阅读说明：本技术 封装结构及其制造方法 (Package structure and method for manufacturing the same ) 是由 林南君 徐宏欣 于 2019-04-02 设计创作，主要内容包括：本发明提供一种封装结构及其制造方法。封装结构包括框架结构、晶粒、密封体以及重布线路结构。框架结构具有空腔。晶粒配置于空腔中。晶粒具有主动面、相对于主动面的背面、连接主动面与背面的多个侧边以及配置于主动面上的多个连接垫。密封体密封框架结构的至少一部分以及晶粒的侧边。重布线路结构配置于密封体与晶粒的主动面上。连接垫与重布线路结构直接接触。(The invention provides a packaging structure and a manufacturing method thereof. The package structure includes a frame structure, a die, a seal and a redistribution circuit structure. The frame structure has a cavity. The die is disposed in the cavity. The die has an active surface, a back surface opposite to the active surface, a plurality of side edges connecting the active surface and the back surface, and a plurality of connecting pads disposed on the active surface. The encapsulant encapsulates at least a portion of the frame structure and the sides of the die. The redistribution circuit structure is disposed on the active surface of the sealing body and the active surface of the die. The connecting pad is in direct contact with the redistribution circuit structure.)

1. A package structure, comprising:

a frame structure having a cavity;

a die disposed in the cavity, the die having an active surface, a back surface opposite to the active surface, a plurality of sides connecting the active surface and the back surface, and a plurality of connection pads disposed on the active surface;

a sealing body sealing at least a portion of the frame structure and the plurality of sides of the die; and

and a redistribution circuit structure disposed on the active surface of the die and the encapsulant, wherein the plurality of connection pads are in physical contact with the redistribution circuit structure.

2. The package structure of claim 1, wherein the frame structure comprises a body and a bump protruding from the body, and the body and the bump form the cavity.

3. The package structure of claim 2, wherein a portion of the seal is located between the bumps and the redistribution routing structure.

4. The package structure of claim 2, wherein the bump is in physical contact with the redistribution routing structure, and the bump includes at least one through opening having the seal filled therein.

5. The package structure of claim 2, wherein the frame structure further comprises a plurality of fins opposite the bumps.

6. The package structure of claim 2, wherein at least a portion of the seal is disposed between the sides of the die and the bumps of the frame structure.

7. The package structure of claim 2, wherein at least a portion of the seal is disposed between the backside of the die and the body of the frame structure.

8. The package structure of claim 2, further comprising:

an adhesive layer disposed between the back surface of the die and the body of the frame structure.

9. The package structure of claim 1, wherein the material of the frame structure comprises copper, a metal alloy, steel, or a combination thereof.

10. A method of manufacturing a package structure, comprising:

providing a frame structure having a cavity;

placing a die in the cavity of the frame structure, the die having an active surface, a back surface opposite to the active surface, a plurality of sides connecting the active surface and the back surface, and a plurality of connection pads disposed on the active surface;

placing a molding die having a sealing film formed thereon over the frame structure and the die;

forming a seal to seal at least a portion of the frame structure and the sides of the die; and

forming a redistribution circuit structure on the seal and the die, wherein the plurality of connection pads are in physical contact with the redistribution circuit structure.

Technical Field

The present invention relates to a package structure and a method for manufacturing the same, and more particularly, to a package structure having a frame structure and a method for manufacturing the same.

Background

In recent years, the development of semiconductor packaging technology focuses on providing products with smaller size, lighter weight, higher integration level and lower manufacturing cost. It is a challenge for those skilled in the art to keep the miniaturization of semiconductor packages while maintaining low cost processes and high performance of packaged semiconductor dies.

Disclosure of Invention

The invention provides a packaging structure and a manufacturing method thereof, which can effectively improve the reliability of the packaging structure with lower manufacturing cost.

The invention provides a packaging structure, which comprises a frame structure, a crystal grain, a sealing body and a rewiring circuit structure. The frame structure has a cavity. The die is disposed in the cavity. The die has an active surface, a back surface opposite to the active surface, a plurality of side edges connecting the active surface and the back surface, and a plurality of connecting pads disposed on the active surface. The encapsulant encapsulates at least a portion of the frame structure and the sides of the die. The redistribution circuit structure is disposed on the active surface of the sealing body and the active surface of the die. The connection pads are in physical contact with the redistribution circuit structure.

In an embodiment of the invention, the package structure further includes a plurality of conductive terminals. The conductive terminals are disposed on the redistribution circuit structure and opposite to the die.

The invention provides a manufacturing method of a packaging structure. The manufacturing method includes at least the following steps. A frame structure having a cavity is provided. Placing the die in the cavity of the frame structure. The die has an active surface, a back surface opposite to the active surface, a plurality of side edges connecting the active surface and the back surface, and a plurality of connecting pads disposed on the active surface. A molding die having a sealing film formed thereon is placed over the frame structure and the die. A seal is formed to seal at least a portion of the frame structure and the sides of the die. Forming a redistribution circuit structure on the sealing body and the die. The connection pads are in physical contact with the redistribution circuit structure.

In an embodiment of the invention, the step of placing the die in the cavity of the frame structure includes forming an adhesive layer on the back surface of the die and placing the die in the cavity of the frame structure, so that the back surface of the die is attached to the frame structure through the adhesive layer.

In an embodiment of the invention, the step of placing the molding die having the sealing film formed thereon on the frame structure and the die includes placing the molding die having the sealing film formed thereon on the active surface of the die so that the plurality of connection pads of the die are embedded in the sealing film, wherein the frame structure is separated from the sealing film.

In an embodiment of the invention, the step of forming the sealing body includes filling a sealing material into gaps among the sealing film, the frame structure and the die and curing the sealing material to form the sealing body.

In an embodiment of the invention, the step of placing the die in the cavity of the frame structure includes providing a carrier. Forming an adhesive layer on the carrier. The die is disposed on the adhesive layer with its active surface facing the carrier, wherein the bonding pads are embedded in the adhesive layer and the frame structure is disposed on the adhesive layer, such that the die is disposed in the cavity of the frame structure.

In an embodiment of the invention, the step of placing the molding die having the sealing film formed thereon on the frame structure and the die includes placing the molding die having the sealing film formed thereon on the frame structure, wherein the frame structure is in physical contact with the sealing film.

In an embodiment of the invention, the step of forming the sealing body includes filling a sealing material into a gap between the die and the frame structure and a gap between the frame structure and the adhesive layer, and curing the sealing material to form the sealing body.

In an embodiment of the invention, the manufacturing method further includes removing the adhesive layer and the carrier from the frame structure and the active surface of the die after forming the sealing body.

In an embodiment of the invention, the manufacturing method further includes patterning a surface of the frame structure opposite to the cavity to form a plurality of fins.

In an embodiment of the invention, the manufacturing method further includes forming a plurality of conductive terminals on the redistribution circuit structure corresponding to the die.

Based on the above, in the manufacturing process of the package structure, the frame structure in the package structure may serve as a carrier. Thus, the use of temporary carrier plates can be avoided. In other words, the expensive transfer bonding process performed in the conventional manufacturing process of the package structure can be eliminated to reduce the manufacturing cost. In addition, since the frame structure may be formed of a rigid material, the frame structure can provide rigidity and strength to the package structure. Thus, the problems of panel warpage and package chipping/cracking can be sufficiently prevented, thereby improving the yield and reliability of the package structure. Further, the frame structure may also provide heat dissipation and emi shielding. Therefore, the performance of the package structure can be further improved.

In order to make the aforementioned and other features and advantages of the invention more comprehensible, embodiments accompanied with figures are described in detail below.

Drawings

Fig. 1A to 1G are schematic cross-sectional views illustrating a method for manufacturing a package structure according to some embodiments of the invention;

FIG. 2 is a schematic top view of the frame structure and die of FIG. 1B;

FIGS. 3A-3G are schematic cross-sectional views illustrating a method of fabricating a package structure according to alternative embodiments of the invention;

FIG. 4 is a schematic side view of an intermediate stage of the manufacturing method as shown in FIG. 3C;

fig. 5A to 5C are schematic cross-sectional views of some steps of a method for manufacturing a package structure according to some embodiments of the invention.

Description of the reference numerals

10. 20, 30: packaging structure

100: frame structure

100 a: first surface

100 b: second surface

102: main body

104: projection

104 a: raised surface

106: fin plate

200: die

200 a: active surface

200 b: back side of the panel

200 c: side edge

210: semiconductor substrate

220: connecting pad

230: protective layer

300. 900: adhesive layer

400: molding die

410: sealing film

500: sealing material

502: sealing body

600: redistribution circuit structure

610: conductive element

612a, 612 b: line layer

614a, 614 b: internal connection structure

620. 622a, 622 b: dielectric layer

700: conductive terminal

800: support plate

C: hollow cavity

OP: through opening

Detailed Description

Reference will now be made in detail to the present preferred embodiments of the invention, examples of which are illustrated in the accompanying drawings. Identical or similar components will be shown with the same reference numerals in the figures, where possible.

Fig. 1A to 1G are schematic cross-sectional views illustrating a method for manufacturing a package structure 10 according to some embodiments of the invention. Referring to fig. 1A, a frame structure 100 is provided. The frame structure 100 has a first surface 100a and a second surface 100b opposite to the first surface 100 a. The frame structure 100 includes a body 102 and a plurality of projections 104 protruding from the body 102. For example, the protrusion 104 may protrude from the first surface 100a of the frame structure 100. In some embodiments, the body 102 and the protrusion 104 form a cavity C. For example, each protrusion 104 may form a closed loop when viewed from above, thereby defining a cavity C surrounded by the protrusions 104. In other words, the frame structure 100 has a plurality of cavities C defined by corresponding protrusions 104. In some embodiments, the protrusions 104 and the cavities C may be arranged in an array. For simplicity, only one set of protrusions 104 and cavities C are shown in fig. 1A. In some embodiments, a portion of the first surface 100a of the frame structure 100 may also be referred to as a bottom surface of the cavity C. In some embodiments, the frame structure 100 may be formed from a conductive substrate to provide isolation and protection so that it may reduce Electromagnetic Interference (EMI) and may have high strength and rigidity (stiffness) to provide structural support. In addition, the frame structure 100 may be made of a material having a low thermal capacity and a high heat dissipation property, so that the frame structure 100 may serve as a heat dissipation member to dissipate heat generated from a subsequently formed component. For example, the material of the frame structure 100 may include copper, metal alloys, steel, or other suitable materials, or combinations thereof.

Referring to fig. 1B, a die 200 is disposed in the cavity C of the frame structure 100. In some embodiments, the die 200 may be an Application-Specific Integrated Circuit (ASIC). However, the invention is not limited thereto, and other suitable devices may be used as the die 200. The die 200 includes a semiconductor substrate 210, a plurality of connection pads 220, and a passivation layer 230. The die 200 has an active surface 200a, a back surface 200b opposite to the active surface 200a, and a plurality of side edges 200c connecting the active surface 200a and the back surface 200 b. The connecting pads 220 are disposed on the active surface 200 a. In some embodiments, the semiconductor substrate 210 may be a silicon substrate having active devices and optionally having passive devices formed thereon. The active element includes, for example, a transistor or the like. Passive components include, for example, resistors, capacitors, inductors, and the like. The connection pads 220 are distributed on the semiconductor substrate 210 of the die 200. In some embodiments, the connection pads 220 may include aluminum pads, copper pads, or other suitable metal pads. The passivation layer 230 is formed on the semiconductor substrate 210 to cover a portion of each connection pad 220. The passivation layer 230 has a plurality of contact openings exposing another portion of each of the connection pads 220 for electrical connection. The protection layer 230 may be made of a polymer material. In some embodiments, the protection layer 230 may be a silicon oxide layer, a silicon nitride layer, a silicon oxynitride layer, or a dielectric layer formed of other suitable dielectric materials.

The die 200 may be placed in the cavity C of the frame structure 100 using the following steps. An adhesive layer 300 may be formed on the back side 200b of the die 200. The adhesive layer 300 is formed to provide low die displacement and good heat dissipation. For example, the adhesive layer 300 may include a Die Attach Film (DAF), a Thermal Interface Material (TIM), an epoxy resin (epoxy resin), or other suitable adhesive material. Next, the die 200 with the adhesive layer 300 is placed in the cavity C of the frame structure 100, such that the back surface 200b of the die 200 is adhered to the frame structure 100 via the adhesive layer 300. For example, the adhesive layer 300 may be disposed between the back surface 200b of the die 200 and the main body 102 of the frame structure 100. The die 200 is configured such that the active surface 200a of the die 200 faces upward and away from the frame structure 100. In some embodiments, the adhesive layer 300 is in physical contact with the bottom surface of the cavity C. It should be noted that the foregoing sequence is merely an illustrative example, and the present invention is not limited thereto. In some alternative embodiments, the adhesive layer 300 may be formed in the cavity C of the frame structure 100 prior to attachment to the die 200. Fig. 2 is combined to describe the relative arrangement of the die 200 and the frame structure 100. Fig. 2 is a schematic top view of the frame structure 100 and the die 200 in fig. 1B. Referring to fig. 1B and fig. 2, the protrusion 104 of the frame structure 100 forms a rectangular closed ring surrounding the die 200. In some embodiments, the cavity C is larger than the die 200. For example, the cavity C can accommodate the die 200 such that the side 200C of the die 200 is spaced apart from the protrusion 104. In some embodiments, the die 200 is positioned such that the active face 200a of the die 200 is at a higher elevation than the surface 104a of the protrusion 104. Although the protrusion 104 is illustrated as a rectangular closed loop, the invention is not limited in its shape. In some alternative embodiments, the protrusion 104 may be a circular closed ring, a polygonal closed ring, or any other form of closed ring, as long as the protrusion 104 surrounds the periphery of the die 200.

Referring to fig. 1C, a molding die 400 having a sealing film 410 formed thereon is placed on the die 200. The sealing film 410 and the molding die 400 may be disposed on the active surface 200a of the die 200. The sealing film 410 may be pressed onto the active surface 200a such that the connection pads 220 of the die 200 are completely embedded in the sealing film 410. As described above, the active surface 200a of the die 200 is located at a higher height position than the surface 104a of the protrusion 104. In this manner, the molding die 400 and the sealing film 410 are placed on the die 200 in an elevated form. In other words, the protrusions 104 of the frame structure 100 are separated from the sealing membrane 410. In some embodiments, the material of the sealing film 410 includes a high temperature resistant epoxy or any suitable material having a high heat resistance. The sealing membrane 410 may possess elasticity. The sealing film 410 can be easily peeled off from the active surface 200a of the die 200 and the subsequently formed sealing material without leaving residues and without damaging the elements. In some embodiments, the sealing film 410 may serve as a protective layer to protect the molding die 400 from damage during subsequent processing. For example, the Young's modulus of the sealing film 410 may be less than 10 GPa. In some embodiments, the molding die 400 may be made of a metal material having high heat resistance. In other words, the molding die 400 may be made of a material capable of withstanding a high temperature in a subsequent molding process. For example, the material of the molding die 400 may include steel or the like.

Referring to fig. 1D, a sealing material 500 is filled in the gap between the sealing film 410, the frame structure 100 and the die 200. The sealing material 500 may be a molding compound (molding compound). By way of example, the sealing material 500 may include an insulating material such as a polymer, epoxy, or other suitable resin. The sealing material 500 may be solid under an environment of room temperature. In some embodiments, the sealing material 500 is first melted. Next, the sealing material 500 is transferred or pressed into the gaps between the sealing film 410, the frame structure 100 and the die 200. In some embodiments, the sealing material 500 is filled into the gap in a direction parallel to the back surface 200b of the die 200. The sealing material 500 may be transferred into the gap from the horizontal direction. In some embodiments, the process may be referred to as a transfer molding process. During the transfer molding process, a clamping force may be applied to the molding die 400 to firmly press the mold sealing film 410 against the active surface 200a of the die 200. As described above, since the connection pads 220 of the die 200 are well sealed and protected by the sealing film 410, the sealing film 410 can prevent the sealing material 500 from damaging the connection pads 220 during the transfer molding process. That is, the sealing film 410 can protect the active surface 200a of the die 200 from mold penetration during the transfer molding process. In this way, electrical connection between the connection pads 220 and the subsequently formed device can be ensured, thereby improving reliability of the subsequently formed package structure 10. In some embodiments, the young's modulus of the seal material 500 ranges between 10GPa to 20 GPa.

Referring to fig. 1E, the molding die 400 and the sealing film 410 are removed, and the sealing material 500 is cured to form the sealing body 502. In some embodiments, the curing temperature may range between 130 ℃ to 175 ℃. A sealing body 502 is formed on the frame structure 100 to cover the first surface 100a of the frame structure 100. For example, the seal body 502 may completely seal the protrusion 104 of the frame structure 100. The seal 502 may further seal the sides 200c of the die 200. Since the sealing body 502 is formed to fill the gap between the sealing film 410, the frame structure 100 and the die 200 (as shown in fig. 1D), at least a portion of the sealing body 502 is disposed between the die 200 and the frame structure 100. For example, at least a portion of the seal 502 is disposed between the side 200c and the bump 104. When the molding die 400 and the sealing film 410 are removed, the active surface 200a of the die 200 may be exposed.

Referring to fig. 1F, a redistribution structure 600 is formed on the active surface 200a of the die 200 and the encapsulant 502. The redistribution circuit structure 600 is electrically connected to the connection pads 220 of the die 200. The redistribution circuit structure 600 may include at least one dielectric layer 620 and a plurality of conductive elements 610 embedded in the dielectric layer 620. In some embodiments, the dielectric layer 620 may be made of a non-organic or organic dielectric material such as silicon oxide, silicon nitride, silicon carbide, silicon oxynitride, polyimide, benzocyclobutene (BCB), and the like. The dielectric layer 620 may be formed by spin-on coating (spin-on coating), Chemical Vapor Deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), or the like. The conductive element 610 may be made of copper, aluminum, nickel, gold, silver, tin, combinations thereof, or other suitable conductive materials. The conductive element 610 may be formed by sputtering, evaporation, electroless plating (electro-less plating), or electroplating.

The redistribution routing structure 600 may include two dielectric layers 620 (a first dielectric layer 622a and a second dielectric layer 622 b). However, the number of the dielectric layers 620 is not limited by the present invention and may be adjusted based on the design of the circuit. The conductive element 610 may include a plurality of circuit layers (a first circuit layer 612a and a second circuit layer 612b) and a plurality of interconnect structures (a plurality of first interconnect structures 614a and a plurality of second interconnect structures 614b) electrically connected to the connecting pad 220, the first circuit layer 612a and the second circuit layer 612 b. The first dielectric layer 622a is disposed on the sealing body 502 and the active surface 200a of the die 200. The first dielectric layer 622a has a plurality of contact openings to expose the connection pads 220 of the die 200. The first interconnect structure 614a is disposed in the contact opening, and the first interconnect structure 614a is in physical contact with both the first circuit layer 612a and the connecting pad 220, thereby forming an electrical connection between the die 200 and the redistribution circuit structure 600. In other words, the redistribution circuit structure 600 is in physical contact with the connection pads 220 of the die 200. Therefore, some steps in the conventional die formation process (e.g., forming conductive bumps on the bonding pads of the die) can be eliminated to reduce the process complexity and manufacturing cost of the subsequently formed package structure 10. The second dielectric layer 622b covers the first circuit layer 612 a. Similar to the first dielectric layer 622a, the second dielectric layer 622b also has a plurality of contact openings to expose a portion of the first circuit layer 612a, such that the first circuit layer 612a can be electrically connected to other circuit layers (e.g., the second circuit layer 612b) via the second interconnect structure 614 b. The second circuit layer 612b may be used to electrically connect devices formed in subsequent processes. In some embodiments, the second circuit layer 612b may be referred to as under-bump metallization (UBM).

The bumps 104 of the frame structure 100 are separated from the redistribution routing structure 600. For example, a partial seal 502 may be disposed between the bump 104 and the redistribution circuit structure 600 to isolate these components. The seal 502 may act as a buffer layer between the bumps 104 and the redistribution circuit structure 600 to further ensure the reliability of the subsequently formed package structure 10.

Referring to fig. 1G, after the redistribution routing structure 600 is formed, a plurality of conductive terminals 700 are formed on the redistribution routing structure 600 corresponding to the encapsulation body 502. In some embodiments, the conductive terminals 700 are disposed on the second circuit layer 612 b. The conductive terminal 700 can be formed by ball placement process and reflow process, for example. In some embodiments, the conductive terminals 700 are conductive bumps such as solder balls. However, the present invention is not limited thereto. The conductive terminals 700 may have other possible forms and shapes according to design requirements. For example, in some alternative embodiments, the conductive terminal 700 may be a conductive pillar (conductive pillar/conductive post).

After the redistribution structure 600 is formed, a dicing or singulation (singulation) process may be performed to obtain a plurality of package structures 10. The singulation process includes, for example, cutting with a rotating blade or a laser beam. In some embodiments, the singulation process is performed on portions of the frame structure 100 having a relatively thin thickness, which maximizes the life of the cutting blades. For example, a cutting street for cutting may be located on the body 102 of the frame structure to ensure that the thickness of the cut on the frame structure 100 is minimized. In some embodiments, a thinning process may be optionally performed before the singulation process to reduce the overall thickness of the body 102 of the frame structure 100. For example, a mechanical grinding process (CMP), a chemical-mechanical polishing process (CMP) or other suitable processes may be performed on the second surface 100b of the frame structure 100. The thinning process may reduce the overall height of the package structure 10.

The frame structure 100 of the package structure 10 may be used as a carrier during the manufacturing process of the package structure 10. Thus, the use of temporary carrier plates can be avoided. In other words, the expensive transfer bonding process performed in the conventional manufacturing process of the package structure can be eliminated to reduce the manufacturing cost. In addition, since the frame structure 100 may be formed of a rigid material, the frame structure 100 can provide rigidity and strength to the package structure. In this way, the problems of panel warpage and package cracking/breaking/cracking can be substantially prevented, thereby improving the yield and reliability of the package structure 10. Further, since the frame structure 100 may be made of a material having a low heat capacity and a high heat dissipation property, the frame structure 100 may also provide a heat dissipation function. Therefore, the performance of the package structure 10 can be further improved.

Fig. 3A-3G are cross-sectional views illustrating a method for manufacturing the package structure 20 according to some alternative embodiments of the invention. Referring to fig. 3A, a carrier 800 is provided, and an adhesive layer 900 is formed on the carrier 800. The carrier 800 may be a glass substrate or a glass support plate. However, the present invention is not limited thereto. Other suitable substrate materials may be used as the carrier 800, as long as the materials can support the package structure formed thereon and can withstand the subsequent processes. An adhesive layer 900 may be formed on the carrier 800 to temporarily promote adhesion between the carrier 800 and the structures subsequently formed thereon. The adhesive layer 900 may be a Light To Heat Conversion (LTHC) adhesive layer. However, the invention is not so limited and other suitable adhesive layers may be used in alternative embodiments. For example, the adhesive layer 900 may include epoxy (epoxyresin), inorganic materials, organic polymer materials, or other suitable adhesive materials.

Referring to fig. 3B, the die 200 and the frame structure 100 are sequentially disposed on the adhesive layer 900. The die 200 and the frame structure 100 may be similar to the die 200 and the frame structure 100 used in the embodiments of fig. 1A and 1B, and therefore are not described herein again. As shown in fig. 3B, the die 200 is placed such that the active surface 200a of the die 200 faces the carrier 800 and the back surface 200B of the die 200 faces upward. In some embodiments, the backside 200b of the die 200 is pressed such that the connection pads 220 are completely embedded in the adhesive layer 900. After the die 200 is fixed to the adhesive layer 900, the frame structure 100 is disposed on the adhesive layer 900 such that the die 200 is covered by the cavity C of the frame structure 100. In other words, the protrusion 104 of the frame structure 100 faces the carrier 800 to surround the die 200. In some embodiments, the surface 104a of the frame structure 100 is in physical contact with the adhesive layer 900. On the other hand, the frame structure 100 may be separate from the die 200. For example, the back surface 200b and the side 200c of the die 200 may not contact the frame structure 100. In some embodiments, since the protrusion 104 of the frame structure 100 surrounds the die 200, the frame structure 100 may be electrically grounded to provide emi shielding.

Referring to fig. 3C, a molding die 400 having a sealing film 410 formed thereon is placed on the second surface 100b of the frame structure 100. The molding die 400 and the sealing film 410 may be similar to the molding die 400 and the sealing film 410 used in the embodiment of fig. 1C, and thus are not described herein. As shown in fig. 3C, a sealing film 410 is disposed between the molding die 400 and the second surface 100b of the frame structure 100. In other words, the frame structure 100 is in physical contact with the sealing membrane 410. In some embodiments, the frame structure 100 has at least one through opening. Fig. 4 is a schematic side view of an intermediate stage of the manufacturing method as shown in fig. 3C. The protrusion 104 of the frame structure 100 has at least one through opening OP. The through opening OP exposes at least a portion of the die 200 when viewed laterally. For example, the side 200c of the die 200 can be seen from the side through the through opening OP. The through opening OP may be a semicircular opening formed on a sidewall of the protrusion 104, thereby forming an arch structure. However, the present invention is not limited thereto. In some alternative embodiments, the through opening OP may be a rectangular opening, a circular opening, or an opening having other geometries. The protrusion 104 may receive only one through opening OP. However, the present invention is not limited thereto. In some alternative embodiments, the protrusion 104 may include a plurality of through openings OP. The through opening OP may be located on a single sidewall of the protrusion 104, or may be located on a plurality of sidewalls of the protrusion 104.

Referring to fig. 3D, the sealing material 500 is filled in the gap between the die 200 and the frame structure 100 and the gap between the frame structure 100 and the adhesive layer 900. The sealing material 500 may be similar to the sealing material 500 used in the embodiment of fig. 1D, and thus is not described herein. The sealing material 500 may be solid under an environment of room temperature. In some embodiments, the sealing material 500 is first melted. Next, the sealing material 500 is transferred or pressed into the gap between the die 200 and the frame structure 100 and the gap between the frame structure 100 and the adhesive layer 900. The sealing material 500 may flow into the cavity C of the frame structure 100 through the through opening OP to fill the gap between the die 200 and the frame structure 100. The through opening OP may also be filled with the sealing material 500. In some embodiments, the sealing material 500 is filled into the gap in a direction parallel to the back surface 200b of the die 200. The sealing material 500 may be transferred into the gap from the horizontal direction. In some embodiments, the process may be referred to as a transfer molding process. During the injection molding process, a clamping force may be applied to the molding die 400 to firmly press the sealing film 410 against the second surface 100b of the frame structure 100. Since the adhesive layer 900 can well seal and protect the bonding pads 220 of the die 200, the adhesive layer 900 can prevent the sealing material 500 from damaging the bonding pads 220 during the transfer molding process. That is, the adhesive layer 900 can protect the active surface 200a of the die 200 from mold penetration during the transfer molding process. In this way, electrical connection between the connection pads 220 and the subsequently formed device can be ensured, thereby improving reliability of the subsequently formed package structure 20.

Referring to fig. 3E, the molding die 400 and the sealing film 410 are removed, and the sealing material 500 is cured to form the sealing body 502. In some embodiments, the curing temperature may range between 130 ℃ to 175 ℃. A sealing body 502 is formed on the frame structure 100, and the sealing body 502 is filled in the cavity C of the frame structure 100. For example, the seal 502 seals the backside 200b and the side 200c of the die 200. Since the sealing body 502 is formed to fill the gap between the die 200 and the frame structure 100 and the gap between the frame structure 100 and the adhesive layer 900 (as shown in fig. 3D), at least a portion of the sealing body 502 is disposed between the die 200 and the frame structure 100. For example, a portion of the sealing element 502 is disposed between the side 200c of the die 200 and the protrusion 104 of the frame structure 100. Meanwhile, a part of the sealing body 502 is disposed between the back surface 200b of the die 200 and the main body 102 of the frame structure 100. In addition, a portion of the sealing body 502 is also filled into the through opening OP of the protrusion 104 of the frame structure 100.

After the sealing body 502 is formed, the adhesive layer 900 and the carrier 800 may be separated from the sealing body 502, the frame structure 100 and the active surface 200a of the die 200. As described above, the adhesive layer 900 may be a light-to-heat conversion layer. The adhesive layer 900 and the carrier 800 may be peeled off from the die 200, the sealing body 502 and the frame structure 100 under the exposure of the UV laser. When the carrier 800 and the adhesive layer 900 are removed, the active surface 200a of the die 200 is exposed.

The steps shown in fig. 3F-3G may be similar to those described in fig. 1F-1G, and thus, the details are omitted here. As shown in fig. 3G, a package structure 20 is obtained. In the package structure 20, the frame structure 100 is in physical contact with the redistribution routing structure 600. For example, the bump 104 of the frame-like structure 100 is in physical contact with the first dielectric layer 622a to provide a more rigid and stronger structural support for the package structure 20. In addition, since the bump 104 surrounds the die 200, the frame structure 100 can provide emi shielding function, thereby improving the electrical performance of the package structure 20. The frame structure 100 of the package structure 20 may be used as a carrier during a part of the manufacturing process of the package structure 20. Thus, the use of temporary carrier plates can be avoided. In other words, the expensive transfer bonding process performed in the conventional manufacturing process of the package structure can be eliminated to reduce the manufacturing cost. In addition, since the frame structure 100 may be formed of a rigid material, the frame structure 100 can provide rigidity and strength to the package structure. In this way, the problems of panel warpage and package cracking/breaking/cracking can be substantially prevented, thereby improving the yield and reliability of the package structure 20. Further, since the frame structure 100 may be made of a material having a low heat capacity and a high heat dissipation property, the frame structure 100 may also provide a heat dissipation function. Therefore, the performance of the package structure 20 can be further improved.

Fig. 5A-5C are cross-sectional views of some steps of a method of manufacturing a package structure 30 according to some embodiments of the invention. The structure shown in fig. 5A can be obtained by performing steps similar to those described in fig. 1A to 1F, and thus, the details are omitted herein.

Referring to fig. 5B, the second surface 100B of the frame structure 100 is patterned to form a plurality of fins 106. A photolithography process and an etching process may be performed on the second surface 100b of the frame structure 100 (the surface of the frame structure 100 opposite to the cavity C) to form the fins 106. The etching process includes a wet etching process or a dry etching process. In some embodiments, the frame structure 100 is formed by a body 102, a protrusion 104, and a fin 106. As shown in fig. 5B, the protrusion 104 and the fin 106 are located on opposite sides of the body 102. The number of fins 106 may be greater than the number of projections 104. In some embodiments, the fins 106 may act as heat sinks for heat dissipation. For example, the fins 106 can provide a larger contact area/interface between the frame structure 100 and the ambient environment (e.g., ambient air). Due to the larger contact area between the frame structure 100 and the ambient environment, heat may be dissipated to the ambient environment at a faster rate. As shown in fig. 5B, fins 106 are shown as rectangular protrusions, but the invention is not limited thereto. In alternative embodiments, the fins 106 may be triangular projections, semi-circular projections, or projections having other types of lines and shapes. Although the patterning process is performed on the structure shown in fig. 5A, the invention is not limited thereto. In some alternative embodiments, the patterning process described above may be performed on the structure shown in fig. 3F, and fins may also be formed.

Referring to fig. 5C, a plurality of conductive terminals 700 are formed on the redistribution circuit structure 600 and a singulation process is performed to obtain the package structure 30. The steps shown in fig. 5C may be similar to those described in fig. 1G, and thus, the details are omitted herein.

As described above, since the frame structure 100 may be made of a material having a low heat capacity and a high heat dissipation property, the frame structure 100 may provide a function of dissipating heat. In addition, fins 106 are employed in the frame structure 100 to allow heat to dissipate at a faster rate. Therefore, the performance of the package structure 30 can be further improved.

In summary, in the manufacturing process of the package structure, the frame structure in the package structure can be used as a carrier. Thus, the use of temporary carrier plates can be avoided. In other words, the expensive transfer bonding process performed in the conventional manufacturing process of the package structure can be eliminated to reduce the manufacturing cost. In addition, since the frame structure may be formed of a rigid material, the frame structure can provide rigidity and strength to the package structure. Thus, the problems of panel warpage and package chipping/cracking can be sufficiently prevented, thereby improving the yield and reliability of the package structure. Further, the frame structure may also provide heat dissipation and emi shielding. Therefore, the performance of the package structure can be further improved.

Although the present invention has been described with reference to the above embodiments, it should be understood that various changes and modifications can be made therein by those skilled in the art without departing from the spirit and scope of the invention.