阅读说明：本技术 包括壳体的功率半导体器件及生产功率半导体器件的方法 (Power semiconductor device comprising a housing and method for producing a power semiconductor device ) 是由 托马斯·洪卡 赖纳·波普 斯特凡·魏斯 于 2019-06-14 设计创作，主要内容包括：本发明涉及包括壳体的功率半导体器件及生产功率半导体器件的方法,该功率半导体器件包括穿过壳体开口的销元件；包括弹性密封装置,其布置在壳体的壳体开口壁与销元件之间,该壳体开口壁限定壳体开口并且环绕销元件；并包括套筒,其中销元件延伸穿过套筒并延伸穿过密封元件的密封装置开口,其中密封装置未以材料结合的方式连接到套筒、连接到壳体开口壁和连接到销元件,且密封装置将壳体开口壁与套筒封隔开来并且将套筒与销元件封隔开来；并包括布置在密封装置上的交联灌封化合物,其中交联灌封化合物以材料结合的方式连接到套筒、连接到壳体开口壁和连接到销元件,且灌封化合物将壳体开口壁与套筒封隔开来并且将套筒与销元件封隔开来。(The invention relates to a power semiconductor device comprising a housing and a method of producing a power semiconductor device, the power semiconductor device comprising a pin element passing through a housing opening; comprising an elastic sealing means arranged between a housing opening wall of the housing, which defines the housing opening and surrounds the pin element, and the pin element; and comprising a sleeve, wherein the pin element extends through the sleeve and through a sealing means opening of the sealing element, wherein the sealing means is not connected in a material-bonded manner to the sleeve, to a housing opening wall and to the pin element, and the sealing means seals off the housing opening wall from the sleeve and seals off the sleeve from the pin element; and a cross-linking potting compound disposed on the sealing device, wherein the cross-linking potting compound is materially bonded to the sleeve, to the housing opening wall, and to the pin element, and the potting compound seals the housing opening wall from the sleeve and seals the sleeve from the pin element.)

1. A power semiconductor device comprising a power semiconductor component (11); comprising a housing (2), the housing (2) having a housing opening (12); comprising a pin element (7), the pin element (7) passing through the housing opening (12) and having a thread (13) at least outside the housing (2); comprising an elastic sealing means (6), said elastic sealing means (6) being arranged between a housing opening wall (2a) of said housing (2) and said pin element (7), said housing opening wall (2a) defining said housing opening (12) and surrounding said pin element (7); and comprising an electrically conductive sleeve (5), the electrically conductive sleeve (5) forming an electrical connection element of the power semiconductor device (1), wherein the pin element (7) extends through the sleeve (5) and through a sealing device opening (6g) of the sealing element (6), wherein a first sealing element (6a) of the sealing device (6) is arranged between the sleeve (5) and the housing opening wall (2a) and a second sealing element (6b) of the sealing device (6) is arranged between the sleeve (5) and the pin element (7), wherein the sealing device (6) is not connected in a material-bonded manner to the sleeve (5), to the housing opening wall (2a) and to the pin element (7), and the sealing device (6) seals the housing opening wall (2a) from the sleeve (5) and the sleeve (5) from the pin element The parts (7) are sealed; and comprising a cross-linking potting compound (40), the cross-linking potting compound (40) being arranged on the sealing device (6), wherein the cross-linking potting compound (40) is arranged between the sleeve (5) and the housing opening wall (2a) and between the sleeve (5) and the pin element (7), wherein the cross-linking potting compound (40) is connected in a material-bonded manner to the sleeve (5), to the housing opening wall (2a) and to the pin element (7), and the potting compound (40) seals the housing opening wall (2a) from the sleeve (5) and the sleeve (5) from the pin element (7).

2. Power semiconductor device according to claim 1, characterized in that the cross-linked potting compound (40) is formed by a cross-linked silicone resin, in particular a cross-linked silicone rubber.

3. Power semiconductor device according to any one of the preceding claims, characterised in that the sleeve (5) has a first recess (5a) starting from the side (5c) of the sleeve facing the pin element outer end (7a) of the pin element (7) which is arranged outside the housing (2) and which extends in the axial direction (B) of the pin element (7), wherein the sealing arrangement (6) is of one-piece design and has a first connecting section (6c), which first connecting section (6c) extends through the first recess (5a) and connects the first sealing element (6a) to the second sealing element (6B).

4. A power semiconductor device according to claim 3, characterised in that the sleeve (5) has a second recess (5B) starting from the side (5c) of the sleeve facing a pin element outer end (7a) of the pin element (7), which pin element outer end is arranged outside the housing (2) and which second recess extends in the axial direction (B) of the pin element (7), wherein the sealing device (6) has a second connecting section (6d), which second connecting section (6d) extends through the second recess (5B) and connects the first sealing element (6a) to the second sealing element (6B).

5. A power semiconductor device according to claim 4, characterized in that the second recess (5b) is arranged opposite the first recess (5a) and the second connection section (6d) is arranged opposite the first connection section (6 c).

6. Power semiconductor device according to one of claims 1-2, characterized in that the first and second sealing elements (6a, 6b) and the sleeve (5) each have a hollow cylindrical design and the pin element (7) has a circular cross-sectional area.

7. Power semiconductor device according to one of claims 1-2, characterized in that the sealing means (6) is formed of an elastomer.

8. Power semiconductor device according to one of claims 1 to 2, characterized in that the power semiconductor device (1) has a holding body (17), wherein the pin element (7) is connected to the holding body (17) in a rotationally fixed manner, in particular is injection molded into the holding body (17).

9. Power semiconductor device according to one of claims 1 to 2, characterized in that the power semiconductor device (1) has an electrically conductive connection element (3), which electrically conductive connection element (3) is arranged within the housing (2) and is electrically conductively connected with the power semiconductor component (11), wherein the electrically conductive sleeve (5) is arranged above the connection element (3).

10. Power semiconductor device according to claim 9, characterized in that the sleeve (5) is arranged on the connection element (3).

11. Power semiconductor arrangement comprising a power semiconductor device (1) designed according to one of claims 1 to 10, and the power semiconductor device (1) comprises an electrically conductive load current connection element (4), the electrically conductive load current connection element (4) having a third recess and being arranged outside the housing (2) such that the pin element (7) extends through the third recess, wherein a force generating element (9) of the power semiconductor arrangement (30) is twisted onto the thread (13) of the pin element (7) and has a thread, which force generating element generates a force (F) on the load current connection element (4) acting in the direction of the sleeve (5), whereby the load current connection element (4) is arranged to press against the sleeve (5) and an electrically conductive pressure contact is formed between the sleeve (5) and the load current connection element (4) .

12. A method for producing a power semiconductor device, the method comprising the method steps of:

a) providing a power semiconductor device precursor product (1 '), said power semiconductor device precursor product (1') comprising a power semiconductor component (11); comprises a housing (2) having a housing opening (12); comprises a pin element (7), the pin element (7) being arranged within the housing (2) and passing through the housing opening (12), and the pin element (7) having a thread (13) at least outside the housing (2); comprising an elastic sealing means (6), said elastic sealing means (6) being arranged between a housing opening wall (2a) of said housing (2) and said pin element (7), said housing opening wall defining said housing opening (12) and surrounding said pin element (7); and comprising an electrically conductive sleeve (5), the electrically conductive sleeve (5) forming an electrical connection element of the power semiconductor device (1), wherein the pin element (7) extends through the sleeve (5) and through a sealing device opening (6g) of the sealing element (6), wherein a first sealing element (6a) of the sealing device (6) is arranged between the sleeve (5) and the housing opening wall (2a) and a second sealing element (6b) of the sealing device (6) is arranged between the sleeve (5) and the pin element (7), wherein the sealing device (6) is not connected in a material-bonded manner to the sleeve (5), to the housing opening wall (2a) and to the pin element (7), and the sealing device (6) seals the housing opening wall (2a) from the sleeve (5) and from the sleeve and from the pin element (7) ) The sealing is carried out in a sealed-off way,

b) -arranging a liquid or gel-like, non-crosslinked potting compound (40 ') on the sealing means (6), wherein the non-crosslinked potting compound (40 ') is arranged between the sleeve (5) and the housing opening wall (2a) and between the sleeve (5) and the pin element (7), wherein the non-crosslinked potting compound (40 ') is in mechanical contact with the sleeve (5), with the housing opening wall (2a) and with the pin element (7),

c) -cross-linking the non-cross-linked potting compound (40'), thereby forming a cross-linked potting compound (40), the cross-linked potting compound (40) sealing the housing opening wall (2a) from the sleeve (5) and sealing the sleeve (5) from the pin element (7).

13. Method according to claim 12, characterized in that the uncrosslinked potting compound (40') is formed from uncrosslinked silicone resin, in particular from uncrosslinked silicone rubber.

14. Method according to claim 12 or 13, characterized in that in method step c) the cross-linking of the non-cross-linked potting compound (40') is accelerated by heating the pin element (7) and/or the sleeve (5) by means of an external heat generating device (41).

Technical Field

The invention relates to a power semiconductor device comprising a housing and to a method for producing a power semiconductor device.

Background

DE 102012219791 a1 discloses a power semiconductor component, which comprises a power semiconductor component, a housing, and an electrical connection element. The electrical connection elements of the power semiconductor component serve for electrically connecting the electrically conductive load current connection elements. Here, the electrical connection elements of the power semiconductor device extend from the interior of the housing through the housing wall to the exterior of the housing. In order to prevent dust particles and moisture from entering the interior of the housing, the electrical connection elements of the power semiconductor device are sealed off from the housing wall.

Disclosure of Invention

It is an object of the present invention to provide a power semiconductor device comprising a housing in which dust particles and moisture are prevented from entering the interior of the housing for a long period of time in a reliable manner.

This object is achieved by a power semiconductor device comprising a power semiconductor component: comprises a housing having a housing opening; comprising a pin element which passes through the housing opening and which has a thread at least outside the housing; comprising an elastic sealing means arranged between a housing opening wall of the housing, which defines the housing opening and surrounds the pin element, and the pin element; and comprising an electrically conductive sleeve forming an electrical connection element for the power semiconductor device, wherein the pin element extends through the sleeve and through a sealing device opening of the sealing element, wherein a first sealing element of the sealing device is arranged between the sleeve and a wall of the housing opening and a second sealing element of the sealing device is arranged between the sleeve and the pin element, wherein the sealing device is not connected in a material-bonded manner to the sleeve, to the wall of the housing opening and to the pin element, and the sealing device seals the wall of the housing opening from the sleeve and seals the sleeve from the pin element; and comprises a cross-linking potting compound arranged on the sealing device, wherein the cross-linking potting compound is arranged between the sleeve and the housing opening wall and between the sleeve and the pin element, wherein the cross-linking potting compound is connected in a material-bonded manner to the sleeve, to the housing opening wall and to the pin element, and the potting compound seals off the sleeve opening wall from the sleeve and seals off the sleeve from the pin element.

Furthermore, the object is achieved by a method for producing a power semiconductor device, comprising the following method steps:

a) providing a power semiconductor device precursor product comprising a power semiconductor component; comprises a housing having a housing opening; comprising a pin element arranged within the housing and opening through the housing and having a thread at least outside the housing; comprising an elastic sealing means arranged between a housing opening wall of the housing, which defines the housing opening and surrounds the pin element, and the pin element; and comprising an electrically conductive sleeve forming an electrical connection element for the power semiconductor device, wherein the pin element extends through the sleeve and through a sealing device opening of the sealing element, wherein a first sealing element of the sealing device is arranged between the sleeve and a wall of the housing opening and a second sealing element of the sealing device is arranged between the sleeve and the pin element, wherein the sealing device is not connected in a material-bonded manner to the sleeve, to the wall of the housing opening and to the pin element, and the sealing device seals the wall of the housing opening from the sleeve and seals the sleeve from the pin element,

b) arranging a liquid or gel-like non-crosslinked potting compound on the sealing means, wherein the non-crosslinked potting compound is arranged between the sleeve and the wall of the housing opening and between the sleeve and the pin element, wherein the non-crosslinked potting compound is in mechanical contact with the sleeve, with the wall of the housing opening and with the pin element,

c) the uncrosslinked potting compound is crosslinked, thereby forming a crosslinked potting compound that seals the housing opening wall from the sleeve and seals the sleeve from the pin element.

Advantageous improvements of the method are apparent in a manner similar to advantageous improvements of the power semiconductor device, and vice versa.

It has proven advantageous if the cross-linked potting compound is formed from a cross-linked silicone resin, in particular from a cross-linked silicone rubber, since in this case a very reliable encapsulation is achieved.

Furthermore, it has proven to be advantageous if the sleeve has a first recess starting from the side of the sleeve facing the pin element outer end of the pin element, which pin element outer end is arranged outside the housing, and the first recess extends in the axial direction of the pin element, wherein the sealing device has a one-piece design and has a first connecting section which extends through the first recess and connects the first sealing element to the second sealing element, since the first sealing element is in this case very reliably connected to the second sealing element.

In this case, it has proven to be advantageous if the sleeve has a second recess starting from the side of the sleeve facing the pin element outer end of the pin element, which pin element outer end is arranged outside the housing and which second recess extends in the axial direction of the pin element, wherein the sealing device has a second connecting section which extends through the second recess and connects the first sealing element to the second sealing element, because the first sealing element is very reliably connected to the second sealing element in this way.

In this case, it has proven to be advantageous if the second recess is arranged opposite the first recess and the second connecting section is arranged opposite the first connecting section, since in this case the first sealing element is particularly reliably connected to the second sealing element.

It has further proved advantageous when the first and second sealing elements and the sleeve each have a hollow cylindrical design and the pin element has a circular cross-sectional area, since the circular profiles can be sealed off in a particularly reliable manner.

It has further proved advantageous when the sealing means are formed of an elastomer, since in this case a very reliable pack-off is achieved.

Furthermore, it has proven to be advantageous if the power semiconductor component has a holding body, wherein the pin element is connected to the holding body in a rotationally fixed manner, in particular is injection-molded into the holding body. As a result, the pin element is mechanically connected to the rest of the power semiconductor device in a very reliable manner.

Furthermore, it has proven to be advantageous if the power semiconductor component has an electrically conductive connection element which is arranged in the housing and is electrically conductively connected to the power semiconductor component, wherein the electrically conductive sleeve is arranged above the connection element, since in this case the sleeve can be electrically conductively connected to the connection element in a simple manner.

In this case, it has proven to be advantageous for the sleeve to be arranged on the connecting element. As a result, when the force generating element generates a force on the load current connection element acting in the direction of the sleeve, a movement of the sleeve in the direction of the connection element is reliably prevented.

Furthermore, it has proven to be advantageous if the power semiconductor arrangement comprises a power semiconductor device according to the invention and comprises an electrically conductive load current connection element which has a third recess and is arranged outside the housing such that the pin element extends through the third recess, wherein a force generating element of the power semiconductor arrangement is twisted onto the thread of the pin element and has a thread, which force generating element generates a force on the load current connection element which force acts in the direction of the sleeve, whereby the load current connection element is arranged to be pressed against the sleeve and an electrically conductive pressure contact is formed between the sleeve and the load current connection element.

It should be noted that there may optionally be more than one element described in the singular herein.

Drawings

Exemplary embodiments of the invention will be explained below with reference to the following drawings, in which:

figure 1 shows a perspective view of a power semiconductor arrangement comprising a power semiconductor device according to the invention,

figure 2 shows a perspective cross-sectional view of a power semiconductor device according to the invention,

figure 3 shows a view of a detail of figure 2,

fig. 4 shows an exploded illustration of a perspective view of a sleeve and a sealing arrangement of a power semiconductor device according to the invention, an

Fig. 5 shows a cross-sectional view of a power semiconductor device precursor product and an external heat generating device.

In the drawings, like elements have like reference numerals. It should be noted that for the sake of clarity, any braze or sinter metal layers that may be present are not shown in the figures.

Detailed Description

Fig. 1 shows a perspective view of a power semiconductor arrangement 30 comprising a power semiconductor device 1 according to the invention. Fig. 2 shows a perspective cross-sectional view of a power semiconductor device 1 according to the invention, and fig. 3 shows an enlarged view of detail a of fig. 2. Fig. 4 shows an exploded illustration of a perspective view of the sleeve 5 and the sealing arrangement 6 of the power semiconductor device 1 according to the invention. During the production of the power semiconductor device 1, within the scope of the exemplary embodiment, the sealing device 6 is pushed onto the sleeve 5 such that the first connection section 6c of the sealing device 6 is arranged in the first recess 5a of the sleeve 5 and the second connection section 6d of the sealing device 6 is arranged in the second recess 5b of the sleeve 5, and the upper portion of the sleeve 5 extends through the sealing device recesses 6h and 6i of the sealing device 6. The sections shown in fig. 2 and 3 extend through the connecting sections 6c and 6d and through the recesses 5a and 5 b.

The power semiconductor arrangement 30 has a power semiconductor component 1 according to the invention and load current connection elements 4, each load current connection element 4 being connected in an electrically conductive manner to a corresponding electrical connection element of the power semiconductor component 1, that is to say to a corresponding sleeve 5, by means of a force generation element 9 which has a thread and is preferably designed as a nut. For example, the load current connection element 4 may be conductively connected to the electric motor for supplying the electric motor with electricity. The load current connection element 4 can be designed, for example, as a busbar or a cable mount. The power semiconductor component 1 generally has power semiconductor components 11, which power semiconductor components 11 are electrically connected to form a converter and can, for example, generate the current required for supplying the electric motor.

The power semiconductor component 1 has at least one power semiconductor component 11, but usually a plurality of power semiconductor components 11, these power semiconductor components 11 being connected electrically conductively with the electrically conductive connecting element 3, the electrically conductive connecting element 3 having a one-piece or multi-piece design. The power semiconductor component 11 is preferably arranged on at least one electrically conductive conductor track of the substrate 10 of the power semiconductor device 1. Here, the power semiconductor component 11 is preferably conductively connected to the at least one conductor track by means of a soldered or sintered metal layer arranged between the power semiconductor component 11 and the conductor track. The conductor tracks are formed by a conductive patterned first conductive layer of the substrate 10. The respective power semiconductor component 11 is preferably in the form of a power semiconductor switch or diode. Here, the power semiconductor switches are preferably in the form of transistors, such as, for example, IGBTs (insulated gate bipolar transistors) or MOSFETs (metal oxide semiconductor field effect transistors).

Furthermore, the power semiconductor module 1 preferably has a base plate 14, on which base plate 14 the substrate 10 is arranged, in the context of the exemplary embodiment the substrate 10 being designed as a direct copper bonded substrate (DCB substrate).

The connection element 3 is electrically conductively connected to the power semiconductor component 11. Within the scope of the exemplary embodiment, for this purpose, the connecting element 3 is conductively contacted by the base plate 10, for example by means of a material bond connection (such as, for example, a soldering, sintering or welding connection). The connecting element 3 is preferably at least substantially composed of copper or a copper alloy.

The power semiconductor component 1 has a housing 2, the housing 2 preferably being made of plastic. The housing 2 is preferably arranged on the base plate 4 and is preferably connected to said base plate, for example by means of screws 19. The case 2 covers the power semiconductor component 11. The housing 2 has a housing opening 12, through which housing opening 12 the pin element 7 of the power semiconductor component 1 extends, which pin element has a thread 13 at least outside the housing 2.

The power semiconductor component 1 also has an elastic sealing device 6, which elastic sealing device 6 is arranged between a housing opening wall 2a of the housing 2, which defines the housing opening 12 and surrounds the pin element 7, and the pin element 7. The sealing means 6 is preferably formed of an elastomer. The elastomer is preferably formed from a cross-linked silicone resin, in particular a cross-linked silicone rubber. As in the exemplary embodiment, the sealing device 6 is preferably of one-piece design, but may also be of multi-piece design.

The power semiconductor component 1 further has an electrically conductive sleeve 5 which is arranged above the connection element 3, wherein the pin element 7 extends through the sleeve 5 and through the sealing element opening 6g of the sealing element 6. The sleeve 5 forms an electrical connection element of the power semiconductor device 1, that is to say the sleeve 5 serves to electrically connect an external current-carrying element (such as, for example, the load current connection element 4) to the power semiconductor device 1. The electrical load current flows through the material of the sleeve 5 during operation of the power semiconductor device 1. The sleeve 5, more precisely the side 5d of the sleeve 5 facing the connecting element 3, is preferably arranged on the connecting element 3 and in electrically conductive contact with the connecting element 3, as shown in fig. 2 and 3. In the exemplary embodiment, the sleeve 5 is arranged on the connecting element 3 by resting on the connecting element 3. The sleeve 5 can be connected to the connecting element 3 in a material-bonded manner (for example, by means of a soldered, sintered or welded connection). In the exemplary embodiment, the sleeve 5 is not connected to the connecting element 3 in a material-bonded manner. However, the sleeve 5 can also be arranged on the connecting element 3 and be in electrically conductive contact with the connecting element 3 by means of a soldered or sintered layer arranged between the sleeve 5 and the connecting element 3. When the sleeve 5 is not arranged on the connecting element 3, in this case a narrow air gap may exist between the sleeve 5 and the connecting element 3. The connecting element 3 preferably has a connecting element recess 18, through which connecting element recess 18 the pin element 7 extends. The pin element 7 preferably extends in the normal direction N of the base plate 10. The sleeve 5 is preferably designed as a hollow cylinder. It should be noted that the sleeve 5 may be electrically conductively connected to the power semiconductor component 11 in general by any desired electrically conductive connection means (e.g. cable, copper strip).

A first sealing element 6a of the sealing device 6 is arranged between the sleeve 5 and the housing opening wall 2a, and a second sealing element 6b of the sealing device 6 is arranged between the sleeve 5 and the pin element 7. The respective sealing element 6a or 6b has an annular design. The sealing means 6 are connected to the sleeve 5, to the housing opening wall 2a and to the pin element 7 without material bonding. During the production of the power semiconductor component 1, the sealing device 6 is present as an already prefabricated component. The sealing means 6 seals off the housing opening wall 2a from the sleeve 5 by means of a first sealing element 6a and seals off the sleeve 5 from the pin element 7 by means of a second sealing element 6 b.

As shown in the example in fig. 4, the sleeve 5 preferably has a first recess 5a starting from the side 5c of the sleeve facing the pin element outer end 7a of the pin element 7, which pin element outer end is arranged outside the housing 2, and which first recess 5a extends in the axial direction B of the pin element 7. In the exemplary embodiment, the sleeve 5 has a first recess 5a starting from the side 5c of the sleeve facing away from the connecting element 3, and the first recess 5a extends in the direction of the connecting element 3. Here, the sealing device 6 is of one-piece design and has a first connecting section 6c, which first connecting section 6c extends through the first recess 5a and connects the first sealing element 6a to the second sealing element 6 b. The first connecting section 6c interacts with the first recess 5a, ensuring that the second sealing element portion 6b remains in its position in a reliable manner over a long period of time. It should be noted that the sealing means 6 may also have a multi-piece design, whereby the first sealing element 6a and the second sealing element 6b may also be designed as separate sealing rings, for example.

The sleeve 5 preferably has a second recess 5B starting from the side 5c of the sleeve facing the pin element outer end 7a of the pin element 7, which pin element outer end is arranged outside the housing 2, and which second recess 5B extends in the axial direction B of the pin element 7. In the exemplary embodiment, the sleeve 5 has a second recess 5b, which second recess 5b starts from a side 5c of the sleeve facing away from the connecting element 3 and extends in the direction of the connecting element 3, wherein the sealing device 6 has a second connecting section 6d, which second connecting section 6d extends through the second recess 5b and connects the first sealing element 6a to the second sealing element 6 b. Here, the second recess 5b is preferably arranged opposite the first recess 5a, wherein the second connecting section 6d is arranged opposite the first connecting section 6 c.

The sleeve 5 is preferably at least substantially composed of copper or a copper alloy. The sleeve 5 may have a silver coating. Within the scope of the exemplary embodiment, the first and second sealing elements 6a, 6b and the sleeve 5 each have a hollow-cylindrical design, wherein the pin element 7 has a circular cross-sectional area.

The power semiconductor component 1 also has a cross-linking potting compound 40, which cross-linking potting compound 40 is arranged on that side 6e of the sealing arrangement 6 which faces away from the connecting element 3. A cross-linking potting compound 40 is arranged between the sleeve 5 and the housing opening wall 2a and between the sleeve 5 and the pin element 7, wherein the cross-linking potting compound 40 is connected in a material-bonded manner to the sleeve 5, to the housing opening wall 2a and to the pin element 7. The potting compound 40 seals the housing opening wall 2a from the sleeve 5 and seals the sleeve 5 from the pin element 7. The cross-linked potting compound 40 is preferably formed from a cross-linked silicone resin, in particular a cross-linked silicone rubber. During the production of the power semiconductor component 1, a liquid or gel-like, uncrosslinked potting compound 40 '(see fig. 5) is arranged on that side 6e of the sealing device 6 which faces away from the connecting element 3 and then crosslinked, whereby the crosslinked potting compound 40 is made of the uncrosslinked potting compound 40', which is connected in a material-bonded manner to the sleeve 5, to the housing opening wall 2a and to the pin element 7. When providing said liquid or gel-like uncrosslinked potting compound, the sealing means 6 prevents the liquid or gel-like uncrosslinked potting compound 40' from flowing into the region of the power semiconductor component 1 arranged below the sealing means 6 within the housing 2.

In the present invention, the cross-linked potting compound 40 serves as the primary seal and the sealing device 6 serves as the secondary seal. The two-stage sealing of the housing opening achieved in the invention in this way prevents dust particles and moisture from entering the interior of the housing in a reliable manner and for a long time. The power semiconductor device 1 is also more easily and efficiently producible, since the sealing means 6 additionally prevents the liquid or gel-like, uncrosslinked potting compound 40' from flowing into the region of the power semiconductor device 1 arranged inside the housing 2 below the sealing means 6 when said liquid or gel-like, uncrosslinked potting compound is provided.

The power semiconductor component 1 preferably has a holding body 17, wherein the pin element 7 is connected to the holding body 17 in a rotationally fixed manner, in particular is injection molded into the holding body 17. The holding body 17 is preferably arranged on the base plate 14, preferably connected to the base plate 14, for example by means of a screw connection.

The power semiconductor component 1 can be installed, for example, in a vehicle, such as, for example, a forklift truck, or, for example, in a switch cabinet. A vehicle, a switch cabinet or in general an external electrical component intended to be conductively connected to the power semiconductor component 1 according to the invention has a conductive load current connection element 4, which load current connection element 4 is provided so as to be conductively connected to the power semiconductor component 1 according to the invention. When the load current connection element 4 is electrically connected to the power semiconductor device 1, more precisely to the sleeve 5, a power semiconductor arrangement 30 is produced. The respective load current connection element 4 is preferably at least substantially composed of copper or a copper alloy.

In order to produce the power semiconductor arrangement 30, the electrically conductive load current connection element 4 with the third recess is arranged outside the housing 2 of the power semiconductor component 1, such that the pin element 7 extends through the third recess. The force generating element 9 with the thread is then arranged and twisted on the thread 13 of the pin element 7, so that the force generating element 9 generates a force F on the load current connection element 4 acting in the direction of the sleeve 5, more precisely in the direction of the side 5c of the sleeve 5 facing the load current connection element 4, as a result of which the load current connection element 4 is pressed against the sleeve 5, more precisely against the side 5c of the sleeve 5 facing the load current connection element 4, and an electrically conductive pressure contact is formed between the sleeve 5 and the load current connection element 4. The sleeve 5 is in electrically conductive contact with the connecting element 3. The electrically conductive contact between the sleeve 5 and the connecting element 3 can be realized in the form of an electrically conductive material bonding contact (for example a soldered, welded or sintered connection) or, as in the exemplary embodiment, as a pressure contact. The sleeve 5, more precisely the side 5d of the sleeve 5 facing the connecting element 3, is pressed against the connecting element 3 in the process.

If a narrow air gap exists between the sleeve 5 and the connecting element 3, this air gap is closed by the sleeve 5 being moved by the force F towards the connecting element 3 until it is in mechanical contact with the connecting element 3 and thus also in electrically conductive contact with the connecting element 3. Here, a cross-linking potting compound 40 having a certain elasticity is used. The connecting element 3 forms an abutment seat for the sleeve 5. The retaining body 17 forms an abutment for the connecting element 3. The load current connection element 4 is connected in an electrically conductive manner to the connection element 3 by means of the sleeve 7. The force generating element 9 is preferably designed as a nut.

Thus, the power semiconductor arrangement 30 has: a power semiconductor device 1 according to the present invention; an electrically conductive load current connection element 4 having a third recess; and a force generating element 9 with a thread. The load current connection element 4 is arranged outside the housing 2 of the power semiconductor device 1 such that the pin element 7 of the power semiconductor device 1 extends through the third recess, wherein the force generating element 9 is twisted onto the thread 13 of the pin element 7 and a force F acting in the direction of the sleeve 5 of the power semiconductor device 1 is generated on the load current connection element 4, whereby the load current connection element 4 is arranged to press against the sleeve 5 and an electrically conductive pressure contact is formed between the sleeve 5 and the load current connection element 4, and whereby, in the exemplary embodiment, the sleeve 5 is arranged to press against the connection element 3 and an electrically conductive pressure contact is formed between the sleeve 5 and the connection element 3.

The method of producing a power semiconductor device 1 according to the invention with successive method steps will be described in detail below. Similar to the advantageous improvements and variant developments of the above-described power semiconductor device 1 according to the invention, the advantageous improvements of the method are obvious and, therefore, in order to avoid repetitions, are not described again in the following. The power semiconductor component 1 produced at the end of the method according to fig. 5 corresponds to the power semiconductor component 1 according to the invention in conjunction with fig. 1 to 4 (including advantageous developments and variant developments).

As shown by way of example in fig. 5, a power semiconductor device precursor product 1' is provided in a first method step a). The power semiconductor device precursor product 1' has: a power semiconductor component 11; a housing 2 having a housing opening 12; a preferably electrically conductive connecting element 3 which is arranged in the housing 2 and is electrically conductively connected to the power semiconductor component 11; and a pin element 7 which passes through the housing opening 12 and has a thread 13 at least outside the housing 2. It should be noted that the thread 13 of the pin element 7 is not shown in fig. 5 for the sake of clarity. The power semiconductor device precursor product 1' further has: an elastic sealing means 6 arranged between a housing opening wall 2a of the housing 2, which defines the housing opening and surrounds the pin element 7, and the pin element 7; and an electrically conductive sleeve 5, which is arranged here above the connecting element 3. The pin element 7 extends through the sleeve 5 and through a sealing device opening 6g of the sealing element 6, wherein a first sealing element 6a of the sealing device 6 is arranged between the sleeve 5 and the housing opening wall 2a and a second sealing element 6b of the sealing device 6 is arranged between the sleeve 5 and the pin element 7, wherein the sealing device 6 is not connected in a material-bonded manner to the sleeve 5, to the housing opening wall 2a and to the pin element 7, and the sealing device 6 seals the housing opening wall 2a from the sleeve 5 and the sleeve from the pin element 7. The power semiconductor device precursor product 1' corresponds to the power semiconductor device 1 according to the invention in connection with fig. 1 to 4 (including advantageous developments and variant developments), except for the presence of the cross-linking potting compound 40. The cross-linked potting compound 40 is absent from the power semiconductor device precursor product 1'. It should be noted that the sleeve 5 may in general be conductively connected to the power semiconductor component 11 by any desired electrically conductive connection means (e.g. cables, copper strips).

In a subsequent further method step b), a liquid or gel-like, uncrosslinked potting compound 40' is arranged on the sealing device 6, here on that side 6e of the sealing device 6 which faces away from the connecting element 3, wherein the uncrosslinked potting compound 40' is arranged between the sleeve 5 and the housing opening wall 2a and between the sleeve 5 and the pin element 7, wherein the uncrosslinked potting compound 40' is in mechanical contact with the sleeve 5, with the housing opening wall 2a and with the pin element 7. The region of the housing opening wall 2a arranged above the sealing means 6 is preferably a filling basin for the uncrosslinked potting compound 40' formed in the process.

In a subsequent further method step c), the uncrosslinked potting compound 40' is crosslinked, whereby a crosslinked potting compound 40 is formed, the potting compound 40 sealing off the housing opening wall 2a from the sleeve 5 and the sleeve 5 from the pin element 7. Here, the crosslinking of the uncrosslinked potting compound 40' is preferably accelerated by heating the pin element 7 and/or the sleeve 5 by means of an external heat-generating device 41. In this process, the uncrosslinked potting compound 40' is heated by the pin element 7 and/or the sleeve 5, which accelerates the crosslinking of the potting compound. Here, the uncrosslinked potting compound 40' may consist, for example, of two components which are mixed together immediately before process step b) and may undergo a crosslinking reaction. It should be noted here that, since in this case the majority of the crosslinking takes place only after process step b), uncrosslinked potting compound 40' is still present in process step b) for the purposes of the present invention. The crosslinking of the uncrosslinked potting compound 40 'may also be initiated, for example, by irradiating the uncrosslinked potting compound 40' with UV light.

It should be noted at this point that the features of the different exemplary embodiments of the invention can of course be combined with each other if desired without leaving the scope of the invention, as long as they are not mutually exclusive.