阅读说明：本技术 金属陶瓷模块及其制造方法、电路板模块及其制造方法 (Metallized ceramic module and its manufacturing method, circuit board module and its manufacturing method ) 是由 托马斯·戈特瓦尔德 克里斯蒂安·勒斯勒 于 2019-05-21 设计创作，主要内容包括：本发明涉及一种电力电子的金属陶瓷模块(10),金属陶瓷模块具有由陶瓷载体(14)构成的金属陶瓷基底(12),陶瓷载体具有金属顶层(16)和金属底层(18),金属陶瓷基底在金属顶层(16)和/或金属底层(18)之上或者之中接合形成框架(24)的金属层(16、18、22、23)和容纳在框架(30)中的至少一个电子构件(30),该框架用于容纳至少一个电子构件(30)。(The present invention relates to a kind of metallized ceramic module of power electronics (10), metallized ceramic module has the cermet substrate (12) being made of ceramic monolith (14), ceramic monolith has metal top layer (16) and metal back layer (18), cermet substrate on metal top layer (16) and/or metal back layer (18) or among engagement form the metal layer (16 of frame (24), 18, 22, and at least one electronic component (30) for being contained in frame (30) 23), the frame is for accommodating at least one electronic component (30).)

1. a kind of metallized ceramic module of power electronics (10), the metallized ceramic module has to be made of ceramic monolith (14) Cermet substrate (12), the ceramic monolith have metal top layer (16) and metal back layer (18), the cermet substrate On the metal top layer (16) and/or the metal back layer (18) or among with formed frame (24) metal layer (16, 18,22,23) and at least one electronic component (30) engagement that is contained in the frame (30) in, the frame is for accommodating extremely A few electronic component (30).

2. metallized ceramic module (10) according to claim 1, wherein the frame is formed in the metal top layer (16) Or among the metal back layer (18), and/or wherein, the frame, which is formed in, is applied to the metal top layer (16) or institute It states among the metal layer (22,23) on metal back layer (18).

3. metallized ceramic module (10) according to claim 1 or 2, wherein form the metal of the frame (24) The thickness (d22) of layer (22) corresponds essentially to the thickness (d30) of the electronic component (30), or wherein, the frame (24) depth corresponds essentially to the thickness (d30) of the electronic component (30).

4. a kind of method of the metallized ceramic module (10) for manufacturing power electronics, the method have follow steps:

The cermet substrate (12) being made of ceramic monolith (14) is provided, the ceramic monolith has metal top layer (16) and gold Belong to bottom (18)；

The frame for accommodating at least one electronic component (30) is formed among or on metal layer (16,18,22,23) (24)；

By the way that at least one described electronic component (30) is placed on the mode in the frame (24), assemble described at least one Electronic component (30)；

Engage the sequence of layer (SL) formed in this way.

5. according to the method described in claim 4, wherein, the step of engagement includes sintering, welding, Diffusion Welding or similar Technique.

6. method according to claim 4 or 5, wherein before the assembly the step of, by the metal top layer (16) And/or metal back layer (18) structuring.

7. the method according to any one of claim 4 to 6, wherein in the metal top layer (16) or the metal bottom The frame (24) are formed among layer (18).

8. method according to any one of claims 4 to 7, wherein in the metal top layer (16) or the metal Applied on bottom (18) or the metal layer to be applied (22,23) among form the frame (24).

9. according to the method described in claim 8, wherein, being applied on the cermet substrate (12) in the metal layer Before, the metal layer (22,23) engages with the electronic component (30) being assembled.

10. the method according to any one of claim 4 to 9, wherein, will be by AVT material before the assembly the step of Layer (20,21) made of expecting is applied to the metal top layer (16) and/or the metal back layer (18) and/or the metal layer On (22,23) and/or the electronic component (30).

11. method of the one kind for manufacturing circuit board module (60), the circuit board module, which has, to be integrated according to claim 1 To the metallized ceramic module (10) of power electronics described in any one of 3, the method is had follow steps:

The circuit board pedestal (40) made of the circuit board carrier material (42) for covering copper when necessary, the circuit board pedestal tool are provided There is at least one space part (48) of the metallized ceramic module (10) for accommodating at least one power electronics；

Will the circuit board be packed into the metallized ceramic module (10) of the power electronics of any one of 4 manufactures according to claim 1 In space part (48) described at least one of pedestal (40)；

In order to form the metal outer with bottom when necessary at top, insulating layer (50,54) and at least one metal film are placed (56,57)；

Thus obtained layer structure is suppressed, so that the insulating layer liquefies, and at least one space part (48) In gap (59) between the metallized ceramic module (10) of the power electronics of loading and at least one electronic component (30) filling liquid resin in the gap (g) between the frame (24) of the metal layer (22).

12. according to the method for claim 11, wherein the thickness (d40) of the circuit board pedestal (40) essentially corresponds to In the thickness (dKS) of the cermet substrate (12), the metal top layer (16) or the metal back layer are considered when necessary (18) structuring.

13. according to the method for claim 12, wherein the thickness for the first insulating layer (50) that selection is formed with frame form (d50), so that the thickness (d40) of the circuit board pedestal (40) is substantially matched to the metallized ceramic module in terms of thickness (10) total height (d10).

14. according to the method for claim 11, wherein the thickness (d40) of the circuit board pedestal (40) essentially corresponds to Thickness (d10) in the metallized ceramic module (10).

15. method described in any one of 1 to 14 according to claim 1, wherein the step of suppressing and being subsequently cured it Afterwards, the electronic component (30) and the built-in metal layer (22,

18,44) on generate plated-through hole (V1, V2, V3, V4).

16. a kind of circuit board module (60), the circuit board module has electricity according to any one of claim 1 to 3 The metallized ceramic module (10) of power electronics, the metallized ceramic module are embedded into the circuit board module (60) by laminating technology Circuit board pedestal (40) space part (48) in, and the metallized ceramic module by plated-through hole (V1, V2, V4) with At least one metal outer (56,57) of the circuit board module (60) contacts.

17. circuit board module (60) according to claim 16, wherein the thickness (d40) of the circuit board pedestal (40) The thickness (dKS) for corresponding essentially to cermet substrate (12), considers the metal top layer (16) or the metal when necessary The structuring of bottom (18), or wherein, the thickness (d40) of the circuit board pedestal (40) corresponds essentially to the metal pottery The thickness (d10) of ceramic former block (10).

Technical field

The present invention relates to the field of the cermet substrate of power electronics, and the electricity of more particularly, to Electrical and Electronic The cermet substrate of road or module.The invention further relates to the circuit board modules of the metallized ceramic module with integrated power electronics Block.

Background technique

According to the prior art, cermet substrate, particularly for the circuit of Electrical and Electronic or the cermet of module Substrate especially as the circuit board for this circuit or module is known in various embodiments.

10 2,016 214 607 A1 of DE discloses a kind of electric power electronic module, by having the semiconductor element of insertion First layer complex and engaged with first layer complex, flat second layer complex constitute, second layer complex design For ceramic bases and for the heat dissipation of first layer complex.

10 2,016 106 137 A1 of DE discloses a kind of electronic equipment shell comprising as at least one semiconductor Ceramic DCB (directly engagement copper) layer of the carrier of chip.The semiconductor chip includes at least one engagement pad, is set over contact pads There is osculating element, and be equipped with dielectric layer on semiconductor chip and contact element, applies encapsulating material again on the dielectric layer.

It is also known that so-called " DCB method " (DCB: directly engagement copper), is used for metal layer or sheet metal (such as copper sheet or copper foil) is connect with ceramics or ceramic layer.For manufacturing the DCB method of so-called DCB substrate for example from US 3, 744,120,2 319 854 2 213 115 0 153 618 A1 and 10 2,010 049 499 A1 of DE of A, EP of A1, DE of DE In it is known.

Summary of the invention

It proposes according to the present invention as a result: there is the metallized ceramic module of the power electronics of the feature of claim 1 and have The method of the feature of claim 4 and feature with claim 11 for manufacture with the power electronics integrated The method of the circuit board module of metallized ceramic module and feature with claim 16 have integrated power electronics The circuit board module of metallized ceramic module.

Basic conception of the invention is: a kind of metallized ceramic module for being embedded into board structure of circuit is provided, so as to It is formed as follows the circuit board module for high voltage applications, i.e., the shape among or on the metal layer of cermet substrate At the frame for accommodating at least one electronic component, and after assemble at least one electronic component, engagement is thusly-formed Sequence of layer.

In scope of the invention, term " frame " is understood to the sky designed for accommodating electronic component in the metal layer Gap portion (therefore frame is metal framework).The size of space part is matched with the size of electronic component for this receiving.According to The thickness of metal layer, space part can form and (have the coherent opening across metal layer) coherent frame or (as metal Recess portion in layer) incoherent frame.

" engagement (Fuegen) " indicates: using according to standard DIN 8580 (one the (the 4th in the main grouping of six manufactures It is a)) manufacturing technology, two or more solids are enduringly connected with geometrically determining moulding using the main grouping of manufacture (engagement).Here, also using so-called " amorphous materials " sometimes, shape is not limited.Each manufacture is grouped in standard DIN It is determined in more detail in 8593.Most important one is especially welded and is brazed and bond.Under existing conditions, especially It considers sintering, welding, Diffusion Welding or similar technique as feasible joint technology.

Here, cermet substrate is understood to any ceramic monolith with metal top layer and metal back layer, The ceramic monolith that especially covers copper, such as DCB substrate (DCB: direct copper bonding).Skill of this substrate for field of power electronics Art personnel are known.

Electronic component for equipping cermet substrate can be, for example, power semiconductor, chip, bare chip, crystal Pipe, transistor is, for example, FETs (field effect transistor), MOSFETs (Metal Oxide Semiconductor Field Effect Transistor), IGBTs (insulated gate bipolar transistor) or the like.

In scope of the invention, circuit board module is understood essentially to mean that any layer structure of circuit board form, It can be used independently as the module for interconnection on circuit board, such as cooling element, moreover it is possible to as setting for embedding The intermediate products (semi-finished product) entered in bigger circuit board use.

The method that the present invention provides the saving of the metallized ceramic module for manufacturing power electronics, the metallized ceramic module are made Being independent component can easily and with small expense be pressed onto board structure of circuit.It proves advantageously: boring according to the present invention Hole need not pass through ceramic body.In addition, uniform pressure is applied in lamination process by the metal framework for surrounding electronic component Onto ceramic body, to reduce the danger for damaging ceramic monolith in lamination process.In addition, the presence of metal framework causes more preferably Heat dissipation.

The present invention is especially suitable for high voltage applications, and the good connection for having started ceramic body and radiator is feasible Property.In addition, the present invention can by simple method and in a manner of realize as advantageous symmetrical layer structure.Advantage is: being used for The blind hole of contact member can be mounted in same level, and therefore can be avoided the blind hole metallization of different depth It is difficult.The present invention provides a kind of layer of structures, due to being carried between electronic component and opposite metal outer using ceramics Body and provide electrical isolation and good heat-conductive characteristic.

Other advantages of the invention and embodiment are provided by the description and the appended drawings.

It should be appreciated that features described above and the feature that will be explained below can not only use in the combination illustrated respectively, moreover it is possible to It is used in other combinations or individually scheme, without departing from the scope of the present invention.

Detailed description of the invention

The present invention with reference to the accompanying drawings shown in embodiment schematically illustrated, and below with reference to the accompanying drawings in detail Explanation.

Fig. 1 shows the ceramet group of the starting point as metallized ceramic module of the invention using horizontal section schematic diagram Bottom；

Fig. 2 shows by cermet substrate after metal top layer structuring, from Fig. 1；

Fig. 3 shows cermet substrate after the metal top layer that AVT material is applied to structuring, from Fig. 2；

Fig. 4 shows cermet after being applied with the electronic component of frame and placement in the frame, from Fig. 3 Substrate；

Fig. 5 shows the sequence of layer for having markd tangent line IV-IV from Fig. 4's and in the plan view；

Fig. 6 shows the metallized ceramic module obtained by engaging the sequence of layer from Fig. 4；

Fig. 7 shows the other embodiments (gold of metallized ceramic module with symmetrical layer structure, from Fig. 6 Belonging on bottom has additional metal layer)；

Fig. 8 shows the first step that the metallized ceramic module of Fig. 6 is introduced to circuit board pedestal with horizontal section schematic diagram；

Fig. 9 shows the circuit board module obtained by suppressing the sequence of layer with prepreg and copper foil from Fig. 8 Block；

Figure 10 shows circuit board module from Fig. 9, with the plated-through hole on electronic component and built-in layers of copper Block；

Figure 11 shows the variation side of the circuit board module of the metallized ceramic module according to the present invention with symmetrical lamination Case；

It is that Figure 12 shows the circuit board module according to the present invention with symmetrical lamination but have beyond surrounding metal frame Another change programme of the electronic component of frame；

Figure 13 shows ceramic monolith and frame metal layer, circuit board module according to the present invention with other size Another change programme of block；

Figure 14 shown using horizontal section schematic diagram the starting point of the optinal plan as metallized ceramic module of the invention, Other cermet substrate；

Figure 15 shows the cermet substrate from Figure 14, have as the frame for accommodating electronic component, The recess portion of merging；

Figure 16 shows cermet substrate with the electronic component being packed into, from Figure 15.

Specific embodiment

The same or similar element appended drawing reference having the same in attached drawing.

The method of showing for Fig. 1 to Fig. 7 metallized ceramic module 10 according to the present invention, for manufacturing power electronics Feasible sequence.Need herein it is once more emphasized that: this is the sequence of layer that high-level schematic and not to scale (NTS) are shown, only For illustrating sequence according to the method for the present invention.In particular, as long as in the de-scription without other embodiments, diagram is not applicable In the size for deriving each layer or thickness relationship.

Fig. 1 shows cermet substrate 12 with horizontal section schematic diagram comprising has metal top layer 16 and metal bottom The ceramic monolith 14 of layer 18.Metal top layer 16 and metal back layer 18 are for example especially layers of copper.This cermet substrate for example can Enough (referring to the embodiment in the specification of front) is obtained as so-called DCB (DCB: direct copper bonding) substrate.This field Technical staff for example considers AL₂O₃, ALN (aluminium nitride) or other common compounds are as ceramic material.The thickness of ceramics Degree is typically about 100 μm to about 1000 μm, and the thickness of metal layer is generally also between about 100 μm to about 1000 μm.

In next step, metal top layer 16 and/or metal back layer 18 can be structured with mode in a known way, with Just conductive path or conductive structure (such as by etching or the common method of other skilled in the art) are formed.Shown Embodiment in, in order to illustrate only by a part of structuring of metal top layer 16.It proposes: with identical with metal top layer 16 Mode is formed or nanostructured metal bottom 18, if Fig. 2 is to as demonstrated in Figure 7.Thereby, it is possible to will be in layer and ceramics The stress being likely to occur between layer minimizes, and maximizes the leakage path between potential.

Fig. 3 show by the layer 20 being made of AVT (AVT: construction and interconnection technique) material be applied to metal top layer 16 it Afterwards, sequence of layer from Fig. 2.Herein relate to support the material of subsequent joint technology, DIN standard definition side before indicating " amorphous materials " in face.This connecting material is provided in scope of the invention, be, for example, sintered paste (Ag, CuSn), Solder, diffusion solder or the like.It is used as the alternative solution of the scheme shown in figure being applied on metal layer AVT material can be applied on the back side or bottom side of electronic component and/or metal framework 22/24 to be equipped with.If necessary It realizes symmetrical layer structure, then corresponding AVT layer 21 can also be applied on metal back layer 18 (referring also to Fig. 7).

Then, metal layer 22 (especially layers of copper) is applied to metal top layer 16 and AVT layer 20 in the conceived case Upper (referring to fig. 4).According to the present invention, layers of copper/metal layer 22 is formed as frame 24, which shows for accommodating at least one The space part of electronic component 30.According to the present invention, frame 24 can have multiple such space parts for accommodating multiple electricity Sub- component；In principle also it can be considered that, two or more electronic components are alternatively, or in addition to encased in frame In 24 single space part.The space part of frame 24 is used to form for example, by punching press, etching or other skilled in the art Known mode is made.As the supplement or substitution of the AVT layer 20 described, can by adhesion promotor and other be suitble to AVT material be applied to it is metal layer 16,18,22,23 or electronic component 30, all on metal coverings to be joined.

Fig. 4 shows the electronic component 30 in the frame 24 for having been loaded into layers of copper 22, be, for example, chip, transistor or Analog.The order of assembly is variable, therefore can apply first layers of copper 22 before component 30 is encased in space part, Or apply frame 24 and component 30 during once-through operation.Certainly it is also envisioned that change programme be: first application component 30 and then apply frame 24.

Fig. 5 shows the sequence of layer SL of the formation from Fig. 4 and about copper frame 24 and loading component 30 therein (slightly reducing) plan view.The tangent line IV-IV of label corresponds to the sectional view of Fig. 4.

From the diagram one side of Fig. 4 and Fig. 5 it can be seen that layers of copper 22 and frame 24 thickness d 22 is corresponding to component 30 thickness d 30 or height.On the other hand it can be seen that spacing or gap g between component 30 and circular frame 24. These spacing g is derived from following situation, i.e. external dimensions of the inside dimension of frame space part slightly larger than the component being housed to.

According to AVT layer 20 and layers of copper 22 between the bottom side of electronic component 30, the spacing of label, it is only necessary to explanation Be: there is no fixed connections herein, but layers of copper 22 and component 30 is only used only.Certainly, spacing is in fact not present herein.

After the subsequent process steps for the sequence of layer SL that engagement so generates, as shown in fig. 6, generating the sequence of equipment Arrange SL according to restriction, fixed and lasting connection, form the metallized ceramic module 10 of power electronics according to the present invention. The scheme having been carried out as before, is engaged in the manner known to persons skilled in the art with method, such as by being sintered, welding It connects, Diffusion Welding or similar technique are implemented.Such as from Fig. 6 figure it can be seen that electronic component 30 with around its frame 24 it Between, the gap g that has described still (at least partly) exists after successfully engaging.

Fig. 7 shows the optional sequence of layer SL before engagement step, and wherein AVT layer 21 is applied to metal back layer 18 On, be disposed with metal layer or preferred layers of copper 23 again on the AVT layer, the AVT layers in subsequent engagement step with metal Bottom 18 is permanently connected.Optionally, layers of copper 23 can be similarly formed as the frame for accommodating electronic component (not shown), from And realize full symmetric sequence of layer.

It is that the characteristic of the metallized ceramic module 10 of power electronics made according to the present invention is in addition to apply and formed The metal layer 22,23 of frame, the frame is for accommodating at least one electronic component 30.10 table of metallized ceramic module so generated Show intermediate products or semi-finished product, is arranged for being embedded into board structure of circuit to form circuit board module.

The manufacturing sequence of circuit board module according to the present invention is shown in Fig. 8 to Figure 12.

Fig. 8 illustrates how metallized ceramic module 10 (herein: the metallized ceramic module of Fig. 6) according to the present invention introducing electricity In the hardened structure in road, so that circuit board module according to the present invention is formed as semi-finished product.

The circuit board pedestal made of circuit board carrier material 42 (such as FR4 (epoxide resin material)) is provided first 40.As in the illustrated embodiments, pedestal 40 can be, for example, carrier material 42 that is coating metal or covering copper.Copper portion is covered by pushing up The layers of copper 44 in portion and the layers of copper 46 of bottom form.Circuit board carrier material 42 has for accommodating at least one metallized ceramic module , at least one perforative space part 48.Metallized ceramic module 10 is loaded into space part 48.For this purpose, pedestal 40 (FR4 frame) It can for example be arranged on so-called pressed sheet, pedestal preferably has film/separation membrane of insertion, to prevent in subsequent compacting The liquefied resin of period outflow.

Circuit board pedestal 40 has thickness d 40 or height, corresponds essentially to ceramic substrate and (considers metal roof when necessary Layer or metal back layer structuring) thickness d KS or height (referring to Fig. 6).

Be applied on circuit board pedestal 40 and metallized ceramic module 10 e.g. multiple insulating layers 50 of prepreg, 54.First insulating layer or prepreg 50 are used to carry out height to the pedestal 40 with whole higher metallized ceramic module 10 Compensation, and there is notch 52 thus, so that the first prepreg 50 can surround the structure of copper frame 22 and be contained in it In component 30 structure place.It is achieved in altimetric compensation.However, it is contemplated that subsequent laminating technology, the thickness of insulating layer Be generally selected to it is slightly thicker so that the thickness d 40 of pedestal 40 and the thickness d 50 of the first prepreg 50 are only slight beyond metal The total height d10 (d40+d50 >=d10) of ceramic module 10.

Apply other continuous second prepreg 54 on resulting substantially flat surface, followed by copper film 56.In principle, other than known and prepreg that is being proved, other insulation with or without glass fabric Layer is also suitable for the technique.For example, can obtain dry resin layer on film at present, resin layer also has prepreg special Property, it especially liquefies and is subsequently cured in pressing and heating.

Then, the layer structure obtained in this way by method known to those skilled in the art and in a manner of be pressed or be laminated, Thus the resin of prepreg 50,54 is liquefied, and in the gap 49 being placed between metallized ceramic module 10 and pedestal 40, And enter particularly into the gap g between component 30 and copper frame 22, and therefore generate it is according to the present invention have it is integrated/ The circuit board module 60 of the metallized ceramic module of the power electronics of insertion, blocking basic structure (referring to Fig. 9).

When resin 58 liquefied during lamination is pressed/is laminated and after with after-hardening, with those skilled in the art The method and mode known generate gold from the copper outer layer at top generated by metal film 56 or ceramic membrane, circuit board module 60 Categoryization through-hole V1, V2, V3, such as the drilling by forming blind hole (laser drill) mode, so that the metallized ceramic module of insertion The electronic component 30 of 10 pedestal of circuit board in other words 40 and built-in layers of copper 22,24 contact (referring to Figure 10).

Herein it is pointed out that Figure 10 shows the interchangeable embodiment of the circuit board module 60 relative to Fig. 9, Middle circuit board pedestal 40 has significantly larger thickness d 40 (being obtained by thicker layers of copper 44,46 significant on carrier material 42), This corresponds essentially to the total height d10 of the metallized ceramic module 10 of insertion.In this case, it can save described above , the first prepreg 50 cut for altimetric compensation.Then only one or multiple continuous prepregs 54 are placed, Its thickness and resin content are measured, to provide enough resins to fill all gaps and the cavity during lamination.

In two change programmes of Fig. 9 and circuit board module according to the present invention 60 shown in Fig. 10, the metal of insertion The metal back layer 18 of ceramic module 10 forms the metal outer of bottom, so as to provide the possibility for being directly connected to radiator herein Property.Those skilled in the art are certainly known: before this connection, the electricity that may reveal resin is cleaned during laminating technology The bottom side of road plate module.

Figure 11 shows another change programme of circuit board module 60 according to the present invention, with symmetrical layer knot Structure, wherein other insulating layer or prepreg 59 and 57/ copper film of metal film are introduced under circuit board pedestal 40, with Form the metal outer of bottom.Therefore, metallized ceramic module using the resin layer 58 being placed under or over board structure of circuit, 59 are completely embedded into or are placed among board structure of circuit.Accordingly, similar to the embodiment of Figure 10, plated-through hole V4 is also the bottom of by The formation of metal outer 57 in portion, to be contacted with inner metallic layer 18.Metal layer 44 and 46 can be used for low electricity in this configuration The electric current of sense conducts.In this case, select the thickness of insulating layer 59 of bottom to meet insulating requirements relative to radiator, Then the radiator will be installed at (bottom) metal outer 57.

Figure 12 shows another change programme of circuit board module 60 according to the present invention, equally has in conjunction with Figure 11 Described, symmetrical layer structure and the corresponding plated-through hole V4 in bottom.It is different from described embodiment so far It is: in the change programme in Figure 12, forms the design of layers of copper 22 of the frame 24 for accommodating electronic component 30 with smaller Thickness d 22 (i.e. d22 < d30).Therefore, the electronic component 30 of loading protrudes past its circular frame 24 to a certain extent.This Cause: corresponding plated-through hole V2 must be designed deeper to contact with copper internal layer 22, as illustrated in the diagram of fig. 12.Example Such as, in the case that the outer layer at top there are higher insulating requirements, this design with smaller frame thickness can be selected Scheme.Insulating layer is relatively thin (referring to the figure of Figure 10 and Figure 11), at high voltage applications (about 5kV to 10kV or higher) In, in the desired application of circuit board module according to the present invention, as shown, in order to increase insulating layer, circuit board module Select when necessary thinner, to reduce or eliminate the danger of high-voltage breakdown.If the metal layer 44,46 of pedestal will carry height Pressure, then these considerations also can be used in the design scheme (namely reduction d40) of pedestal 40 when necessary.

It is only exemplary by the contact of plated-through hole shown in Figure 10 to Figure 12 or through-hole V1 to V4, and And can by those skilled in the art according to specific shape requirement or board design according to their professional judgement/assessment It is formed.Therefore, unshowned contact for example can also carry out downwards via copper frame, and/or in the attached drawing of circuit board pedestal 40 In figure in the region in left side, copper internal layer 44 can be attached with the top side of component 30.If electronic component 30 is crystal Pipe (grid connection be not shown), then shown in connection can be, for example, source electrode connection and drain electrode connection.

Then, in order to illustrate Figure 13 shows the metallized ceramic module of the power electronics according to the present invention with insertion , another change programme of circuit board module 60 according to the present invention, ceramic monolith 14 with it is described before and shown in Change programme, which is compared, has smaller thickness, and the metal layer 22 for forming frame 24 is obviously designed to be thicker.In the variation of Figure 13 In scheme, the frame 24 for accommodating electronic component 30 is not designed to continuously, but is only designed as space part, the space part Size corresponds to the size of component.

The structure of circuit board module 60 shown in Figure 13 can be manufactured for example in the manner similar.It is optional There is the metal layer 22 of the space part used as frame 24 can equip in advance and engage electronic component 30, so as to right for ground It is applied afterwards as the prefabricated unit with component (lead frame or lead-frame packages) and is joined to ceramet group On bottom 12 (arriving corresponding AVT layers had been described as middle layer when necessary).

Show in Figure 14 into Figure 16: as other change programme, frame 24 is (similar to the embodiment concave of Figure 13 The form in portion) it is introduced into the metal top layer 16 of cermet substrate (12) to accommodate electronic component 30.For this purpose, by means of closing Technology, such as etching, milling or similar technique suitable and well known by persons skilled in the art, the generation in metal top layer 16 The recess portion (referring to Figure 14/15) of size assigned in electronic component 30 to be accommodated, the recess portion are used as accommodating electronic component 30 Frame 24 (Figure 16).

Those skilled in the art understand certainly: situation shown in Fig. 9 to Figure 13 being capable of any combination.Therefore, example It such as also can be realized the symmetrical layer structure such as in the change programme of Figure 11 and Figure 12, Huo Zhetu in the change programme of Fig. 9 12, change programme with lower frame 24 can be used in layer structure as shown in fig. 9 or 10.