阅读说明：本技术 半导体存储装置 (Semiconductor storage ) 是由 九鬼知博 滨田龙文 于 2019-02-27 设计创作，主要内容包括：实施方式的半导体存储装置包含：衬底；所述衬底的上方的半导体；单元晶体管,包含形成在所述半导体中的部分；第1氮化硅层,设置在所述单元晶体管的上方；以及第2氮化硅层,设置在所述第1氮化硅层上,具有与所述第1氮化硅层的特性不同的特性。(The semiconductor storage of embodiment includes: substrate；The semiconductor of the top of the substrate；Cell transistor includes the part being formed in the semiconductor；The top of the cell transistor is arranged in 1st silicon nitride layer；And the 2nd silicon nitride layer, it is arranged on the 1st silicon nitride layer, there is the characteristic different from the characteristic of the 1st silicon nitride layer.)

1. a kind of semiconductor storage, has:

Substrate；

The semiconductor of the top of the substrate；

Cell transistor includes the part being formed in the semiconductor；

1st silicon nitride layer of the top of the cell transistor；And

2nd silicon nitride layer is arranged on the 1st silicon nitride layer, has the spy different from the characteristic of the 1st silicon nitride layer Property.

2. semiconductor storage according to claim 1, wherein the 2nd silicon nitride layer has than the 1st nitridation The low refractive index of the refractive index of silicon layer.

3. semiconductor storage according to claim 2, wherein the 2nd silicon nitride layer has than the 1st nitridation The high internal stress of the internal stress of silicon layer.

4. semiconductor storage according to claim 3, wherein the 2nd silicon nitride layer has than the 1st nitridation The high density of the density of silicon layer.

5. semiconductor storage according to claim 4, wherein the 2nd silicon nitride layer has than the 1st nitridation The more N-H key amounts of the amount of the N-H key of silicon layer.

6. semiconductor storage according to claim 5, wherein the 1st silicon nitride layer has than the 2nd nitridation The more Si -- H bond amounts of the amount of the Si -- H bond of silicon layer.

7. semiconductor storage according to claim 6, wherein the 2nd silicon nitride layer is located at the semiconductor storage The surface of device.

8. semiconductor storage according to claim 3, wherein the 2nd silicon nitride layer is located at the semiconductor storage The surface of device.

9. semiconductor storage according to claim 2, wherein the 2nd silicon nitride layer has than the 1st nitridation The high density of the density of silicon layer.

10. semiconductor storage according to claim 9 is deposited wherein the 2nd silicon nitride layer is located at the semiconductor The surface of storage device.

11. semiconductor storage according to claim 2 is deposited wherein the 2nd silicon nitride layer is located at the semiconductor The surface of storage device.

12. semiconductor storage according to claim 1, wherein the 2nd silicon nitride layer has than the 1st nitridation The high internal stress of the internal stress of silicon layer.

13. semiconductor storage according to claim 12, wherein the 2nd silicon nitride layer has than the 1st nitrogen The high density of the density of SiClx layer.

14. semiconductor storage according to claim 13 is deposited wherein the 2nd silicon nitride layer is located at the semiconductor The surface of storage device.

15. semiconductor storage according to claim 12 is deposited wherein the 2nd silicon nitride layer is located at the semiconductor The surface of storage device.

16. semiconductor storage according to claim 1, wherein the 2nd silicon nitride layer has than the 1st nitridation The high density of the density of silicon layer.

17. semiconductor storage according to claim 16 is deposited wherein the 2nd silicon nitride layer is located at the semiconductor The surface of storage device.

18. semiconductor storage according to claim 1, wherein the 1st silicon nitride layer has than the 2nd nitridation The more Si -- H bond amounts of the amount of the Si -- H bond of silicon layer.

19. semiconductor storage according to claim 18 is deposited wherein the 2nd silicon nitride layer is located at the semiconductor The surface of storage device.

Technical field

Background technique

Semiconductor chip has passivation layer on its surface sometimes.

Summary of the invention

Detailed description of the invention

Fig. 1 is diagrammatically denoted by the cross section structure of the semiconductor storage of the 1st embodiment.

Fig. 2 indicates the downside silicon nitride layer of the 1st embodiment and the characteristic of upside silicon nitride layer.

Fig. 3 indicates the cross section structure of the semiconductor storage of the change case of the 1st embodiment.

Fig. 4 indicates the downside silicon nitride layer of the 2nd embodiment and the characteristic of upside silicon nitride layer.

Fig. 5 indicates the downside silicon nitride layer of the 2nd embodiment and the characteristic of upside silicon nitride layer.

Fig. 6 indicates the downside silicon nitride layer of the 2nd embodiment and the characteristic of upside silicon nitride layer.

Embodiment relates generally to a kind of semiconductor storage.