阅读说明：本技术 测试片及其制造方法和晶圆键合缺陷的检测方法 (Test piece, manufacturing method thereof and detection method of wafer bonding defects ) 是由 姚佳辉 于 2019-09-20 设计创作，主要内容包括：本发明提供了一种测试片及其制造方法和晶圆键合缺陷的检测方法以及半导体器件的制造方法,通过将测试片和第二晶圆放置在晶圆键合机台上进行键合,以形成晶圆键合结构,且所述测试片上的键合图形位于所述晶圆键合结构的顶表面；以及,扫描所述晶圆键合结构的顶表面的所述键合图形,并根据所述扫描的结果以及所述测试片上的键合图形的前值坐标,获得所述晶圆键合结构中的变形缺陷的分布情况,使得能够快速且准确地检测晶圆键合机台的变形参数是否出现异常,从而避免导致批量产品异常。(The invention provides a test piece and a manufacturing method thereof, a detection method of wafer bonding defects and a manufacturing method of a semiconductor device, wherein the test piece and a second wafer are placed on a wafer bonding machine table for bonding to form a wafer bonding structure, and a bonding pattern on the test piece is positioned on the top surface of the wafer bonding structure; and scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution condition of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece, so that whether the deformation parameters of the wafer bonding machine are abnormal or not can be quickly and accurately detected, and the batch product abnormality is avoided.)

1. A manufacturing method of a test strip is used for detecting deformation defects in a wafer bonding structure caused by a wafer bonding machine, and is characterized by comprising the following steps:

providing a first wafer;

forming a bonding pattern on the surface of the first wafer; and the number of the first and second groups,

defining previous value coordinates for each location of the bonding pattern.

2. The method of manufacturing a test strip of claim 1, wherein the bonding pattern includes at least 100 bonding marks.

3. The method for manufacturing a test strip according to claim 1, further comprising: and forming at least one adsorption film layer and/or at least one bonding film layer on the surface of the first wafer on which the bonding pattern is formed.

4. The method of manufacturing a test strip according to claim 3, wherein the step of forming the bonding pattern and the adsorption film layer and/or the bonding film layer includes:

forming a photoresist layer on the surface of the first wafer on which the bonding pattern is formed;

exposing the photoresist layer, wherein the bonding pattern and the photoresist layer at the position of the adsorption film layer and/or the bonding film layer are not exposed to form a patterned photoresist layer; and the number of the first and second groups,

and etching the first wafer by taking the patterned photoresist layer as a mask to form the bonding pattern and the adsorption film layer and/or the bonding film layer.

5. A test piece is used for detecting deformation defects in a wafer bonding structure caused by a wafer bonding machine, and is characterized by comprising a first wafer, wherein a bonding graph is formed on the surface of the first wafer, and each position of the bonding graph has a defined previous value coordinate.

6. The test strip of claim 5, wherein the bonding pattern comprises at least 100 bonding indicia.

7. The test strip of claim 5, further comprising: and at least one adsorption film layer and/or at least one bonding film layer formed on the surface of the first wafer on which the bonding pattern is formed.

8. A method for detecting wafer bonding defects, comprising:

providing a test strip of any one of claims 5 to 7 and a second wafer;

placing the test piece and the second wafer on a wafer bonding machine table for bonding to form a wafer bonding structure, wherein a bonding pattern on the test piece is located on the top surface of the wafer bonding structure; and the number of the first and second groups,

and scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution condition of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece.

9. The method for detecting wafer bonding defects as claimed in claim 8, wherein the step of obtaining the distribution of deformation defects in the wafer bonding structure comprises:

scanning the bonding pattern on the top surface of the wafer bonding structure to obtain back value coordinates of each position of the bonding pattern; and the number of the first and second groups,

calculating a vector deviation value of each position of the bonded graph after bonding and before bonding in a rectangular coordinate system according to the previous value coordinate and the next value coordinate of each position of the bonded graph so as to obtain the distribution condition of the deformation defects in the wafer bonding structure;

the vector deviation value comprises the deformation direction of the same position on the bonding graph after bonding and before bonding, and the difference value of the horizontal coordinate and the difference value of the vertical coordinate.

10. The method of detecting wafer bonding defects of claim 8, further comprising: and separating the test piece from the second wafer, and scanning to obtain coordinates of each position of the bonding pattern on the separated test piece as new previous value coordinates of the test piece so as to repeatedly use the separated test piece for detecting the deformation defect in the wafer bonding structure caused by the wafer bonding machine.

11. A method of manufacturing a semiconductor device, comprising:

the method for detecting wafer bonding defects according to any one of claims 8 to 10 is adopted to detect the distribution of the deformation defects in the wafer bonding structure caused by the wafer bonding machine, so as to obtain the abnormal component of the wafer bonding machine, which causes the deformation defects in the wafer bonding structure, and to perform maintenance and improvement on the abnormal component.

Technical Field

The invention relates to the technical field of semiconductor manufacturing, in particular to a test piece and a manufacturing method thereof, a detection method of wafer bonding defects and a manufacturing method of a semiconductor device.

Background

The distortion parameter is a very important parameter of a wafer bonding (bond) machine, and once the performance of the distortion parameter is deviated (performance shift), it will cause an abnormality in the subsequent process. Therefore, it is necessary to quickly and accurately detect the performance of the deformation parameters of the wafer bonding machine, find out the failed component on the machine in time and improve the failed component, so as to avoid the abnormality of the batch products.

The method for detecting whether the deformation parameters of the wafer bonding machine are abnormal at present comprises the following steps: preparing a rapid processing batch, rapidly performing subsequent processes after wafer bonding until the wafer reaches an exposure station after the thinning process, and detecting whether a bonding mark (bonding mark) is deformed by an exposure machine to judge whether the deformation parameter of a wafer bonding machine is abnormal. However, the conventional method has the following problems:

1. the existing bonding mark is located on the bonding interface of the bonded wafer, as shown in fig. 1a, the upper wafer 11 is bonded with the lower wafer 12, the bonding mark 13 is located on the upper wafer 11 of the bonding interface, and the upper wafer 11 is very thick, so that the exposure machine cannot detect the bonding mark, and therefore, the detection can be performed at the exposure station after the thinning process (as shown in fig. 1 b); at least more than ten hours are needed for the wafer to reach the exposure station after the wafer is bonded, if the deformation parameters of the wafer bonding machine station are abnormal, the bonded wafers in the period of time are all abnormal, and the affected quantity is large;

2. the factors influencing the deformation of the bonding mark on the bonding interface include not only the deformation parameters of the wafer bonding machine, but also the deformation of the bonding mark on the wafer during manufacturing, and the deformation degrees of the bonding marks on different wafers are different, so that the existing detection method cannot eliminate the deformation of the bonding mark on the wafer caused by the factors, and further cannot quickly and accurately judge whether the deformation parameters of the wafer bonding machine are abnormal;

3. the number of bonding marks on the bonding interface is only dozens, and only the deformation in the X (horizontal) direction and the Y (vertical) direction is measured, so that the abnormal deformation parameters of the wafer bonding machine are caused by many factors (for example, the upper wafer and the lower wafer are not aligned, the suction force when the suction cup grabs the upper wafer is uneven, the force applied to the upper wafer during bonding is uneven, and the like).

Therefore, how to accurately and quickly detect whether the deformation parameters of the wafer bonding machine are abnormal or not, so as to avoid the occurrence of batch product abnormality is a problem which needs to be solved at present.

Disclosure of Invention

The invention aims to provide a test piece and a manufacturing method thereof, a detection method of wafer bonding defects and a manufacturing method of a semiconductor device, which can quickly and accurately detect whether the deformation parameters of a wafer bonding machine station are abnormal or not, thereby avoiding the abnormality of batch products.

In order to achieve the above object, the present invention provides a method for manufacturing a test strip, wherein the test strip is used for detecting a deformation defect in a wafer bonding structure caused by a wafer bonding machine, and the method for manufacturing the test strip comprises:

providing a first wafer;

forming a bonding pattern on the surface of the first wafer; and the number of the first and second groups,

defining previous value coordinates for each location of the bonding pattern.

Optionally, the bonding pattern includes at least 100 bonding marks.

Optionally, the method for manufacturing the test strip further includes: and forming at least one adsorption film layer and/or at least one bonding film layer on the surface of the first wafer on which the bonding pattern is formed.

Optionally, the step of forming the bonding pattern and the adsorption film layer and/or the bonding film layer includes:

forming a photoresist layer on the surface of the first wafer on which the bonding pattern is formed;

exposing the photoresist layer, wherein the bonding pattern and the photoresist layer at the position of the adsorption film layer and/or the bonding film layer are not exposed to form a patterned photoresist layer; and the number of the first and second groups,

and etching the first wafer by taking the patterned photoresist layer as a mask to form the bonding pattern and the adsorption film layer and/or the bonding film layer.

The invention also provides a test piece for detecting the deformation defect in the wafer bonding structure caused by the wafer bonding machine, wherein the test piece comprises a first wafer, the surface of the first wafer is provided with a bonding graph, and each position of the bonding graph has a defined front value coordinate.

Optionally, the bonding pattern includes at least 100 bonding marks.

Optionally, the test strip further comprises: and at least one adsorption film layer and/or at least one bonding film layer formed on the surface of the first wafer on which the bonding pattern is formed.

The invention also provides a method for detecting the wafer bonding defect, which comprises the following steps:

providing the test piece and a second wafer provided by the invention;

placing the test piece and the second wafer on a wafer bonding machine table for bonding to form a wafer bonding structure, wherein a bonding pattern on the test piece is located on the top surface of the wafer bonding structure; and the number of the first and second groups,

and scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution condition of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece.

Optionally, the step of obtaining the distribution of the deformation defects in the wafer bonding structure includes:

scanning the bonding pattern on the top surface of the wafer bonding structure to obtain back value coordinates of each position of the bonding pattern; and the number of the first and second groups,

calculating a vector deviation value of each position of the bonded graph after bonding and before bonding in a rectangular coordinate system according to the previous value coordinate and the next value coordinate of each position of the bonded graph so as to obtain the distribution condition of the deformation defects in the wafer bonding structure;

the vector deviation value comprises the deformation direction of the same position on the bonding graph after bonding and before bonding, and the difference value of the horizontal coordinate and the difference value of the vertical coordinate.

Optionally, the method for detecting a wafer bonding defect further includes: and separating the test piece from the second wafer, and scanning to obtain coordinates of each position of the bonding pattern on the separated test piece as new previous value coordinates of the test piece so as to repeatedly use the separated test piece for detecting the deformation defect in the wafer bonding structure caused by the wafer bonding machine.

The present invention also provides a method for manufacturing a semiconductor device, comprising:

by adopting the method for detecting the wafer bonding defects, provided by the invention, the distribution situation of the deformation defects in the wafer bonding structure caused by the wafer bonding machine is detected, so that abnormal parts of the wafer bonding machine, which cause the deformation defects in the wafer bonding structure, are obtained, and the abnormal parts are maintained and improved.

Compared with the prior art, the technical scheme of the invention has the following beneficial effects:

1. according to the manufacturing method of the test piece, the bonding graph is formed on the surface of the first wafer, and the previous value coordinates of each position of the bonding graph are defined, so that the wafer bonding structure formed on the basis of the test piece can quickly and accurately detect whether the deformation parameter of the wafer bonding machine is abnormal, and the batch product abnormality is avoided.

2. According to the test piece, the bonding graph is formed on the surface of the first wafer, and each position of the bonding graph has the defined previous value coordinate, so that the wafer bonding structure formed on the basis of the test piece can quickly and accurately detect whether the deformation parameter of the wafer bonding machine is abnormal or not, and the batch product abnormality is avoided.

3. According to the method for detecting the wafer bonding defects, the test piece and the second wafer provided by the invention are placed on a wafer bonding machine table to be bonded, so that a wafer bonding structure is formed, and a bonding pattern on the test piece is positioned on the top surface of the wafer bonding structure; and scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution condition of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece, so that whether the deformation parameters of the wafer bonding machine are abnormal or not can be quickly and accurately detected, and the batch product abnormality is avoided.

4. According to the manufacturing method of the semiconductor device, the distribution situation of the deformation defects in the wafer bonding structure caused by the wafer bonding machine is detected by adopting the detection method of the wafer bonding defects provided by the invention, so that the abnormal parts of the wafer bonding machine, which cause the deformation defects in the wafer bonding structure, can be quickly and accurately obtained, the abnormal parts are maintained and improved, and the batch product abnormity is avoided.

Drawings

FIG. 1a is a schematic diagram of the position of a conventional bonding mark (before thinning a bonded wafer);

FIG. 1b is a schematic diagram of the position of a conventional bonding mark (after thinning a bonded wafer);

FIG. 2 is a flow chart of a method of manufacturing a test strip according to an embodiment of the present invention;

FIG. 3 is a schematic view of an adsorption film layer and a bonding film layer of a test strip according to an embodiment of the present invention;

FIG. 4 is a flowchart of a method for detecting wafer bonding defects according to an embodiment of the present invention;

FIG. 5 is a schematic illustration of the position of a bonding pattern according to one embodiment of the present invention;

FIG. 6 is a diagram illustrating the detection result of wafer bonding defects according to an embodiment of the present invention.

Detailed Description

In order to make the objects, advantages and features of the present invention more apparent, the test strip and the manufacturing method thereof, the method for detecting wafer bonding defects and the method for manufacturing a semiconductor device according to the present invention are further described in detail with reference to fig. 1a to 6. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.

An embodiment of the present invention provides a method for manufacturing a test strip, referring to fig. 2, where fig. 2 is a flowchart of a method for manufacturing a test strip according to an embodiment of the present invention, where the test strip is used to detect a deformation defect in a wafer bonding structure caused by a wafer bonding machine, and the method for manufacturing a test strip includes:

step S11, providing a first wafer;

step S12, forming a bonding pattern on the surface of the first wafer;

and step S13, defining the previous value coordinates of each position of the bonding pattern.

The method for manufacturing the test strip provided in this embodiment is described in more detail below:

according to step S11, a first wafer is provided. The first wafer may include a substrate and a film structure disposed on at least one side of the substrate, that is, the film structure is disposed on one side or both sides of the substrate. The substrate may be any suitable substrate known to those skilled in the art; the film structure may include a conductive structure, a gate structure, a dielectric layer, and the like, the conductive structure may include a metal interconnection structure, a plate of a resistor or a plate of a capacitor, and the gate structure may be a polysilicon gate or a metal gate. It should be noted that the structure of the first wafer is not limited in the present invention, and an appropriate first wafer may be selected according to a device to be formed.

According to step S12, a bonding pattern is formed on the surface of the first wafer. The bonding pattern may include at least 100 bonding marks. It is understood that the bonding pattern of the present invention may also include fewer than 100 bonding marks. The bonding graph comprises a plurality of bonding marks, so that whether the deformation parameters of the wafer bonding machine station are abnormal or not and the position of the abnormal is accurately analyzed according to the deformation condition of the bonding graph. The shape of the bonding mark can be round, square, irregular and the like, and it should be noted that the invention does not limit the shape of the bonding mark, and can select a proper shape according to the need of detecting the wafer bonding defect subsequently.

In addition, the test method of the test strip further includes: and forming at least one adsorption film layer or at least one bonding film layer on the surface of the first wafer on which the bonding pattern is formed, or simultaneously forming at least one adsorption film layer and at least one bonding film layer. The adsorption film layer can be a round, square or irregular plane so that a sucker on the wafer bonding machine can be adsorbed on the adsorption film layer; the bonding film layer can be a round, square or irregular plane, so that a bonding thimble on the wafer bonding machine can apply bonding pressure to the bonding film layer. The shapes of the adsorption film layer and the bonding film layer are not limited, and only the planes on which the sucking disc and the bonding thimble can operate are needed; the positions of the adsorption film layer and the bonding film layer on the first wafer are not limited. However, in order to make the adsorption of the first wafer more stable, at least three adsorption film layers may be uniformly distributed on the surface of the first wafer at positions close to the edge; and, in order to make the pressure applied to the first wafer more uniform, one bonding film layer may be disposed at the center of the surface of the first wafer, as shown in fig. 3, four square adsorption film layers 31 are uniformly distributed at positions close to the edge on the surface of the first wafer, and one square bonding film layer 32 is disposed at the center of the surface of the first wafer.

The bonding pattern and the adsorption film layer and/or the bonding film layer may be formed simultaneously or may be formed separately in different steps. The step of simultaneously forming the bonding pattern and the adsorption film layer and/or the bonding film layer may include: firstly, forming a photoresist layer on the surface of the first wafer, on which the bonding pattern is formed, wherein the photoresist layer covers the bonding pattern; then, exposing the photoresist layer, wherein the bonding pattern and the photoresist layer at the position of the adsorption film layer and/or the bonding film layer are not exposed to form a patterned photoresist layer; and then, etching the first wafer by taking the patterned photoresist layer as a mask to form the bonding pattern and the adsorption film layer and/or the bonding film layer.

According to step S13, leading coordinates of the positions of the bonding pattern are defined. That is to say, before the first wafer is subjected to the bonding process, the coordinate positions of the bonding pattern on the first wafer are defined, that is, the coordinate positions of the bonding marks included in the bonding pattern are defined, so that the subsequent calculation can obtain the specific deformation condition of the bonding pattern. A test machine can be adopted to scan and define the previous value coordinates of each position of the bonding graph, and then the data of the previous value coordinates are imported into an exposure machine for subsequent use; alternatively, the exposure machine may be directly used to detect the coordinate of the previous value of each position of the bonding pattern.

And bonding the test piece manufactured in the steps S11 to S13 and a second wafer in the subsequent steps to form a wafer bonding structure, so as to detect the deformation defect in the wafer bonding structure caused by the wafer bonding machine, and quickly and accurately detect whether the deformation parameter of the wafer bonding machine is abnormal, thereby avoiding the abnormality of batch products.

In addition, the steps in the method for manufacturing the test strip are not limited to the above forming sequence, and the sequence of the steps can be adjusted adaptively.

In summary, the manufacturing method of the test strip provided by the invention comprises the following steps: providing a first wafer; forming a bonding pattern on the surface of the first wafer; and defining previous value coordinates of each position of the bonding pattern. The manufacturing method of the test piece can rapidly and accurately detect whether the deformation parameters of the wafer bonding machine station are abnormal or not based on the wafer bonding structure formed by the test piece, thereby avoiding the batch product abnormality.

An embodiment of the present invention provides a test strip for detecting a deformation defect in a wafer bonding structure caused by a wafer bonding machine, where the test strip includes a first wafer, a bonding pattern is formed on a surface of the first wafer, and each position of the bonding pattern has a defined previous value coordinate.

The structure of the first wafer is already described in the step S11, and is not described herein again.

The bonding pattern may include at least 100 bonding marks. It is understood that the bonding pattern of the present invention may include fewer than 100 bonding marks. The bonding graph comprises a plurality of bonding marks, so that whether the deformation parameters of the wafer bonding machine station are abnormal or not and the position of the abnormal is accurately analyzed according to the deformation condition of the bonding graph. The shape of the bonding mark can be round, square, irregular and the like, and it should be noted that the invention does not limit the shape of the bonding mark, and can select a proper shape according to the need of detecting the wafer bonding defect subsequently.

The test strip may further include: and the bonding pattern is formed on the surface of the first wafer, and at least one adsorption film layer or at least one bonding film layer is formed on the surface of the first wafer, wherein the bonding pattern is formed on the surface of the first wafer, or at least one adsorption film layer and at least one bonding film layer are formed on the surface of the first wafer. The adsorption film layer can be a round, square or irregular plane so that a sucker on the wafer bonding machine can be adsorbed on the adsorption film layer; the bonding film layer can be a round, square or irregular plane, so that a bonding thimble on the wafer bonding machine can apply bonding pressure to the bonding film layer. The shapes of the adsorption film layer and the bonding film layer are not limited, and only the planes on which the sucking disc and the bonding thimble can operate are needed; the positions of the adsorption film layer and the bonding film layer on the first wafer are not limited.

The previous value coordinates of each position of the bonding pattern are defined, that is, before the bonding process is performed on the first wafer, the coordinate positions of each bonding mark included in the bonding pattern are defined, so that the specific deformation condition of the bonding pattern can be obtained through subsequent calculation.

The test piece is bonded with a second wafer in the subsequent step to form a wafer bonding structure for detecting the deformation defect in the wafer bonding structure caused by the wafer bonding machine, so that whether the deformation parameter of the wafer bonding machine is abnormal or not can be quickly and accurately detected, and the abnormality of batch products is avoided.

In summary, the test piece provided by the present invention includes a first wafer, a bonding pattern is formed on a surface of the first wafer, and each position of the bonding pattern has a defined previous value coordinate. The test piece enables the wafer bonding structure formed based on the test piece to quickly and accurately detect whether the deformation parameters of the wafer bonding machine station are abnormal or not, so that the batch product abnormity is avoided.

An embodiment of the present invention provides a method for detecting a wafer bonding defect, and referring to fig. 4, fig. 4 is a flowchart of a method for detecting a wafer bonding defect according to an embodiment of the present invention, where the method for detecting a wafer bonding defect includes:

step S21, providing the test piece and the second wafer provided by the invention;

step S22, placing the test piece and the second wafer on a wafer bonding machine for bonding to form a wafer bonding structure, wherein the bonding pattern on the test piece is located on the top surface of the wafer bonding structure;

step S23, scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece.

The method for detecting the wafer bonding defect is described in detail as follows:

according to step S21, the test strip and the second wafer provided by the present invention are provided. The second wafer may also include a substrate and a film structure disposed on at least one side of the substrate, that is, the film structure is disposed on one side or both sides of the substrate. The structure of the second wafer is not limited in the invention, and the second wafer can be selected as appropriate according to the device to be formed. The first wafer may be a device wafer (device wafer), the second wafer may be a carrier wafer (carrier wafer), and the types of the first wafer and the second wafer may be interchanged.

And according to the step S22, placing the test piece and the second wafer on a wafer bonding machine for bonding to form a wafer bonding structure, wherein the bonding pattern on the test piece is located on the top surface of the wafer bonding structure. As shown in fig. 5, the test piece 21 is bonded to the second wafer 22 to form the wafer bonding structure, and the bonding pattern 23 is located on the top surface of the wafer bonding structure.

When the adsorption film layer and the bonding film layer are further formed on the surface of the test piece on which the bonding pattern is formed, the step of forming the wafer bonding structure may include: firstly, placing the second wafer at a set position on the wafer bonding machine; then, a sucker on a wafer bonding machine table adsorbs the adsorption film layer on the test piece so as to move the test piece to the upper part of the second wafer and align the test piece with the second wafer; and then, applying pressure to the bonding film layer on the test wafer by using a bonding top on a wafer bonding machine table to enable the test wafer to be in contact bonding with the second wafer, and applying external conditions such as certain temperature, certain voltage and the like to the test wafer and the second wafer by using other components on the wafer bonding machine table to enable atomic or intermolecular bonding force to be generated between the test wafer and the second wafer, so that the test wafer and the second wafer are bonded together to form the wafer bonding structure, wherein the bonding pattern, the adsorption film layer and the bonding film layer are located on the top surface of the wafer bonding structure.

When the adsorption film layer is not formed on the surface of the test piece on which the bonding pattern is formed, a wafer grabbing device can be arranged on the wafer bonding machine table to grab and move the test piece to the position above the second wafer; when the bonding film layer is not formed on the surface of the test piece on which the bonding pattern is formed, the bonding thimble can apply force on the adsorption film layer so as to enable the test piece to be in contact bonding with the second wafer.

The bonding pattern on the test piece is positioned on the top surface of the wafer bonding structure, so that the deformation condition of the bonding pattern on the wafer bonding structure can be directly detected after bonding, and the deformation condition of the bonding pattern is detected without processes such as annealing and thinning, so that whether the deformation parameter of the wafer bonding machine table is abnormal or not can be quickly detected, and the generation of the wafer bonding structure with the batch deformation defect is avoided. In addition, a wafer bonding structure formed by bonding the test piece and the second wafer is adopted to detect the condition of deformation defects in the wafer bonding structure caused by a wafer bonding machine table, and each position of a bonding graph on the test piece has a defined front value coordinate, so that the existing deformation condition of the test piece before bonding is eliminated, the interference on the condition of deformation defects in the wafer bonding structure caused by analyzing the wafer bonding machine table is avoided, and the analysis result is more accurate.

According to the step S23, scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution condition of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece. Since the deformation of the bonding pattern on the top surface of the wafer bonding structure occurs when the deformation parameter of the wafer bonding machine is abnormal, the specific condition of the abnormality of the deformation parameter of the wafer bonding machine can be analyzed by detecting the deformation condition of the bonding pattern.

The step of obtaining the distribution situation of the deformation defects in the wafer bonding structure comprises the following steps: firstly, scanning the bonding pattern on the top surface of the wafer bonding structure to obtain a back value coordinate of each position of the bonding pattern, and scanning the bonding pattern on the top surface of the wafer bonding structure by using an exposure machine; and then, calculating a vector deviation value of each position of the bonded graph after bonding and before bonding in a rectangular coordinate system according to the previous value coordinate and the next value coordinate of each position of the bonded graph so as to obtain the distribution condition of the deformation defects in the wafer bonding structure. The vector deviation value comprises the deformation direction of the same position on the bonding graph after bonding and before bonding, and the difference value of the horizontal coordinate and the difference value of the vertical coordinate. As shown in fig. 6, the deformation of the bonding pattern on the top surface of the wafer bonding structure may be represented by an arrow in a rectangular coordinate system, where the horizontal coordinate is an X axis and the vertical coordinate is a Y axis, and the deformation of the bonding pattern on the top surface of the wafer bonding structure is represented by the arrow, and the larger the number of bonding marks included in the bonding pattern, the larger the number of arrows in the rectangular coordinate system. The position where the arrow starts is the coordinate position where the bonding pattern should be originally located (namely the coordinate position where the bonding pattern is not deformed after bonding), and the position where the arrow points is the coordinate position where the bonding pattern is actually located after being deformed after bonding, so that the deformation direction of the same position on the bonding pattern after bonding can be obtained through the direction where the arrow points; meanwhile, the specific value of the deformation can be obtained according to the difference value of the X axis and the difference value of the Y axis between the coordinate position pointed by the arrow and the coordinate position at the beginning of the arrow. The maximum value, the average value, the minimum value and the like of the difference values of the X axis and the difference values of the Y axis corresponding to all the arrows can be counted, the targeted analysis is performed from the position with the most serious deformation defect or the position with concentrated deformation, meanwhile, the direction indicated by the arrow in the rectangular coordinate system is the direction of actual deformation and is not limited to the horizontal direction and the vertical direction, so that the reason of the deformation defect caused by the comprehensive analysis can be performed by combining the direction indicated by the arrow, the analysis on the deformation parameter abnormity of the wafer bonding machine table is more accurate, the fault component of the wafer bonding machine table causing the deformation parameter abnormity can be quickly analyzed, and the abnormal component is maintained and improved.

The method for detecting the wafer bonding defects further comprises the following steps: firstly, separating the test piece from the second wafer, wherein the test piece can be separated from the second wafer by using wafer separation equipment, so that the test piece and the second wafer are prevented from being damaged and deformed in the separation process; and then, scanning to obtain coordinates of each position of the bonding pattern on the separated test piece as new previous value coordinates of the test piece, so that the separated test piece is repeatedly used for detecting deformation defects in the wafer bonding structure caused by the wafer bonding machine.

In addition, each step in the method for detecting the wafer bonding defect is not limited to the forming sequence, and the sequence of each step can be adaptively adjusted.

In summary, the method for detecting wafer bonding defects provided by the present invention includes: providing the test piece and a second wafer provided by the invention; placing the test piece and the second wafer on a wafer bonding machine table for bonding to form a wafer bonding structure, wherein a bonding pattern on the test piece is located on the top surface of the wafer bonding structure; and scanning the bonding pattern on the top surface of the wafer bonding structure, and obtaining the distribution condition of the deformation defects in the wafer bonding structure according to the scanning result and the previous value coordinates of the bonding pattern on the test piece. The method for detecting the wafer bonding defects can quickly and accurately detect whether the deformation parameters of the wafer bonding machine are abnormal or not, so that the batch product abnormality is avoided.

An embodiment of the present invention provides a method for manufacturing a semiconductor device, including: by adopting the method for detecting the wafer bonding defects, provided by the invention, the distribution situation of the deformation defects in the wafer bonding structure caused by the wafer bonding machine is detected, so that abnormal parts of the wafer bonding machine, which cause the deformation defects in the wafer bonding structure, are obtained, and the abnormal parts are maintained and improved. The method for detecting the wafer bonding defects detects the distribution condition of the deformation defects in the wafer bonding structure, so that abnormal components of the wafer bonding machine table, which cause the deformation defects in the wafer bonding structure, can be quickly and accurately obtained, and the abnormality of batch products is avoided.

The above description is only for the purpose of describing the preferred embodiments of the present invention, and is not intended to limit the scope of the present invention, and any variations and modifications made by those skilled in the art based on the above disclosure are within the scope of the appended claims.