阅读说明：本技术 一种沉积制备膜的方法及镀膜机 (Method for preparing film by deposition and film coating machine ) 是由 李紫茵 于 2018-05-29 设计创作，主要内容包括：本发明公开一种沉积制备膜的方法及镀膜机,该方法包括：准备基体；在采用溅射离子源在所述基体表面溅射沉积金属膜的过程中,采用辅助离子源轰击所述金属膜,以增强所述金属膜原子的表面迁移率,提高所述金属膜的致密性。本发明提供的方法和镀膜机解决了在现有的金属膜制备方案中,存在的难以制备高厚度和高密度兼备的金属膜的技术问题,提供了一种生成高厚度且高致密度的金属膜的方法及镀膜机。(the invention discloses a method for preparing a film by deposition and a film coating machine, wherein the method comprises the following steps: preparing a substrate; in the process of sputtering and depositing the metal film on the surface of the substrate by adopting a sputtering ion source, an auxiliary ion source is adopted to bombard the metal film so as to enhance the surface mobility of atoms of the metal film and improve the compactness of the metal film. The method and the film coating machine provided by the invention solve the technical problem that the metal film with both high thickness and high density is difficult to prepare in the existing metal film preparation scheme, and provide the method and the film coating machine for generating the metal film with high thickness and high density.)

1. a method of depositing a prepared film, comprising:

preparing a substrate;

And sputtering and depositing a metal film on the surface of the substrate by adopting a sputtering ion source, wherein in the process of sputtering and depositing the metal film on the surface of the substrate by adopting the sputtering ion source, an auxiliary ion source is adopted to bombard the metal film so as to enhance the surface mobility of metal film atoms and improve the compactness of the metal film.

2. The method of claim 1, wherein the metal film is an aluminum film.

3. the method of claim 1, wherein during sputter deposition of the metal film on the substrate surface using a sputter ion source:

the ion beam sputtering energy of the sputtering ion source is 10-1000eV, the sputtering angle is 0-90 degrees, and the deposition angle is 10-90 degrees;

The working pressure of the sputtering environment is 1.0 multiplied by 10 < -2 > to 5 multiplied by 10 < -2 > Pa, and the temperature of the substrate is 20 to 500 ℃.

4. the method of claim 1, wherein during sputter deposition of a metal film on the substrate surface using the sputter ion source:

the beam diameter of the sputtering ion source is 50-150 mm, the ion energy is 100-1000 eV, and the beam current density is 0.1-0.9 mA/cm 2;

The beam diameter of the auxiliary ion source is 50-100mm, the ion energy is 200-700 eV, and the beam current density is 0.2-0.6 mA/cm 2.

5. the method of claim 1, further comprising, prior to said sputter depositing a metal film on said substrate surface using a sputter ion source:

And cleaning the surface of the substrate by ion beam bombardment by using the auxiliary ion source.

6. The method of claim 5, wherein said bombarding cleans said substrate surface, comprising:

And the time for bombarding and cleaning the surface of the substrate is 1-20 min.

7. The method of any of claims 1-6, further comprising, prior to the sputter depositing a metal film on the substrate surface using a sputter ion source:

and drawing a vacuum to enable the substrate, the sputtering ion source and the auxiliary ion source to be positioned in a vacuum environment.

8. The method of any of claims 1-6, further comprising:

and monitoring the thickness of the deposited metal film by using a crystal oscillator in the process of sputtering and depositing the metal film on the surface of the substrate by using a sputtering ion source.

9. A coating machine is characterized by comprising:

A target platform;

A table, which can fix a substrate;

the sputtering ion source is used for bombarding the target platform and sputtering and depositing a metal film on the surface of the substrate through sputtering of the target platform;

and the auxiliary ion source is used for bombarding the metal film in the process of sputtering and depositing the metal film by the sputtering ion source so as to enhance the surface mobility of atoms of the metal film and improve the compactness of the metal film.

10. the coater of claim 9 wherein during sputter deposition of a metal film on said substrate surface using said sputter ion source:

the ion beam sputtering energy of the sputtering ion source is 10-1000eV, the sputtering angle is 0-90 degrees, and the deposition angle is 10-90 degrees;

the working pressure of the sputtering environment is 1.0 multiplied by 10 < -2 > to 5 multiplied by 10 < -2 > Pa, and the temperature of the substrate is 20 to 500 ℃.

11. The coater of claim 9 wherein during sputter deposition of a metal film on said substrate surface using said sputter ion source:

The beam diameter of the sputtering ion source is 50-150 mm, the ion energy is 100-1000 eV, and the beam current density is 0.1-0.9 mA/cm 2;

The beam diameter of the auxiliary ion source is 50-100mm, the ion energy is 200-700 eV, and the beam current density is 0.2-0.6 mA/cm 2.

12. the coater of claim 9 further comprising:

And the vacuum extraction module is used for extracting vacuum so that the substrate, the sputtering ion source and the auxiliary ion source are positioned in a vacuum environment.

13. The coater of claim 9 further comprising:

And the crystal oscillator is used for monitoring the thickness of the metal film deposition.

Technical Field

the invention relates to the technical field of metal film preparation, in particular to a method for preparing a film by deposition and a film coating machine.

Background

Metal films have many applications in both semiconductor devices and optical devices, and are used mainly to alter the path of light or to receive optical signals, such as transmitting telescopes, high efficiency light emitting diodes or space satellite reflectors.

At present, the main preparation methods of metal films include an electron gun evaporation technology and an ion beam sputtering coating technology, wherein a film with a columnar microstructure is obtained by the traditional electron gun evaporation technology, the stacking density of the film is about 0.7 at room temperature, and pores of the columnar structure in the film can adsorb water vapor in the atmosphere, so that the original refractive index and optical thickness are changed to influence the stability of the optical film, and thus, the higher the density of the metal film is, the better the optical stability is. In the conventional ion beam sputtering coating technology, taking aluminum film preparation as an example, high-energy ion beams generated by an Ar ion source bombard an aluminum target material placed in high vacuum, so that target material atoms are sputtered out and recombined on the surface of a substrate to form a thin film, and a metal film with higher density can be prepared by ion beam sputtering coating.

however, when a thick high-density metal film is required to be prepared, since the bonding force between the metal film and the substrate is often insufficient, even though the ion beam sputtering coating technology is adopted, the problem that the internal stress is large and the metal film is easy to crack exists, so that the metal film with high density and high thickness requirements is difficult to prepare.

therefore, the existing metal film preparation scheme has the technical problem that the metal film with both high thickness and high density is difficult to prepare.

Disclosure of Invention

The invention provides a method for preparing a film by deposition and a film coating machine, which solve the technical problem that the existing metal film preparation scheme is difficult to prepare a metal film with both high thickness and high density.

In one aspect, the present invention provides a method for depositing a prepared film, comprising:

Preparing a substrate;

and sputtering and depositing a metal film on the surface of the substrate by adopting a sputtering ion source, wherein in the process of sputtering and depositing the metal film on the surface of the substrate by adopting the sputtering ion source, an auxiliary ion source is adopted to bombard the metal film so as to enhance the surface mobility of metal film atoms and improve the compactness of the metal film.

optionally, the metal film is an aluminum film.

Optionally, in the process of sputter depositing the metal film on the surface of the substrate by using a sputter ion source: the ion beam sputtering energy of the sputtering ion source is 10-1000eV, the sputtering angle is 0-90 degrees, and the deposition angle is 10-90 degrees; the working pressure of the sputtering environment is 1.0 multiplied by 10 < -2 > to 5 multiplied by 10 < -2 > Pa, and the temperature of the substrate is 20 to 500 ℃.

optionally, in the process of sputtering and depositing the metal film on the surface of the substrate by using the sputtering ion source, the beam diameter of the sputtering ion source is 50-150 mm, the ion energy is 100-1000 eV, and the beam current density is 0.1-0.9 mA/cm 2; the beam diameter of the auxiliary ion source is 50-100mm, the ion energy is 200-700 eV, and the beam current density is 0.2-0.6 mA/cm 2.

Optionally, before the sputtering deposition of the metal film on the surface of the substrate by using the sputtering ion source, the method further comprises: and cleaning the surface of the substrate by ion beam bombardment by using the auxiliary ion source.

Optionally, the bombarding and cleaning the surface of the substrate comprises: and bombarding and cleaning the surface of the substrate for 1-20 min.

Optionally, before the sputtering deposition of the metal film on the surface of the substrate by using the sputtering ion source, the method further comprises: and drawing a vacuum to enable the substrate, the sputtering ion source and the auxiliary ion source to be positioned in a vacuum environment.

Optionally, the method further includes: and monitoring the thickness of the deposited metal film by using a crystal oscillator in the process of sputtering and depositing the metal film on the surface of the substrate by using a sputtering ion source.

in another aspect, a coater is provided, including:

A target platform;

A table, which can fix a substrate;

The sputtering ion source is used for bombarding the target platform and sputtering and depositing a metal film on the surface of the substrate through sputtering of the target platform;

and the auxiliary ion source is used for bombarding the metal film in the process of sputtering and depositing the metal film by the sputtering ion source so as to enhance the surface mobility of atoms of the metal film and improve the compactness of the metal film.

Optionally, in the process of sputter depositing a metal film on the surface of the substrate by using the sputter ion source: the ion beam sputtering energy of the sputtering ion source is 10-1000eV, the sputtering angle is 0-90 degrees, and the deposition angle is 10-90 degrees; the working pressure of the sputtering environment is 1.0 multiplied by 10 < -2 > to 5 multiplied by 10 < -2 > Pa, and the temperature of the substrate is 20 to 500 ℃.

Optionally, in the process of sputtering and depositing the metal film on the surface of the substrate by using the sputtering ion source, the beam diameter of the sputtering ion source is 50-150 mm, the ion energy is 100-1000 eV, and the beam current density is 0.1-0.9 mA/cm 2; the beam diameter of the auxiliary ion source is 50-100mm, the ion energy is 200-700 eV, and the beam current density is 0.2-0.6 mA/cm 2.

Optionally, the coating machine further includes: and the vacuum extraction module is used for extracting vacuum so that the substrate, the sputtering ion source and the auxiliary ion source are positioned in a vacuum environment.

Optionally, the coating machine further includes: and the crystal oscillator is used for monitoring the thickness of the metal film deposition.

One or more technical solutions provided in the embodiments of the present invention have at least the following technical effects or advantages:

1. According to the method and the coating machine provided by the embodiment of the application, in the process of sputtering the deposited metal film on the surface of the substrate by adopting the sputtering ion source, the metal film is bombarded by the auxiliary ion source, the surface mobility of the deposited metal atoms is enhanced by bombarding the surface layer of the growth film, the metal atom filling density is effectively improved, the metal film porosity is reduced, and the metal film density and the mechanical property under the condition of low-temperature film forming are enhanced. And by enhancing the surface mobility of metal atoms, the adhesive force between the metal film and the matrix is effectively improved, the aluminum film stress is obviously reduced, and the cracking problem caused by large internal stress is relieved, so that the metal film with high thickness and high density can be generated.

2. According to the method and the film coating machine provided by the embodiment of the application, before the sputtering ion source is adopted to sputter and deposit the metal film on the surface of the base body, the surface of the base body is bombarded and cleaned through the auxiliary ion source so as to remove impurities such as micro-dust, grease and the like on the surface of the base body, and the adhesive force between the metal film and the base body is improved. And the bombardment of the auxiliary ion source can activate the atoms on the surface of the base material, which is beneficial to depositing a compact metal film with more uniform crystal grains and smaller pores.

the foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.

drawings

In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and those skilled in the art can also obtain other drawings according to the drawings without creative efforts.

FIG. 1 is a diagram illustrating steps in a method for depositing a prepared film in an embodiment of the invention;

FIG. 2 is a graph showing the results of XRD tests in an example of the present invention;

FIG. 3 is an SEM image of a 5um thick aluminum film taken at 20 ten thousand times magnification in accordance with an embodiment of the present invention;

FIG. 4 is an SEM image of a 5um thick aluminum film magnified 50 ten thousand times in an embodiment of the present invention;

FIG. 5 is an SEM image of an aluminum film with a thickness of 10um magnified 20 ten thousand times in an embodiment of the present invention;

FIG. 6 is an SEM image of an aluminum film with a thickness of 10um magnified 50 ten thousand times in an embodiment of the present invention;

FIG. 7 is a schematic structural diagram of a coater according to an embodiment of the present invention;

FIG. 8 is a graph of RBS analysis results in an embodiment of the present invention.

Detailed Description

The embodiment of the application provides a method for preparing a film by deposition and a film coating machine, solves the technical problem that the existing metal film preparation scheme is difficult to prepare a metal film with both high thickness and high density, and provides a method for generating a metal film with high thickness and high density and a film coating machine.

The technical scheme in the embodiment of the application has the following general idea:

In the process of sputtering and depositing the metal film on the surface of the substrate by adopting a sputtering ion source, an auxiliary ion source is adopted to bombard the metal film so as to enhance the surface mobility of atoms of the metal film and improve the compactness of the metal film. Namely, the surface mobility of deposited metal atoms is enhanced through the auxiliary bombardment on the surface layer of the growing film, the filling density of the metal atoms is effectively improved, the void degree of the metal film is reduced, and the density and the mechanical property of the metal film under the condition of low-temperature film forming are enhanced. And by enhancing the surface mobility of metal atoms, the adhesive force between the metal film and the matrix is effectively improved, the aluminum film stress is obviously reduced, and the cracking problem caused by large internal stress is relieved, so that the metal film with high thickness and high density can be generated.

in addition, in order to realize good performance of the metal film, before the sputtering ion source is adopted to sputter and deposit the metal film on the surface of the base body, the surface of the base body is bombarded and cleaned by the auxiliary ion source so as to remove impurities such as micro-dust, grease and the like on the surface of the base body, and the adhesive force between the metal film and the base body is improved. And the bombardment of the auxiliary ion source can activate the atoms on the surface of the base material, which is beneficial to depositing a compact metal film with more uniform crystal grains and smaller pores.

In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, but not all, embodiments of the present invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.