阅读说明：本技术 一种大功率驱动电路的eHSOP5L引线框架及其封装件和生产方法 (eHSOP5L lead frame of high-power drive circuit, packaging part and production method thereof ) 是由 李琦 李习周 祁越 何文海 于 2019-10-24 设计创作，主要内容包括：本发明公开了一种大功率驱动电路的eHSOP5L引线框架及其封装件和生产方法,引线框架位多排矩阵式双连杆单基岛引线框架,基岛上端设有五个头部为T形尾部为矩形且与引线框架本体相连的内引脚,所述基岛的下端设有宽度相同的两个散热片,两个散热片之间设有长方形第二应力释放槽,所述散热片的一端与基岛连接,所述散热片与基岛的连接处设有π形锁胶孔,所述基岛的两侧分别设有两个双连杆,所述双连杆与引线框架本体相连；本发明引线框架厚度小,价格低,生产采用环保材料,冲切型的生产工艺采用低成本IC封装件用铜合金电镀引线框架,并且有利于环境保护和使用者身体健康,具有小型化、高可靠性、更短的封装周期、低成本等众多优势。(The invention discloses an eHSOP5L lead frame of a high-power drive circuit, a packaging piece and a production method thereof.A lead frame is provided with a multi-row matrix type double-connecting-rod single-base-island lead frame, the upper end of a base island is provided with five inner pins, the heads of the inner pins are T-shaped, the tails of the inner pins are rectangular and are connected with a lead frame body, the lower end of the base island is provided with two radiating fins with the same width, a rectangular second stress release groove is arranged between the two radiating fins, one end of each radiating fin is connected with the base island, the connecting part of each radiating fin and the base island is provided with a Pi-shaped glue locking hole, two sides of the base island are respectively provided with two; the lead frame is small in thickness and low in price, environment-friendly materials are adopted in production, the copper alloy for the IC packaging part is adopted in the punching type production process to electroplate the lead frame, the environment protection and the body health of a user are facilitated, and the lead frame has the advantages of being small in size, high in reliability, short in packaging period, low in cost and the like.)

1. The utility model provides a high-power drive circuit's ehsoop 5L lead frame, includes the lead frame body, be equipped with a plurality of lead frame unit groups that are array arrangement on the lead frame body, its characterized in that: horizontal every lead frame unit group (2) comprises first lead frame part (3) and second lead frame part (4), first lead frame part (3) and second lead frame part (4) comprise two lead frame units (5) respectively, and the outer pin of two adjacent lines of frame units (5) adopts the mode of staggering alternately each other to arrange, is equipped with technology groove (7) between first lead frame part (3) and second lead frame part (4), is equipped with first stress release groove (8) between two adjacent lead frame unit groups (2), be equipped with base island (6) on lead frame unit (5), base island (6) upper end is equipped with five heads and is the interior pin that the T shape afterbody links to each other for the rectangle and with lead frame body (1), is first interior pin (18), second interior pin (19) in proper order, The lead frame is characterized in that the third inner pin (20), the fourth inner pin (21) and the fifth inner pin (22) are arranged, the lower end of the base island (6) is provided with two radiating fins (16) with the same width, a rectangular second stress release groove (9) is formed between the two radiating fins (16), one end of each radiating fin (16) is connected with the base island (6), the connecting part of each radiating fin (16) and the corresponding base island (6) is provided with a pi-shaped glue locking hole (C), two sides of the base island (6) are respectively provided with two double connecting rods (B), and the double connecting rods (B) are connected with the lead frame body (1).

2. The eHSOP5L lead frame for high power driver circuit as claimed in claim 1, wherein: and the tops of the first lead frame part (3) and the second lead frame part (4) are respectively provided with a circular frame anti-reflection hole (14) and an oval frame anti-reflection hole (15).

3. The eHSOP5L lead frame for high power driver circuit as claimed in claim 1, wherein: the lead frame is 249.60mm +/-0.10 mm in length, 79.50 mm +/-0.05 mm in width and 0.19mm-0.21mm in thickness, and comprises 120 lead frame units (5) which are arranged in 6 rows and 20 columns.

4. A method for producing an eHSOP5L package of a high-power driving circuit is characterized by comprising the following steps:

a. wafer thinning

Thinning by using a thinning machine, wherein the final thickness of the wafer is as follows: the first chip is 100-120 μm thick, and the second chip is 200-300 μm thick; the coarse grinding speed is less than or equal to 35 mu m/min; the precision speed is less than or equal to 10 mu m/min, the film is cleaned by eliminating stress, and a thinning adhesive film is adhered to the back surface of the film;

b. scribing

Scribing by using a double-scribing-blade scribing machine, wherein the first cutter firstly scribes 30% of the thickness and forms grooves, the second cutter scribes 70% of the thickness, the scribing feed speed is controlled to be less than or equal to 10mm/s, and cleaning and drying are carried out in time;

c. upper core

The lead frame according to any one of claims 1 to 3, after automatic loading, the chip is packaged in a stack by a two-time core loading process, specifically comprising:

core feeding for the first time: the core installing machine adheres the first chip (10) on the lead frame, and the first chip (10) is adhered on the chip installation area of the base island (6) by using an environment-friendly high-silver conductive adhesive by using a 2mm multiplied by 2mm chip suction nozzle and a dispensing head;

baking on the core for the first time: the whole lead frame with the first chip (10) adhered is sent to a transfer box and is conveyed to an oven, and the whole lead frame is baked in the oven by adopting a layering prevention and segmentation baking process;

and (3) core feeding for the second time: fixing a wafer of a second chip (11) with a DAF film adhered to the back surface before scribing by using equipment with a function of core-mounting a rubber film sheet, automatically feeding the equipment, then sending a semi-finished lead frame adhered with a first chip (10) to a sheet adhering table, heating a substrate to 120 ℃, adsorbing the second chip (11) with the DAF film, and placing the second chip on the front surface of the first chip (10);

second core feeding baking: after all the lead frames of the second chips (11) are pasted, the lead frames are sent to a transmission box and are sent to an oven, and then the lead frames are baked in the oven by adopting an anti-layering segmented baking process;

d. pressure welding

The pressure welding implements gold wire or copper wire bonding low radian control technology, adopting the combination of flat arc and positive and negative striking, and the high-grade arc shape of sharp corner and the high-grade arc shape of flat corner, controlling the arc height to be less than or equal to 150 μm, bonding the first chip and the second chip, the second chip and the inner pin, the first chip and the inner pin, the upper chip and the base island by welding wires;

e. plastic encapsulation and post-curing

Selecting an environment-friendly plastic package material, and adopting the processes of ultrathin anti-warping, reducing and eliminating delamination to reduce the wire punching rate and reduce the turn-up or turn-back, wherein the curing time is reduced by 10-30 s compared with the normal curing time; during post-curing, the semi-finished material strip of the lead frame of the IC package is aged for 5 hours in an oven at 175 ℃, and gradually becomes soft, the warping degree of the plastic package body meets the requirements of printing, stamping and forming packaging processes, and the flash of the radiating fin is not more than 10% of the area of the radiating fin;

f. electroplating of

The automatic plating line is adopted to carry out the tin plating process on the packaging piece and the leaked copper alloy plating lead wire, so that the surface of the connecting pin is plated with soldering tin, and the thickness of the plating layer is 11.43 +/-3.81 mu m;

g. printing

Marking on the surface of the plastic package body by adopting a fixture type fixing, double laser heads and a continuous feeding, positioning and printing mode;

h. cutting ribs and separating by shaping

A special rib cutting die is adopted to cut off the double connecting rods connected on the lead frame, the clearance between a rib cutting tool and the plastic package body is larger than 0.075mm, and meanwhile plastic package residues on the surface of the die are cleaned, so that the damage of a colloid caused by padding is reduced;

i. testing and packaging

A special testing machine and a special sorting machine are adopted to test appearance and functional parameters, so that products provided by customers can be used on the machine, and the use requirements of the packaging parts are met; then packaging into a warehouse to prepare an eHSOP5L package of the high-power driving circuit.

5. The method for producing an eHSOP5L package of a high power driver circuit as claimed in claim 4, wherein: the coarse grinding thickness range in the step a is from 550-800 μm of the thickness of the original wafer plus 120 μm of the thickness of the glue film to 120 μm of the final thickness plus 120 μm of the thickness of the glue film plus 50 μm, the precision thickness range is from 120 μm of the final thickness plus 120 μm of the thickness of the glue film plus 50 μm to 150 μm of the final thickness of the wafer plus 120 μm of the thickness of the glue film, and a chip warpage preventing process is adopted.

6. An ehson 5L package for a high power driver circuit produced by the production method as set forth in claim 4, wherein: comprising a first chip (10), a second chip (11), and a lead frame unit (5) as claimed in claim 1, wherein the first chip (10) is adhered to the chip mounting area of the base island (6) by using a high silver conductive adhesive, the second chip (11) is adhered to the surface of the first chip (10) by using a DAF film stack, pads on the surfaces of the first chip (10) and the second chip (11) are connected with corresponding inner pins and base-carrying islands (6) by lead bonding wires, the first chip (10), the second chip (11) and the base island (6) are all plastically packaged in a plastic package body (12), exposed parts of two heat dissipation fins (16) are arranged on the plastic package body (12), and five independent outer pins with a tinning interval of 1.70mm are arranged on the lower row and connected with the first inner pin (18), the second inner pin (19), the third inner pin (20), the fourth inner pin (21) and the fifth inner pin (22), the first outer pin (23), the second outer pin (24), the third outer pin (25), the fourth outer pin (26) and the fifth outer pin (27) are respectively arranged, and the protrusion of the five independent tinned outer pins out of the plastic package body (12) is 0.5-1.0 mm.

7. The eHSOP5L package for high power driver circuit as claimed in claim 6, wherein: the first chip (10) is connected with a second chip (11) through a first bonding wire (X1), and the second chip (11) is connected with a fourth inner pin (21) through a third bonding wire (X3); the first chip (10) is connected with the first inner pin (18) through a second bonding wire (X2), and the first chip (10) is connected with the base island (6) through a fourth bonding wire (X4).

8. An ehsnop-5L package for high power driver circuit as claimed in claim 6 wherein: the plastic package body (12) is provided with a first pin mark (17).

9. An ehsnop-5L package for high power driver circuit as claimed in claim 6 wherein: the thickness of the package is 1.60 mm + -0.05 mm.

Technical Field

The invention belongs to the field of IC chip integrated circuit packaging, and particularly relates to an eHSOP5L lead frame of a high-power driving circuit, a packaging part and a production method thereof.

Background

Integrated Circuit (IC) is a new technology introduced into china in the last 30 years. It is characterized by that the integrated circuit IC chip with the functions of storage and operation, etc. is packaged in a plastic material, so that it can be used as carrier for storing, transferring and processing data. In order to adapt to the development direction of lighter, thinner and smaller integrated circuits of the packaging technology, the packaging technology has the advantages of low failure rate, high density, miniaturization, space saving, lower cost, good heat dissipation and the like, can shorten the time of the product on the market, and reduces the investment risk. The high-power small colloid packaging technology has the advantages of being packaged abroad, small in size, high in heat dissipation performance and the like, just conforms to the development trend of integrated circuit products, and the IC packaging part is low in cost, small in size, light in weight, strong in anti-interference capability, convenient to carry, easy to use, better in confidentiality and long in service life. In recent 10 years, the industry market acceleration is maintained at 15% -20% every year, and the industrial market acceleration has the advantages of large information storage capacity, good safety and confidentiality, rapid storage and the like, is widely applied to various fields such as telecommunication, household appliances, commerce and trade, transportation, urban public service management and the like, and obtains preliminary social benefit and economic benefit. However, in order to meet the requirements of high reliability, high voltage and high insulation, the packaging of a high-power driving circuit at home at present adopts an SOP or DIP packaging form, so that the packaging structure has the defects of more pins, large volume and more material consumption, and has a larger gap with similar products at home and abroad.

The eHSOP (Small Outline Package with exposed thermal pad and Heat sink) type small-Outline integrated circuit packaging technology is a novel SMT technology (surface mount technology), and the eHSOP technology is developed on the basis of the existing SOP technology, so that the technical level of the domestic integrated circuit packaging technology can be rapidly improved. The ehsnop packaging product has the advantages of miniaturization, high reliability, shorter packaging period, low cost and the like. The product adopting the eHSOP packaging technology can be widely applied to various fields such as LED lamps, handheld mobile terminals of power adapters, consumer electronics, personal computers, peripheries, networks, telecommunication equipment, medical equipment, office equipment, automotive electronics, industrial control equipment and the like, and has wider market prospect.

Disclosure of Invention

The present invention is directed to an ehsnop 5L leadframe for a high power driver circuit, which solves the above problems of the prior art.

Another object of the present invention is to provide a package formed by ehspo 5L lead frame of high power driving circuit.

Another object of the present invention is to provide a method for producing an ehsnop 5L package for high power driver circuits.

In order to achieve the purpose, the invention adopts the technical scheme that: the utility model provides a high-power drive circuit's ehsnop 5L lead frame, includes the lead frame body, be equipped with a plurality of lead frame unit groups that are the array and arrange on the lead frame body, horizontal each lead frame unit group comprises first lead frame part and second lead frame part, first lead frame part and second lead frame part comprise two lead frame units respectively, and the outer pin of two adjacent lines of frame units adopts crisscross mode range of staggering each other, is equipped with the technology groove between first lead frame part and the second lead frame part, is equipped with first stress release groove between two adjacent lead frame unit groups, be equipped with the base island on the lead frame unit, the base island upper end is equipped with five heads and is the interior pin that the T shape afterbody is the rectangle and links to each other with the lead frame body, is first interior pin, second interior pin in proper order, The lower end of the base island is provided with two radiating fins with the same width, a rectangular second stress release groove is formed between the two radiating fins, one end of each radiating fin is connected with the base island, a pi-shaped glue locking hole is formed in the joint of each radiating fin and the base island, two double connecting rods are arranged on two sides of the base island respectively and connected with the lead frame body.

Furthermore, the tops of the first lead frame part and the second lead frame part are respectively provided with a circular frame anti-reflection hole and an oval frame anti-reflection hole.

Further, the lead frame has the length of 249.60mm +/-0.10 mm, the width of 79.50 mm +/-0.05 mm and the thickness of 0.19mm-0.21mm, and comprises 120 lead frame units arranged in 6 rows and 20 columns.

The invention provides a production method of an eHSOP5L packaging piece of a high-power driving circuit, which comprises the following steps:

a. wafer thinning

Thinning by using a thinning machine, wherein the final thickness of the wafer is as follows: the first chip is 100-120 μm thick, and the second chip is 200-300 μm thick; the coarse grinding speed is less than or equal to 35 mu m/min; the precision speed is less than or equal to 10 mu m/min, the film is cleaned by eliminating stress, and a thinning adhesive film is adhered to the back surface of the film;

b. scribing

Scribing by using a double-scribing-blade scribing machine, wherein the first cutter firstly scribes 30% of the thickness and forms grooves, the second cutter scribes 70% of the thickness, the scribing feed speed is controlled to be less than or equal to 10mm/s, and cleaning and drying are carried out in time;

c. upper core

The lead frame according to any one of claims 1 to 3, after automatic loading, the chip is packaged in a stack by a two-time core loading process, specifically comprising:

core feeding for the first time: the core installing machine adheres the first chip to the lead frame, and the first chip is adhered to the chip installation area of the base island by using an environment-friendly high-silver conductive adhesive through a 2mm multiplied by 2mm chip suction nozzle and a dispensing head;

baking on the core for the first time: the whole lead frame with the first chip adhered is sent to a transfer box and is conveyed to an oven, and the whole lead frame is baked in the oven by adopting a layering and segmenting preventing baking process;

and (3) core feeding for the second time: fixing a wafer of a second chip with a DAF film stuck on the back surface before scribing by using equipment with a function of gluing the chip on the film, automatically feeding the equipment, then sending a semi-finished product lead frame stuck with a first chip to a chip sticking table, heating the substrate to 120 ℃, adsorbing the second chip with the DAF film, and placing the second chip on the front surface of the first chip;

second core feeding baking: after all the lead frames of the second chips are pasted, sending the lead frames to a transmission box, and baking the lead frames in an oven by adopting a layering and segmentation preventing baking process after the lead frames are sent to the oven;

d. pressure welding

The pressure welding implements gold wire or copper wire bonding low radian control technology, adopting the combination of flat arc and positive and negative striking, and the high-grade arc shape of sharp corner and the high-grade arc shape of flat corner, controlling the arc height to be less than or equal to 150 μm, bonding the first chip and the second chip, the second chip and the inner pin, the first chip and the inner pin, the upper chip and the base island by welding wires;

e. plastic encapsulation and post-curing

Selecting an environment-friendly plastic package material, adopting the process of ultrathin anti-warping, reducing and eliminating delamination to reduce the wire punching rate and reduce the turn-up or turn-back, and reducing the curing time by 10-30S compared with the normal curing time; during post curing, the semi-finished material strip of the lead frame of the IC package is aged in an oven at 175 ℃ for 5 hours and gradually becomes soft, the warping degree of the plastic package body meets the requirements of printing, stamping and forming packaging processes, and the flash of the radiating fin is not more than 10% of the area of the radiating fin.

f. Electroplating of

The automatic plating line is adopted to carry out the tin plating process on the packaging piece and the leaked copper alloy plating lead wire, so that the surface of the connecting pin is plated with soldering tin, and the thickness of the plating layer is 11.43 +/-3.81 mu m;

g. printing

Marking on the surface of the plastic package body by adopting a fixture type fixing, double laser heads and a continuous feeding, positioning and printing mode;

h. cutting ribs and separating by shaping

A special rib cutting die is adopted to cut off the double connecting rods connected on the lead frame, the clearance between a rib cutting tool and the plastic package body is larger than 0.075mm, and meanwhile plastic package residues on the surface of the die are cleaned, so that the damage of a colloid caused by padding is reduced;

i. testing and packaging

A special testing machine and a special sorting machine are adopted to test appearance and functional parameters, so that products provided by customers can be used on the machine, and the use requirements of the packaging parts are met; then packaging into a warehouse to prepare an eHSOP5L package of the high-power driving circuit.

Further, the rough grinding thickness range in the step a is from 550 μm to 800 μm of the original wafer thickness + 120 μm of the glue film thickness to 120 μm of the final thickness + 120 μm of the glue film thickness +50 μm of the final thickness, the precision thickness range is from 120 μm of the final thickness + 120 μm of the glue film thickness +50 μm of the final thickness to 150 μm of the wafer thickness + 120 μm of the glue film thickness, and a chip warpage prevention process is adopted.

The invention relates to an eHSOP5L packaging piece of a high-power driving circuit, which is produced by adopting the production method and comprises a first chip, a second chip and a lead frame unit, wherein the first chip is adhered to a chip mounting area of a base island by using high-silver conductive adhesive, the second chip is adhered to the surface of the first chip by using DAF film stacking, bonding pads on the surfaces of the first chip and the second chip are connected with corresponding inner pins and carrier base islands through lead bonding wires, the first chip, the second chip and the base island are all plastically packaged in a plastic packaging body, exposed parts of two radiating fins are arranged on the plastic packaging body, five independent tinned outer pins which are connected with the first inner pin, the second inner pin, the third inner pin, the fourth inner pin and the fifth inner pin and have the interval of 1.70mm are arranged on the lower row, and are respectively a first outer pin, a second outer pin, a third outer pin, a fourth outer pin and a fourth outer pin, And the fifth outer pin, five independent tinned outer pins, protrudes out of the plastic package body by 0.5 mm-1.0 mm.

Furthermore, the first chip is connected with a second chip through a first bonding wire, and the second chip is connected with a fourth inner pin through a third bonding wire; the first chip is connected with the first inner pin through a second bonding wire, and the first chip is connected with the base island through a fourth bonding wire X4.

Furthermore, a first pin mark is arranged on the plastic package body.

Further, the thickness of the package is 1.60 mm ± 0.05 mm.

The invention has the beneficial effects that:

1. the lead frame is small in thickness and low in price, is a multi-row matrix lead frame, is made of materials with the thickness of 0.19-0.21 mm, is thinner than a common copper-clad PCB (printed circuit board) by 0.023-0.06 mm, is higher in production efficiency and packaging yield than the copper-clad PCB, is made of environment-friendly materials, is plated with the lead frame by using the copper alloy for the low-cost IC packaging part in the punching production process, and is beneficial to environmental protection and body health of a user; the method has the advantages of miniaturization, high reliability, shorter packaging period, low cost and the like. .

2. The connecting part of the base island and the double radiating fins is provided with the Pi-shaped glue locking hole, so that part of the base island and the pins which are encapsulated up and down are firmly combined with the plastic packaging material, the reliability of a product is improved, the length of a bonding welding wire is reduced, the current and signal transmission distance is shortened, and the electrical property is improved.

3. The exposed base island is directly connected with the double radiating fins, so that the radiating performance of the product is greatly improved, and the product has high reliability and high radiating performance; and the outer pins of two adjacent rows of frame units on the lead frame are arranged in a mutually crossed staggered mode, so that the frame benefit rate is greatly improved.

4. According to the invention, the circular frame anti-reflection hole and the oval frame anti-reflection hole are respectively arranged at the tops of the first lead frame part and the second lead frame part, so that the frames are prevented from being placed reversely.

5. A rectangular second stress release groove is formed between the two radiating fins and used for releasing stress when the rib cutting product is formed and separated, and the packaging piece is prevented from being broken.

Drawings

FIG. 1 is a schematic structural diagram of an eHSOP5L lead frame of a high power driving circuit according to the present invention;

FIG. 2 is a schematic structural diagram of a lead frame unit group according to the present invention;

FIG. 3 is a schematic diagram of a bonding wire for chip packaging according to the present invention;

FIG. 4 is a drawing schematic of the lead frame unit of the present invention;

FIG. 5 is a schematic diagram of a package structure according to the present invention;

FIG. 6 is a cross-sectional view of a package of the present invention;

FIG. 7 is a top core bake temperature profile;

FIG. 8 core stack bake temperature profile.

In the figure: 1. a lead frame body; 2. a lead frame unit group; 3. a first lead frame portion; 4. a second lead frame portion; 5. A lead frame unit; 6. A base island; 7. a process tank; 8. a first stress relief groove; 9. a second stress relief groove; 10. a first chip; 11. a second chip; 12. molding the body; 13. sticking a piece adhesive; 14. the circular frame is provided with an anti-reverse hole; 15. an anti-reverse hole is formed in the oval frame; 16. a heat sink; 17. a first pin identifier; 18. a first inner pin; 19. a second inner pin; 20. a third inner pin; 21. a fourth inner pin; 22. a fifth inner pin; b. A double link; C. a locking hole; 23. a first outer pin; 24. a second outer pin; 25. a third outer pin; 26. a fourth outer pin; 27. A fifth outer pin; x1, a first bond wire; x2, a second wire bond; x3, third bondline; x4, fourth bondline.

Detailed Description

The present invention is described in further detail below with reference to the attached drawing figures.

As shown in fig. 1 and fig. 2, an eHSOP5L lead frame of a high power driver circuit, the lead frame having a length of 249.60mm ± 0.10 mm, a width of 79.50 mm ± 0.05mm and a thickness of 0.19mm-0.21mm, includes 120 lead frame units 5 arranged in 6 rows and 20 rows, and specifically includes a lead frame body 1, a plurality of lead frame unit sets 2 arranged in an array are disposed on the lead frame body 1, each horizontal lead frame unit set 2 is composed of a first lead frame portion 3 and a second lead frame portion 4, the first lead frame portion 3 and the second lead frame portion 4 are respectively composed of two lead frame units 5, outer pins of two adjacent rows of frame units 5 are arranged in a mutually staggered manner, so as to greatly improve the frame benefit rate, a process groove 7 is disposed between the first lead frame portion 3 and the second lead frame portion 4, a first stress release groove 8 is formed between two adjacent lead frame unit groups 2, a base island 6 is arranged on each lead frame unit 5, five inner pins with T-shaped heads and rectangular tails and connected with the lead frame body 1 are arranged at the upper end of each base island 6, and are a first inner pin 18, a second inner pin 19, a third inner pin 20, a fourth inner pin 21 and a fifth inner pin 22 sequentially, two radiating fins 16 with the same width are arranged at the lower end of each base island 6, a rectangular second stress release groove 9 is formed between the two radiating fins 16, one end of each radiating fin 16 is connected with the base island 6, a pi-shaped glue locking hole C is formed at the joint of each radiating fin 16 and the base island 6, two double connecting rods B are arranged on two sides of each base island 6 respectively, and the double connecting rods B are connected with the lead frame body 1; the top of the first lead frame portion 3 and the second lead frame portion 4 are respectively provided with a circular frame anti-reflection hole 14 and an oval frame anti-reflection hole 15 to prevent the frames from being placed reversely.

The invention provides a method for producing an eHSOP5L packaging piece of a high-power driving circuit, which comprises the following specific steps:

a. wafer thinning

The equipment for thinning is a VG502MK II 8B full-automatic thinning machine (Germany), the first chip 10 is a high-power drive circuit MOS chip, the final thickness of the wafer where the first chip 10 is located is 120 mu m, the coarse grinding thickness range is from 550 mu m-800 mu m of the original wafer thickness to 120 mu m of the glue film thickness, the coarse grinding speed is 35 mu m/min till the final thickness is 120 mu m + 120 mu m of the glue film thickness to 50 mu m; the precision thickness range is from the final thickness of 120 mu m + the glue film thickness of 120 mu m +50 mu m to the final thickness of 150 mu m + the glue film thickness of the wafer, the precision speed is 10 mu m/min, and a chip warping prevention process is adopted. The final thickness of the wafer on which the second chip 11 is located is 50 μm; the coarse grinding thickness range is from 550-800 μm of the original wafer thickness plus 120 μm of the glue film thickness to 50 μm of the final thickness plus 120 μm of the glue film thickness plus 30 μm, the coarse grinding speed is 30-35 μm/min, the starting speed is high, and the speed is gradually reduced; the precision thickness range is from the final thickness of 50 mu m + the glue film thickness of 120 mu m +30 mu m to the final thickness of 50 mu m + the glue film thickness of 120 mu m of the wafer, the precision speed is 10 mu m/min, and a chip warping prevention process is adopted;

b. scribing

The method is characterized in that a DISCO DFD6361, a DFD6340, a DFD6560 or a double-blade scribing machine is adopted, the scribing feed speed is controlled to be less than or equal to 10mm/s, the scribing blade is selected to be of a suitable type according to the scribing widths of different products and wafers, and the scribing blade is cleaned and dried in time. Adopting a double-head scribing machine and double-blade scribing, wherein the first blade firstly scribes 30% of the thickness and grooves, and the second blade scribes 70% of the thickness, so as to prevent the splintering and back collapse;

c. upper core

The core feeding machine adopts a general core feeding machine, the shape-preserving conductive adhesive with low stress and low water absorption of viscosity (viscosity >9000 CP) is bonded and selected, the core feeding machine adopts an eHSOP5L lead frame of a high-power driving circuit in the application, and the back is pasted with an anti-overflow glue film. The first chip 10 is relatively large, a 2mm multiplied by 2mm chip suction nozzle and a dispensing head are selected, the first chip 10 is thin and has a size close to that of a base island, the problems of chip side adhesive climbing, overflow, BLT, cavities, bridging and the like exist during chip loading, measures such as an optimized adhesive dispensing tool, relevant process parameters and the like are adopted to solve the problems, the dispensing quality of the adhesive is ensured, the whole lead frame with the first chip adhered is sent to a transmission box and is conveyed to an oven, a layering-preventing and segmenting baking process is adopted in the oven for baking, and a baking curve is shown in figure 7; because the second chip 11 is thinner and smaller, the DAF film is stacked on the first chip 10, after the cores of the two layers of chips are loaded, an oven with good air exhaust amount and uniform internal temperature is selected after the cores are loaded, the oven adopts low-temperature-high-temperature-low-temperature (0-70 ℃ for 30 minutes, 70-150 ℃ for 90 minutes and 150-70 ℃ for 30 minutes) one-time anti-separation layer baking, and the baking curve is shown in figure 8;

d. pressure welding

The pressure welding adopts integrated circuit welding spot generation software, and because the thickness of the packaging part is thin, a riving knife suitable for the requirement of the welding spot is selected for pressure welding, and a gold wire bonding low-radian control technology is adopted. The combination of flat arc, reverse striking and forward striking is adopted to form the high-grade line arc shape of the sharp corner and the high-grade line arc shape of the flat corner. Firstly, bonding wires from a second chip 11 to a first chip 10 to form a second bonding wire X1, wherein the arc height is controlled within 100 mu m; then, wire bonding is carried out from the second chip 11 to the fourth inner lead 21 to form a third bonding wire X3; next, a first bonding wire X2 is formed by bonding wires from the first chip 10 to the first inner lead 18, a fourth bonding wire X4 is formed by bonding wires from the first chip 10 to the base island 6, the arc height is controlled within 150 μm, and the arc height of the first bonding wire X2, the arc height of the third bonding wire X3 and the arc height of the fourth bonding wire X4 are controlled within 150 μm. Because the width of the multi-row matrix copper alloy electroplated eHSOP5L lead frame semi-finished product is larger, the width of a special multi-row windowing clamp used by a copper wire bonding station is also larger; the clamp pressing plate, the heating block and the workbench of the copper wire bonding machine need to be tightly matched, so that the looseness phenomenon cannot occur after installation; therefore, a special clamp pressing plate structure matched with the frame is redesigned, and the frame pins and the clamp are tightly matched, which is shown in fig. 3.

e. Plastic package

Selecting an environment-friendly plastic packaging material with the viscosity of 8500CP, low stress, low water absorption (the water absorption is less than 0.3 percent) and high reliability; using a fully automatic encapsulation mold, and using application layering analysis software V1.4 (2011 SR 17091), multi-section injection molding model software V1.0 (2011 SR 0131152) and one hundred percent cavity proportion measurement software (2011 SR 012173) to vacuum adsorption.

The process adopts the ultra-thin type anti-warping and separation layer reducing and eliminating process, controls different injection molding speeds to reduce the wire punching rate, controls the wire punching rate to be less than 8 percent, reduces the turn-up or turn-up, increases the curing time by 10 to 30 seconds compared with the normal time, and achieves the purpose of reducing warping degree.

During post-curing, the upper pressing plate and the lower base of the clamp are both planes, the upper pressing plate of the IC clamp is larger than the semi-finished product of the multi-row matrix copper alloy electroplated eHSOP5L lead frame after plastic packaging, and the clamp is made of a thick steel plate which is subjected to chrome plating. Aging the multi-row matrix copper alloy electroplated eHSOP5L semi-finished lead frame in an oven at 175 ℃ for 5 hours after plastic encapsulation, gradually softening, and flattening under the gravity of an upper pressing plate of an IC clamp; after the semi-finished product of the multi-row matrix copper alloy electroplated eHSOP5L lead frame after being molded is taken out from the oven at the temperature of below 70 ℃, and is completely cooled under the gravity of the upper pressing plate of the clamp, the warping degree of the plastic package body 12 can meet the requirements of printing, stamping and cutting processes, and secondary warping caused by rapid temperature reduction is prevented;

f. electroplating of

The method comprises the following steps of carrying out tin plating on a multi-row matrix copper alloy electroplated eHSOP5L lead frame semi-finished product by adopting an automatic electroplating line, so that a layer of soldering tin is plated on the surfaces of five independent outer pins, and the thickness of a product plating layer is controlled to be 11.43 +/-3.81 mu m;

g. printing

Marking the surface of the packaging part by adopting a full-automatic printer, and printing a mark on the surface of the electroplated multi-row matrix copper alloy electroplated eHSOP5L lead frame semi-finished product by adopting a clamp type fixing, double laser heads and a continuous feeding and positioning printing mode;

h. cutting ribs and separating by punching

Adopt dedicated full-automatic eager muscle system and eager muscle mould, to the multirow matrix copper alloy electroplate on the semi-manufactured goods of eHSOP5L lead frame two connecting rods B of connecting excise, the clearance between eager muscle cutter and the plastic-sealed body 12 is greater than 0.075mm, guarantees that the plastic-sealed body 12 is not die-cut to, in time clears up the mould surface plastic envelope residue simultaneously, reduces the colloid and is hindered by the pad.

The punching and cutting type production process adopts a punching and separating type tray entering or pipe entering method, in order to avoid that a punching blade damages the plastic package body 12 during punching and separating, on the premise of meeting the product quality requirement, the distance from the punching blade to the plastic package body 12 is controlled to be 0.15mm, the mold enables the plastic package body 12 to be fixed and compacted up and down, suspension is avoided, residual glue fragments in the mold are cleaned in time during production, product deviation caused by residual foreign matters is prevented, and the plastic package body 12 is prevented from generating broken hidden troubles due to extrusion of surplus objects.

i. Testing and packaging

And (3) testing appearance and functional parameters of the punched and separated semi-finished product of the matrix copper alloy electroplated eHSOP5L lead frame by adopting a special testing machine and a sorting machine, ensuring that a product provided by a customer can be used on the machine, meeting the use requirement of the package, and packaging and warehousing according to the customer requirement to obtain the eHSOP5L package of the high-power drive circuit.

The specific process of packaging is as follows: receiving products → taping products according to the packaging quantity → adding foam cotton and protective tape according to the standard requirement → operators checking warehousing notes, labels → checking tracing small labels and pasting reel labels → setting vacuum packaging parameters → packing in packing boxes → pasting labels according to the standard requirement → checking whether relevant accessories are complete → packing and warehousing.

As shown in fig. 3, 4, 5, and 6, the eHSOP5L package of high power driver circuit produced by the above-mentioned production method of the invention has a thickness of 1.60 mm ± 0.05mm, and comprises a first chip 10, a second chip 11, and a lead frame unit 5 according to claim 1, wherein the first chip 10 is adhered to the chip mounting region of the base island 6 by using a high silver conductive adhesive, the second chip 11 is adhered to the surface of the first chip 10 by using a DAF film stack, the bonding pads on the surfaces of the first chip 10 and the second chip 11 are connected to the corresponding inner leads and the base island 6 by wire bonding, the first chip 10, the second chip 11, and the base island 6 are all in the plastic package 12, the two heat dissipation fins 16 are arranged on the plastic package 12, and the lower row is provided with the exposed portions connected to the first inner leads 18, the second inner leads 19, the third inner leads 20, and the third inner leads 20, Five independent tinned outer pins with the distance of 1.70mm, which are connected with the fourth inner pin 21 and the fifth inner pin 22, are respectively a first outer pin 23, a second outer pin 24, a third outer pin 25, a fourth outer pin 26 and a fifth outer pin 27, and the protrusion of the five independent tinned outer pins out of the plastic package body 12 is 0.5 mm-1.0 mm; the first chip 10 is connected to the second chip 11 through a first bonding wire X1, and the second chip 11 is connected to the fourth inner lead 21 through a third bonding wire X3; the first chip 10 is connected with the first inner lead 18 through a second bonding wire X2, and the first chip 10 is connected with the base island 6 through a fourth bonding wire X4; the plastic package body 12 is provided with a first pin mark 17.

The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.