阅读说明：本技术 一种气相沉积装置、方法及显示装置 (Vapor deposition device and method and display device ) 是由 邓永 于 2020-07-02 设计创作，主要内容包括：本申请实施例提供一种气相沉积装置、方法及显示装置,气相沉积装置包括基板,所述基板中设置有绝缘隔离板,所述绝缘隔离板将所述基板分割为至少两个沉积区域,各个所述沉积区域的基板独立的连接射频电源,各个所述射频电源可分别调节电流大小。本申请通过调节不同沉积区域的射频电源大小,从而实现对成膜均匀性的控制和改善。(The embodiment of the application provides a vapor deposition device, a vapor deposition method and a display device, wherein the vapor deposition device comprises a substrate, an insulating isolation plate is arranged in the substrate, the insulating isolation plate divides the substrate into at least two deposition areas, the substrate of each deposition area is independently connected with a radio frequency power supply, and the radio frequency power supply can respectively adjust the current. According to the method and the device, the sizes of the radio frequency power supplies in different deposition areas are adjusted, so that the control and improvement on the film forming uniformity are realized.)

1. A vapor deposition apparatus, comprising: the substrate is divided into at least two deposition areas by the insulating partition board, the substrate of each deposition area is independently connected with a radio frequency power supply, and the radio frequency power supplies can respectively adjust the current.

2. The vapor deposition apparatus of claim 1, wherein the deposition areas are arranged in an array, and the deposition areas are one of rectangular and square.

3. The vapor deposition apparatus according to claim 2, wherein the insulating partition plate includes a first partition plate, a second partition plate, a third partition plate, and a fourth partition plate, the first partition plate and the second partition plate are arranged in parallel, the third partition plate and the fourth partition plate are perpendicular to the first partition plate and the second partition plate and arranged in parallel, and the first partition plate, the second partition plate, the third partition plate, and the fourth partition plate divide the substrate into nine deposition regions.

4. The vapor deposition apparatus of claim 1, wherein the barrier plates comprise fifth and sixth barrier plates, the fifth and sixth barrier plates being circular, the fifth and sixth barrier plates dividing the substrate into three deposition zones.

5. The vapor deposition apparatus according to claim 4, wherein a center of the fifth barrier plate coincides with a center line of the substrate, and the sixth barrier plate is disposed outside the fifth barrier plate.

6. The vapor deposition apparatus of claim 1, wherein the substrate comprises a plurality of splice plates that are spliced to form the substrate.

7. A vapor deposition apparatus according to any of claims 1 to 6, wherein the periphery of the substrate is provided with a rim.

8. A vapor deposition apparatus according to any one of claims 1 to 6, wherein the substrate is provided with a uniform distribution of gas holes.

9. A vapor deposition method, characterized in that a film layer is produced using the vapor deposition apparatus as claimed in any of claims 1 to 8.

10. A display device manufactured by the vapor deposition method according to claim 9.

Technical Field

The application relates to the technical field of display, in particular to a vapor deposition device, a vapor deposition method and a display device.

Background

Disclosure of Invention

The embodiment of the application provides a vapor deposition device, a vapor deposition method and a display device, which can improve film forming uniformity.

An embodiment of the present application provides a vapor deposition apparatus, including: the substrate is divided into at least two deposition areas by the insulating partition board, the substrate of each deposition area is independently connected with a radio frequency power supply, and the radio frequency power supplies can respectively adjust the current.

In some embodiments, the deposition areas are arranged in an array, and the deposition areas are rectangular or square.

In some embodiments, the insulating isolation plates include a first isolation plate, a second isolation plate, a third isolation plate, and a fourth isolation plate, the first isolation plate and the second isolation plate are arranged in parallel, the third isolation plate and the fourth isolation plate are perpendicular to the first isolation plate and the second isolation plate and are arranged in parallel, and the first isolation plate, the second isolation plate, the third isolation plate, and the fourth isolation plate divide the substrate into nine deposition regions.

In some embodiments, the isolation plates include fifth and sixth isolation plates, the fifth and sixth isolation plates being circular, the fifth and sixth isolation plates dividing the substrate into three deposition regions.

In some embodiments, the center of the fifth isolation plate coincides with the center line of the base plate, and the sixth isolation plate is sleeved outside the fifth isolation plate.

In some embodiments, the substrate comprises a plurality of splice plates that are spliced to form the substrate.

In some embodiments, the periphery of the substrate is provided with a bezel.

In some embodiments, the substrate is provided with uniformly distributed pores.

The embodiment of the application also provides a vapor deposition method, and the film is produced by using the vapor deposition device.

The embodiment of the application also provides a display device which is manufactured by adopting the vapor deposition method.

The vapor deposition device comprises a substrate, wherein an insulating isolation plate is arranged in the substrate, the substrate is divided into at least two deposition areas by the insulating isolation plate, the substrate of each deposition area is independently connected with a radio frequency power supply, and the radio frequency power supplies can respectively adjust the current. According to the method and the device, the sizes of the radio frequency power supplies in different deposition areas are adjusted, so that the control and improvement on the film forming uniformity are realized.

Drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts.

Fig. 1 is a schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure.

Fig. 2 is a schematic plan view of the vapor deposition apparatus of fig. 1.

FIG. 3 is another schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure

Fig. 4 is a schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure.

Fig. 5 is a schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure.

Detailed Description

The technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. It is to be understood that the embodiments described are only a few embodiments of the present application and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.

It should be noted that in the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, which are only for convenience in describing the present application and simplifying the description, but do not indicate or imply that the referred device or element must have a specific orientation, be configured in a specific orientation, and operate, and thus, should not be construed as limiting the present application.

The embodiments of the present application provide a vapor deposition apparatus, a method and a display apparatus, and the vapor deposition apparatus will be described in detail below.

Referring to fig. 1 and fig. 2, fig. 1 is a schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure. Fig. 2 is a schematic plan view of the vapor deposition apparatus of fig. 1. The vapor deposition apparatus 100 includes a substrate 10, an insulating isolation plate 20 is disposed in the substrate 10, the insulating isolation plate 20 divides the substrate 10 into at least two deposition regions 11, the substrate 10 of each deposition region 11 is independently connected to a radio frequency power supply 30, and the radio frequency power supply 30 can adjust the current magnitude respectively.

Specifically, the insulating barrier 20 is made of a dust-free and corrosion-resistant insulating material as the insulating barrier 20. For example, the insulating isolation plate 20 is made of teflon plate. The insulating partition plate 20 partitions the substrate 10 into at least two deposition areas 11, that is, the insulating partition plate 20 may partition the substrate 10 into two, three, four or even a plurality of deposition areas 11. In addition, the deposition areas 11 divided by the insulating isolation plate 20 are independent areas, and each deposition area 11 is connected with the radio frequency power supply 30, and each radio frequency power supply 30 can adjust the current. The shape of the substrate 10 may be rectangular, square, circular, or the like.

Wherein, the deposition areas 11 are arranged in an array, and the deposition areas 11 are either rectangular or square. It should be noted that the deposition regions 11 may be arranged in a matrix array, or may be arranged in a ring array. The deposition area 11 may be rectangular or square in shape. Of course the shape of the deposition area 11 may be other shapes. Such as a parallelogram. It will be appreciated that the array of deposition regions 11 may be more convenient to adjust the thickness of each region of the film accordingly.

Referring to fig. 3, fig. 3 is another schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure, in which the insulating isolation plate 20 includes a first isolation plate 21, a second isolation plate 22, a third isolation plate 23, and a fourth isolation plate 24, the first isolation plate 21 and the second isolation plate 22 are disposed in parallel, the third isolation plate 23 and the fourth isolation plate 24 are perpendicular to the first isolation plate 21 and the second isolation plate 22 and are disposed in parallel, and the first isolation plate 21, the second isolation plate 22, the third isolation plate 23, and the fourth isolation plate 24 divide the substrate 10 into nine deposition regions 11.

The first separator 21, the second separator 22, the third separator 23, and the fourth separator 24 are sheet-like separators. In addition, the embodiment of the present invention divides the substrate 10 into nine deposition areas 11 only as an implementation manner, and the substrate 10 may be divided into more deposition areas 11 as needed, so that each area of the film layer may be adjusted more accurately.

Referring to fig. 4, fig. 4 is a schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure. Wherein the isolation plates include a fifth isolation plate 25 and a sixth isolation plate 26, the fifth isolation plate 25 and the sixth isolation plate 26 are circular, and the substrate 10 is divided into three deposition regions 11 by the fifth isolation plate 25 and the sixth isolation plate 26. The center of the fifth isolation plate 25 coincides with the center line of the substrate 10, and the sixth isolation plate 26 is sleeved on the outer side of the fifth isolation plate 25.

The fifth partition plate 25 and the sixth partition plate 26 are circular partition plates, and the radius of the sixth partition plate 26 is larger than the radius of the fifth partition plate 25. The area inside the fifth separator plate 25 is a deposition area 11, the area between the fifth separator plate 25 and the sixth separator plate 26 is a deposition area 11, and the area outside the sixth separator plate 26 is a deposition area 11. The deposition area 11 formed by the annular partition plate allows the film thickness to be adjusted for the annular area of the film.

Referring to fig. 5, fig. 5 is a schematic structural diagram of a vapor deposition apparatus according to an embodiment of the present disclosure. Wherein the substrate 10 comprises a plurality of splice plates 60, the plurality of splice plates 60 being spliced to form the substrate 10. It will be appreciated that by forming the substrate 10 from the splice 60, the shape and size of the substrate 10 can be varied as desired, enabling the vapor deposition apparatus 100 to accommodate the generation of a wider variety of film layers.

Referring to fig. 4, a frame 40 is disposed around the periphery of the substrate 10. It is understood that the peripheral edge of the substrate 10 is provided with a frame 40, and the frame 40 may define the shape formed by the film layers.

Wherein, the substrate 10 is provided with air holes 50 uniformly distributed.

The vapor deposition device of this application embodiment includes the base plate, be provided with insulating division board in the base plate, insulating division board will the base plate is cut apart into two at least deposition area, each the independent connection radio frequency power supply of deposition area's base plate, each the radio frequency power supply can adjust the electric current size respectively. According to the method and the device, the sizes of the radio frequency power supplies in different deposition areas are adjusted, so that the control and improvement on the film forming uniformity are realized.

The embodiment of the application also provides a vapor deposition method, and the film is produced by using the vapor deposition device. By using the vapor deposition device in the above embodiment, the radio frequency power supplies of the respective regions are respectively adjusted correspondingly as required, so that the uniformity of the produced film is better. Since the vapor deposition apparatus is described in detail in the above embodiments, the vapor deposition apparatus is not described in detail in the embodiments of the present application. In addition, the film layer may be a silicon dioxide film layer or the like.

The embodiment of the application also provides a display device which is manufactured by adopting the vapor deposition method.

The vapor deposition apparatus, the vapor deposition method, and the display apparatus provided in the embodiments of the present application are described in detail above, and the principles and embodiments of the present application are described herein using specific examples, which are provided only to help understanding of the present application. Meanwhile, for those skilled in the art, according to the idea of the present application, there may be variations in the specific embodiments and the application scope, and in summary, the content of the present specification should not be construed as a limitation to the present application.