阅读说明：本技术 半导体装置 (Semiconductor device with a plurality of semiconductor chips ) 是由 伊东弘晃 市仓优太 渡边尚威 田多伸光 平塚大祐 田代匠太 水谷麻美 关谷洋纪 久里 于 2018-08-08 设计创作，主要内容包括：半导体装置具备并联连接的多个半导体元件单元。半导体元件单元包括：第一金属部件；第二金属部件,与所述第一金属部件对置；至少一个半导体元件,配置于所述第一金属部件与所述第二金属部件之间；树脂部件,在所述第一金属部件与所述第二金属部件之间密封所述半导体元件；强化部件,以包围所述第一金属部件与所述第二金属部件的方式设置,且比所述树脂部件的强度高。(The semiconductor device includes a plurality of semiconductor element units connected in parallel. The semiconductor element unit includes: a first metal member; a second metal member opposed to the first metal member; at least one semiconductor element disposed between the first metal member and the second metal member; a resin member that seals the semiconductor element between the first metal member and the second metal member; and a reinforcing member that is provided so as to surround the first metal member and the second metal member and has a higher strength than the resin member.)

1. A semiconductor device includes a plurality of semiconductor element units connected in parallel,

the semiconductor element unit includes:

a first metal member;

a second metal member opposed to the first metal member;

at least one semiconductor element disposed between the first metal member and the second metal member;

a resin member that seals the semiconductor element between the first metal member and the second metal member; and

and a reinforcing member provided so as to surround the first metal member and the second metal member, the reinforcing member having a higher strength than the resin member.

2. The semiconductor device as set forth in claim 1,

the reinforcing member includes a metal.

3. The semiconductor device as set forth in claim 2,

the semiconductor device further includes another resin member covering the reinforcing member.

4. The semiconductor device as set forth in claim 2,

the reinforcing member is electrically connected to one of the first metal member and the second metal member.

5. The semiconductor device as set forth in claim 1,

the reinforcing member includes a ceramic.

6. The semiconductor device as set forth in claim 1,

the semiconductor device further includes a lead connected to the semiconductor element and extending and protruding from between the first metal member and the second metal member,

the reinforcing member has an open portion provided in an extending direction of the lead.

7. The semiconductor device as set forth in claim 1,

the reinforcing member has an opening that partially exposes one of the first metal member and the second metal member.

8. The semiconductor device as set forth in claim 1,

the semiconductor element has a first electrode and a second electrode disposed on the opposite side of the first electrode,

the first metal member is connected to the first electrode, and the second metal member is connected to the second electrode.

9. The semiconductor device as set forth in claim 8,

the first metal member has a convex portion connected to the first electrode.

10. The semiconductor device as set forth in claim 1,

the resin member is filled in a space between the first metal member and the second metal member, and also filled in a space between the reinforcing member and the first metal member and a space between the reinforcing member and the first metal member.

Technical Field

Background

There are semiconductor devices in which a large current of several kiloamperes (kA) can be switched by connecting a plurality of semiconductor elements in parallel. Further, by connecting a plurality of semiconductor devices in series, a power converter that operates at a high voltage of several kilovolts (kV) can be configured. Such a power conversion device preferably has redundancy in that even if a short-circuit failure occurs in one of the series-connected semiconductor devices, the remaining semiconductor devices can continue to operate. Therefore, an explosion-proof structure capable of avoiding explosive breakage at the time of short-circuiting of the semiconductor device is required, but it is difficult to realize at low cost. In addition, miniaturization of the power conversion device is also an obstacle.

Disclosure of Invention

Problems to be solved by the invention

Drawings

Fig. 1 is a schematic cross-sectional view showing a semiconductor device according to a first embodiment.

Fig. 2 is a perspective view schematically showing a semiconductor element module according to the first embodiment.

Fig. 3 is a schematic cross-sectional view showing a semiconductor element module according to the first embodiment.

Fig. 4 is another schematic cross-sectional view showing the semiconductor element module according to the first embodiment.

Fig. 5 is a schematic cross-sectional view showing a semiconductor device according to a second embodiment.

Fig. 6 is a perspective view schematically showing a semiconductor element module according to a second embodiment.

Fig. 7 is a schematic cross-sectional view showing a semiconductor element module according to a third embodiment.

Fig. 8 is another schematic cross-sectional view showing a semiconductor element module according to a third embodiment.

Fig. 9 is a schematic cross-sectional view showing a semiconductor element module of a comparative example.

Embodiments relate to a semiconductor device.