Component carrier for carrying electronic components and method for manufacturing component carrier
阅读说明:本技术 承载电子部件的部件承载件及制造部件承载件的方法 (Component carrier for carrying electronic components and method for manufacturing component carrier ) 是由 汉内斯·施塔尔 于 2015-12-16 设计创作,主要内容包括:承载电子部件的部件承载件及制造部件承载件的方法。该部件承载件包括:至少部分电绝缘的芯;嵌入在芯中的至少一个电子部件;以及具有至少一个导电直通连接件的耦接结构,该至少一个导电直通连接件至少部分地延伸穿过耦接结构并且具有部件接触端和接线接触端,其中该至少一个电子部件与部件接触端直接电接触,其中耦接结构的至少外表面部分具有均匀消蚀特性并且被图案化以具有表面凹部,该表面凹部被填充有导电接线结构,并且其中接线接触端与接线结构直接电接触,并且其中至少一个导电直通连接件包括至少一个柱状物。(A component carrier carrying electronic components and a method of manufacturing the component carrier. The component carrier includes: an at least partially electrically insulating core; at least one electronic component embedded in the core; and a coupling structure having at least one electrically conductive through-connection extending at least partially through the coupling structure and having a component contacting end and a wire contacting end, wherein the at least one electronic component is in direct electrical contact with the component contacting end, wherein at least an outer surface portion of the coupling structure has uniform ablation properties and is patterned to have a surface recess filled with an electrically conductive wire structure, and wherein the wire contacting end is in direct electrical contact with the wire structure, and wherein the at least one electrically conductive through-connection comprises at least one pillar.)
1. A component carrier (100) for carrying electronic components (104), wherein the component carrier (100) comprises:
an at least partially electrically insulating core (102);
at least one electronic component (104) embedded in the core (102);
a coupling structure (106, 202) having at least one electrically conductive through-connection (108) extending at least partially through the coupling structure and having a component contact end (112) and a wiring contact end (114);
wherein the at least one electronic component (104) is in direct electrical contact with the component contacting end (112);
wherein at least an outer surface portion of the coupling structure (106, 202) has uniform ablation properties and is patterned to have surface recesses which are filled with electrically conductive wiring structures (110);
wherein the wiring contact end (114) is in direct electrical contact with the wiring structure (110); and
wherein the at least one electrically conductive through-connection (108) comprises at least one pillar.
2. The component carrier (100) according to claim 1, embodied as a circuit board, in particular a printed circuit board; a substrate; and one of the interposers.
3. The component carrier (100) according to claim 1 or 2, wherein the electronic component (104) is selected from the group consisting of active electronic components and passive electronic components, in particular one of an electronic chip, a memory device, a filter, a sensor, an actuator, a micro-electro-mechanical system, a microprocessor, a capacitor, a resistor, an inductance, a battery and a logic chip.
4. The component carrier (100) according to any of claims 1 to 3, wherein the electrically insulating material of the core (102) comprises a resin, in particular a bismaleimide-triazine resin; glass fibers; a prepreg material; a polyimide; a liquid crystalline polymer; an epoxy-based laminate film; and FR4 material.
5. The component carrier (100) according to any of claims 1 to 4, wherein at least the outer surface portion of the coupling structure (106, 202) is made of a material free of glass fibers.
6. The component carrier (100) according to any of claims 1 to 5, wherein at least the outer surface portion of the coupling structure (106, 202) comprises a pure resin; a palladium-doped resin; copper oxide doped resins; and a photoresist, particularly a permanent resist.
7. The component carrier (100) according to any of claims 1 to 6, wherein the pillar is a cylindrical pillar.
8. The component carrier (100) according to any of claims 1 to 7, wherein an outer surface of the wiring structure (110) is substantially flush with an outer surface of the outer surface portion of the coupling structure (106, 202).
9. The component carrier (100) according to any of claims 1 to 8, comprising at least one further electrically conductive wiring structure (116) on a main surface (118) of the component carrier (100), which main surface is opposite to a further main surface (120) of the component carrier, the outer surface portion of the coupling structure (106, 202) and the wiring structure (110) being located at the further main surface (120).
10. The component carrier (100) according to any of claims 1 to 9, comprising an adhesive structure (400) covering at least a part of an interface between the coupling structure (106, 202) and the at least one electronic component (104) embedded in the core (102).
11. The component carrier (100) according to any of claims 1 to 10, wherein at least one of the wiring structure (110) and the at least one electrically conductive through-connection (108) comprises or is constituted by at least one of copper, aluminum and nickel.
12. The component carrier (100) according to any of claims 1 to 11, wherein the at least one electrically conductive through-connection (108) comprises a plurality of columns aligned parallel to each other.
13. The component carrier (100) according to any of claims 1 to 12, wherein a lateral dimension (D) of the at least one electrically conductive through-connection (108) is wider than a lateral dimension (D) of the wiring structure (110); or the lateral dimension (D) of the at least one electrically conductive through-connection (108) is substantially equal to the lateral dimension (D) of the wiring structure (110).
14. The component carrier (100) according to claim 1, wherein the at least one column has a polygonal cross-section, in particular a rectangular cross-section.
15. The component carrier (100) according to any of claims 1 to 14, wherein the wiring structure (110) is a laser grooved copper filled trace.
16. The component carrier (100) according to any of claims 1 to 15, wherein the length of the at least one electrically conductive through-connection (108) is longer than the length of the wiring structure (100).
17. The component carrier (100) according to any of claims 1 to 16, wherein the electronic component (104) comprises an electrical contact, and wherein the component contacting end (112) is directly connected with the electrical contact.
18. The component carrier (100) according to claim 17, wherein a lateral dimension of the electrical contact is wider than a lateral dimension (D) of the at least one electrically conductive through-connection (108); or the lateral dimension of the electrical contact is substantially equal to the lateral dimension (D) of the at least one conductive through-connection (108).
19. The component carrier (100) according to claim 17, wherein the length of the at least one electrically conductive through-connection (108) is longer than the length of the electrical contact.
20. The component carrier (100) according to any of claims 1 to 19, wherein a transverse dimension (D) of a trace of the wiring structure (110) is narrower than a transverse dimension (D) of the at least one electrically conductive through-connection (108).
21. The component carrier (100) according to any of claims 1 to 19, wherein a lateral dimension (D) of a trace of the wiring structure (110) is wider than a lateral dimension (D) of the at least one electrically conductive through-connection (108).
22. The component carrier (100) according to any of claims 1 to 21, wherein the at least one electrically conductive through-connection (108) has a cylindrical shape with an aspect ratio larger than 1.
23. The component carrier (100) according to any of claims 1 to 22, wherein the coupling structure (106, 202) comprises a separate coupling body (106) or the coupling structure (106, 202) is constituted by a separate coupling body (106), in particular the separate coupling body (106) is a prefabricated separate coupling body.
24. A method of manufacturing a component carrier (100) for carrying electronic components (104), wherein the method comprises:
embedding at least one electronic component (104) in an at least partially electrically insulating core (102);
providing a coupling structure (106, 202) having at least one electrically conductive through-connection (108) extending at least partially through the coupling structure and formed with a component contact end (112) and a wiring contact end (114);
bringing the at least one electronic component (104) into direct electrical contact with the component contacting end (112);
providing at least an outer surface portion of the coupling structure (106, 202) with uniform ablation properties;
patterning the outer surface portion to form a surface recess;
filling the surface recess with an electrically conductive wiring structure (110) such that the wiring contact end (114) is in direct electrical contact with the wiring structure (110).
25. The method of claim 24, wherein the method comprises: connecting the at least one electronic component (104) to at least a portion of the coupling structure (106, 202) prior to embedding the at least one electronic component (104) in the core (102).
26. The method of claim 24 or 25, wherein the method further comprises:
providing a soft adhesive structure (400) between the at least one electronic component (104) and the at least one component contact end (112) at the exposed surface of the coupling structure (106, 202); and
-pressing the at least one electronic component (104) and at least a part of the coupling structure (106, 202) together, thereby pressing the soft adhesive away from a contact area between the component contacting end (112) and an electrical contact (160), in particular a protruding electrical contact, of the at least one electronic component (104).
27. The method of any one of claims 24 to 26, wherein the method further comprises: the surface recess is formed by at least one of laser drilling and etching, in particular by at least one of photolithographic etching and reactive ion etching.
28. The method of any of claims 24 to 27, wherein the method further comprises:
forming at least one containment volume within the core (102);
-housing the at least one electronic component (104) in at least a part of the at least one housing volume; and
connecting the core (102) with the at least one electronic component (104), in particular by pressing.
29. The method of any one of claims 24 to 28, wherein the method comprises: -embedding the wiring structure (110) completely within the surface portion of the coupling structure (106, 202) without protruding beyond the surface portion.
30. The method according to any one of claims 24 to 29, wherein the patterning and the filling are performed such that the wiring structure (110) is directly electrically connected to the at least one wiring contact end (114) of the at least one electrically conductive through-connection (108) exposed by the patterning.
31. The method of any one of claims 24 to 30, wherein the surface recesses formed by the patterning are filled by electroless deposition of a conductive material followed by galvanic deposition of a further conductive material.
32. The method according to any of claims 24 to 31, comprising polishing at least the exposed surface portion of the coupling structure (106, 202) together with the exposed wiring structure (110), in particular by chemical mechanical polishing.
33. The method of any one of claims 24 to 31, wherein the method comprises:
attaching a conductive mask layer (802) and a photoresist layer (804) on the outer surface portion of the coupling structure (106, 202);
patterning the photoresist layer (804) and the conductive mask layer (802) to expose a portion of the outer surface portion of the coupling structure (106, 202);
-removing material of the exposed portion of the outer surface portion of the coupling structure (106, 202) thereby exposing at least a part of the at least one wire contacting end (114), in particular by laser treatment;
the surface recess thus formed is filled with a conductive material, in particular by an electroless deposition process followed by a galvanic deposition process, thereby forming the wiring structure (110).
34. The method of claim 33, wherein the method further comprises removing the photoresist layer (804) and the conductive mask layer (802) after the filling.
35. The method of claim 33 or 34, wherein the method does not comprise: the exposed surface is polished after the filling, in particular without chemical mechanical polishing.
36. The method of any of claims 24 to 33, wherein the method comprises providing the at least one electronic component (104) and at least a portion of the coupling structure (106, 202) as a monolithically integrated structure within a common semiconductor substrate.
37. A component carrier (100) for carrying electronic components (104), wherein the component carrier (100) comprises:
an at least partially electrically insulating core (102);
at least one electronic component (104) embedded in the core (102);
a coupling structure (106, 202) having at least one electrically conductive through-connection (108) extending at least partially through the coupling structure and having a component contact end (112) and a wiring contact end (114);
wherein the at least one electronic component (104) is in direct electrical contact with the component contacting end (112);
wherein at least an outer surface portion of the coupling structure (106, 202) has uniform ablation properties and is patterned to have surface recesses which are filled with electrically conductive wiring structures (110);
wherein the connection contact (114) is in direct electrical contact with the connection structure (110),
wherein the dielectric material of the coupling structure (106, 202) comprises a matrix and filler particles embedded in the matrix,
wherein the material of the matrix and the material of the filler particles together define the uniform ablation characteristic of the outer surface portion of the coupling structure (106, 202).
38. The component carrier (100) according to claim 37, wherein the filler particles are selected from the group consisting of: beads, in particular glass spheres; and an organic fiber.
39. A component carrier (100) for carrying electronic components (104), wherein the component carrier (100) comprises:
an at least partially electrically insulating core (102);
at least one electronic component (104) embedded in the core (102);
a coupling structure (106, 202) having at least one electrically conductive through-connection (108) extending at least partially through the coupling structure and having a component contact end (112) and a wiring contact end (114);
wherein the at least one electronic component (104) is in direct electrical contact with the component contacting end (112);
wherein at least an outer surface portion of the coupling structure (106, 202) has uniform ablation properties and is patterned to have surface recesses which are filled with electrically conductive wiring structures (110);
wherein the connection contact (114) is in direct electrical contact with the connection structure (110), and
wherein the component carrier comprises at least one of the following features:
wherein the coupling structure (106, 202) comprises a combination of a coupling body (106) and a coupling layer (202) arranged at least partially on the coupling body (106),
or the coupling structure (106, 202) is constituted by a combination of a coupling body (106) and a coupling layer (202) arranged at least partially on the coupling body (106);
wherein an electrical interface between the at least one electronic component (104) and the at least one electrically conductive through-connection (108) is redistribution-layer-free;
wherein the at least one electronic component (104) and at least a portion of the coupling structure (106, 202) are integrally formed in a semiconductor substrate.
Technical Field
The invention relates to a component carrier and a method of manufacturing a component carrier.
Background
In the context of the ever increasing product functionality of component carriers equipped with one or more embedded electronic components and the ever increasing miniaturization of such electronic components and the increasing number of electronic components to be mounted on and/or in component carriers such as printed circuit boards, increasingly more powerful array-like components or packages with several electronic components are being employed, which have a plurality of contacts or connections, wherein the spacing between these contacts is ever decreasing. Therefore, contacting embedded electronic components as well as surface mounted electronic components is becoming more challenging. At the same time, the component carrier should be mechanically robust in order to be able to operate even under severe conditions.
Disclosure of Invention
It is an object of the invention to provide a component carrier with embedded electronic components that can be contacted in a simple and reliable manner.
In order to achieve the object defined above, a component carrier and a method of manufacturing a component carrier are provided as follows.
According to an exemplary embodiment of the invention, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; a coupling structure having at least one electrically conductive through-connection extending at least partially through the coupling structure and having a component contacting end and a wire contacting end; wherein the at least one electronic component is in direct electrical contact with the component contacting end; wherein at least an outer surface portion of the coupling structure has uniform ablation properties and is patterned to have surface recesses that are filled with electrically conductive wiring structures; wherein the wiring contact end is in direct electrical contact with the wiring structure; and wherein the at least one conductive through-connection comprises at least one pillar.
According to an exemplary embodiment of the invention, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; a coupling structure having at least one electrically conductive through-connection extending at least partially through the coupling structure and having a component contacting end and a wire contacting end; wherein the at least one electronic component is in direct electrical contact with the component contacting end; wherein at least an outer surface portion of the coupling structure has uniform ablation properties and is patterned to have surface recesses that are filled with electrically conductive wiring structures; wherein the wire contact end is in direct electrical contact with the wire structure, wherein the dielectric material of the coupling structure comprises a matrix and filler particles embedded in the matrix, wherein the material of the matrix and the material of the filler particles together define the uniform ablation properties of the outer surface portion of the coupling structure.
According to an exemplary embodiment of the invention, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; a coupling structure having at least one electrically conductive through-connection extending at least partially through the coupling structure and having a component contacting end and a wire contacting end; wherein the at least one electronic component is in direct electrical contact with the component contacting end; wherein at least an outer surface portion of the coupling structure has uniform ablation properties and is patterned to have surface recesses that are filled with electrically conductive wiring structures; wherein the wiring contact end is in direct electrical contact with the wiring structure, and wherein the component carrier comprises at least one of the following features: wherein the coupling structure comprises or consists of a combination of a coupling body and a coupling layer arranged at least partially on the coupling body; wherein an electrical interface between the at least one electronic component and the at least one through-connection is free of a redistribution layer; wherein the at least one electronic component and at least a portion of the coupling structure are integrally formed in a semiconductor substrate.
According to an exemplary embodiment of the invention, a component carrier for carrying electronic components is provided, wherein the component carrier comprises: an at least partially electrically insulating core; at least one electronic component embedded in the core; and a coupling structure having at least one electrically conductive through-connection extending at least partially through the coupling structure and having a component contacting end and a wire contacting end, wherein the at least one electronic component is in direct electrical contact with the component contacting end (i.e. no other member between them), wherein at least an outer surface portion of the coupling structure has uniform ablation properties and is patterned to have a surface recess filled with an electrically conductive wire structure, and wherein the wire contacting end is in direct electrical contact with the wire structure (i.e. no other member between them).
According to another exemplary embodiment of the present invention, a method of manufacturing a component carrier for carrying electronic components is provided, wherein the method comprises: embedding at least one electronic component in an at least partially electrically insulated core; providing a coupling structure having at least one electrically conductive through-connection extending at least partially through the coupling structure and formed with a component contact end and a wiring contact end; bringing the at least one electronic component into direct electrical contact with the component contacting end; providing at least an outer surface portion of the coupling structure with uniform ablation properties; patterning the outer surface portion to form a surface recess; and filling the surface recess with an electrically conductive wiring structure such that the wiring contact end is in direct electrical contact with the wiring structure.
In the context of the present application, the term "coupling structure" may particularly denote a partially electrically insulating structure with one or more integrated electrically conductive through-connections. Such a coupling structure may be configured as a coupling body, which may be provided separately from the at least partially electrically insulated core, and may be a preformed or prefabricated member or intermediate structure for bringing pads (or other electrical contacts) of the electronic component into direct contact with the outer component carrying surface of the component carrier. In another embodiment, the coupling structure is formed by a coupling body of the above-described type in combination with a coupling layer which also contributes to the electrical coupling of the embedded electronic component.
In the context of the present application, the term "through connection" may particularly denote an electrically conductive structure providing an electrical contact between a solder pad (or another electrical contact) of the embedded electronic component and an outer component carrying surface of the component carrier. The component carrying surface of the component carrier may be a surface suitable for surface mounting one or more electronic components such as semiconductor chips. Such through-connections may extend substantially or completely perpendicular to the opposite main surfaces or component-carrying surfaces of the component carrier.
In the context of the present application, the term "uniform ablation properties" of an outer surface portion of a coupling structure may particularly denote that, at least in this portion exposed to the environment, the material composition is of a type in which the surface material consists of one (particularly dielectric) material or of a combination of several dielectric and/or conductive materials, such that when applying an ablation process to this surface portion, this material can be removed at a constant ablation rate. Such an ablation rate may be a parameter indicative of the amount of material removed per unit time during which an ablation process, in particular a laser ablation process or an etch ablation process, is enabled. For example, when applying laser ablation, the application of the laser beam will cause material to be removed from the surface portion of the coupling structure at a uniform or constant ablation rate. The uniform ablation properties can be achieved, for example, by: in such a way that a surface portion of a single material, such as pure resin, is formed, instead of for example a mixture of resin and glass fibres. In the latter resin and glass fiber example, uniform ablation characteristics cannot be achieved because the ablation rate of the glass fibers is significantly less than the ablation rate of the resin material.
According to an exemplary embodiment of the present invention, a very advantageous contact architecture for directly contacting one or more embedded electronic components is provided, which is based on a coupling structure having its component contacting ends directly attached on one or more pads (or other electrical contacts) of an electronic component, such as a semiconductor chip. The through-connection preferably extends vertically through the coupling structure and serves as a conductive bridge for achieving electrical contact between the soldering pads of the electronic component and the wiring structure by contacting the wiring structure at the wiring contact ends. By forming the exposed surface portion of the coupling structure from a material having uniform ablation properties, then a simple ablation process allows flexibility in designing any desired wiring structure as an external wiring pattern in the surface portion of the circuit structure to provide contact with the (e.g. still buried) wiring contact end of the at least one through-connection. With such a contact architecture, a superfine wire connection may be provided when interconnecting one or more embedded electronic components with an outer surface of the component carrier (or with one or more further electronic components surface mounted on such an outer surface of the component carrier). By using at least one through-connection that is contacted via dedicated ablation of an outer surface portion of the coupling structure having uniform ablation properties, the one or more embedded electronic components may be directly contacted without the need for cumbersome redistribution layers. Such component interconnection techniques allow for low-footprint (land) or substantially low-footprint interconnection of electronic components to component carriers, such as patterned layers of printed circuit boards. This may advantageously allow for ultrafine scribing with a slot/plating process. Thus, a new type of first level interconnection of electronic components can be achieved.
In the following, further exemplary embodiments of the component carrier and of the method of manufacturing a component carrier will be explained.
In an embodiment, at least an outer surface portion of the coupling structure is made of a material free of glass fibers. Thus, the surface portion may be neither prepreg nor FR4 (both of which have glass fibers), wherein prepreg or FR4 would deteriorate the desired uniform ablation properties of the coupling structure. By providing that the outer surface portion of the coupling structure is made of a material free of glass fibres, more particularly that the entire electrically insulating material of the coupling structure is made of a material free of glass fibres, it is ensured that the dimensional definition of the wiring structure is accurate and small, which is not disturbed by areas with poor, spatially varying or undefined ablation properties.
In an embodiment, at least the outer surface portion of the coupling structure comprises at least one of the group consisting of: pure resins, resins doped with palladium, resins doped with copper oxide and photoresists. These materials are particularly preferred examples providing substantially uniform ablation properties, but still compatible with printed circuit board technology, are preferred examples for component carriers.
Furthermore, when materials such as a palladium-doped resin or a copper oxide-doped resin are used, electroless plating can be selectively started efficiently on these materials (as an initial process for forming the wiring structure), so that electroless plating of a metal material on other surface portions of the component carrier can be effectively suppressed. This may advantageously make a polishing process unnecessary.
In an embodiment, the at least one through-connection comprises at least one column, in particular at least one cylindrical column and/or a plurality of columns aligned parallel to each other. Such pillars may be conductive pillars extending through the coupling structure and providing contact between the electronic component and the wiring structure. In particular, the pillars may have a circular cross-section, or alternatively a polygonal (e.g. rectangular) cross-section. By arranging the pillars arranged, for example, in a matrix, a user is provided with a desired wiring structure that matches at least one embedded electronic component and makes contact in a dedicated manner via the pattern of the pillars with a high degree of freedom.
In one embodiment, the outer surface of the wiring structure is flush with the outer surface of the outer surface portion of the coupling structure. Correspondingly, the wiring structure may be completely embedded within the surface portion of the coupling structure without protruding beyond the surface portion. In other words, the outer surface portion of the wiring pattern and the outer surface portion of the coupling structure may form a common planar surface without significant topology, so that the wiring structure may even be structurally integrated into the outer surface portion of the coupling structure without protruding therefrom. Thus, the wiring structure is safely protected from damage during use.
In an embodiment, the component carrier comprises at least one further electrically conductive wiring structure on a main surface of the component carrier, which main surface is opposite to the outer surface portion of the coupling structure and the other main surface of the component carrier where the wiring structure is located. Thus, both opposite main surfaces of the component carrier can be configured according to the wiring technique according to an exemplary embodiment of the present invention, wherein the respective wiring structure is formed by: in such a way that material is ablated from the corresponding surface portion having uniform ablation properties, followed by filling the correspondingly formed recess or groove with conductive material. Thus, a space-saving and thin-line wiring structure can be applied on both opposite main surfaces of the component carrier or on only one main surface of the component carrier.
In an embodiment, the component carrier comprises an adhesive structure (in particular a cured or hardened adhesive) at least partially between the coupling structure and the at least one electronic component embedded in the core. Correspondingly, the method may further include: forming a soft adhesive structure between the at least one electronic component and the at least one component contact end located at the exposed surface of the coupling structure; and connecting (in particular pressing) the at least one electronic component and the coupling structure together, thereby pressing the soft adhesive away from the contact area between the component contacting end and the at least one electronic component (in particular away from the protruding pads of the electronic component). The (cured or hardened) adhesive material of the finished component carrier between the coupling structure and the embedded electronic component may result from an advantageous manufacturing process, wherein the electronic component is adhered to the component carrying surface of the coupling structure by the adhesive material before embedding the electronic component into the core. The adhesive material may be applied as a layer of soft adhesive material between the coupling structure and the electronic component, such that after pressing the electronic component and the coupling structure against each other, the adhesive material will be pressed away from the slightly protruding contacts or pads of the electronic component. Thereby, a proper electronic coupling between the electronic component and the at least one through-connection is ensured, while also providing a robust mechanical connection between the coupling structure and the electronic component to be embedded.
In an embodiment, at least one of the wiring structure and the at least one through-connection comprises or is constituted by at least one of the group consisting of copper, aluminum and nickel. In particular, copper is preferred, since it is fully compatible with printed circuit board technology, wherein the component carrier is manufactured according to the preferred embodiment in accordance with printed circuit board technology. Using only a single metal provides simple manufacturability while preventing problems with different conductive materials, such as contact resistance effects, different thermal expansion, etc.
In an embodiment, the dielectric material of the coupling structure comprises a matrix and filler particles embedded in the matrix, wherein the material of the matrix and the filler particles has uniform ablation properties. The use of filler particles has the advantage that the properties of the coupling structure can be precisely controlled. For example, such filler particles may affect the thermal conductivity of the material of the coupling structure, the ablation capability, the capability of depositing thereon a material other than electrical conductivity, and the like.
In one embodiment, the filler particles are selected from the group consisting of beads (such as spheres, e.g. glass spheres) and organic fibers. In contrast to glass fibers, glass spheres or other shaped beads sized small enough do not significantly change the ablation properties compared to the matrix material (such as resin), but still allow for improved structural integrity of the component carrier. Furthermore, the organic fibers may be designed to have substantially the same ablation properties as the matrix.
In an embodiment, a lateral dimension (such as a width) of the trace of the wiring structure is narrower than a lateral dimension (such as a diameter) of the at least one through-connection. Since the width of the wiring structure can be defined by an ablation process such as mechanical drilling or laser ablation, the size of the wiring structure can be made very small. Therefore, in this case, the through-connection serves as an adaptation structure for adapting the size of the wiring structure to the size of the pad of the electronic device. Therefore, the connection technology according to an exemplary embodiment of the present invention is compatible with a very small-sized wiring structure.
In an embodiment, a lateral dimension (such as a width) of the trace of the wiring structure is wider than a lateral dimension (such as a diameter) of the at least one through-connection. In this alternative embodiment, the dimensions of the wiring pattern may even be laterally larger than the dimensions of the through-connection. This may be advantageous in embodiments where the components mounted on the outer main surface of the component carrier require relatively large sized wiring structures.
In an embodiment, at least one through-connection has a cylindrical shape with an aspect ratio greater than 1. In particular, the aspect ratio of the through-connection, i.e. the ratio between the length in the vertical direction and the diameter in the horizontal direction, may be larger than 1.5 or even larger than 2. Thus, electronic components which are even deeply embedded or embedded in the interior of the component carrier can be connected precisely by the through connection.
In an embodiment, the method includes connecting the at least one electronic component to the coupling structure prior to embedding the at least one electronic component in the core. Thus, prior to the integral arrangement of the coupling structure, the coupling structure may first be electrically and mechanically connected to the electronic component to be embedded, and then the electronic component may be inserted into the correspondingly shaped recess of the core to complete the embedding. Thus, with this technique it is possible to contact the embedded electronic components with less effort.
In an embodiment, the method further comprises forming the surface recess (for defining the wiring structure) by laser drilling. Laser drilling, which is considered particularly suitable for forming any desired wiring structure, can be easily adapted to a specific application by merely defining the trajectory along which a laser beam operates on an exposed surface portion of the coupling structure having uniform ablation properties. The two opposite main surfaces of the component carrier can be machined simultaneously or in succession by such a laser ablation process.
In another embodiment, the method comprises a second step of forming surface recesses (for defining wiring structures) by etching, in particular by photolithographic etching and/or by using reactive ion etching. According to such architectures, the surface material may be patterned by etching to define the wiring pattern.
As a further alternative, the wiring pattern in the exposed surface portion with uniform ablation properties may be accomplished in another way, for example by mechanical drilling or by embossing.
In one embodiment, the method further comprises: forming at least one containment volume (volume) within the core (such as a blind hole); accommodating at least one electronic component (and optionally at least a part of the contact structure) in the at least one accommodation volume; and connecting the core with the at least one electronic component (e.g. by pressing, alternatively by adhering). Such a receiving volume may be formed by etching or stamping a foil of prepreg material or the like, wherein after etching or stamping one or more such pre-processed foils may be used for embedding the electronic component in the corresponding receiving volume.
In an embodiment, the interface (i.e. the connection area) between the at least one electronic component and the at least one through-connection is free of a redistribution layer (RDL). Thus, by not providing a redistribution layer between the electronic component and the coupling structure, a simple connection may be achieved with a compact design. It may be advantageous when the copper pillar and the dielectric (see reference numeral 106) end at the same level, as shown in fig. 4. This can be achieved in a simple manner by: after wafer-level copper pillar bumping, the wafer may be coated with a dielectric and mechanically ground to expose the pillars. The planar member is in direct contact with the dielectric for laser grooving.
In an embodiment, the at least one electronic component and at least a part of the coupling structure are integrally formed, in particular integrally formed in a semiconductor substrate (such as a silicon wafer). Correspondingly, the method may further include disposing at least one electronic component and at least a portion of the coupling structure as a monolithically integrated structure within a common semiconductor substrate. In other words, the electronic component and at least a portion of the coupling structure may form a common wafer. Thus, the at least one through-connection may directly contact the at least one integrated circuit element of the electronic component to be embedded. Both the through-connections and the circuit elements may be surrounded by the semiconductor material of the common substrate. Thus, the electrical and mechanical interface between the wiring structure and the integrated circuit element of the electronic component to be embedded can be formed with semiconductor technology.
In an embodiment, the patterning and filling are performed such that the wiring structure is directly electrically connected to the at least one wiring contact end of the at least one through-connection exposed by the patterning. A low-footprint or substantially low-footprint connection is thus possible, which simplifies the connection process and makes the resulting component carrier compact.
In one embodiment, the surface recesses formed by patterning are filled by electroless deposition (electroless deposition) of a conductive material followed by galvanic deposition of additional conductive material. Thus, a metal layer may be deposited first, followed by galvanic deposition of further metal material to further (in particular completely) fill the recess for forming the wiring structure. This combination of two deposition processes allows for the fabrication of robust and reliable wiring structures.
In one embodiment, the method comprises: after the wiring structure has been formed by deposition, at least the exposed surface of the coupling structure is polished together with the exposed wiring structure, in particular by Chemical Mechanical Polishing (CMP). After the previously described two-stage wiring structure formation process (in particular by electroless plating and electroplating), it may occur that the correspondingly machined outer surface of the component carrier is non-planar or uneven and that the electrically conductive material is also located in undesired locations. The chemical mechanical polishing process can ensure that planarity is achieved while having a wiring structure that is precisely defined in space.
In an embodiment, the method includes attaching a conductive mask layer (e.g., a copper film) and a photoresist layer on an outer surface portion of the coupling structure (particularly on an outer coupling layer of the coupling structure). The method may further include patterning the photoresist layer and the conductive mask layer to expose a portion of an outer surface portion of the coupling structure (particularly a surface portion of the coupling structure at which the wiring structure is to be formed). Then, the material of the previously exposed portion of the outer surface portion of the coupling structure may be selectively removed (in particular by laser treatment or etching) so as to expose at least a portion of the at least one wire contacting end of the at least one through-connection. Subsequently, the surface recess thus formed can be filled (in particular partially) with an electrically conductive material, so that a connection structure is formed which is in contact with the exposed at least one connection contact. In particular, such a formation of the wiring structure may be performed by an electroless deposition process followed by an electro-current deposition process. The material of the coupling layer (e.g., a palladium-doped resin) may be selected such that electroless deposition of the metallic material will occur primarily or only on the exposed surfaces of the patterned coupling layer (and not, for example, on the photoresist layer). Advantageously, a metal mask layer may be used to apply a voltage during the galvanic deposition process.
Still referring to the previously described embodiments, the method may further include removing the photoresist layer and the conductive mask layer after the filling. Then, the manufacture of the component carrier may be completed. By such a process, the chemical mechanical polishing process described above with reference to another embodiment can be omitted, which further simplifies the manufacturing process.
Preferably, however, the component carrier is configured as a circuit board, in particular as one of the group consisting of a printed circuit board, a substrate and an interposer. Other types of circuit boards may also be implemented.
In the context of the present application, a "printed circuit board" (PCB) may denote a board (in particular made of a composite of glass fibers and resin) having an electrically insulating core covered by an electrically conductive material and conventionally used to carry thereon one or more electronic components (such as packaged electronic chips, sockets, etc.) to be electrically coupled by means of the electrically conductive material. More specifically, PCBs may mechanically support and electrically connect electronic components using conductive traces, pads, or other features etched from a metal structure, such as a copper sheet, laminated on a non-conductive substrate. The PCB may be single-sided (i.e. may have only one of its main surfaces covered by a metal layer, in particular a patterned metal layer), double-sided (i.e. may have both of its two opposite main surfaces covered by a metal layer, in particular a patterned metal layer) or of the multilayer type (i.e. also has one or more metal layers, in particular patterned metal layers, in its interior). The conductors on different layers may be connected to each other by plated through holes, which may be denoted as vias. The PCB may also include one or more electronic components, such as capacitors, resistors, or active devices, embedded in the electrically insulating core.
In the context of the present application, an "interposer" may represent an electrical interface device that routes (route) between one connector and another connector. The purpose of the interposer may be to spread the connection to a wider pitch or to reroute the connection to a different connection. One example of an interposer may be an electrical interface between an electronic chip, such as an integrated circuit wafer, and a Ball Grid Array (BGA).
In the context of the present application, a "substrate" may denote an object on which electronic components are to be mounted, for example comprising ceramic and/or glass materials.
In an embodiment, the electrically insulating material of the core comprises at least one of the group consisting of: resins, in particular bismaleimide-triazine resins; glass fibers; a prepreg material; a polyimide; a liquid crystalline polymer; epoxy-based Build-Up films (epoxy-based Build-Up films); and FR4 material. The resin material can be used as a base material having desired dielectric characteristics and being inexpensive and well suited for mass production. The glass fibers may reinforce the circuit board and may mechanically stabilize the circuit board. Furthermore, glass fibers can introduce anisotropy into the respective circuit boards, if desired. Prepreg is a suitable material for circuit boards because it is already a mixture of resin and glass fibre, which can be further processed (and in particular tempered) to convert it into a PCB-type dielectric material. FR4 is a fire resistant dielectric material for PCBs, which may be suitable for the packaging concept according to exemplary embodiments.
The embedded electronic component may particularly represent any active electronic component (such as an electronic chip, in particular a semiconductor chip) or any passive electronic component (such as a capacitor). Examples of embedded components are data memories such as DRAMs (or any other memory), microprocessors, filters (which may for example be configured as high pass filters, low pass filters or band pass filters and may for example be used for frequency filtering), integrated circuits (such as logic ICs), signal processing components (such as microprocessors), power management components, opto-electronic interface means (e.g. opto-electronic means), voltage converters (such as DC/DC converters or AC/DC converters), cryptographic means, capacitors, inductors, switches (e.g. transistor based switches) and combinations of these and other functional electronic means.
Drawings
The aspects defined above and further aspects of the invention are apparent from the examples of embodiment to be described hereinafter and are explained with reference to these examples of embodiment.
The present invention will be described in more detail below with reference to examples of embodiments, but the present invention is not limited to these examples.
Fig. 1 shows a sectional view of a component carrier according to an exemplary embodiment of the present invention.
Fig. 2 shows a sectional view of a component carrier according to another exemplary embodiment of the present invention.
Fig. 3 shows a sectional view of a component carrier according to a further exemplary embodiment of the present invention.
Fig. 4 to 7 show structures obtained during execution of a method of manufacturing a component carrier according to an exemplary embodiment of the present invention.
Fig. 8 to 12 show structures obtained during execution of a method of manufacturing a component carrier according to another exemplary embodiment of the present invention.
Fig. 13 shows a wafer comprising a plurality of structures obtained by semiconductor processing similar to that shown in fig. 4 as monolithically integrated bodies before singulation.
The illustration in the drawings is schematically. In different drawings, similar or equivalent elements are provided with the same reference numerals.
Detailed Description
Before describing exemplary embodiments in further detail with reference to the accompanying drawings, some general considerations upon which exemplary embodiments of the present invention may be developed will be presented.
According to an exemplary embodiment, an embedded component having ultra-fine line and fine pitch interconnects is provided. Such embedded component packages are particularly suitable for high voltage applications. Among other things, exemplary embodiments of the present invention have the following advantages: simple and efficient interconnect techniques to the chip are provided. Low footprint interconnects to patterned layers on the PCB are possible. In addition, the exemplary embodiments provide ultra-fine wire technology utilizing new grooving and/or plating processes. Furthermore, the exemplary embodiments enable a first level of interconnect to the chip and do not require a redistribution layer (RDL). Exemplary application areas to which exemplary embodiments are particularly applicable are embedded fan-out packages, high density embedded modules, and high density substrates (e.g., <8 μm L/S).
Fig. 1 shows a cross-sectional view of a
More specifically, fig. 1 shows a plate-
The
The
The
The dielectric outer surface portion of the coupling body 106 (i.e., the dielectric material of the
In order to make the ablation properties of the exposed dielectric material of the
Since the outer surface of the
As can also be seen from fig. 1, the
Referring to detail 170 shown in fig. 1, the width D of the trace of the
The
The interconnects of the wafer are formed by copper pillars rather than by copper pad pads. With this architecture, the ends of the copper pillars can be brought close to the surface of the PCB after embedding, for example by transfer embedding (which can be implemented in accordance with AT 514074, which is incorporated herein by reference). For transfer embedding according to an exemplary embodiment, one or more coupling structures (e.g. integrally formed with the electronic component to be embedded) may be mounted on a dimensionally stable temporary carrier and the resulting arrangement may be attached (e.g. by applying a certain pressure, preferably in a vacuum environment) to a copper foil coated with a soft resin (or a conductive wiring structure coated with any other soft adhesive). The soft adhesive may form a coupling layer of the coupling structure (see reference numeral 202). The coupling structure may have a copper pillar or any other at least one electrically conductive through-connection integrated therein. However, with this measure, the copper pillars can be in direct contact with the copper foil. After curing, the temporary support may be removed. Subsequently, the pcb-like structure can be easily manufactured using prepregs, additional copper structures, etc. By applying the latter measure, at least one partially electrically insulating core can be manufactured. For making interconnects to wiring levels or wiring structures, plated micro-vias are not required and therefore the corresponding registration (registration) process can be omitted.
For example, the wiring pattern constituting the
Registration of the groove pattern may be by optical registration with the copper pillars of the wafer and enables the grooves to be in precise registration with the copper pillars. When registration with multiple wafers on a panel is required, an adaptive imaging process can be implemented to adapt each individual wafer and its offset and skewed image to the overall image of the panel. This process enables the laser grooves to be properly registered with each wafer and form the first level interconnects to the chips.
The pattern can be completed as follows: the surfaces of the recess and the corresponding (e.g. bare epoxy) surface of the PCB are electrolessly plated, followed by water electroplating for filling the recess. Chemical Mechanical Polishing (CMP) may then be performed to remove the plated surface copper.
Prior to embedding the
Filling the recesses in the exposed surface portions of the
Fig. 2 shows a sectional view of a
The modification of the copper patterning process may be performed in the following manner: instead of using a non-glass cloth reinforcement material as the exposed dielectric material of the coupling body 106 (see fig. 1), an
A possible corresponding process flow for manufacturing the
laminating a photoresist on a thin outer layer of copper
Imaging in registration with fiducial points placed on the core
Development of the resist
Etching the exposed thin copper foil
Removing the exposed resin layer and reducing the thickness of the photoresist by a process such as plasma, RIE or excimer laser
Performing electroless plating of Pd-doped material (only or substantially only the material will be plated)
Electroplating of
Stripping the resist and developing etching the thin copper foil
A benefit of such a manufacturing method and the
For this process, at least an outer surface portion of the
Fig. 3 shows a sectional view of a
Fig. 4 to 7 show structures obtained during execution of a method of manufacturing a
Fig. 4 shows an
While the
Another way to produce the structure according to fig. 4 is:
As can be seen from fig. 5, the arrangement formed according to fig. 4 is then inserted into the receiving volume formed in the
Therefore, a housing volume for housing the
Referring to fig. 6, the structure thus obtained is then subjected to a surface ablation process, for example by laser treatment. By taking this measure, an arrangement of recesses 600 is formed in the surface portions of the two opposite
Referring to fig. 6, the method thus provides uniform ablation characteristics for at least an outer surface portion of the
In order to obtain a
Thus, the method further comprises filling the surface recess with an electrically
Fig. 8 to 12 show structures obtained during execution of a method of manufacturing a
To obtain the
Subsequently, a
To obtain the
To obtain the
To obtain the
To obtain the
Fig. 13 shows a
As can be seen from fig. 13, the
It should be noted that the term "comprising" does not exclude other elements or steps and the "a" or "an" does not exclude a plurality. Also elements described in association with different embodiments may be combined.
The practice of the invention is not limited to the preferred embodiments shown in the drawings and described above. Rather, many variations are possible using the illustrated approaches and in accordance with the principles of the invention, even in the context of disparate embodiments.
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