. 3A to fig. 3F, fig. 4A to fig. 4E, fig. 5, fig. 6A to fig. 6F, and fig. 7A to fig. 7E, which are referred to in the following embodiments and the like, are schematic diagrams, and the ratios of the sizes and thicknesses of the respective constituent elements in the diagrams do not necessarily reflect actual dimensional ratios.
(embodiment mode 1)
(1) Integral structure of electronic component module
Hereinafter, an electronic component module 1 according to embodiment 1 will be described with reference to the drawings.
As shown in fig. 1, an electronic component module 1 according to embodiment 1 includes an electronic component 2, a structure 3, a plurality of (two in the illustrated example) through-wirings 4, a plurality of (two in the illustrated example) wiring layers 5, and an insulator 6. In the electronic component module 1, the structure 3 holds the electronic component 2 and the through-wiring 4. In the electronic component module 1, the structure 3 protects the electronic component 2 from external impact, moisture, and the like. The through-wiring 4 is located on the side of the electronic component 2 and penetrates the structure 3 in the thickness direction (predetermined direction) of the structure 3. The wiring layer 5 electrically connects the electronic component 2 and the through wiring 4.
The electronic component module 1 further includes a plurality of (two in the illustrated example) electrodes 7, an external connection wiring layer 8, and a plurality of resist layers 9 and 90. In the electronic component module 1, a plurality of electrodes 7 are provided as electrodes for external connection. The external connection wiring layer 8 is provided to electrically connect the through wiring 4 to the circuit board 10 (see fig. 2). A resist layer 9 is formed on the wiring layer 5. The resist layer 90 is formed on the external connection wiring layer 8.
The electronic component module 1 can be used, for example, as an Interposer (Interposer) interposed between an electronic component 20 (see fig. 2) different from the electronic component 2 and a circuit board 10 (see fig. 2). The circuit board 10 is, for example, a printed wiring board.
(2) Each component of electronic component module
Next, each constituent element of the electronic component module 1 will be described with reference to the drawings.
(2.1) electronic component
As shown in fig. 1, the electronic component 2 has a front surface 21 and a back surface 22 opposite to each other in the first direction D1 of the electronic component module 1. More specifically, the electronic component 2 is formed in a plate shape and has a front surface 21 and a back surface 22 on opposite sides to each other in the thickness direction thereof. In addition, the electronic component 2 has a side surface 23. The shape of the electronic component 2 in plan view (the outer peripheral shape of the electronic component 2 when viewed from the thickness direction of the electronic component 2) is rectangular, but is not limited to rectangular, and may be square, for example.
The electronic component 2 is, for example, a SAW (Surface Acoustic Wave) filter. However, the electronic component 2 is not limited to the SAW filter, and may be an active element such as a BAW (Bulk Acoustic Wave) filter, an RF (radio frequency) switch, or a semiconductor element, or a passive element such as a multilayer ceramic capacitor or a thin film capacitor. The different electronic components 20 are, for example, an IC (Integrated Circuit), an inductor, and a SAW filter. In the communication module 200 (see fig. 2) including the electronic component module 1, a gap 202 (see fig. 2) is formed between the surface 21 of the electronic component 2 as the SAW filter and the different electronic component 20. The electronic component module 1 is electrically connected to the electronic component 20 via the plurality of conductive bumps 43, and is electrically connected to the circuit board 10 via the plurality of conductive bumps 44.
When the electronic component 2 is a SAW filter, for example, the electronic component includes a piezoelectric substrate having a front surface and a back surface on opposite sides to each other in a thickness direction, and a functional portion formed on the front surface of the piezoelectric substrate. The piezoelectric substrate being, for example, LiTaO3Substrate or LiNbO3A substrate. The thickness of the piezoelectric substrate is, for example, about 200 μm. The functional portion includes, for example, one or more IDT (Interdigital Transducer) electrodes. The functional portion may include a terminal electrode for external connection. The number of the terminal electrodes may be one or more. When the electronic component 2 is a SAW filter, the surface 21 of the electronic component 2 includes, for example, an exposed portion of the surface of the piezoelectric substrate and a surface exposed in the functional portion. When the electronic component 2 is a SAW filter, the configuration is not limited to the configuration including the entire (Bulk) piezoelectric substrate, and for example, the following configuration may be adopted: the piezoelectric transducer has a laminated structure in which a silicon substrate, a silicon oxide film, and a piezoelectric thin film are laminated in this order, and functional portions (IDT electrodes, terminal electrodes, and the like) are formed on the piezoelectric thin film. Piezoelectric deviceThe film being, for example, LiTaO3Thin films or LiNbO3A film. When λ is the wavelength of the elastic wave determined by the electrode finger period of the IDT electrode, the thickness of the piezoelectric thin film is preferably 3.5 λ or less. The thickness of the piezoelectric thin film is, for example, about 0.5 μm. The thickness of the silicon oxide film is preferably 2.0 λ or less. The thickness of the silicon oxide film is, for example, about 0.5 μm. The thickness of the laminated structure is, for example, about 200 μm.
(2.2) Structure
As shown in fig. 1, the structure 3 is configured to hold the electronic component 2. The structure 3 has the first surface 31 and the second surface 32 opposite to each other in the first direction D1 of the electronic component module 1. More specifically, the structure 3 is formed in a plate shape and has a first surface 31 and a second surface 32 on opposite sides to each other in the thickness direction. The planar shape of the structure 3 (the outer peripheral shape of the structure 3 when viewed from the thickness direction of the structure 3 (the first direction D1)) is rectangular. However, the planar shape of the structure 3 is not limited to a rectangle, and may be, for example, a square. The planar size of the structure 3 is larger than the planar size of the electronic component 2.
The structure 3 covers a part of the side surface 23 and the back surface 22 of the electronic component 2. That is, the electronic component 2 is disposed inside the structure 3. The structure 3 holds the electronic component 2 in a state where the surface 21 of the electronic component 2 is exposed.
The structure 3 is, for example, a conductive structure formed of a conductive metal or alloy, or a conductive resin containing the metal or alloy. More specifically, the structure 3 is made of a conductive material containing Cu, for example. Further, the structure 3 is formed of a porous metal. More specifically, the structure 3 is not formed of Cu as a whole, but is formed of a Cu structure having a porous structure. The thermal conductivity of the structure 3 is larger than that of the resin structure. Further, since the structure 3 is formed of Cu, the structure 3 is formed of a conductor having a low magnetic permeability. The metal constituting the structure 3 is not limited to Cu, and may be any metal as long as the relative permeability is around 1 or less, for example. Examples of such a substance include Al.
Further, the structure 3 is in contact with the electronic component 2. That is, no other member is interposed between the structure 3 and the electronic component 2, and the structure 3 holds the electronic component 2 in contact with the electronic component 2.
(2.3) through wiring
As shown in fig. 1, in the electronic component module 1, a plurality of (two in the illustrated example) through-wirings 4 are arranged on the side of the electronic component 2 in the structure 3. In a second direction D2 perpendicular to the first direction D1, the plurality of through-wirings 4 are provided separately from the electronic component 2. The plurality of through-wirings 4 are held by the structure 3.
The through-wiring 4 has a columnar shape (here, a columnar shape), and has a first end surface 41 and a second end surface 42 on opposite sides to each other in a direction parallel to the thickness direction of the structure 3. In short, the through-wiring 4 has the first end face 41 and the second end face 42 opposite to each other in the first direction D1. The second end 52 of the wiring layer 5 is laminated on the first end surface 41 of the through-wiring 4. In this way, in the electronic component module 1, the through-wiring 4 is electrically connected to the wiring layer 5.
In the electronic component module 1, the through-wiring 4 is electrically connected to the electronic component 2 via the wiring layer 5. In the electronic component module 1, the positions and the number of the through-wirings 4 are not particularly limited.
The material of the through-wiring 4 is, for example, metal or alloy. In the electronic component module 1 according to embodiment 1, the material of the through-wiring 4 is, for example, Cu. The material of the through-wiring 4 is not limited to Cu, and may be Ni, for example. The through-wiring 4 is formed by electrolytic plating, for example.
(2.4) Wiring layer
The wiring layer 5 electrically connects the electronic component 2 and the through wiring 4 on the first surface 31 side of the structure 3 and the front surface 21 side of the electronic component 2. The wiring layer 5 has a first end 51 connected to the surface 21 of the electronic component 2 (the surface of the terminal portion thereof) and a second end 52 connected to the through-wiring 4. The wiring layer 5 is disposed across the front surface 21 of the electronic component 2, the first end surface 41 of the through wiring 4, and an insulating portion 63 of the insulator 6 described later. The thickness of the wiring layer 5 is, for example, 5 μm or more and 10 μm or less.
The material of the wiring layer 5 is, for example, a metal or an alloy. In the electronic component module 1 according to embodiment 1, the material of the wiring layer 5 is Cu, for example. In short, the wiring layer 5 is a Cu layer. The wiring layer 5 is not limited to a single-layer structure, and a stacked structure in which a plurality of layers are stacked may be employed. The wiring layer 5 is formed by, for example, sputtering or plating. The method of forming the wiring layer 5 is not limited to sputtering or plating, and other forming methods may be employed.
The electronic component module 1 includes an external connection wiring layer 8 for electrically connecting the through-wiring 4 and the circuit board 10 (see fig. 2) in addition to the wiring layer 5. The external connection wiring layer 8 is formed on the second surface 32 side of the structure 3 so as to extend over the second end surface 42 of the through wiring 4 and an insulating portion 64 of the insulator 6 described later. The thickness of the external connection wiring layer 8 is, for example, 5 μm or more and 10 μm or less.
The material of the external-connection wiring layer 8 is, for example, a metal or an alloy. In the electronic component module 1 according to embodiment 1, the material of the external connection wiring layer 8 is Cu, similarly to the wiring layer 5. As with the wiring layer 5, the external connection wiring layer 8 is not limited to a single-layer structure, and may be a laminated structure in which a plurality of layers are laminated. The external connection wiring layer 8 is formed by, for example, sputtering or plating. The method of forming the external connection wiring layer 8 is not limited to sputtering or plating, and other forming methods may be used.
The electronic component module 1 further includes a resist layer 90 formed on the external connection wiring layer 8. The resist layer 90 is formed of a material having lower solder wettability than the external connection wiring layer 8. The resist layer 90 is, for example, a polyimide layer. Thus, in the electronic component module 1, when the external connection wiring layer 8 is bonded to the circuit board 10 or the like with solder, spreading and wetting of solder on the external connection wiring layer 8 can be suppressed.
(2.5) insulator
The insulator 6 includes a plurality of insulating portions 61, 63, and 64. Each insulating portion 61 is provided to surround the through-wiring 4 between the structure 3 and the through-wiring 4, and electrically insulate the structure 3 from the through-wiring 4. Each of the insulating portions 61 is provided to cover the entire peripheral surface of the columnar through-wiring 4 except for the first end surface 41 and the second end surface 42. The insulating section 63 is provided between the structure 3 and the wiring layer 5 along the first surface 31 of the structure 3, and electrically insulates the structure 3 from the wiring layer 5. The insulating portion 64 is provided along the second surface 32 of the structure 3 between the structure 3 and the wiring layer 8 for external connection, and electrically insulates the structure 3 from the wiring layer 8 for external connection. The plurality of insulating portions 61, 63, and 64 are integrally formed.
The insulator 6 is formed of an inorganic insulating material. The inorganic insulating material used for the insulator 6 is, for example, silicon oxide or silicon nitride. The insulator 6 is, for example, a thin film insulating layer thinner than the width of the through wiring 4 in the first direction D1. The film thickness of the thin-film insulating layer is, for example, 0.1 μm or more and 30 μm or less.
The insulator 6 as described above is provided in the structure 3, but a part of the second surface 32 of the structure 3 overlapping the rear surface 22 in a plan view from the first direction D1 is exposed without being covered with the insulator 6.
(2.6) electrodes
The electronic component module 1 further includes a plurality of (two in the illustrated example) electrodes 7 for external connection formed on the second end 52 of the wiring layer 5. The electronic component module 1 further includes a resist layer 9 formed on the wiring layer 5. The resist layer 9 is formed of a material having lower solder wettability than the electrode 7 and the wiring layer 5. The resist layer 9 is, for example, a polyimide layer. Thus, in the electronic component module 1, when the electrodes 7 are bonded to another electronic component 20 or the like with solder, spreading and wetting of the solder on the wiring layer 5 can be suppressed.
The electrode 7 is, for example, a laminated film of a Ti film on the second end 52 of the wiring layer 5 and an Au film on the Ti film. The layered structure of the electrode 7 is merely an example, and is not limited to this example.
(3) Method for manufacturing electronic component module
Next, a method for manufacturing the electronic component module 1 according to embodiment 1 will be described with reference to fig. 3A to 3F and fig. 4A to 4E.
In the method of manufacturing the electronic component module 1, the first step to the tenth step are sequentially performed after the electronic component 2 is prepared.
In the first step, as shown in fig. 3A, a laminate 112 is prepared. The laminate 112 includes a flat plate-shaped support 110 and a conductive layer 111 bonded to one surface of the support 110 in the thickness direction via an adhesive layer 113.
In the second step, as shown in fig. 3B, a plurality of conductive posts 400 serving as the basis of the through-wiring 4 are formed on the conductive layer 111 of the stacked body 112. In this step, first, a positive photoresist layer is formed to cover the conductive layer 111. Thereafter, a portion of the photoresist layer at a predetermined position for forming the through-wiring 4 (a hole portion is formed at the predetermined position for forming the through-wiring 4) is removed by photolithography, whereby a portion of the conductive layer 111 to be a base of the through-wiring 4 is exposed. After that, the conductor post 400 is formed by electrolytic plating. When the conductive post 400 is formed, current is passed between an anode disposed opposite to the surface of the photoresist layer with a plating solution containing copper sulfate interposed therebetween and a cathode composed of the conductive layer 111, so that the conductive post 400 is deposited from the exposed surface of the conductive layer 111 in the thickness direction of the photoresist layer. Then, the photoresist layer is removed.
In the third step, as shown in fig. 3C, the electronic component 2 is temporarily fixed to the conductive layer 111 of the stacked body 112 on which the conductive post 400 is formed. More specifically, first, a liquid (paste) resin adhesive layer (not shown) is formed on the conductive layer 111. Next, the surface 21 of the electronic component 2 is opposed to the resin adhesive layer, and the electronic component 2 is pressed against the resin adhesive layer. Thereby, in the third step, the electronic component 2 is temporarily fixed to the resin adhesive layer. The resin adhesive layer is preferably formed of a positive resist having photosensitivity.
In the fourth step, as shown in fig. 4D, an insulating layer 600 serving as a base of the insulator 6 is formed. That is, the insulating layer 600 is formed on the exposed surfaces of the conductive layer 111 and the conductive post 400. The insulating layer 600 uses an inorganic insulating material. The inorganic insulating film used for the insulating layer 600 includes, for example, silicon oxide or silicon nitride. The insulating layer 600 is formed on the conductive layer 111 and the conductive pillar 400 by, for example, CVD (Chemical vapor deposition) and lithography.
In the fifth step, as shown in fig. 4E, the metal structural layer 30 serving as the base of the structure 3 is formed on the laminate 112 so as to cover the electronic component 2 and the insulating layer 600, and the insulating layer 600 covers the conductive post 400 and the conductive layer 111. In short, in the fifth step, the metal structural layer 30 is formed on the conductive layer 111 of the laminate 112 with the insulating layer 600 interposed therebetween. Here, the metal structural layer 30 has a first surface 301 and a second surface 302 on opposite sides to each other in the thickness direction thereof. The first surface 301 of the metal structure layer 30 is a surface in contact with the insulating layer 600. The metal structural layer 30 covers the back surface 22 and the side surface 23 of the electronic component 2. The metal structure layer 30 covers the side surfaces and the distal end surface of the conductive post 400 with the insulating layer 600 interposed therebetween. Therefore, the metal structural layer 30 is thicker than the structure 3, and a part of the metal structural layer 30 is interposed between the second surface 302 of the metal structural layer 30 and the distal end surface of the conductive post 400.
In the fifth step, the metal structural layer 30 containing metal as a main component is formed by a thermal spraying method. When the thermal spraying method is used, a Cu structure having a porous structure can be formed as the metal structural layer 30. Note that the method of forming the metal structure layer 30 is not limited to the thermal spraying method.
In the case where the structure 3 is a conductive structure formed of a conductive resin containing a metal or an alloy, the conductive resin is formed in the fifth step.
In the sixth step, as shown in fig. 3F, the structure 3 is formed by polishing the metal structural layer 30 from the second surface 302 side opposite to the first surface 301 until the thickness of the structure 3 is reached. In short, in the sixth step, the metal structural layer 30 is polished so that the end surface of the conductive post 400 is exposed, and the second surface 302 of the metal structural layer 30 is substantially flush with the end surface of the conductive post 400. In the sixth step, the end surface of the conductive post 400 needs to be exposed, and it is not necessary to make the end surface of the conductive post 400 flush with the second surface 302 of the metal structural layer 30. By performing the sixth step, the structure 3, the through-wiring 4, and a part of the insulator 6 are formed.
Further, in the sixth step, the insulating portion 64 which is a part of the insulator 6 is formed. More specifically, an insulating film which is a base of the insulating portion 64 is formed on the distal end surface of the through wiring 4 and the exposed surface of the structure 3 and the insulating portion 61 of the insulator 6, and thereafter, unnecessary portions of the insulating film are removed by etching. Thereby, the insulating portion 64 of the insulator 6 is formed.
In the seventh step, as shown in fig. 4A, the laminate 112 and the resin adhesive layer are removed from the structure including the electronic component 2, the structure 3, the through-wiring 4, the insulator 6, the laminate 112, and the resin adhesive layer (not shown). Thereby, in the seventh step, the front surface 21 of the electronic component 2, both end surfaces (the first end surface 41 and the second end surface 42) of the through-wiring 4, and a part of the insulator 6 can be exposed. In the seventh step, for example, the adhesive strength between the adhesive conductive layer 111 and the adhesive layer 113 of the support 110 is reduced, and the support 110 in the laminate 112 is removed (peeled). The adhesive layer 113 is preferably formed of an adhesive agent capable of reducing the adhesive force by any of ultraviolet rays, infrared rays, and heat. The conductive layer 111 in the stacked body 112 can be removed by wet etching, for example. In the seventh step, the resin bonding layer can be removed by exposing the resin bonding layer to light and then developing the exposed resin bonding layer.
In the eighth step, as shown in fig. 4B, a plurality of wiring layers 5 for electrically connecting the electronic component 2 and the through wiring 4 are formed. In the eighth step, each wiring layer 5 is formed by, for example, sputtering or plating, photolithography, and etching.
In the ninth step, as shown in fig. 4C, a plurality of external connection wiring layers 8 are formed, and then a resist layer 90 is formed. In the ninth step, the external connection wiring layers 8 are formed by, for example, sputtering, plating, photolithography, and etching. In addition, in the ninth step, the resist layer 90 is formed by a coating technique such as spin coating and a photolithography technique.
In the tenth step, as shown in fig. 4D, a plurality of electrodes 7 are formed, and then, a resist layer 9 is formed. More specifically, in the tenth step, the electrode 7 is formed by a thin film forming technique such as sputtering, a photolithography technique, and an etching technique. Thereafter, in the tenth process, the resist layer 9 is formed by using a coating technique such as spin coating and a photolithography technique, for example. Thereafter, in the tenth step, conductive bumps 43 and 44 are formed. The conductive bumps 43 and 44 are solder bumps, but are not limited to solder bumps, and may be gold bumps, for example.
If the laminate 112 having a size that enables formation of an aggregate of the plurality of electronic component modules 1 is used as the laminate 112 in the first step, the aggregate of the plurality of electronic component modules 1 can be formed by performing the first step to the tenth step. In this case, for example, the plurality of electronic component modules 1 can be obtained by dicing the assembly of the plurality of electronic component modules 1 into the individual electronic component modules 1.
In manufacturing the communication module 200 including the electronic component module 1, the tenth step may be followed by the eleventh step described below, and the communication module 200 may be separated into individual communication modules 200 to obtain a plurality of communication modules 200.
In the eleventh step, as shown in fig. 4E, for example, an electronic component 20 different from the electronic component 2 of the electronic component module 1 may be mounted on the electronic component module 1. More specifically, in the eleventh step, the terminal electrodes of the electronic component 20 and the electrodes 7 of the electronic component module 1 are electrically and mechanically connected to each other via the conductive bumps 43. After that, a cap layer 201 covering the electronic component 20 is formed. As a material of the cap layer 201, for example, polyimide, benzocyclobutene, polybenzoxazole, a phenol resin, or a silicone resin can be used. The cover layer 201 functions as a sealing layer for sealing the electronic component 20 on the electronic component module 1.
(4) Effect
As described above, in the electronic component module 1 according to embodiment 1, in the module structure in which the through-wiring 4 penetrates the structure 3 covering at least a part of the electronic component 2, the structure 3 has conductivity. In the electronic component module 1, the thermal conductivity of the structure 3 having electrical conductivity is higher than that of the structure having electrical insulation. Therefore, heat generated in the electronic component 2 can be radiated more efficiently. Further, since the insulator 6 is provided between the through-wiring 4 and the structure 3, electrical insulation between the electrically conductive structure 3 and the through-wiring 4 can be improved. Further, since the insulator 6 is provided between the wiring layer 5 and the structure 3, electrical insulation between the conductive structure 3 and the wiring layer 5 can be improved.
In particular, when the electronic component 2 is a device having a large heat generation, such as an IC, an elastic wave filter, or a power amplifier, which generates a high heat, the effect is large. For example, when the electronic component 2 is an IC that generates high heat, it is possible to suppress malfunction, degradation in characteristics, and the like due to heat generation by improving the heat radiation performance of the electronic component module 1. In addition, when the electronic component 2 is an elastic wave filter, the frequency shift amount during operation of the elastic wave filter can be reduced by improving the heat dissipation of the electronic component module 1.
In addition, in the electronic component module 1 according to embodiment 1, since it is not necessary to separately provide a structure for heat dissipation, size reduction and cost reduction can be achieved.
In the electronic component module 1 according to embodiment 1, the structure 3 having conductivity holds the electronic component 2 in a state of being in contact with the electronic component 2. This facilitates the transfer of heat radiated from the electronic component 2 to the structure 3, and therefore, heat generated in the electronic component 2 can be more effectively dissipated.
In the electronic component module 1 of embodiment 1, the structures 3 are formed of a conductive material containing Cu. By using Cu having high thermal conductivity for the structure 3, heat generated in the electronic component 2 can be more effectively dissipated.
In the electronic component module 1 of embodiment 1, the structure 3 is formed by a conductor including a porous metal. As a result, the structure 3 is formed with a plurality of holes, and therefore, in the structure 3, heat dissipation can be improved as compared with the case where the structure is made of resin, and elasticity can be improved as compared with the case where the structure is made of metal as a whole. As a result, the thermal stress applied to the electronic component 2 can be reduced. In particular, when the electronic component 2 is an acoustic wave device, in the acoustic wave device, since in-plane anisotropy of the linear expansion coefficient of the piezoelectric substrate is large, high reliability of the electronic component 2 can be maintained by reducing the thermal stress applied to the electronic component 2.
In the electronic component module 1 of embodiment 1, the structure 3 is formed by a conductor having a low magnetic permeability. This can suppress deterioration of the magnetic characteristics in the electronic component 2. In particular, when the electronic component 2 is a high-frequency device, the effect of suppressing deterioration of magnetic characteristics is large.
(5) Modification example
As a modification of embodiment 1, the structure 3 may be formed of a conductor including a porous metal and a low-elasticity material. More specifically, the structure 3 is formed by impregnating a conductor made of a low elastic material into a porous Cu structure. By impregnating the porous Cu structure with a low-elasticity material, a structure in which the gaps of the Cu particle necks are filled with the low-elasticity material is formed.
In the electronic component module 1 of the present modification, the structure 3 is formed by a conductor including a porous metal and a low-elasticity material. This enables the gaps between the metals to be filled with a low-elasticity material having a low elastic modulus, and thus heat generated in the electronic component 2 can be more effectively dissipated than when the structure is made of a metal having a porous structure.
In the electronic component module 1 according to embodiment 1, the second surface 32 of the structure 3 is planar, and the shortest distance from the second surface 32 of the structure 3 to the surface 21 of the electronic component 2 is longer than the shortest distance from the second surface 32 to the first surface 31. Thus, the electronic component module 1 according to embodiment 1 can be reduced in height.
In contrast, as a modification of embodiment 1, the second surface 32 of the structure 3 may be planar, and the distance from the second surface 32 of the structure 3 to the surface 21 of the electronic component 2 may be shorter than the distance from the second surface 32 of the structure 3 to the first surface 31 of the structure 3. Thus, in the electronic component module 1 of the present modification, the surface 21 of the electronic component 2 is less likely to be scratched.
As another modification of embodiment 1, the second surface 32 of the structure 3 may be planar, and the distance from the second surface 32 of the structure 3 to the surface 21 of the electronic component 2 may be the same as the distance from the second surface 32 of the structure 3 to the first surface 31 of the structure 3.
In short, the structure 3 may cover at least a part of the side surface 23 of the electronic component 2. "covering at least a part of the side surface 23 and the back surface 22 of the electronic component 2" means that the side surface 23 of the electronic component 2 covers the side surface 23 over the entire circumference at least from a position shifted from the first end on the side of the front surface 21 to the second end on the side of the back surface 22 in the side surface 23 of the electronic component 2 to the boundary between the side surface 23 and the back surface 22, and includes covering the entire side surface 23 of the electronic component 2.
In the example of fig. 1, the electronic component module 1 includes two wiring layers 5 directly connected to the electronic component 2 with respect to one electronic component 2, but the number of the wiring layers 5 is not limited to two. The number of the wiring layers 5 may be one, or three or more.
In the example of fig. 1, the electronic component module 1 includes one electronic component 2, but the number of electronic components 2 is not limited to one, and may be plural. In this case, the plurality of electronic components 2 may be the same type of electronic component, may be different electronic components, or may be the same electronic component as only a part of the plurality of electronic components 2. In the case where the electronic component module 1 includes a plurality of electronic components 2, the layout of the through-wiring 4 and the wiring layer 5 may be different for each electronic component 2.
The electronic component module 1 according to each of the above modifications also exhibits the same effects as the electronic component module 1 according to embodiment 1.
(embodiment mode 2)
As shown in fig. 5, an electronic component module 1a according to embodiment 2 differs from the electronic component module 1 (see fig. 1) according to embodiment 1 in that an insulator 6a is provided not only between the structures 3 and the through-wires 4 but also between the structures 3 and the electronic components 2. The same components as those of the electronic component module 1 of embodiment 1 are denoted by the same reference numerals, and description thereof is omitted.
