阅读说明：本技术 半导体器件 (Semiconductor device with a plurality of transistors ) 是由 小山田成圣 于 2015-09-28 设计创作，主要内容包括：本发明涉及半导体器件。这样一种半导体器件的电源布线结构,其包括以倒装芯片方式安装在衬底上的半导体芯片,其降低了内部布线的特性阻抗且由此提高了噪声降低效果,同时实现了在高频电源操作期间的低阻抗。在从平面图观察时的半导体芯片的安装面上的多个周边电极焊盘的内侧区域中,在半导体芯片的保护膜上的第一绝缘膜上,半导体器件具有用于将电力提供至半导体芯片的内侧电源板结构。内侧电源板结构包括在第一绝缘膜上的第一电源板、在第一电源板上的第二绝缘膜、以及第二绝缘膜上的第二电源板。(The present invention relates to a semiconductor device. A power supply wiring structure of a semiconductor device including a semiconductor chip flip-chip mounted on a substrate reduces the characteristic impedance of internal wiring and thereby improves the noise reduction effect while achieving low impedance during high-frequency power supply operation. The semiconductor device has an inside power supply board structure for supplying power to the semiconductor chip on a first insulating film on a protective film of the semiconductor chip in an inside region of the plurality of peripheral electrode pads on the mounting surface of the semiconductor chip as viewed in a plan view. The inner power supply plate structure includes a first power supply plate on the first insulating film, a second insulating film on the first power supply plate, and a second power supply plate on the second insulating film.)

1. A semiconductor device, comprising:

a substrate provided with a first power supply land and a second power supply land;

a semiconductor chip flip-chip mounted on the substrate;

a first insulating film disposed on a mounting surface of the semiconductor chip facing the substrate;

an inner power board structure integrally disposed with the semiconductor chip between the semiconductor chip and the substrate via the first insulating film,

the semiconductor chip includes:

a plurality of peripheral electrode pads including a first peripheral power supply pad and a second peripheral power supply pad located in a peripheral portion of the mounting surface, and a first inner power supply pad and a second inner power supply pad located in an inner region of the peripheral electrode pads; and

a protective film formed on the mounting surface of the semiconductor chip at a position other than the peripheral electrode pad, the first inner power supply pad, and the second inner power supply pad;

the first insulating film is formed on the protective film of the semiconductor chip inside the plurality of peripheral electrode pads in a plan view and has openings at positions corresponding to the first inner power supply pad and the second inner power supply pad,

the inner power board structure is formed on the first insulating film, supplies power to the semiconductor chip,

the inboard power strip structure includes:

a first power supply plate formed on the first insulating film;

a second insulating film formed on the first power supply plate;

a second power supply plate formed on the second insulating film; and

a substrate-side insulating film formed on the second power supply plate,

the first power supply board has, in a peripheral portion thereof, a first peripheral power supply terminal connected to the first peripheral electrode pad of the semiconductor chip via a bump and connected to the first inner power supply pad of the semiconductor chip via a bump penetrating the opening of the first insulating film,

the first power supply plate and the second insulating film each have an opening at a position corresponding to the second inner power supply pad of the semiconductor chip;

the second power supply plate has, in a peripheral portion thereof, a second peripheral power supply terminal connected to the second peripheral electrode pad of the semiconductor chip via a bump, and connected to the second inner power supply pad of the semiconductor chip via a bump penetrating the opening formed in the first insulating film and the openings formed in the first power supply plate and the second insulating film,

the substrate-side insulating film, the second power supply plate, and the second insulating film have openings at positions corresponding to the first power supply lands of the substrate, respectively, the first power supply plate is connected to the first power supply lands of the substrate via bumps penetrating the openings, the substrate-side insulating film has openings at positions corresponding to the second power supply lands of the substrate, and the second power supply plate is connected to the second power supply lands of the substrate via bumps penetrating the openings.

2. The semiconductor device of claim 1, wherein:

the plurality of peripheral electrode pads are arranged in two rows at an inner periphery and an outer periphery;

the first peripheral power supply pad and the second peripheral power supply pad are peripheral electrode pads arranged on an inner periphery; and

the peripheral electrode pads arranged at the outer periphery include a third peripheral power supply pad and a fourth peripheral power supply pad,

the semiconductor device further includes: an outer power board structure in an outer peripheral portion of the semiconductor chip and arranged close to the semiconductor chip as viewed in a plan view,

the outside power strip structure includes:

a third power supply board including a third peripheral terminal connected to the third peripheral power supply pad;

a third insulating film formed on the third power supply plate; and

a fourth power supply plate formed on the third insulating film and including a fourth peripheral terminal connected to the fourth peripheral power supply pad.

3. The semiconductor device of claim 2, comprising a connection connecting the inner power plane structure and the outer power plane structure,

wherein the connecting portion includes:

a first connection part electrically connecting the third power supply board and the first power supply board;

a second connection part electrically connecting the fourth power supply board and the second power supply board; and

and a third connection portion connecting the second insulating film and the third insulating film.

4. The semiconductor device of claim 3,

the third power supply board includes a first power supply land connected to the substrate; and

the fourth power supply board includes a second power supply land connected to the substrate.

5. The semiconductor device of claim 4,

the semiconductor chip has a rectangular shape in plan view;

the outer power strip structure is arranged to surround an outer peripheral portion of the rectangular semiconductor chip; and

the first power supply land and the second power supply land are arranged at positions on an extension line of a diagonal line of the rectangular shape.

6. The semiconductor device according to any one of claims 2 to 5,

the first power supply plate and the third power supply plate, the second power supply plate and the fourth power supply plate, and the second insulating film and the third insulating film are respectively arranged on the same plane.

Technical Field

The present invention relates to a semiconductor device, and more particularly, to a power supply wiring structure for supplying power to a semiconductor chip (semiconductor integrated circuit) in a semiconductor device in which the semiconductor chip is flip-chip mounted on a substrate.

Background

Conventionally, as ｃA power supply wiring structure for supplying power to ｃA semiconductor integrated circuit (hereinafter referred to as "LSI"), for example, ｃA technique disclosed in JP- ｃA-2006-173418 is known. According to this technique, a power supply wiring structure (hereinafter referred to as a "mesh power supply wiring structure") includes: a first wiring layer in which a plurality of power supply voltage supply lines (hereinafter referred to as "power supply voltage lines") and a plurality of reference voltage supply lines (hereinafter referred to as "ground lines") are alternately arranged; a second wiring layer in which a plurality of power supply voltage lines and a plurality of ground lines are alternately arranged in a direction perpendicular to a wiring direction of the first wiring layer; and an insulating layer disposed between the first wiring layer and the second wiring layer. In the mesh wiring structure, a parasitic capacitance is formed at an overlapping portion (intersection) of the power supply voltage line of the first wiring layer and the ground line of the second wiring layer, or an overlapping portion of the ground line of the first wiring layer and the power supply voltage line of the second wiring layer, via the insulating layer. The parasitic capacitance can be used as a capacitance to reduce power supply noise.

However, since an increase in LSI clock frequency has been achieved in recent years, the parasitic capacitance of a general mesh power supply wiring structure is not necessarily expected to provide a power supply noise reduction effect with respect to a desired frequency bandwidth. Further, in the case where the latest LSI design rule requires more minute features, when the LSI power supply wiring has a mesh structure, the transmission path of the signal line system in the LSI has high characteristic impedance. Therefore, in the case of a relatively long wiring, a mismatch may occur between the output impedance of the transistor in the LSI and the characteristic impedance of the transmission path, thereby causing noise. Also, a relatively long transmission path having such a high characteristic impedance may serve as an antenna that picks up noise. Meanwhile, as for the power supply impedance (impedance on the power supply side as viewed from LSI) at a high frequency of the LIS power supply, the wiring resistance (series resistance) of the power supply becomes too high to be ignored because of the mesh structure. This results in that the intended operation of the LSI at high frequencies cannot be obtained due to parasitic inductance and parasitic wiring resistance in the power supply wiring network.

Disclosure of Invention

Accordingly, the present specification provides a power supply wiring structure in a semiconductor device having a semiconductor chip flip-chip mounted on a substrate, whereby the characteristic impedance of the internal wiring of an LSI can be reduced and the noise reduction effect can be improved, while achieving a lower impedance during high-frequency operation of the LSI power supply.

The present specification discloses a semiconductor device including a substrate and a semiconductor chip flip-chip mounted on the substrate. The semiconductor chip includes a plurality of peripheral electrode pads formed on a peripheral portion of a mounting face facing the substrate and connected to the substrate, and a protective film formed on the mounting face except for portions where the plurality of peripheral electrode pads are formed. The semiconductor device further includes: the power supply board includes a first insulating film formed on a protective film of the semiconductor chip, and an inner power supply board structure formed on the first insulating film in an inner region of the plurality of peripheral electrode pads in a plan view of the mounting surface and configured to supply power to the semiconductor chip. The inboard power strip structure includes: a first power supply plate formed on the first insulating film, a second insulating film formed on the first power supply plate, and a second power supply plate formed on the second insulating film.

According to this structure, for example, by forming a power supply path for supplying power to a semiconductor chip (LSI) as a power supply board to be approximately the same area as an inner area of a mounting surface of the semiconductor chip, wiring resistance of the power supply path can be reduced, whereby parasitic series resistance or Equivalent Series Resistance (ESR) relating to a power supply of the semiconductor chip can be reduced. Further, the first power supply board, the second insulating film, and the second power supply board constitute a power supply noise removal capacitor (bypass capacitor) having a capacitance comparable to or larger than that of a parasitic capacitor of a mesh electrode structure formed in an LSI. Due to the low ESR, the electrodes of low ESL (parasitic series inductance) formed by the first power supply plate and the second power supply plate, and the relatively large capacitance formed by the two plates, the signal line noise and the power supply noise can be reduced, and stable operation at high frequencies of the LSI can be realized.

In the semiconductor device, the semiconductor chip may include a first inner power supply pad connected to the first power supply board and a second inner power supply pad connected to the second power supply board in an inner region of the plurality of peripheral electrode pads. The first power supply board may include a first inner power supply terminal connected to the first inner power supply pad and the substrate. The second power supply board may include a second inner power supply terminal connected to the second inner power supply pad and the substrate. The semiconductor chip may be supplied with power from the substrate via the first and second internal power supply terminals.

According to this configuration, power can be directly supplied from the substrate to the semiconductor chip via the power supply pad formed in the inner region of the peripheral electrode pad without passing through the power supply line. Therefore, the power supply line between the substrate and the semiconductor chip can be minimized. Therefore, the power supply line resistance and inductance can be further reduced, and the impedance with respect to the high frequency of the semiconductor chip power supply can be reduced. Further, the first power supply plate, the second insulating film, and the second power supply plate constitute a bypass capacitor in addition to the power supply structure. Therefore, the bypass capacitor can be directly connected to the semiconductor chip without passing through the wiring line, whereby a lower ESL can be achieved and the power supply noise removal effect during high-frequency operation of the LSI can be improved.

In the semiconductor device, the plurality of peripheral electrode pads may include a first peripheral power supply pad connected to the first power supply board and a second peripheral power supply pad connected to the second power supply board. The first power supply board may include a first peripheral power supply terminal connected to the first peripheral power supply pad. The second power supply board may include a second peripheral power supply terminal connected to the second peripheral power supply pad. The semiconductor chip may be further configured to be supplied with power from the substrate via the first peripheral power supply terminal and the second peripheral power supply terminal.

According to this configuration, power can be further supplied from the substrate to the semiconductor chip via the peripheral power supply pad of the semiconductor chip. Therefore, it is possible to cope with a plurality of power supply systems of the semiconductor chip.

In the semiconductor device, the plurality of peripheral electrode pads may be arranged in two rows at an inner periphery and an outer periphery, the first peripheral power supply pad and the second peripheral power supply pad may be peripheral electrode pads arranged at the inner periphery, and the peripheral electrode pads arranged at the outer periphery may include a third peripheral power supply pad and a fourth peripheral power supply pad. The semiconductor device may further include an outer power supply plate structure disposed in an outer peripheral portion of the semiconductor chip and close to the semiconductor chip as viewed in a plan view, the outer power supply plate structure including a third power supply plate connected to a third peripheral terminal of the third peripheral power supply pad, a third insulating film formed on the third power supply plate, and a fourth power supply plate formed on the third insulating film and including a fourth peripheral terminal connected to the fourth peripheral power supply pad.

According to this structure, power can also be supplied to the semiconductor chip from the outer peripheral portion of the semiconductor chip. That is, the power supply path from the substrate to the semiconductor chip can be further increased. Furthermore, the bypass capacitor connected to the semiconductor chip may not be configured as a separate, discrete component but rather be configured to access the outer periphery of the semiconductor chip in a direct manner without passing through a wiring line.

The semiconductor device may further include a first connection portion for electrically connecting the third power supply plate and the first power supply plate, a second connection portion for electrically connecting the fourth power supply plate and the second power supply plate, and a third connection portion for connecting the second insulating film and the third insulating film.

According to this configuration, the inner power board structure and the outer power board structure are electrically connected and integrated through the first to third connecting portions, whereby the selection of the power supply manner from the substrate to the semiconductor chip can be increased. For example, the configuration for supplying power directly from the substrate to the inside power supply board structure (the first and second inside power supply pads, the first and second inside power supply terminals, and the like) may be omitted.

In the semiconductor device, the third power supply plate may include a first power supply land connected to the substrate, and the fourth power supply plate may include a second power supply land connected to the substrate.

According to this configuration, power can be supplied from the substrate to the semiconductor chip via the external power supply board structure.

In the semiconductor device, the semiconductor chip may have a rectangular shape as viewed in plan, the outer power supply plate structure may be arranged to surround an outer peripheral portion of the rectangular semiconductor chip, and the first power supply land and the second power supply land may be arranged at positions on extension lines of diagonals of the rectangular shape.

According to this configuration, by providing the first power supply land and the second power supply land at positions on the extension line of the diagonal line of the semiconductor chip, a space for signal wiring from the semiconductor chip to the substrate can be easily secured, whereby signal wiring to the substrate can be easily designed.

In the semiconductor device, the first power supply plate and the third power supply plate, the second power supply plate and the fourth power supply plate, and the second insulating film and the third insulating film may be respectively arranged on the same plane.

According to this configuration, the respective power supply boards and the respective insulating films can be formed on the same plane simultaneously and collectively. Therefore, the manufacturing steps for the chip internal power board structure and the chip external power board structure can be reduced.

According to the present invention, in a semiconductor device having a semiconductor chip (LSI) flip-chip mounted on a substrate, an inner power supply board structure is provided in an inner region of a peripheral electrode pad of the semiconductor chip, whereby a wiring system noise reduction effect and a shielding effect can be improved, and a low impedance of a power supply during a high frequency operation of the LSI can be realized.

Drawings

Fig. 1 is a schematic cross-sectional view of a semiconductor device according to a first embodiment;

fig. 2 is a partial plan view of the semiconductor device viewed from the relay board side;

FIG. 3 is a schematic plan view showing the relationship between the power board structure and the LSI chip;

fig. 4 is a graph showing the frequency characteristic of the S parameter;

fig. 5 is a sectional view illustrating a manufacturing step of a semiconductor device;

fig. 6 is a sectional view illustrating a manufacturing step of a semiconductor device;

fig. 7 is a sectional view illustrating a manufacturing step of a semiconductor device;

fig. 8 is a sectional view illustrating a manufacturing step of a semiconductor device;

fig. 9 is a sectional view illustrating a manufacturing step of the semiconductor device;

fig. 10 is a sectional view illustrating a manufacturing step of a semiconductor device;

fig. 11 is a sectional view illustrating a manufacturing step of a semiconductor device;

fig. 12 is a partial sectional view illustrating the manner of connection of the power supply pads at the center portion of the LSI chip;

fig. 13 is a partial sectional view illustrating the manner of connection of the ground plate at the center portion of the LSI chip;

fig. 14 is a schematic plan view illustrating the relationship of a power board structure and an LSI chip of a semiconductor device according to a second embodiment;

fig. 15 is a schematic plan view illustrating the relationship of another power board structure and LSI chip of the second embodiment; and

fig. 16 is a schematic plan view illustrating the relationship between another power board structure and an LSI chip of the second embodiment.

Detailed Description

First embodiment

A first embodiment will be explained with reference to fig. 1 to 13.

1. Structure of semiconductor device

As shown in fig. 1, the semiconductor device 10 generally includes a relay board (an example of a "substrate") 1 and an LSI chip (an example of a "semiconductor chip") 2. Between the relay board 1 and the LSI chip 2, an inner power board structure 40 is formed to supply power from the relay board 1 side to the LSI chip 2.

The inboard power strip structure 40 includes a power strip (an example of a "first power strip") 41 and a ground strip (an example of a "second power strip") 43. Between the power supply voltage plate 41 and the ground plate 43, an insulating film (an example of a "second insulating film") 42 is formed to insulate the respective plates.

The power supply voltage plate 41 and the ground plate 43 may be configured of Al (aluminum) or Cu (copper), etc., for example, having a thickness ranging from 3 μm (micrometer) to 10 μm. The insulating film 42 is configured of, for example, an STO (strontium titanate) film, for example, having a relative dielectric constant (∈ 0) of 23, and a film thickness ranging from, for example, 0.1 μm to 0.4 μm. The relative dielectric constant (ε 0) of the second insulating film may be, for example, in a wide range of 8 to 100 or more. Preferably, the second insulating film is an insulating film of a so-called paraelectric material or a high dielectric material.

Fig. 1 corresponds to a cross-sectional view of a semiconductor device 10, approximately corresponding to a cross-sectional view taken along the chain line a-a of fig. 2. Fig. 2 is a perspective view of the LSI chip 2 on the mounting surface 2M side as viewed from the relay board 1 side. Fig. 2 mainly shows a configuration related to the wiring pattern 32 formed on the top surface 11 of the relay board 1. Fig. 3 is a plan view of the LSI chip 2 on the mounting surface 2M side as viewed from the ground plate 43 side. Fig. 3 mainly shows a configuration related to connection of the power supply voltage board 41 and the ground board 43 to the LSI chip 2.

As shown in fig. 3, the LSI chip 2 includes a plurality of peripheral electrode pads 21 arranged in two rows in the inner and outer peripheries in the peripheral portion facing the mounting face 2M of the relay board 1. The plurality of peripheral electrode pads 21 include an outer peripheral electrode pad 21out on the outer peripheral side, and an inner peripheral electrode pad 21in on the inner peripheral side. As the inner peripheral electrode pad 21in, the plurality of peripheral electrode pads 21 further include a peripheral power supply voltage pad (an example of a "first peripheral power supply pad") 21A connected to the power supply voltage board 41, and a peripheral ground pad (an example of a "second peripheral power supply pad") 21B connected to the ground plate 43.

On the mounting face 2M, a power supply voltage pad (an example of a "first power supply pad") 23A and a ground pad (an example of a "second power supply pad") 23B are formed at a center portion near an inner area of the plurality of peripheral electrode pads 21. In the present embodiment, the LSI chip 2 includes a normal mesh power supply wiring structure.

The power supply voltage board 41 has approximately the same area as the inner area of the plurality of peripheral electrode pads 21in the plan view of the mounting surface 2M, and has an approximately square shape. The power supply voltage board 41 includes an internal power supply voltage terminal ("example of first inner power supply terminal") 44A connected to the power supply voltage pad 23A, and a peripheral power supply voltage terminal ("example of first peripheral power supply terminal") 41A connected to the peripheral power supply voltage pad 21A.

The ground plate 43 has approximately the same area as the power supply voltage plate 41 and has an approximately square shape. The ground plate 43 includes an inner ground terminal (an example of the "second inner power supply terminal") 44B connected to the ground pad 23B, and a peripheral ground terminal (an example of the "second peripheral power supply terminal") 43B connected to the peripheral ground pad 21B. Power is also supplied from the relay board 1 to the LSI chip 2 via the peripheral power supply voltage terminal 41A and the peripheral ground terminal 43B.

Therefore, the inner power plate structure 40 configured by the power supply voltage plate 41, the insulating film (STO film) 42, and the ground plate 43 forms a capacitor structure. Therefore, the inner power board structure 40 also has a power path function and a bypass capacitor function for removing noise occurring in the power path. Specifically, the power supply voltage plate 41 and the ground plate 43 constitute a bypass capacitor flat electrode, and the insulating film 42 constitutes a bypass capacitor dielectric. The inner power board structure 40 (bypass capacitor) is also used as a power source (in a narrow sense) for the LSI chip 2, with the electric charge stored based on the electric power supplied from the relay board 1 side. The power supply voltage board 41, the insulating film 42, and the ground plate 43 need only be formed in the inner area of the plurality of peripheral electrode pads 21 as viewed in the plan view of the mounting face 2M, and their planar shapes are not limited to those shown in fig. 3.

Fig. 4 is a graph showing an example of a simulation result of the frequency characteristic of the S parameter (impedance) relating to the general mesh power supply wiring structure and the power supply board structure according to the present embodiment. As shown in fig. 4, superiority of the power supply impedance characteristic provided by the power supply board structure with respect to the mesh power supply wiring structure can be observed in all frequency regions (10MHz to 50 GHz). It has been confirmed through simulation that the power supply board structure greatly contributes to lowering the impedance of the power supply of the LSI chip, particularly in the frequency region (high frequency region) of 1GHz or more.

Simulation conditions for the mesh power supply wiring structure include: a wiring material of Al; 1 μm upper and lower Al wiring thickness; a wiring width of 30 μm; a wiring pitch of 60 μm;

upper/lower wiring gaps of (1); a relative dielectric constant of 3.8 of the insulating film between the upper/lower wirings; and the simulation area has the same area as the power board structure. The simulation conditions for the power board structure include: a plate material of Al; the thickness of the upper and lower Al plates is 3 μm; longitudinal and transverse widths of the plate of 390 μm, respectively; a plate gap of 0.4 μm; and a relative dielectric constant of 20 for the insulating film between the plates.

As shown in fig. 1, the relay board 1 includes: a plurality of external connection pads 3, 3A, 3B, a chip connection pad 5, board connection pads 9A and 9B, a via hole 31, a wiring pattern 32, a bottom wiring pattern 38, and an insulator portion 35, and the like.

The insulator section 35 is constructed by, for example, curing a prepreg sheet, and the insulator section 35 is disposed between the top surface 11 and the bottom surface 12 on which the LSI chip 2 is mounted.

As shown in fig. 1 and 2, a plurality of chip connection pads 5 are formed on the top surface 11 of the relay board 1 at positions facing the plurality of outer peripheral electrode pads 21out in the LSI chip 2.

As shown in fig. 1 and 2, on the top surface 11 of the relay board 1, a wiring pattern 32 connects the chip connection pad 5 and the via 31.

The external connection pads 3 are arranged on the bottom surface 12 of the relay board 1 at a wider pitch than that of the chip connection pads 5.

As shown in fig. 1, a plurality of vias 31 are formed from the bottom surface 12 side of the relay board 1 through the insulator portion 35 and to the wiring pattern 32 by laser or drilling. Each via 31 electrically connects the wiring pattern 32 and the external connection pad 3 with the conductive material 34 filling the hole.

The via 31 and the external connection pad 3 are connected by the bottom wiring pattern 38. The external connection pads 3 are provided with solder balls 4 for external connection. That is, the semiconductor device 10 is a BGA type semiconductor device. However, this is merely an example, and the semiconductor device may include a Land Grid Array (LGA) type semiconductor device without the solder balls 4.

The chip connection pads 5 formed on the top surface 11 of the relay pad 1 and the outer peripheral electrode pads 21out of the LSI chip 2 are connected via micro solder balls 6 provided to the outer peripheral electrode pads 21out, thereby electrically connecting the relay pad 1 and the LSI chip 2.

The power supply voltage board 41 and the ground board 43 are electrically connected to the LSI chip 2, for example, via the micro gold bumps 7A and 7B, and to the relay board 1, for example, via the micro gold bumps 8A and 8B.

The top surface 11 and the bottom surface 12 of the relay board 1 are protected by a solder resist layer 36. The gap or the like between the LSI chip 2 and the top surface 11 of the relay board 1 is filled with a known underfill resin (not shown).

2. Semiconductor device manufacturing method

Referring to fig. 5 to 13, a method of manufacturing the semiconductor device 10 will now be explained. In fig. 5 to 10, and fig. 12 and 13, the up/down relationship is reversed from that of fig. 1. Fig. 5 to 8 are sectional views taken along line B-B of fig. 3. Fig. 9 to 11 are sectional views taken along line a-a of fig. 2. Fig. 12 is a sectional view taken along line C-C of fig. 3. Fig. 13 is a sectional view taken along line D-D of fig. 3.

First, as shown in fig. 5, in the peripheral portion of the mounting surface 2M of the LSI chip 2, there are formed: a plurality of peripheral electrode pads (21in,21out), a power supply voltage pad 23A, and a ground pad 23B arranged in two rows at the inner periphery and the periphery, and a protective film 22 of nitride or the like is formed with a film thickness of, for example, 1 μm except for the positions where the respective pads are formed. Subsequently, on the protective film 22 except for the boundary where the power supply voltage pad 23A and the ground pad 23B are formed, and in the region where the power supply voltage pad 41 is to be formed, the first BT (bismaleimide) resin film ("example of the first insulating film") 25 is formed with a thickness of 50 μm, for example. The film thickness of the first BT resin film 25 employed herein is preferably determined by a previous experiment or the like based on material characteristics (e.g., relative permittivity) so that the resistance (characteristic impedance) of the internal wiring of the LSI becomes, for example, 100 to 150 Ω. The first insulating film is not limited to the BT resin film.

At this time, in the region including the power supply voltage pad 23A, a first power supply connection opening 24A is formed, and in the region including the ground pad 23B, a first ground connection opening 24B is formed. The first insulating film has a relative dielectric constant (e 0) in a range from 3.5 to 7, for example. Preferably, the first insulating film is a so-called organic insulating film.

Subsequently, as shown in fig. 6, on the power supply voltage pad 23A in the first power supply connection opening 24A, and on the peripheral power supply voltage pad 21A, for example, a micro gold bump 7A for electrically connecting the LSI chip 2 and the power supply voltage board 41 is formed.

Subsequently, the inner power board structure 40 is formed on the first BT resin film 25 in the area inside the plurality of inner peripheral electrode pads 21in the plan view of the mounting face 2M of the LSI chip 2. Specifically, as shown in fig. 3, the inner power board structure 40 is formed in the inner area of the inner peripheral electrode pad 21in, almost occupying the inner area.

As shown in fig. 7, as the inner power supply plate structure 40, a first power supply voltage plate 41 is formed on the first BT resin film 25 except for the first ground connection opening 24B. At this time, the power supply voltage board 41 is in contact with the micro gold bump 7A formed on the power supply voltage pad 23A. The peripheral power supply voltage terminal 41A of the power supply voltage board 41 is in contact with the micro gold bump 7A formed on the peripheral power supply voltage pad 21A. Each of the micro gold bumps 7A is connected to the power supply voltage board 41 by, for example, ultrasonic welding. Thus, the power supply voltage board 41 and the LSI chip 2 are electrically connected. Subsequently, on the power supply voltage board 41 except for the first power supply connection opening 24A, for example, an STO film 42 as an insulating film is formed.

As shown in fig. 8, on the ground pad 23B in the first ground connection opening 24B, and on the peripheral ground pad 21B, for example, a micro gold bump 7B for electrically connecting the LSI chip 2 and the ground plate 43 is formed.

As shown in fig. 9, on the STO film 42 except for the second power supply connection opening 46A, a ground plate 43 is formed, thereby completing the inner power supply board structure 40. At this time, the ground plate 43 is in contact with the micro gold bumps 7B formed on the ground pads 23B. The peripheral ground terminal 43B of the ground plate 43 is in contact with the micro gold bump 7B formed on the peripheral ground pad 21B. Each of the micro gold bumps 7B is connected to the ground plate 43 by, for example, ultrasonic welding. Thus, the ground plate 43 and the LSI chip 2 are electrically connected.

Subsequently, on the ground plate 43 except for the second ground connection opening 46B, the second BT resin film 48 is formed to have a thickness of 25 μm, for example. Subsequently, as shown in fig. 10, on the outer peripheral electrode pad 21out, the micro solder ball 6 is formed.

As shown in fig. 11, the micro solder balls 6 formed on the LSI chip 2 and the chip connection pads 5 formed on the top surface 11 of the relay board 1 are aligned. Also, the inner power supply terminals 44A formed on the power supply voltage board 41 and the micro-gold bumps 8A formed on the relay board 1, for example, are aligned, and further the inner ground terminals 44B formed on the ground plate 43 and the micro-gold bumps 8B formed on the relay board 1, for example, are aligned. Subsequently, the LSI chip 2 is attached to the top surface 11 of the relay board 1 by heating and pressing the micro solder balls 6, and by ultrasonically bonding the micro gold bumps 8A and 8B.

Fig. 12 shows the manner of electrical connection between the micro-gold bumps 8A on the relay board 1 and the power supply voltage pads 23A of the LSI chip 2 at the central portion of the mounting surface 2M of the LSI chip 2 when the relay board 1 and the LSI chip 2 are connected. As shown in fig. 12, at different positions in the center portion, the power supply voltage board 41 is connected to the relay board 1 via the micro gold bumps 8A, and is connected to the LSI chip 2 via the micro gold bumps 7A.

Similarly, fig. 13 shows the manner of electrical connection between the micro gold bumps 8B of the relay board 1 and the ground pads 23B of the LSI chip 2. As shown in fig. 13, the ground plate 43 is connected to the relay board 1 via the micro gold bumps 8B and to the LSI chip 2 via the micro gold bumps 7B at different positions in the center portion.

Subsequently, solder balls 4 for external connection are formed on the external connection pads 3, thereby completing the semiconductor device 10 as shown in fig. 1. In the first embodiment, the connection between the inside power supply board structure 40 and the LSI chip 2 may be provided only via the power supply voltage pad 23A and the ground pad 23B in the central portion of the mounting face 2M of the LSI chip 2. Alternatively, the connection may be provided only via the peripheral power supply voltage pad 21A and the peripheral ground pad 21B in the peripheral portion of the mounting face 2M of the LSI chip 2.

The order of manufacturing the semiconductor device 10 is not limited to the above-described order and may be changed as needed.

3. Effect of the first embodiment

According to the present embodiment, the power supply path for supplying power to the LSI chip 2 is formed as the inner power supply board structure 40 occupying almost the inner area and having approximately the same area as the inner area in the inner area of the peripheral electrode pad 21 formed on the mounting face 2M of the LSI chip 2 as viewed in a plan view. Therefore, the wiring resistance of the power supply path can be reduced, and the ESR related to the power supply to the LSI chip 2 can be reduced.

Specifically, on the protective film 22 (thickness: about 1 μm) of the LSI chip 2, for example, a first BT resin film 25 having a thickness of 50 μm is formed. On the first BT resin film 25, the power supply voltage plate 41 has, for example, a thickness of 3 μm to 10 μm, and is formed in an area comparable to the inner side region of the inner peripheral electrode pad 21 in. It has been confirmed through simulation that such a configuration of the power supply wiring structure of the semiconductor device 10 reduces the characteristic impedance of the power supply wiring of the mesh electrode structure in the LSI chip 2 and the crosstalk noise, and also reduces the characteristic impedance of the signal wiring in the LSI chip 2 and the crosstalk noise. That is, it has been confirmed that by the configuration of the power supply voltage board 41 via the first BT resin film 25, the characteristic impedance of the internal wiring of the LSI chip 2 including the mesh electrode structure can be reduced, and the noise reduction effect can be improved.

The power supply voltage board 41, the insulating film (STO film) 42, and the ground plate 43 for constituting the inner power supply board structure 40 relating to the power supply wiring structure also constitute a power supply noise removal capacitor (bypass capacitor). The bypass capacitor constructed by the inner power board structure 40 has a capacitance comparable to or larger than the parasitic capacitor of the mesh electrode structure formed inside the LSI chip 2. Therefore, a low impedance can be realized in the high frequency operation (high frequency region: see fig. 4) of the power supply (bypass capacitor) of the LSI chip 2, whereby the power supply noise reduction effect can be improved.

At this time, power is supplied from the relay board 1 to the LSI chip 2 via the power supply voltage pad 23A and the inner power supply terminal 44A, and via the ground pad 23B and the internal ground terminal 44B. That is, power is directly supplied from the relay board 1 to the LSI chip 2 without passing through a separate power supply path. Therefore, the power supply path between the relay board 1 and the LSI chip 2 can be minimized, whereby the power supply path resistance can be further reduced, and the ESR related to the power supply to the LSI chip 2 can be reduced. Further, the bypass capacitor constructed by the inner power board structure 40 is directly connected to the LSI chip 2 without passing through a wiring path. This also improves the power supply noise removal effect of the bypass capacitor.

Power supply from the relay board 1 to the LSI chip 2 is generated via the peripheral power supply voltage pad 21A and the peripheral power supply voltage terminal 41A, and via the peripheral ground pad 21B and the peripheral ground terminal 43B. Therefore, when the configuration of the LSI chip 2 includes the power supply electrode pads in the peripheral electrode pads 21, power can be supplied from the relay board 1 to the LSI chip 2 via the inner power supply board structure 40. That is, in the configuration including the inner power board structure 40, it is possible to cope with a plurality of power supply systems of the LSI chip 2.

Second embodiment

A second embodiment will now be explained with reference to fig. 14 to 16. In the following description, portions similar to those of the first embodiment will be designated by similar symbols and the description thereof will be omitted for the purpose of simplifying the description.

According to the second embodiment, an example will be explained in which a power supply board structure for providing power supply wiring and a bypass capacitor is additionally provided outside the area of the LSI chip 2. Specifically, as shown in fig. 14, the semiconductor device 10A according to the second embodiment is provided with four outer power supply plate structures 50,60,70, and 80 arranged in an outer peripheral portion of the LSI chip 2 as viewed in a plan view, in addition to the inner power supply plate structure 40. The number of the outer power board structures is not limited to four, and may be, for example, one or five. The position and plane shape of the outside power board structure are not limited to those shown in fig. 14.

The outside power board structure 50 includes: a third power supply board 51 including a third peripheral terminal 51A connected to the third peripheral power supply pad 21C; a fourth power supply board 53 including a fourth peripheral terminal 53B connected to the fourth peripheral power supply pad 21D; and an STO film 52 which is an example of an insulating film formed between the third power supply plate 51 and the fourth power supply plate 53 and insulating the third power supply plate 51 and the fourth power supply plate 53 from each other (an example of a "third insulating film"). Preferably, the third insulating film is an insulating film of a so-called paraelectric material or a high dielectric material.

Similarly, the outer power strip structure 60 includes: a third power supply board 61 including a third peripheral terminal 61A connected to the third peripheral power supply pad 21C; a fourth power supply board 63 including a fourth peripheral terminal 63B connected to the fourth peripheral power supply pad 21D; and an insulating film (an example of "third insulating film") 62 that is formed between the third power supply plate 61 and the fourth power supply plate 63 and insulates the third power supply plate 61 and the fourth power supply plate 63 from each other.

Similarly, the outside power board structure 70 includes: a third power supply board 71 including a third peripheral terminal 71A connected to the third peripheral power supply pad 21C; a fourth power supply board 73 including a fourth peripheral terminal 73B connected to the fourth peripheral power supply pad 21D; and an insulating film (an example of "third insulating film") 72 formed between the third power supply plate 71 and the fourth power supply plate 73 and insulating the third power supply plate 71 and the fourth power supply plate 73 from each other.

Similarly, the outside power board structure 80 includes: a third power supply board 81 including a third peripheral terminal 81A connected to the third peripheral power supply pad 21C; a fourth power supply board 83 including a fourth peripheral terminal 83B connected to the fourth peripheral power supply pad 21D; and an insulating film (an example of "third insulating film") 82 formed between the third power supply plate 81 and the fourth power supply plate 83 and insulating the third power supply plate 81 and the fourth power supply plate 83 from each other.

As shown in fig. 14, each of the third power supply boards (51,61,71,81) includes a first power supply land (54A,64A,74A,84A) connected to the relay board 1, and each of the fourth power supply boards (53,63,73,83) includes a second power supply land (54B,64B,74B,84B) connected to the relay board 1. Power is supplied from the relay board 1 to each of the outside power board structures (50,60,70,80) via each of the first and second power lands.

In the second embodiment, in the respective power supply board structures, the first power supply board 41 and the third power supply board (51,61,71,81), the second power supply board 43 and the fourth power supply board (53,63,73,83), and the insulating film 42 and the insulating film (52,62,72,82) are provided on the same plane, respectively. That is, the power supply board and the insulating film may be simultaneously and commonly formed on the same plane, respectively. In other words, the inner power plate structure 40 and the outer power plate structure (50,60,70,80) can be manufactured simultaneously and jointly. Therefore, the number of manufacturing steps for the semiconductor device 10A can be reduced. However, the respective board configurations of the respective power board structures may not be formed on the same plane. Depending on the configuration of the semiconductor device 10A, the board configuration of any one power board structure may be formed on a plane different from a plane in which the board configuration of another power board structure is formed.

4. Effect of the second embodiment

According to the second embodiment, power can also be supplied from the relay board 1 to the LSI chip 2 from the outer peripheral portion of the LSI chip 2 via the outer power supply board structures 50,60,70, and 80. Therefore, the manner of supplying power from the relay board 1 to the LSI chip 2 can be selected from an increased number of alternatives. For example, when the LSI chip 2 includes a plurality of power supply systems, the second embodiment can cope with the power supply systems in a preferable manner. Further, by the outside power supply board structures 50,60,70, and 80, the bypass capacitor connected to the LSI chip 2 can be directly configured close to the outside periphery of the LSI chip 2 without passing through a wiring line or the like formed separately.

5. Other examples of the second embodiment

The outside power strip structure is not limited to the example shown in fig. 14, and may be implemented as in the case shown in fig. 15, for example. Fig. 15 shows an outboard power strip structure 90, which includes: a third power supply board 91, the third power supply board 91 including a third peripheral terminal 91A connected to the third peripheral power supply pad 21C; a fourth power supply board 93 including a fourth peripheral terminal 93B connected to the fourth peripheral power supply pad 21D; and an STO film 92 which is an example of an insulating film formed between the third power supply board 91 and the fourth power supply board 93 and insulating the third power supply board 91 and the fourth power supply board 93 from each other (an example of a "third insulating film").

The outer power board structure 90 is provided so as to surround the outer peripheral portion of the LSI chip 2. That is, the third power supply board 91, the insulating film 92, and the fourth power supply board 93 are continuously formed so as to surround the outer peripheral portion of the LSI chip 2.

The third power supply plate 91 is provided with a plurality of lands 94A for connection with the relay board 1 (an example of "first power supply land"). The fourth power supply plate 93 is provided with a plurality of lands 94B for connection with the relay board 1 (an example of "second power supply land").

Further, as shown in fig. 15, at four positions along the diagonal line of the LSI chip 2, connection portions 95 for connecting the inner power board structure 40 and the outer power board structure 90 are provided. The connecting portions 95 each include: a first connection portion 95A electrically connecting the third power supply board 91 and the first power supply board 41; a second connection portion 95B electrically connecting the fourth power supply plate 93 and the second power supply plate 43; and a third connection portion 95C connecting the insulating film 42 and the insulating film 92. In this example, the first connection portion 95A, the second connection portion 95B, and the third connection portion 95C are formed at the same position in an overlapping manner and have the same shape. Therefore, in fig. 15, only the first connection portion 95A is illustrated.

The formation manner of the first connection portion 95A, the second connection portion 95B, and the third connection portion 95C is not limited to the manner shown in fig. 15. For example, the first connection portion 95A, the second connection portion 95B, and the third connection portion 95C may be formed at positions along one diagonal line of the LSI chip 2. The first connection portion 95A, the second connection portion 95B, and the third connection portion 95C may not necessarily be formed to overlap at the same position.

In the case of this example, the inner power panel structure 40 and the outer power panel structure 90 are electrically connected and integrated by the first and second connection portions 95A and 95B. Therefore, the manner of supplying power from the relay board 1 to the LSI chip 2 can be selected from an increased number of alternatives. For example, in this case, the configuration (first and second internal power supply terminals (44A,44B), the micro gold bumps (8A,8B), and the like) for supplying power from the center portion on the mounting face 2M of the LSI chip 2 to the LSI chip 2 may be omitted.

Also, as shown in fig. 16, the first power supply land 94A and the second power supply land 94B may be provided at positions on extension lines of diagonal lines of the rectangular shape. By thus providing the first power supply land 94A and the second power supply land 94B at positions on the extension line of the diagonal line of the LSI chip 2, a space for signal wiring from the LSI chip 2 to the relay board 1 can be more easily secured. Therefore, signal wiring to the relay board 1 can be easily designed.

The first power supply land 94A and the second power supply land 94B are not limited to being arranged at positions on the extension line of the diagonal line of the LSI chip 2. For example, in the plan view of fig. 16, the connection pads may be arranged at opposite positions in a mirror-image manner, or they may be arranged at discrete positions.

Other embodiments

The present invention is not limited to the embodiments described with reference to the drawings, and the following embodiments, for example, may be included within the technical scope of the present invention.

(1) In an embodiment, the power supply voltage plate is a first power supply plate and the ground plate is a second power supply plate. However, this is merely an example, and the supply voltage plate may be the second supply plate and the ground plate may be the first supply plate. The same applies to the third power supply board and the fourth power supply board.

(2) In the embodiment, the relay board (interposer) 1 is described as a substrate on which a semiconductor chip is flip-chip mounted, for example. However, the substrate is not limited to the relay board, and may be a double-sided circuit substrate.

(3) In the embodiment, the plurality of electrode pads 21 of the LSI chip 2 are formed in two rows at the inner and outer peripheries, for example, but is not limited thereto. The present invention can be applied, for example, when the plurality of electrode pads 21 of the LSI chip 2 are formed in one row or three rows.

(4) In the embodiments, the respective power supply board structures of the present application are applied to LSI chips including a general mesh power supply wiring structure. However, it is not limited thereto, and the power supply board structure of the present application may be applied to an LSI chip that does not include a general mesh power supply wiring structure.