阅读说明：本技术 一种Si基绝缘栅双极晶体管IGBT结构及其方法 (Si-based insulated gate bipolar transistor IGBT structure and method thereof ) 是由 陈利 陈彬 于 2021-08-22 设计创作，主要内容包括：本发明涉及晶体管技术领域,具体为一种Si基绝缘栅双极晶体管IGBT结构及其方法,一种Si基绝缘栅双极晶体管IGBT结构,包括双极晶体管IGBT,所述双极晶体管IGBT的外壁顶端通过固定套接有盖板,所述盖板的顶部开设有滑槽,所述滑槽的内部滑动连接有接线端子,所述接线端子通过导线与双极晶体管IGBT的端子电性连接。本发明设置的接线端子可以在滑槽中进行滑动,当双极晶体管IGBT所连接的元器件连接位于双极晶体管IGBT不匹配时,无需重新的双极晶体管IGBT内部结构进行设计,也无需借助其它工具进行连接,直接移动接线端子的位置即可。(The invention relates to the technical field of transistors, in particular to a Si-based insulated gate bipolar transistor IGBT structure and a method thereof. The connecting terminal can slide in the sliding groove, when the connection of the components connected with the bipolar transistor IGBT is positioned in the unmatched position of the bipolar transistor IGBT, the new design of the internal structure of the bipolar transistor IGBT is not needed, other tools are not needed for connection, and the position of the connecting terminal is directly moved.)

1. A Si-based Insulated Gate Bipolar Transistor (IGBT) structure comprising a bipolar transistor (IGBT) (1), characterized in that: the outer wall top of bipolar transistor IGBT (1) has connect apron (2) through fixed cover, spout (3) have been seted up at the top of apron (2), the inside sliding connection of spout (3) has binding post (4), binding post (4) pass through wire (5) and the terminal electric connection of bipolar transistor IGBT (1).

2. The structure of a Si-based insulated gate bipolar transistor IGBT according to claim 1, characterized in that: binding post (4) include body (401), limiting plate (402), wiring groove (403) and copper conducting layer (404), limiting plate (402) have all been cup jointed at both ends about the outer wall of body (401), wiring groove (403) are all installed in the both ends of body (401) intercommunication, the inner wall laminating of wiring groove (403) has copper conducting layer (404), two through conducting strip (405) electric connection between copper conducting layer (404).

3. The Si-based insulated gate bipolar transistor IGBT structure according to claim 2, characterized in that: the conducting strip (405) is arranged inside the tube body (401), the surface of the circular inner wall of the copper conducting layer (404) is fixedly connected with a conducting copper rod (406), and the tail end of the conducting copper rod (406) is fixedly connected with a conducting copper ring (407).

4. The Si-based insulated gate bipolar transistor IGBT structure according to claim 2, characterized in that: and a wire winder (6) is rotatably arranged in the wire connection groove (403), and the tail end of the wire winder (6) penetrates through the side wall of the wire connection groove (403) and is arranged outside the wire connection groove (403).

5. The Si-based insulated gate bipolar transistor IGBT structure according to claim 4, characterized in that: winder (6) include first bracing piece (601), conducting block (602) and second bracing piece (603), the one end of first bracing piece (601) runs through copper conducting layer (404) and rotates the inner wall of connecting in wiring groove (403), other one end fixed connection conducting block (602) of first bracing piece (601), conducting block (602) keep away from one end fixed connection second bracing piece (603) of first bracing piece (601), the end of second bracing piece (603) is rotated the copper and is run through the lateral wall of conducting layer (404) and conducting strip (405) and place in the outside of wiring groove (403), second bracing piece (603) are arranging wiring groove (403) outside one end fixedly connected with knob (604) in, first bracing piece (601) are rotated and are cup jointed in the inside of conducting copper ring (407) and are laminated with it.

6. The Si-based insulated gate bipolar transistor IGBT structure according to claim 4, characterized in that: the winder (6) further comprises a mounting hole (605) and winding grooves (606), the mounting hole (605) is formed in the center of the conductive block (602), and the winding grooves (606) are symmetrically formed in two sides of the mounting hole (605).

7. The Si-based insulated gate bipolar transistor IGBT structure of claim 6, characterized in that: the winding groove (606) is of a semicircular structure, and the conductive block (602) is of a shuttle-shaped structure.

8. A method of deriving a Si-based insulated gate bipolar transistor, IGBT, structure according to any of claims 1-7, characterized by: the method comprises the following steps:

the first step is as follows: the installation is fixed, and the bipolar transistor IGBT (1) is installed at the corresponding position of the PCB through a screw;

the second step is that: adjusting the position, namely adjusting the position of the wiring terminal (4) according to the wiring position of a part connected with the bipolar transistor IGBT (1), and adjusting the position of the wiring terminal (4) by sliding the wiring terminal (4) when adjusting the position of the wiring terminal (4);

the third step: the wiring, in inserting the mounting hole (605) of spooler (6) with the electric wire of spare part, afterwards, rotate knob (604), knob (604) drive conducting block (602) through second bracing piece (603) and rotate, along with the rotation of conducting block (602), the electric wire winding that drives spare part is on the surface of conducting block (602), and the electric wire block is in the inside of wire winding groove (606) at last.

Technical Field

The invention relates to the technical field of transistors, in particular to a Si-based insulated gate bipolar transistor IGBT structure and a method thereof.

Background

The IGBT and the insulated gate bipolar transistor are composite fully-controlled voltage-driven power semiconductor devices consisting of BJTs and MOS, and have the advantages of high input impedance of the MOSFET and low conduction voltage drop of GTR. The GTR saturation voltage is reduced, the current carrying density is high, but the driving current is large; the MOSFET has small driving power, high switching speed, large conduction voltage drop and small current carrying density. The IGBT integrates the advantages of the two devices, and has small driving power and reduced saturation voltage. The method is very suitable for being applied to the fields of current transformation systems with direct-current voltage of 600V or more, such as alternating-current motors, frequency converters, switching power supplies, lighting circuits, traction transmission and the like.

The existing bipolar transistor IGBT terminal is fixed, when other components are connected, the terminal cannot be adjusted according to the position of the components, and when the connecting terminal of the components cannot be matched with the position of the terminal of the bipolar transistor IGBT, the structure of the bipolar transistor IGBT terminal needs to be designed in a targeted mode or the terminal of the bipolar transistor IGBT terminal needs to be connected by means of other tools.

Disclosure of Invention

The present invention is directed to a Si-based insulated gate bipolar transistor IGBT structure and a method thereof, so as to solve the problems mentioned in the background art. In order to achieve the purpose, the invention provides the following technical scheme: the utility model provides a Si base insulated gate bipolar transistor IGBT structure, includes bipolar transistor IGBT, bipolar transistor IGBT's outer wall top has connect the apron through fixed cover, the spout has been seted up at the top of apron, the inside sliding connection of spout has binding post, binding post passes through wire and bipolar transistor IGBT's terminal electric connection.

Preferably, binding post includes body, limiting plate, wiring groove and copper conducting layer, the limiting plate has all been cup jointed at both ends about the outer wall of body, the wiring groove is all installed in the both ends of body intercommunication, the inner wall laminating in wiring groove has copper conducting layer, two through conducting strip electric connection between the copper conducting layer.

Preferably, the conducting strip is arranged inside the tube body, the surface of the circular inner wall of the copper conducting layer is fixedly connected with a conducting copper rod, and the tail end of the conducting copper rod is fixedly connected with a conducting copper ring.

Preferably, a wire winder is rotatably mounted inside the wire connecting groove, and the tail end of the wire winder penetrates through the side wall of the wire connecting groove and is arranged outside the wire connecting groove.

Preferably, the winder includes first bracing piece, conducting block and second bracing piece, the one end of first bracing piece runs through the copper conducting layer and rotates the inner wall of connecting at the wiring groove, the other one end fixed connection conducting block of first bracing piece, the one end fixed connection second bracing piece of first bracing piece is kept away from to the conducting block, the end of second bracing piece is rotated and is run through the copper conducting layer and the lateral wall of conducting strip and place in the outside of wiring groove, the one end fixedly connected with knob outside the wiring groove is being placed in to the second bracing piece, first bracing piece is rotated and is cup jointed in the inside of electrically conductive copper ring and with the laminating of electrically conductive copper ring.

Preferably, the winder further comprises a mounting hole and a winding groove, the mounting hole is formed in the center of the conductive block, and the winding grooves are symmetrically formed in two sides of the mounting hole.

Preferably, the winding groove is of a semicircular structure, and the conductive block is of a shuttle-shaped structure.

A method of a Si-based insulated gate bipolar transistor, IGBT, the method comprising the steps of:

the first step is as follows: the installation is fixed, and the bipolar transistor IGBT is installed at the corresponding position of the PCB through a screw;

the second step is that: adjusting the position, namely adjusting the position of the wiring terminal according to the wiring position of a part connected with the bipolar transistor IGBT, and adjusting the position of the wiring terminal by sliding the wiring terminal when adjusting the position of the wiring terminal;

the third step: the wiring inserts the electric wire of spare part in the mounting hole of spooler, afterwards, rotates the knob, and the knob passes through the second bracing piece and drives the conducting block rotation, along with the rotation of conducting block, drives the electric wire winding of spare part on the surface of conducting block, and the electric wire block is in the inside in wire winding groove at last.

Compared with the prior art, the invention has the beneficial effects that:

the connecting terminal can slide in the sliding groove, when the connection of the components connected with the bipolar transistor IGBT is positioned in the unmatched position of the bipolar transistor IGBT, the new design of the internal structure of the bipolar transistor IGBT is not needed, other tools are not needed for connection, and the position of the connecting terminal is directly moved.

The wiring terminal can fix the electric wire in the wiring terminal by rotating the knob without using other tools for auxiliary installation, facilitates wiring work, and brings the advantage of no need of using tools in comparison with the condition that the conventional wiring terminal needs to use a screwdriver to match with a screw to clamp the electric wire in the wiring terminal.

Of course, it is not necessary for any product in which the invention is practiced to achieve all of the above-described advantages at the same time.

Drawings

FIG. 1 is a schematic view of the overall structure of the present invention;

FIG. 2 is a cross-sectional view of FIG. 1 in accordance with the present invention;

fig. 3 is a cross-sectional view of a terminal of the present invention;

fig. 4 is a schematic view of the winder of the present invention.

In the figure: 1. a bipolar transistor IGBT; 2. a cover plate; 3. a chute; 4. a wiring terminal; 401. a pipe body; 402. a limiting plate; 403. a wiring slot; 404. a conductive layer made of copper; 405. a conductive sheet; 406. a conductive copper rod; 407. a conductive copper ring; 5. a wire; 6. a winder; 601. a first support bar; 602. a conductive block; 603. a second support bar; 604. a knob; 605. mounting holes; 606. a winding slot.

Detailed Description

The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be obtained by workers skilled in the art without any inventive work based on the embodiments of the present invention, are within the scope of the present invention.

The first embodiment is as follows:

referring to fig. 1 to 4, the present invention provides a technical solution: a Si-based insulated gate bipolar transistor IGBT structure comprises a bipolar transistor IGBT1, wherein the top end of the outer wall of a bipolar transistor IGBT1 is fixedly sleeved with a cover plate 2, the top of the cover plate 2 is provided with a sliding groove 3, the inside of the sliding groove 3 is connected with a wiring terminal 4 in a sliding mode, and the wiring terminal 4 is electrically connected with a terminal of the bipolar transistor IGBT1 through a lead 5.

In this embodiment, as shown in fig. 3, the connection terminal 4 includes a tube 401, a limiting plate 402, a connection groove 403, and a copper conductive layer 404, the limiting plate 402 is sleeved at both upper and lower ends of an outer wall of the tube 401, the connection groove 403 is installed at both ends of the tube 401 in a communicating manner, the copper conductive layer 404 is attached to an inner wall of the connection groove 403, and the two copper conductive layers 404 are electrically connected through a conductive sheet 405.

In this embodiment, as shown in fig. 3, the conductive sheet 405 is disposed inside the tube 401, the conductive copper rod 406 is fixedly connected to the circular inner wall surface of the conductive layer 404 made of copper, and the conductive copper ring 407 is fixedly connected to the end of the conductive copper rod 406.

In this embodiment, as shown in fig. 3 and 4, the wire connecting slot 403 is rotatably installed with the wire winder 6 inside, and the end of the wire winder 6 penetrates through the side wall of the wire connecting slot 403 and is placed outside the wire connecting slot 403.

In this embodiment, as shown in fig. 3 and 4, the bobbin 6 includes a first supporting rod 601, a conductive block 602, and a second supporting rod 603, one end of the first supporting rod 601 penetrates through the copper conductive layer 404 and is rotatably connected to the inner wall of the wire connecting slot 403, the other end of the first supporting rod 601 is fixedly connected to the conductive block 602, one end of the conductive block 602 away from the first supporting rod 601 is fixedly connected to the second supporting rod 603, the end of the second supporting rod 603 rotatably penetrates through the copper conductive layer 404 and the conductive sheet 405 and is disposed outside the wire connecting slot 403, one end of the second supporting rod 603 disposed outside the wire connecting slot 403 is fixedly connected to a knob 604, and the first supporting rod 601 is rotatably sleeved inside the conductive copper ring 407 and is attached thereto.

In this embodiment, as shown in fig. 3 and 4, the bobbin 6 further includes a mounting hole 605 and a winding slot 606, the mounting hole 605 is formed in the center of the conductive block 602, and the winding slots 606 are symmetrically formed on two sides of the mounting hole 605.

In this embodiment, as shown in fig. 3 and 4, the winding slot 606 has a semicircular structure, and the conductive block 602 has a shuttle-shaped structure.

The use method and the advantages of the invention are as follows: when the Si-based insulated gate bipolar transistor IGBT structure is used, the working process is as follows:

the position of the connecting terminal 4 is adjusted by fixing the bipolar transistor IGBT1 at a corresponding position with a screw, and then, according to the connecting position of the component connected with the bipolar transistor IGBT1, the position of the connecting terminal 4 is adjusted by sliding the position of the connecting terminal 4, by this operation, it is avoided that the structure of the bipolar transistor IGBT1 is redesigned or other external devices are used for connection, then, the electric wire of the component connected with the bipolar transistor IGBT1 is inserted into the mounting hole 605 of the bobbin 6, the knob 604 is rotated, the bobbin 6 starts to rotate, and then, the electric wire is wound in the winding groove 606 on the surface of the bobbin 6, since the first support rod 601 and the conductive block 602 are made of conductive materials, the current can pass through the conductive block 602, the first support rod 601, the conductive copper ring 407, the conductive copper rod 406, the two copper conductive layers 404 and 405, by this connecting method, no screwdriver is needed, the wiring work is facilitated.

Example two:

a method for a Si-based Insulated Gate Bipolar Transistor (IGBT) comprises the following steps:

the first step is as follows: the installation is fixed, and the bipolar transistor IGBT1 is installed on the corresponding position of the PCB through a screw;

the second step is that: adjusting the position of the connecting terminal 4 according to the wiring position of a component connected with the bipolar transistor IGBT1, and adjusting the position of the connecting terminal 4 by sliding the connecting terminal 4 when adjusting the position of the connecting terminal 4;

the third step: the wiring, insert the electric wire of spare part in the mounting hole 605 of spooler 6, afterwards, rotate knob 604, knob 604 drives the conducting block 602 through second bracing piece 603 and rotates, along with the rotation of conducting block 602, drives the electric wire winding of spare part on the surface of conducting block 602, and the electric wire block is in the inside of wire winding groove 606 at last.

The foregoing shows and describes the general principles, essential features, and advantages of the invention. It will be understood by those skilled in the art that the present invention is not limited to the embodiments described above, and the preferred embodiments of the present invention are described in the above embodiments and the description, and are not intended to limit the present invention. The scope of the invention is defined by the appended claims and equivalents thereof.