阅读说明：本技术 导电性凸块及化学镀Pt浴 (Conductive bump and electroless Pt plating bath ) 是由 前川拓摩 小田幸典 柴田利明 伊井义人 神崎翔 于 2019-07-10 设计创作，主要内容包括：本发明提供了可以防止凸块的基底导电层中使用的金属扩散至Au层表面或Ag层表面的凸块。本发明的导电性凸块为在基体上形成的导电性凸块,其中,所述凸块从基体侧依次至少具有基底导电层、Pd层、与所述Pd层直接接触的Pt层、以及Au层或者Ag层,所述凸块的直径为20μm以下。(The invention provides a bump which can prevent metal used in a substrate conductive layer of the bump from diffusing to the surface of an Au layer or the surface of an Ag layer. The conductive bump of the present invention is a conductive bump formed on a base, wherein the bump has at least a base conductive layer, a Pd layer, a Pt layer in direct contact with the Pd layer, and an Au layer or an Ag layer in this order from the base side, and the bump has a diameter of 20 μm or less.)

1. A conductive bump is characterized in that it is a conductive bump formed on a substrate,

wherein the bump has at least a base conductive layer, a Pd layer, a Pt layer in direct contact with the Pd layer, and an Au layer or an Ag layer in this order from the base side,

the bump has a diameter of 20 μm or less.

2. The conductive bump according to claim 1, wherein the base conductive layer is a metal selected from at least one of Ni, Cu, Co, Al, and W, or an alloy thereof.

3. An electronic component in which the Au layer or Ag layer of the conductive bump according to claim 1 or 2 is electrically connected to another substrate.

4. An electroless plating Pt bath for forming a Pt layer according to any one of claims 1 to 3, containing a water-soluble platinum compound, a reducing agent, a buffering agent and ammonium chloride.

5. The electroless Pt plating bath according to claim 4, wherein the reducing agent is at least one selected from formic acid or a salt thereof, and hydrazine.

Technical Field

The invention relates to a conductive bump and an electroless Pt plating bath.

Background

In semiconductor Integrated circuits such as LSIs (large scale Integrated circuits) in which IC (Integrated Circuit) chips are Integrated, wire bonding is generally used as a method for electrically connecting IC chips to each other or between an IC chip and a Circuit board or the like, and recently, three-dimensional Integrated circuits in which IC chips are connected to each other three-dimensionally have attracted attention in accordance with the miniaturization of electronic devices and the densification of Integrated circuits. Flip chip bonding is performed as a mounting technique for a stacked semiconductor integrated circuit such as a three-dimensional integrated circuit. Flip chip bonding is electrically connected to a connection portion of another substrate via a bump-like terminal called a bump formed on an IC chip, and therefore, wiring is shorter than wire bonding, and the mounting area can be reduced, and thus, the flip chip bonding is suitable for use in portable devices and the like which are required to be small in size and thin.

Semiconductor integrated circuits are required to have low resistivity, low contact resistance (hereinafter referred to as "electrical characteristics") and good bondability (hereinafter referred to as "bonding characteristics") for electrical connection to IC chips (hereinafter, these characteristics are collectively referred to as "connection reliability"), and various studies are being conducted. Various studies have been made on a bump material for an IC chip, and as a bump having low cost and excellent connection reliability, for example, patent documents 1 and 2 disclose a bump in which an Au layer is directly formed on an underlying conductive layer of Ni or the like (hereinafter referred to as "Ni — Au bump").

In addition, when a material having excellent heat resistance, such as a silicon wafer, is used as a base instead of a paper phenol resin such as a bakelite board, the temperature of the heat history applied in the semiconductor production process is becoming higher and higher, and may reach 300 ℃. Therefore, as the problem points of the Ni — Au bump, there are pointed out: the high temperature thermal history (hereinafter also referred to as "high temperature thermal history") of 300 ℃ or higher causes Ni of the base conductive layer to diffuse onto the Au layer surface, and connection reliability is lowered. As a countermeasure, for example, patent document 3 proposes a technique of providing a Pt layer between Ni and Au layers.

Disclosure of Invention

In recent years, as a means for increasing the density of three-dimensional integrated circuits, it has been studied to connect IC chips with fine bumps having a diameter of 20 μm or less (hereinafter, also referred to as "micro bumps"). However, in the case of the micro bump, the Pt layer cannot be directly formed on the base conductive layer, and the connection reliability of the micro bump becomes a problem.

In addition, it has been pointed out that the stability of the electroless Pt plating bath is required to be improved in industrialization because unstable Pt particles are easily precipitated.

The present invention has been made in view of the above circumstances, and an object of the present invention is to provide a micro bump capable of preventing a metal used for a base conductive layer (hereinafter also referred to as "base metal") from diffusing on the surface of an Au layer or the surface of an Ag layer; and an electroless Pt plating bath which is suitable for forming a Pt layer effective for preventing diffusion and has excellent stability of the Pt plating bath.

The conductive bump of the present invention, which solves the above-described problems, has the following configuration.

[1] A conductive bump formed on a base, wherein the bump has at least a base conductive layer, a Pd layer, a Pt layer in direct contact with the Pd layer, and an Au layer or an Ag layer in this order from the base side, and the bump has a diameter of 20 [ mu ] m or less.

The conductive bump of the present invention preferably has the following configuration.

[2] The conductive bump according to [1], wherein the base conductive layer is a metal selected from at least one of Ni, Cu, Co, Al and W, or an alloy thereof.

[3] And an electronic component in which the Au layer or Ag layer of the conductive bump is electrically connected to another substrate.

[4] An electroless Pt plating bath for forming the Pt layers as recited in the above [1] to [3], comprising a water-soluble platinum compound, a reducing agent, a buffering agent and ammonium chloride.

[5] The electroless Pt plating bath according to [4], wherein the reducing agent is at least one selected from formic acid or a salt thereof, and hydrazine.

The bump of the present invention can prevent the base metal from diffusing to the surface of the Au layer or the Ag layer, thereby obtaining excellent connection reliability. In addition, the electroless Pt plating bath of the present invention is excellent in bath stability.

Drawings

Fig. 1 is a schematic cross-sectional view showing a structure of a bump according to the present invention.

Fig. 2 is a schematic cross-sectional view showing a structure of an electronic component in which a base body on which bumps of the present invention are formed is bonded to another base body.

Description of the reference numerals

1. Substrate

2. Connecting part

3. Base conductive layer

4. Pd layer

5. Pt layer

6. Au or Ag layer

7. Conductive bump

8. Other substrates

10. Base body

Detailed Description

The inventors of the present invention have conducted intensive studies on means for preventing diffusion of the base metal in the micro-bumps. In the case of forming a Pt layer on an underlying conductive layer of a micro bump by electroless plating, it is necessary to form a Pt plating film on the surface of the underlying conductive layer (hereinafter also referred to as a "small area") by making a Pt plating solution intrude into an opening having a diameter of several tens of μm or less provided on a passivation film. Further, it has been studied to form a Pt layer by vapor deposition, but it is difficult to sufficiently deposit Pt on a minute area in vapor deposition. Therefore, the connection reliability of the micro bumps manufactured by these methods is poor.

It is considered that the Au layer can be made thick even if the coating property of the Pt layer is insufficient to improve the connection reliability, but the Au layer becomes thick, which increases the cost, and the Au layer needs to be made as thin as possible in the stacked semiconductor integrated circuit, and thus the Au layer cannot be used.

Here, the inventors of the present invention repeatedly performed experiments on the diffusion preventing effect of the base metal using various metals having conductivity (hereinafter, referred to as "conductive metals"). First, studies have been made on using Co, Cu, or the like as a conductive metal other than Ni for the base conductive layer. However, the 2-layer structure of the base conductive layer and the Au layer of the micro-bump causes the base metal to diffuse to the surface of the Au layer due to the high temperature thermal history. Next, a conductive metal different from the base conductive layer, for example, a Pd-based alloy layer, a Ni-based alloy layer, or a Co-based alloy layer as an alloying element such as P, B, W is interposed between the base conductive layer and the Au layer, but when a high-temperature heat history is applied, no diffusion preventing effect is obtained.

As a result of further intensive studies, the inventors of the present invention have found that a Pt layer having a very different composition from the conventional one, that is, a Pt layer is directly formed on a Pd layer with the Pd layer interposed between the Pt layer and the base conductive layer, so that the reactivity of a Pt plating solution is improved and the Pt deposition property on the Pd layer is improved, and as a result, a Pt layer having a good coating property can be formed. Thus, even if a high-temperature heat history is applied to the micro bump in which the Pd layer, the Pt layer, and the Au layer are formed in this order from the base side, the base metal can be prevented from diffusing to the surface of the Au layer.

Further, the present inventors have also studied the problem that the conventional Pt plating bath is unstable, Pt particles are precipitated in the plating bath, and it is difficult to form the Pt layer by electroless plating.

The present inventors have made extensive studies on the above-mentioned problems such as stability of the plating bath and good coverage of a minute area in the electroless Pt plating bath, and as a result, have found that when an electroless Pt plating bath rich in ammonium chloride is used, the stability of the plating bath is good and a Pt plating film excellent in coverage can be formed on a minute area where a Pd layer is formed. Further, the conventional electroless Pt plating bath contains amine-derived ammonium salts such as tetraamine platinum salts used as water-soluble platinum compounds, but the above problems also arise. Further, a chloride-rich plating bath in which a chloride such as sodium chloride is added cannot solve the above-mentioned problems. Similarly, in the case of an ammonia-rich plating bath to which only ammonia is added, the plating bath stability is improved, but the coverage is lowered, and the above-mentioned problems cannot be solved. However, it has been unexpectedly found that when ammonium chloride is added to make the electroless plating Pt bath richer in ammonium chloride than before and other compositions of the plating bath are optimized, excellent effects can be exerted in both plating bath stability and coating properties. Based on such findings, the electroless Pt plating bath of the present invention was developed.

The configuration of the conductive bump of the present invention will be described below with reference to fig. 1, but the conductive bump of the present invention is not limited to the following configuration, and may be implemented by being appropriately modified within a range that conforms to the gist described below.

The conductive bump 7 according to the present invention includes at least a base conductive layer 3, a Pd layer 4, a Pt layer 5, and an Au layer 6 or an Ag layer 6 in this order from the base 10 side.

The base 10 is a substrate 1 having a connection portion 2 on which an electrode or the like of the conductive bump 7 of the present invention is formed. Examples of the substrate 10 include various electronic components such as an IC chip, an integrated circuit of an IC chip, and a circuit board. The material of the substrate 1 is not particularly limited, and various known substrates such as resin, metal, ceramic, silicon, glass, and a mixture thereof can be used. Among them, silicon excellent in heat resistance at high temperatures of 300 ℃ or higher is preferable in the present invention, and various silicon wafers can be used.

Conductive bump

In the present invention, the conductive bump 7 is a protrusion-like terminal formed on at least one surface of the substrate 10 side in order to electrically connect the substrate 10 and another substrate (8 in fig. 2), and is a laminate composed of the layers described below. The shape of the conductive bump 7 may be any of various known shapes.

The conductive bump 7 may have a size required for the application. Therefore, the thickness of the conductive bump 7 may be appropriately adjusted depending on the application, and is not particularly limited. Preferably 100 μm or less, more preferably 50 μm or less. The lower limit is not particularly limited, but is preferably several μm or more, and more preferably 10 μm or more. The conductive bump 7 to be the object of the present invention is a micro bump having a diameter of 20 μm or less, more preferably 15 μm or less, and still more preferably 10 μm or less. The diameter of the bump is the maximum diameter of the outermost surface, and when the diameter of the conductive bump 7 is different depending on the height position of the bump, such as a conical shape, the maximum diameter of the surface on which the Pt layer is formed. The bump diameter is a value measured by an electron microscope, and specifically, the conditions described in examples are followed.

Next, the layers constituting the conductive bump 7 of the present invention will be described.

Base conductive layer

The base conductive layer 3 is a conductive layer that serves as a base of the conductive bump 7 formed on the connection portion 2 of the base 10 for the purpose of improving heat resistance and the like. The base conductive layer 3 may be made of a metal having conductivity, preferably a metal selected from at least one of Ag, Sn, Pd, Ni, Cu, Co, Al, and W, or an alloy thereof; more preferably a metal selected from at least one of Ni, Cu, Co, Al, and W, or an alloy thereof; further preferably Ni, Co, or an alloy thereof. The alloying element may be combined with various known alloying elements, and is preferably at least one selected from P, B and W. Specific examples thereof include Ni-based alloys such as P-Ni-based alloys, B-Ni-based alloys, W-Ni-based alloys, and W-P-Ni-based alloys; P-Co-based alloys, B-Co-based alloys, W-P-Co-based alloys, and the like. The ratio of the base metal and the alloying element constituting the base conductive layer is not limited, but the ratio of the alloying element is preferably less than 50 mass%, more preferably 15 mass% or less, and still more preferably 10 mass% or less. The base conductive layer 3 may be composed of 1 kind of metal (or an alloy thereof), or 2 or more kinds of metals (or alloys thereof) may be combined.

By controlling the thickness of the base conductive layer 3, the heat resistance and the like of the connection portion 2 can be improved. From the viewpoint of enhancing such an effect, the thickness of the base conductive layer 3 is preferably 0.01 μm or more, more preferably 0.1 μm or more, and further preferably 0.3 μm or more. On the other hand, when the base conductive layer 3 is made thick, the above-described effect can be further improved. The thickness of the base conductive layer 3 may be adjusted as appropriate according to the thickness of the micro bump, and is preferably 20 μm or less, more preferably 10 μm or less, and further preferably 5 μm or less.

Pd layer

In the present invention, a Pd layer 4 is provided between the base conductive layer 3 and the Pt layer 5. When the Pd layer 4 is provided between the base conductive layer 3 and the Pt layer 5 is directly formed on the Pd layer 4, the Pt layer 5 having an improved Pt deposition property and a good coating property can be formed, and an excellent diffusion suppression effect can be obtained.

Fig. 1 is arranged such that one side surface of the Pd layer 4 is in contact with the base conductive layer 3 and the other side surface is in contact with the Pt layer 5. The Pd layer 4 is a layer made of Pd or a Pd alloy (hereinafter, collectively referred to as "Pd layer"). The Pd layer may be made of Pd and the balance of unavoidable impurities. The Pd alloy layer is preferably a Pd-P alloy. The P content in the Pd — P alloy plating film is preferably 15 mass% or less, and more preferably 10 mass% or less.

The thickness of the Pd layer 4 can be appropriately adjusted to obtain a desired effect, and is preferably 0.005 μm or more, more preferably 0.01 μm or more, and still more preferably 0.1 μm or more. On the other hand, the Pd layer 4 can be adjusted as appropriate depending on the thickness of the micro bump, and is preferably 5 μm or less, more preferably 1 μm or less, and further preferably 0.5 μm or less.

Further, although not shown, an intermediate conductive layer made of another conductive metal may be provided between the base conductive layer 3 and the Pd layer 4 in an amount of 1 or more as necessary. In the case where the intermediate conductive layer is provided, the conductive metal may be appropriately selected depending on the application and the characteristics. Examples of the optional conductive metal include the metals exemplified for the base conductive layer 3 and alloys thereof. The thickness of the intermediate conductive layer may be appropriately set so as to obtain a desired effect, and may be equal to the thickness of the Pd layer 4.

Pt layer

The Pt layer 5 has the diffusion preventing effect as described above. The Pt layer 5 is preferably in direct contact with the Au layer 6 or the Ag layer 6. When another metal layer is interposed between the Pt layer 5 and the Au layer 6 (or the Ag layer 6), the metal may diffuse to the surface of the Au layer 6. On the other hand, in order to exhibit the diffusion preventing effect of the Pt layer 5, it is necessary that the Pt layer 5 does not have defects such as through holes which cause diffusion of the base metal, and as a configuration capable of obtaining a good coverage, the surface of the Pt layer 5 on the substrate 10 side is in direct contact with the Pd layer 4. In consideration of the covering property, the Pt layer 5 is preferably made of Pt having as high a purity as possible, and may contain unavoidable impurities within a range not affecting the covering property.

By controlling the thickness of the Pt layer 5, an excellent diffusion preventing effect can be exhibited. From the viewpoint of enhancing the diffusion preventing effect, the thickness of the Pt layer 5 is preferably 0.005 μm or more, more preferably 0.01 μm or more, and further preferably 0.1 μm or more. On the other hand, the diffusion preventing effect can be further improved when the Pt layer is thicker, but since the conductive bump 7 becomes higher and hinders the thinning, it is preferably 5 μm or less, more preferably 3 μm or less, and still more preferably 1 μm or less.

Au or Ag layer

By locating the Au layer 6 or the Ag layer 6 on the outermost surface of the conductive bump 7, good connection reliability with another substrate (8 in fig. 2) can be achieved. The outermost surface of the conductive bump 7 is a surface that is in contact with another substrate or a constituent of another substrate. Further, the side surfaces of the conductive bumps 7 which are not in contact with other substrates may or may not be formed with the Au layer 6 or the Ag layer 6.

Au layer

An Au layer is formed on the surface layer of the bump to exhibit excellent connection reliability. In the present invention, since the diffusion preventing effect is obtained by the Pt layer 5, the Au layer 6 can be formed thinly. The thickness of the Au layer 6 is preferably 5 μm or less, more preferably 3 μm or less, and still more preferably 1 μm or less. The lower limit of the thickness of the Au layer 6 is not particularly limited, but is preferably 0.005 μm or more, more preferably 0.01 μm or more, and still more preferably 0.1 μm or more. In consideration of connection reliability, the Au layer 6 is preferably made of Au of as high purity as possible, and may contain inevitable impurities within a range that does not affect connection reliability.

Ag layer

In order to exhibit excellent connection reliability, an Ag layer 6 is formed on the surface layer of the bump. In the present invention, since the diffusion preventing effect is obtained by the Pt layer 5, the Ag layer 6 can be formed thinly. The thickness of the Ag layer 6 is preferably 5 μm or less, more preferably 3 μm or less, and still more preferably 1 μm or less. The lower limit of the thickness of the Ag layer 6 is not particularly limited, but is preferably 0.005 μm or more, more preferably 0.01 μm or more, and still more preferably 0.1 μm or more. In consideration of connection reliability, the Ag layer 6 is preferably made of Ag of as high purity as possible, and may contain inevitable impurities within a range not affecting connection reliability.

Electronic component

The substrate 10 having the conductive bump 7 of the present invention can be electrically connected to another substrate via the conductive bump to constitute an electronic component. The other base may be configured to be the same as or different from the base 10, and may be a base having a connection portion connectable to the base 10, such as an IC chip, an integrated circuit of an IC chip, or a circuit board, for example, without limitation. For example, when the conductive bump 7 of the present invention is formed on an IC chip, the IC chip may be electrically connected to a circuit board, or the IC chip may be electrically connected to another IC chip to form a three-dimensional integrated circuit, or a plurality of the IC chips may be stacked.

Fig. 2 is a diagram showing a state in which the substrate 10 on which the conductive bump 7 of the present invention is formed and another substrate 8 are connected by flip-chip bonding. The configuration of the connection portion (not shown) of the other substrate 8 electrically connected to the conductive bump 7 is not particularly limited, and an arbitrary connection portion such as a pad electrode for connecting a semiconductor pattern such as a signal line may be exemplified. The joining method may be any of various known joining methods such as an ultrasonic joining method and a thermal compression joining method.

Preparation method

Hereinafter, a preferred method for producing the conductive bump 7 of the present invention will be described. The method for producing the conductive bump 7 of the present invention is not limited to the following production method, and may be appropriately changed.

The substrate 10 having the conductive bump 7 formed thereon may be prepared by a conventionally known method, and the conductive bump 7 may be formed on the connection portion of the substrate 10. For example, the conductive bump 7 may be formed on the connection portion 2 such as a pad electrode connected to various wirings such as a signal line and a power supply line of the integrated circuit on the substrate 10. The connection portion 2 of the base 10 forming the conductive bump 7 may be formed of a metal foil of copper, aluminum, iron, nickel, chromium, molybdenum, or the like, or an alloy foil thereof, such as a copper alloy of aluminum bronze, phosphor bronze, brass, or the like, or stainless steel, invar, nickel alloy, tin alloy, or the like. Further, in order to improve the adhesion between the connection portion 2 and the conductive base layer 3 of the conductive bump 7, various metal films having an adhesion improving effect, such as Ti, Cr, and W, may be formed. Before the conductive bump 7 is formed, the base 10 may be subjected to various pretreatments such as a cleaning treatment and an acid cleaning treatment as necessary, and then the base conductive layer 3 may be formed.

Formation of a conductive layer on a substrate

The base conductive layer 3 is formed on the connection portion 2, and the base conductive layer 3 can be formed by various known methods such as an electroplating method, a chemical plating method, a displacement plating method, a stud bump method, and a transfer method. Preferably, the electroless plating method includes forming a passivation film for protecting the semiconductor element on the substrate by forming a resist film or the like on the substrate, and then forming a bump opening in the passivation film with a photoresist, an etchant, or the like. After a pretreatment such as a cleaning treatment or a zincate treatment is performed as necessary, an electroless plating treatment is performed using an electroless plating bath to form a plating film, that is, the base conductive layer 3, on the base connecting portion provided with the bump opening. When the base conductive layer 3 is formed by electroless plating, various known processing conditions can be employed, and the composition, pH, processing temperature, processing time, and the like of the electroless plating bath are not particularly limited. After forming an intermediate conductive layer on the base conductive layer 3, a Pd layer described later may be formed. When the intermediate conductive layer is provided on the base conductive layer 3, a desired intermediate conductive layer may be formed by various known methods such as electroless plating.

Formation of Pd layer

After the base conductive layer 3 is formed, the Pd layer 4 is provided. The method for forming the Pd layer 4 is not particularly limited, and it can be formed by various known methods as in the case of the base conductive layer 3. When the base conductive layer 3 is formed by forming the passivation film, the electroless plating treatment is preferably continued to form the Pd layer 4. In the case of forming the Pd layer 4 by electroless plating, various known treatment conditions can be employed, and the composition, pH, treatment temperature, treatment time, and the like of the electroless plating bath are not particularly limited. Further, the Pd layer 4 may be provided after forming an intermediate conductive layer on the base conductive layer 3 as necessary.

Formation of Pt layer

After the Pd layer 4 is formed, the Pt layer 5 is formed. The Pt layer 5 is preferably formed by electroless plating. In the case of forming the Pt layer 5 by the electroless plating method, the following electroless plating Pt bath of the present invention is preferably used in consideration of the stability and the coating property of the plating bath.

Electroless plating Pt bath

The electroless Pt plating bath of the present invention contains a water-soluble platinum compound, a reducing agent, a buffering agent, and ammonium chloride. Although the electroless Pt plating bath also contains ammonium chloride derived from a water-soluble platinum compound, the present invention is characterized by containing more than a stoichiometric ratio of ammonium chloride. The concentration of ammonium chloride in the electroless Pt plating bath is preferably 10g/L or less, more preferably 5g/L or less, and still more preferably 1g/L or less. Since the plating bath stability is lowered when the ammonium chloride concentration is low and a good coating property on the micro bumps may not be obtained, it is preferably 1ppm or more, more preferably 10ppm or more, and still more preferably 100ppm or more. In particular, the electroless Pt plating solution of the present invention is preferable because it can form the Pt layer 5 having good coverage with the Pd layer 4 in the passivation film having an opening diameter of several tens of μm or less, for example, 20 μm or less as described above.

Water-soluble platinum compound

The water-soluble platinum compound may be a general platinum salt, and for example, dinitrodiammine platinum, chloroplatinate, tetramine platinum salt, hexamine platinum salt, and the like may be used. These platinum compounds may be used alone, or 2 or more kinds thereof may be used in combination.

The amount of the water-soluble platinum compound added is preferably 0.1g/L or more, and more preferably 0.5g/L or more, from the viewpoint of productivity, as the concentration of platinum in the electroless Pt plating bath. From the viewpoint of the stability of the plating bath, it is preferably 3.0g/L or less, and more preferably 2.0g/L or less.

Reducing agent

The reducing agent may be one capable of reducing and precipitating Pt ions, and is preferably at least one selected from formic acid or a salt thereof (hereinafter, also referred to as formic acid) having an excellent Pt-plating deposition improving effect, and hydrazine. More preferably, the reducing agent is formic acid, and is excellent in plating bath stability, Pt deposition property, corrosion inhibition of the base metal, and the like. The hydrazine-containing Pt plating bath is low in bath stability and poor in long-term storage stability, but is also preferable because of having Pt deposition property on the micro bumps.

Formic acid series

The formic acid is formic acid or a salt thereof, and examples of the salt of formic acid include: alkali metal salts of formic acid such as potassium formate and sodium formate; alkaline earth metal salts of formic acid such as magnesium formate and calcium formate; ammonium salts of formic acid, quaternary ammonium salts of formic acid, amine salts of formic acid containing primary to tertiary amines; and the like. In the present invention, formic acid or a salt thereof may be used alone or in combination of 2 or more.

In order to fully exert the above-described effects, the total concentration of formic acid in the electroless Pt plating bath is preferably 1g/L or more, more preferably 5g/L or more, and still more preferably 10g/L or more. On the other hand, since the plating bath is liable to become unstable when it is excessively contained, the total concentration of formic acid is preferably 100g/L or less, more preferably 80g/L or less, and still more preferably 50g/L or less.

Hydrazines

As hydrazines, hydrazine; hydrazine hydrate such as hydrazine monohydrate; hydrazine salts such as hydrazine carbonate, hydrazine sulfate, neutral hydrazine sulfate and hydrazine hydrochloride; organic derivatives of hydrazines such as pyrazoles, triazoles, and hydrazides; and the like. As the pyrazole, a pyrazole derivative such as 3, 5-dimethylpyrazole or 3-methyl-5-pyrazolone can be used. As the triazole, 4-amino-1, 2, 4-triazole, 1, 2, 3-triazole and the like can be used. As the hydrazide, adipic acid dihydrazide, maleic acid hydrazide, carbohydrazide and the like can be used. Hydrazine hydrate such as hydrazine monohydrate and hydrazine sulfate are preferable. These may be used alone or in combination of 2 or more.

The total concentration of hydrazines in the electroless Pt plating bath is preferably 0.1g/L or more, more preferably 0.3g/L or more, still more preferably 1.0g/L or more, preferably 5g/L or less, and more preferably 3g/L or less.

Buffering agent

The buffer agent has the function of adjusting the pH of the plating bath. In view of the stability of the plating bath, it is preferably pH3 or more. In addition, the pH is preferably 11 or less in consideration of the deposition rate at the time of forming the Pt plating film. Particularly, when formic acid is used as the reducing agent, it is more preferable to use a condition around a weak base at a pH of 10 to 9 in forming a Pt layer that exhibits the above-described effects of the present invention in consideration of bath stability and environmental load. Specifically, the pH may be 10 or less, 10 or more, 9 or 9 or less. The buffer may be appropriately selected depending on the pH to be adjusted, and examples of the acid include hydrochloric acid, sulfuric acid, nitric acid, phosphoric acid, and carboxylic acid, and examples of the base include sodium hydroxide, potassium hydroxide, and aqueous ammonia. Examples of the pH buffer include carboxylic acids such as citric acid, tartaric acid, malic acid, and phthalic acid; phosphoric acids such as orthophosphoric acid, phosphorous acid, hypophosphorous acid and pyrophosphoric acid, and phosphates such as potassium salts, sodium salts and ammonium salts thereof; boric acid, tetraboric acid, and the like. The concentration of the buffer is not particularly limited, and may be adjusted by adding it as appropriate so as to achieve the desired pH.

Ammonium chloride (NH)₄Cl)

By increasing the ammonium chloride concentration in the electroless Pt plating bath, the plating bath stability, specifically plating, can be prevented from precipitation of Pt particles by holding for at least several days, preferably 30 to 60 days, for example, in a temperature range of 50 to 90 ℃. Further, by increasing the ammonium chloride concentration in the electroless Pt plating bath, a Pt plating film having excellent coating properties can be formed, and the diffusion preventing effect can be exhibited. From the viewpoint of further improving such effects, the ammonium chloride concentration in the electroless Pt plating bath is preferably 0.001g/L or more, more preferably 0.01g/L or more, and still more preferably 0.1g/L or more. Although the effect can be improved as the upper limit of the ammonium chloride concentration is higher, if it is too high, it is necessary to add a buffer to maintain the pH of the plating bath, and thus it is necessary to adjust other components of the plating bath, and therefore, it is preferably less than 20g/L, more preferably 15g/L or less, still more preferably 10g/L or less, further more preferably 5g/L or less, and particularly preferably 1g/L or less.

The electroless Pt plating bath of the present invention may be composed of a water-soluble platinum compound, a reducing agent, a buffer and ammonium chloride, and may also contain other additives. Examples of the other additives include various known additives. The electroless Pt plating bath of the present invention may contain inevitable impurities within a range not impairing the effects of the present invention.

The electroless plating treatment conditions using the electroless Pt plating bath of the present invention can be carried out by appropriately adjusting the treatment conditions used in conventional electroless Pt plating baths, and the temperature at the time of plating is preferably 50 ℃ or higher, more preferably 60 ℃ or higher, further preferably 70 ℃ or higher, preferably 90 ℃ or lower, and more preferably 80 ℃ or lower. The treatment time may be appropriately adjusted depending on the desired film thickness to be formed, and is preferably 1 minute or more, more preferably 5 minutes or more, preferably 60 minutes or less, and more preferably 10 minutes or less.

Formation of Au layer

After the Pt layer 5 is formed, the Au layer 6 is formed. The method for forming the Au layer 6 is not particularly limited, and various known methods can be used. After the passivation film is preferably formed and the Pt layer 5 is formed by the electroless plating method, the electroless plating process is preferably continued to form the Au layer 6. When the Au layer 6 is formed by electroless plating, various known treatment conditions can be employed, and the composition, pH, treatment temperature, treatment time, and the like of the electroless plating bath are not particularly limited.

Formation of Ag layer

After the Pt layer 5 is formed, an Ag layer 6 may be formed instead of the Au layer 6. The method for forming the Ag layer 6 is not particularly limited, and it can be formed by various known methods. In the case where the Pt layer 5 is formed by electroless plating after the passivation film is formed, the Ag layer 6 is preferably formed by continuing the electroless plating process. When the Ag layer 6 is formed by electroless plating, various known treatment conditions can be employed, and the composition, pH, treatment temperature, treatment time, and the like of the electroless plating bath are not particularly limited.

After the Au layer 6 or the Ag layer 6 is formed, the passivation film is removed. Then, various known post-treatments such as a cleaning treatment may be performed as necessary. By the above-described production method, the conductive bump 7 of the present invention in which at least [ base conductive layer 3], [ Pd layer 4], [ Pt layer 5], and [ Au layer 6 or Ag layer 6] are formed in this order from the substrate 10 side can be produced.