阅读说明：本技术 半导体装置及其制造方法 (Semiconductor device and method for manufacturing the same ) 是由 谭宝豪 于 2018-12-26 设计创作，主要内容包括：实施方式提供一种具备不良情况更少的新颖构成的半导体装置及其制造方法。实施方式的半导体装置包含：衬底,具有第一面；第一半导体元件,设置在第一面上；多个半导体元件,以局部覆盖第一半导体元件的方式设置在第一面；接着层,设置在多个半导体元件与第一面之间、及多个半导体元件与第一半导体元件之间,且具有从第一面的正交方向观察时的周缘部朝向多个半导体元件的外侧方向鼓出的膨胀部；及覆盖膜,被覆第一半导体元件及多个半导体元件。(Embodiments provide a semiconductor device having a novel structure with fewer defects, and a method for manufacturing the same. The semiconductor device of the embodiment includes: a substrate having a first side; a first semiconductor element provided on the first surface; a plurality of semiconductor elements provided on the first surface so as to partially cover the first semiconductor element; an adhesive layer provided between the plurality of semiconductor elements and the first surface and between the plurality of semiconductor elements and the first semiconductor element, and having an expanded portion that is expanded outward of the plurality of semiconductor elements from a peripheral edge portion when viewed in a direction orthogonal to the first surface; and a cover film covering the first semiconductor element and the plurality of semiconductor elements.)

1. A semiconductor device, comprising: a substrate having a first side;

a first semiconductor element provided on the first surface;

a plurality of semiconductor elements provided on the first surface so as to partially cover the first semiconductor element;

an adhesive layer provided between the plurality of semiconductor elements and the first surface and between the plurality of semiconductor elements and the first semiconductor element, and having an expanded portion that expands outward of the plurality of semiconductor elements from a peripheral edge portion of the first surface when viewed in a direction orthogonal to the first surface; and

and a cover film covering the first semiconductor element and the plurality of semiconductor elements.

2. A semiconductor device, comprising: a substrate having a first side;

a first semiconductor element provided on the first surface;

a second adhesion layer disposed over the first semiconductor element;

an interposing member disposed on the second adhesive layer;

a plurality of semiconductor elements provided on a surface of the interposing member opposite to a surface contacting the second adhesive layer;

an adhesive layer provided between the plurality of semiconductor elements and the interposing member, and having an expanded portion whose peripheral edge portion bulges in an outer direction of the plurality of semiconductor elements when viewed from a direction orthogonal to the first surface; and

and a cover film covering the plurality of semiconductor elements and the plurality of semiconductor elements.

3. The semiconductor device according to claim 1 or 2, wherein the plurality of semiconductor elements are provided with different adhesion layers interposed therebetween.

4. The semiconductor device according to claim 3, wherein the expanded portions of the different adhesion layers are in physical contact with each other without a gap on the first semiconductor element when viewed from a direction orthogonal to the first surface.

5. The semiconductor device according to claim 3, wherein the expanded portions of the different adhesion layers are separated from each other on the first semiconductor element when viewed from a direction orthogonal to the first surface.

6. The semiconductor device according to claim 4, wherein the first semiconductor element is a controller, and

the plurality of semiconductor elements are memory chips.

7. The semiconductor device according to claim 4, wherein the number of the plurality of semiconductor elements is 4.

8. A method for manufacturing a semiconductor device includes the steps of: providing a first semiconductor element on a first side of a substrate;

a plurality of semiconductor elements provided on the first surface with different adhesive layers interposed therebetween so as to partially cover the first semiconductor elements, respectively, when viewed in a direction orthogonal to the first surface;

pressing the plurality of semiconductor elements toward the first surface to bulge the peripheral edge portions of the different adhesives outward when viewed from a direction orthogonal to the first surface to form bulging portions; and

a cap film is formed to cover the plurality of semiconductor elements.

9. A method for manufacturing a semiconductor device includes the steps of: providing a first semiconductor element on a first side of a substrate;

disposing a second adhesion layer over the first semiconductor element;

disposing an interposing member on the second adhesive layer;

providing the plurality of semiconductor elements with different adhesive layers interposed therebetween on a surface of the interposing member opposite to a surface contacting the second adhesive layer, so as to partially cover the first semiconductor element when viewed from a direction orthogonal to the first surface;

pressing the plurality of semiconductor elements toward the first surface, and forming an expanding portion by outwardly expanding a peripheral edge portion of the different adhesive when viewed from a direction orthogonal to the first surface; and

a cap film is formed to cover the plurality of semiconductor elements.

10. The method for manufacturing a semiconductor device according to claim 8 or 9, wherein the pressing is performed such that the expanded portions are in physical contact with each other without a gap in the first semiconductor element when viewed from a direction orthogonal to the first surface.

11. The method for manufacturing a semiconductor device according to claim 10, wherein an adhesive layer is attached to a wafer on which the semiconductor device is formed, and the wafer is divided for each adhesive layer by dicing, whereby the plurality of semiconductor elements are formed.

Technical Field

The present embodiment relates to a semiconductor device and a method for manufacturing the same.

Background

Conventionally, a semiconductor memory as a semiconductor device is known, which integrally includes a plurality of memory elements and a controller that controls reading of data from the memory elements and writing of data to the memory elements.

Disclosure of Invention

Drawings

Fig. 1 is an exemplary and schematic cross-sectional view of a semiconductor memory of embodiment 1.

Fig. 2 is an exemplary and schematic top view of the semiconductor memory of embodiment 1.

Fig. 3A to 3D are schematic cross-sectional views illustrating an example of a method for manufacturing a semiconductor memory according to an embodiment.

Fig. 4 is an exemplary and schematic top view of a semiconductor memory according to a modification of embodiment 1.

Fig. 5 is an exemplary and schematic cross-sectional view of the semiconductor memory of embodiment 2.

Fig. 6 is an exemplary and schematic cross-sectional view of the semiconductor memory of embodiment 3.

Embodiments provide a semiconductor device having a novel structure with fewer defects, and a method for manufacturing the same.