阅读说明：本技术 半导体功率模块 (Semiconductor power module ) 是由 谷昌和 于 2017-05-30 设计创作，主要内容包括：本发明的半导体功率模块构成为具备：第一电极,该第一电极通过在Y方向排列并安装多列由配置于X方向的多个半导体元件构成的元件列而成；第一主布线,该第一主布线与安装于第一电极的各元件列相连；第一传感器,该第一传感器安装于第一检测对象元件,该第一检测对象元件是安装于第一电极的多列元件列中、最不受第一主布线的合成电感影响的半导体元件；第一控制端子,该第一控制端子配置于第一电极上；以及控制基板,该控制基板基于经由第一控制端子获得的第一传感器的检测结果,来控制流过第一检测对象元件的电流。(The semiconductor power module of the present invention includes: a first electrode formed by arranging and mounting a plurality of element rows each including a plurality of semiconductor elements arranged in an X direction in a Y direction; a first main wiring connected to each element row mounted on the first electrode; a first sensor mounted on a first detection target element which is a semiconductor element mounted on the first electrode in the element rows of the plurality of columns and which is least affected by the synthetic inductance of the first main wiring; a first control terminal disposed on the first electrode; and a control substrate that controls a current flowing through the first detection object element based on a detection result of the first sensor obtained via the first control terminal.)

1. A semiconductor power module, comprising:

a first electrode formed by arranging and mounting a plurality of element rows each including a plurality of semiconductor elements arranged in an X direction in a Y direction perpendicular to the X direction;

a first main wiring connected to each element row mounted on the first electrode;

a first sensor mounted on a first detection target element which is a semiconductor element mounted on the first electrode in the element rows of the plurality of columns and which is least affected by the synthetic inductance of the first main wiring;

a first control terminal disposed on the first electrode; and

and a control board connected to the first sensor via the first control terminal, the control board controlling a current flowing through the first detection target element based on a detection result of the first sensor obtained via the first control terminal.

2. The semiconductor power module of claim 1,

further comprises a cooler for cooling the plurality of semiconductor elements,

the first detection target element is disposed on the most downstream side of the flow of the refrigerant of the cooler flowing in the X direction.

3. The semiconductor power module according to claim 1 or 2,

the first main wiring has:

a first linear portion connected to each element row mounted on the first electrode and extending in the X direction;

a second linear portion that faces the first linear portion and extends in the X direction; and

a connecting portion connecting one end of the first linear portion with one end of the second linear portion,

the first detection target element is a semiconductor element having the shortest wiring length to an end of the first main wiring in the element rows having the plurality of columns.

4. The semiconductor power module according to any one of claims 1 to 3,

there are three or more columns of the elements arranged,

a temperature sensor is mounted on the semiconductor elements of the element rows other than the element row at the end.

5. The semiconductor power module of claim 1, further comprising,

a second electrode formed by arranging and mounting a plurality of element rows each including a plurality of semiconductor elements arranged in the X direction in the Y direction;

a second main wiring connected to each element row mounted on the second electrode;

a second sensor mounted on a second detection target element that is a semiconductor element mounted on the second electrode in the element rows of the plurality of columns and that is least affected by the combined inductance of the second main wiring; and

a second control terminal disposed on the second electrode,

the control board is connected to the second sensor via the second control terminal, and further controls a current flowing through the second detection target element based on a detection result of the second sensor obtained via the second control terminal.

6. The semiconductor power module of claim 5,

further comprising a third main wiring disposed on the first main wiring and the second main wiring so as to face the first main wiring and the second main wiring,

an end portion of the third main wiring is connected to the second electrode,

an end portion of the second main wiring is connected to the first electrode,

the first main wiring has a straight line portion connected to each element row mounted on the first electrode and extending in the X direction,

the second main wiring has a straight portion connected to each element row mounted on the second electrode and extending in the X direction,

the third main wiring has:

a first concave portion disposed on the first detection target element so as to face the first detection target element attached to the first electrode;

a second concave portion disposed on the second detection target element so as to face the second detection target element attached to the second electrode; and

a linear portion connecting one end of the first concave portion and one end of the second concave portion, the linear portion being opposed to the linear portion of the first main wiring and the linear portion of the second main wiring and extending in the X direction,

a distance between the first concave portion of the third main wiring and the straight portion of the first main wiring is smaller than a distance between the straight portion of the third main wiring and the straight portion of the first main wiring,

an interval between the second concave portion of the third main wiring and the straight portion of the second main wiring is smaller than an interval between the straight portion of the third main wiring and the straight portion of the second main wiring.

7. The semiconductor power module of claim 5,

an end portion of the first main wiring is connected to the second electrode,

the first main wiring has a straight line portion connected to each element row mounted on the first electrode and extending in the X direction,

the second main wiring has:

a first linear portion connected to each element row mounted on the second electrode and extending in the X direction;

a second linear portion extending in the X direction, the second linear portion being opposed to the first linear portion and the linear portion of the first main wiring;

a connecting portion that connects one end of the first linear portion and one end of the second linear portion; and

a concave portion connected to the other end of the second linear portion and disposed on the first detection object element so as to face the first detection object element attached to the first electrode,

an interval between the concave portion of the second main wiring and the straight portion of the first main wiring is smaller than an interval between the second straight portion of the second main wiring and the straight portion of the first main wiring.

8. The semiconductor power module of claim 5,

an end portion of the second main wiring is connected to the first electrode,

the first main wiring has:

a first linear portion connected to each element row mounted on the first electrode and extending in the X direction;

a second linear portion that faces the first linear portion and extends in the X direction; and

a connecting portion connecting one end of the first linear portion with one end of the second linear portion,

the second main wiring has:

a first linear portion connected to each element row mounted on the second electrode and extending in the X direction;

a second linear portion that faces the first linear portion and extends in the X direction; and

and a connecting portion connecting one end of the first linear portion and one end of the second linear portion.

9. The semiconductor power module of claim 5,

an end portion of the first main wiring is connected to the second electrode,

the second main wiring has a straight portion connected to each element row mounted on the second electrode and extending in the X direction,

the first main wiring has:

a first linear portion connected to each element row mounted on the first electrode and extending in the X direction;

a second linear portion extending in the X direction, the second linear portion being opposed to the linear portion of the second main wiring and the first linear portion; and

and a connecting portion connecting one end of the first linear portion and one end of the second linear portion.

10. The semiconductor power module of claim 5,

further comprises a cooler for cooling the plurality of semiconductor elements,

the first electrode is disposed on the upper surface side of the cooler,

the second electrode is disposed on a lower surface side of the cooler,

an end portion of the second main wiring is connected to the first electrode,

the first main wiring has:

a first linear portion connected to each element row mounted on the first electrode and extending in the X direction;

a second linear portion that faces the first linear portion and extends in the X direction; and

a connecting portion connecting one end of the first linear portion with one end of the second linear portion,

the second main wiring has:

a first linear portion connected to each element row mounted on the second electrode and extending in the X direction;

a second linear portion that faces the first linear portion and extends in the X direction; and

and a connecting portion connecting one end of the first linear portion and one end of the second linear portion.

11. The semiconductor power module according to any one of claims 1 to 10,

the sensor is a temperature sensor or a current sensor.

12. The semiconductor power module according to any one of claims 1 to 11,

the semiconductor element is formed of a wide bandgap semiconductor.

Technical Field

The present invention relates to a semiconductor power module configured by arranging a plurality of element rows each including a plurality of semiconductor elements.

Background

Conventionally, a temperature detection device has been proposed which detects the temperature of a semiconductor module including a plurality of semiconductor elements (see, for example, patent document 1). The temperature detection device described in patent document 1 includes: temperature detection diodes provided in the respective semiconductor elements and connected in parallel with each other; and a temperature detection circuit connected to the temperature detection diodes connected in parallel, and configured to detect a temperature of the semiconductor module based on an output voltage of the temperature detection diodes in a parallel connection state.

Disclosure of Invention

Technical problem to be solved by the invention

In a semiconductor power module, a temperature sensor and a current sensor are mounted on a semiconductor element in order to prevent thermal damage and overcurrent damage of the semiconductor element. In order to increase the capacity of the semiconductor power module, it is considered to form the semiconductor element from a wide band gap semiconductor such as silicon carbide and gallium nitride.

However, since the wafer substrate of the wide band gap semiconductor has a high defect density, the manufacturing yield of the semiconductor device is low, and as a result, the device size of the semiconductor device is not easily increased. Therefore, the semiconductor element constituting the semiconductor power module is required to be constituted by connecting a plurality of semiconductor elements having small element sizes in parallel.

Here, in the conventional technique described in patent document 1, since temperature detection is performed based on the output voltage in the parallel connection state of the plurality of temperature detection diodes, for example, when three temperature detection diodes are connected in parallel, the temperature detection error is 14 ℃. Therefore, an excessive redundancy is required for the allowable temperature of the semiconductor power module, and as a result, it is difficult to increase the output of the power conversion device in which the semiconductor power module is mounted.

In the conventional technique described in patent document 1, since it is necessary to mount temperature detection diodes on all semiconductor elements constituting the semiconductor module, the manufacturing cost increases. Further, since the temperature detection diode needs to be electrically connected to the temperature detection circuit, a space for providing connection wiring is increased, and as a result, a power conversion device in which the semiconductor power module is mounted is increased in size.

The present invention has been made to solve the above-described problems, and an object of the present invention is to obtain a semiconductor power module which contributes to a large output and a small size of a power conversion device.

Technical scheme for solving technical problem

The semiconductor power module of the present invention includes: a first electrode formed by arranging and mounting a plurality of element rows each including a plurality of semiconductor elements arranged in an X direction in a Y direction perpendicular to the X direction; a first main wiring connected to each element row mounted on the first electrode; a first sensor mounted on a first detection target element which is a semiconductor element mounted on the first electrode in the element rows of the plurality of columns and which is least affected by the synthetic inductance of the first main wiring; a first control terminal disposed on the first electrode; and a control substrate connected to the first sensor via a first control terminal, the control substrate controlling a current flowing through the first detection object element based on a detection result of the first sensor obtained via the first control terminal.

Effects of the invention

According to the present invention, a semiconductor power module that contributes to achieving a large output and a small size of a power conversion device can be obtained.

Drawings

Fig. 1 is a perspective view of a semiconductor power module according to embodiment 1 of the present invention.

Fig. 2 is a top view of fig. 1.

Fig. 3 is a sectional view taken along line I-I of fig. 2.

Fig. 4 is a plan view of the semiconductor power module according to embodiment 2 of the present invention.

Fig. 5 is a sectional view taken along line II-II of fig. 4.

Fig. 6 is a plan view of a semiconductor power module according to embodiment 3 of the present invention.

Fig. 7 is a sectional view taken along the line III-III of fig. 6.

Fig. 8 is a plan view of a semiconductor power module according to embodiment 4 of the present invention.

Fig. 9 is a sectional view taken along line IV-IV of fig. 8.

Fig. 10 is a plan view of a semiconductor power module according to embodiment 5 of the present invention.

Fig. 11 is a sectional view taken along line V-V of fig. 10.

Fig. 12 is a plan view of a semiconductor power module according to embodiment 6 of the present invention.

Fig. 13 is a sectional view taken along line VI-VI of fig. 12.

Fig. 14 is a circuit diagram showing an inverter as an example of a power conversion device to which the semiconductor power module according to embodiments 1 to 6 of the present invention is applied.

Detailed Description

The semiconductor power module according to the present invention will be described below with reference to preferred embodiments with reference to the accompanying drawings. In the description of the drawings, the same or corresponding portions are denoted by the same reference numerals, and redundant description is omitted. The present invention is also applicable to a power converter mounted in a plug-in hybrid vehicle, an electric vehicle, or the like, for example.

First, a power conversion device to which the present invention is applied will be described. The power conversion apparatus has a switching circuit for power conversion. As specific examples of the power conversion device, the following electric power components are listed: the vehicle-mounted battery charger includes a motor driving inverter mounted on the electric vehicle, a step-down converter for converting a voltage from a high voltage to a low voltage, and a charger connected to an external power supply device to charge a vehicle-mounted battery.

An inverter, which is an example of a power conversion device, will be described below with reference to fig. 14. Fig. 14 is a circuit diagram showing an inverter as an example of a power conversion device to which the semiconductor power module according to embodiments 1 to 6 of the present invention is applied.

The inverter shown in fig. 14 is composed of semiconductor power modules 301 to 306, and for example, a dc power supply is connected to an input side, and a motor having a U-phase winding, a V-phase winding, and a W-phase winding is connected to an output side.

The semiconductor power modules 301 to 306 include switching elements Q1 to Q6, respectively. The upper arm-side switching elements Q1, Q3, and Q5 are connected to the positive side (P side) of the dc power supply, and the lower arm-side switching elements Q2, Q4, and Q6 are connected to the negative side (N side) of the dc power supply.

The switching elements Q1 and Q2 correspond to the U-phase, the switching elements Q3 and Q4 correspond to the V-phase, and the switching elements Q5 and Q6 correspond to the W-phase.

The semiconductor devices mounted on the semiconductor power modules 301 to 106 are, for example, MOS-FETs, IGBTs, diodes, and the like, and as a wafer substrate for manufacturing the semiconductor devices, a wide band gap semiconductor is used in addition to silicon.

Here, for example, when the propulsion vehicle is electrically driven, the inverter for driving the motor is required to have a large capacity. In order to increase the capacity of the inverter, it is conceivable to use a wide bandgap semiconductor as a wafer substrate, and further increase the device size of the semiconductor device. However, in this case, since the wafer substrate has a high defect density, the manufacturing yield of the semiconductor device is low, and as a result, the manufacturing cost of the inverter is high. Therefore, the semiconductor elements included in the semiconductor power modules of the inverter are formed by connecting a plurality of semiconductor elements having small element sizes in parallel.