阅读说明：本技术 半导体装置及半导体装置的制造方法 (Semiconductor device and method for manufacturing semiconductor device ) 是由 高尾腾真 于 2020-10-19 设计创作，主要内容包括：本发明的目的在于,提供确保填充材料的注入性且改善散热性的半导体装置。半导体装置包含半导体模块、基板以及填充材料。半导体模块包含：半导体芯片；控制IC(Integrated Circuit),其对半导体芯片的驱动进行控制；以及封装件,其通过绝缘材料而将半导体芯片以及控制IC封装。在基板安装半导体模块。填充材料设置于半导体模块的封装件的下表面与基板之间。基板包含贯通孔,该贯通孔设置于封装件的下方、且与封装件内的半导体芯片相比设置于控制IC的附近。(The invention aims to provide a semiconductor device which ensures the injection property of a filling material and improves the heat dissipation property. The semiconductor device includes a semiconductor module, a substrate, and a filling material. The semiconductor module includes: a semiconductor chip; a control ic (integrated circuit) which controls driving of the semiconductor chip; and a package that packages the semiconductor chip and the control IC through an insulating material. A semiconductor module is mounted on a substrate. The filling material is arranged between the lower surface of the packaging piece of the semiconductor module and the substrate. The substrate includes a through-hole provided below the package and in the vicinity of the control IC compared to the semiconductor chip in the package.)

1. A semiconductor device, comprising:

a semiconductor module including a semiconductor chip, a control IC that controls driving of the semiconductor chip, and a package that packages the semiconductor chip and the control IC through an insulating material, wherein the IC is an integrated circuit;

a substrate on which the semiconductor module is mounted; and

a filling material disposed between a lower surface of the package of the semiconductor module and the substrate,

the substrate includes a through-hole provided below the package and in the vicinity of the control IC with respect to the semiconductor chip in the package.

2. The semiconductor device according to claim 1,

the semiconductor module further includes a lead portion having one end connected to the semiconductor chip or the control IC inside the package and the other end exposed to the outside from the inside of the package,

the substrate further includes a slit located inside the package and below the package, compared to a base end portion that is a portion where the lead portion is exposed from an outer surface of the package.

3. The semiconductor device according to claim 1 or 2,

the package includes a convex portion or a concave portion at a lower portion of the package.

4. The semiconductor device according to any one of claims 1 to 3,

the through hole has a convex planar shape.

5. The semiconductor device according to any one of claims 1 to 4,

the substrate further includes a metal pattern covering a side surface of the through hole and extending from an edge of the through hole to a front surface and a back surface of the substrate.

6. The semiconductor device according to claim 5,

the substrate is provided below the package, and further includes a fine hole smaller than the through hole and having a side surface covered with the metal pattern.

7. A method for manufacturing a semiconductor device includes the steps of:

preparing a semiconductor module including a semiconductor chip, a control IC that controls driving of the semiconductor chip, and a package that packages the semiconductor chip and the control IC through an insulating material, wherein the IC is an integrated circuit, and a substrate including a through hole;

mounting the semiconductor module on the substrate such that the through-hole is located below the package and is located closer to the control IC than the semiconductor chip in the package; and

and injecting a filler between the lower surface of the package of the semiconductor module and the substrate through the through hole.

Technical Field

The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

Background

The surface-mount power semiconductor module is generally used without mounting a heat sink. In this case, heat generated from the semiconductor chip inside the package is radiated from the surface thereof into the air by the resin constituting the package, or radiated to the substrate via the terminal communicating from the inside of the package to the outside. The heat dissipation efficiency of the path of heat dissipation from the surface of the package into the air depends on the size of the package of the power semiconductor module, and therefore, improvement thereof is difficult. Therefore, by enlarging the area of the circuit pattern of the substrate, the heat dissipation efficiency of the path for dissipating heat from the inside of the package to the substrate through the terminal is improved. However, the increase in the demand for miniaturization of the substrate makes it difficult to increase the area of the circuit pattern, and there is a concern that the improvement in the performance of the semiconductor module is restricted due to the limitation of the heat dissipation characteristics.

Patent document 1 discloses a technique of injecting a heat dissipation filler between a semiconductor element and a metal substrate from an injection port provided in the metal substrate in order to improve heat dissipation of the semiconductor element.

Patent document 1: japanese patent laid-open publication No. 2017-99035

When the filler is provided between the package of the semiconductor module and the circuit board on which the semiconductor module is mounted, the package and the board are in close contact with each other with the filler interposed therebetween. Therefore, heat generated by the semiconductor chip inside the package is transferred from the lower portion of the package to the substrate. However, when the injection hole provided in the substrate for injecting the filler is disposed below the semiconductor chip having a large heat generation amount, heat generated by the semiconductor chip is transmitted from the lower portion of the package to the injection hole. That is, the injection hole interferes with the heat dissipation effect from the semiconductor chip to the substrate.

Disclosure of Invention

The present invention has been made to solve the above problems, and an object thereof is to provide a semiconductor device in which heat dissipation is improved while ensuring injectability of a filler.

The semiconductor device according to the present invention includes a semiconductor module, a substrate, and a filler. The semiconductor module includes: a semiconductor chip; a control ic (integrated circuit) which controls driving of the semiconductor chip; and a package that packages the semiconductor chip and the control IC through an insulating material. A semiconductor module is mounted on a substrate. The filling material is arranged between the lower surface of the packaging piece of the semiconductor module and the substrate. The substrate includes a through-hole provided below the package and in the vicinity of the control IC compared to the semiconductor chip in the package.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, a semiconductor device in which heat dissipation is improved while ensuring injectability of a filler can be provided.

The objects, features, aspects and advantages of the present invention will become more apparent from the following detailed description and the accompanying drawings.

Drawings

Fig. 1 is a plan view showing the structure of a semiconductor device according to embodiment 1.

Fig. 2 is a sectional view showing the structure of a semiconductor device according to embodiment 1.

Fig. 3 is a flowchart showing a method for manufacturing a semiconductor device according to embodiment 1.

Fig. 4 is a plan view showing the structure of the semiconductor device of embodiment 2.

Fig. 5 is a cross-sectional view showing an example of the structure of a semiconductor device according to embodiment 3.

Fig. 6 is a cross-sectional view showing another example of the structure of the semiconductor device according to embodiment 3.

Fig. 7 is a plan view showing the structure of the semiconductor device according to embodiment 4.

Fig. 8 is a sectional view showing the structure of a semiconductor device according to embodiment 5.

Fig. 9 is a plan view showing the structure of a semiconductor device according to embodiment 6.

Description of the reference numerals

1 semiconductor module, 2 semiconductor chip, 3 control IC, 4 wire, 5 bonding material, 6 bonding material, 7 package, 8A lead portion, 8B lead portion, 9 bonding material, 10 circuit pattern, 11 substrate, 12 through hole, 13 lower region, 14 filling material, 15 slit, 16 convex portion, 17 concave portion, 18 through hole, 19 metal pattern, 20 micro hole.

Detailed Description

< embodiment 1 >

Fig. 1 is a plan view showing the structure of a semiconductor device according to embodiment 1. Fig. 2 is a cross-sectional view showing the structure of the semiconductor device according to embodiment 1, showing a cross section a-a' shown in fig. 1.

The semiconductor device includes a semiconductor module 1, a substrate 11, and a filler 14. The semiconductor module 1 includes a semiconductor chip 2, a control ic (integrated circuit)3, a package 7, and lead portions 8A and 8B.

The semiconductor chip 2 includes a semiconductor element, and is formed of a semiconductor such as Si, or a so-called wide bandgap semiconductor such as SiC or GaN, for example. The Semiconductor chip 2 includes, for example, an igbt (insulated Gate Bipolar transistor), a mosfet (metal Oxide Semiconductor Field Effect transistor), a schottky barrier diode, and the like. The semiconductor chip 2 is, for example, a power semiconductor chip (power semiconductor chip).

The control IC 3 is an IC for controlling driving of the semiconductor chip 2. The control IC 3 is connected to the semiconductor chip 2 through a wire 4. The amount of heat generated when the control IC 3 is driven is smaller than the amount of heat generated when the semiconductor chip 2 is driven.

One end of the lead portion 8A is connected to the semiconductor chip 2 through the bonding material 5 inside the package 7, and the other end is exposed to the outside of the package 7. Similarly, one end of the lead portion 8B is connected to the control IC 3 via the bonding material 6, and the other end is exposed to the outside of the package 7. The other ends of the lead portions 8A and 8B of embodiment 1 have a structure protruding to the outside of the package 7. The other ends of the lead portions 8A and 8B function as connection terminals.

The package 7 includes the semiconductor chip 2, the control IC 3, and one ends of the lead portions 8A and 8B inside, and is encapsulated with a mold resin.

The substrate 11 includes a circuit pattern 10 and a through hole 12. The circuit pattern 10 is joined to the other ends of the lead portions 8A and 8B via the joining material 9. Thereby, the semiconductor module 1 is mounted on the substrate 11. The through hole 12 is provided below the package 7 and in the vicinity of the control IC 3 with respect to the semiconductor chip 2 in the package 7. For example, as shown in fig. 1, the distance from the edge of the through hole 12 to the control IC 3 is shorter than the distance from the edge of the through hole 12 to the semiconductor chip 2 in a plan view. Alternatively, for example, the distance from the center of the through hole 12 to the control IC 3 is shorter than the distance from the center of the through hole 12 to the semiconductor chip 2. The through hole 12 is provided in the lower region 13 of the control IC 3, as shown in fig. 1, for example.

The filler 14 is provided between the lower surface of the package 7 of the semiconductor module 1 and the substrate 11. The filler material 14 is, for example, a thermal grease.

Next, a method for manufacturing a semiconductor device according to embodiment 1 will be described. Fig. 3 is a flowchart showing a method for manufacturing a semiconductor device according to embodiment 1.

In step S1, the semiconductor module 1 including the semiconductor chip 2, the control IC 3, and the package 7 and the substrate 11 including the through-hole 12 are prepared.

In step S2, the semiconductor module 1 is mounted on the substrate 11 such that the through-hole 12 is located below the package 7 and is located closer to the control IC 3 than the semiconductor chip 2 in the package 7.

In step S3, filler 14 is injected from through hole 12 between the lower surface of package 7 of semiconductor module 1 and substrate 11. That is, the through-hole 12 is an injection hole for the filler 14. The semiconductor device shown in fig. 1 and 2 is manufactured by the above manufacturing method.

As described above, the semiconductor device of embodiment 1 includes the semiconductor module 1, the substrate 11, and the filler 14. The semiconductor module 1 includes: a semiconductor chip 2; a control IC 3 that controls driving of the semiconductor chip 2; and a package 7 that encapsulates the semiconductor chip 2 and the control IC 3 with an insulating material. The semiconductor module 1 is mounted on the substrate 11. The filler 14 is provided between the lower surface of the package 7 of the semiconductor module 1 and the substrate 11. The substrate 11 includes a through-hole 12, and the through-hole 12 is provided below the package 7 and in the vicinity of the control IC 3 with respect to the semiconductor chip 2 in the package 7.

Since the package 7 and the substrate 11 are in close contact with each other with the filler 14 interposed therebetween, heat generated from the semiconductor chip 2 is transmitted from the lower portion of the package 7 to the substrate 11. When the through-hole 12 is disposed in the vicinity of the semiconductor chip 2 generating a large amount of heat, the heat generated by the semiconductor chip 2 is transmitted to the through-hole 12. That is, the through-hole 12 hinders the heat radiation effect from the semiconductor chip 2 to the substrate 11. However, the through-hole 12 of embodiment 1 is provided in the vicinity of the control IC 3, which generates a smaller amount of heat than the semiconductor chip 2. Therefore, the heat generated by the semiconductor chip 2 is more efficiently transferred to the substrate 11 than the through-hole 12. Such a heat dissipation path improves heat dissipation of the semiconductor device. In particular, when the semiconductor chip 2 is a power semiconductor chip (power semiconductor chip) for controlling large power, the amount of heat generation is large. Therefore, the semiconductor device of embodiment 1 achieves a further advantageous effect when the semiconductor chip 2 is a power semiconductor chip. Further, since the through-hole 12 is located below the package 7 of the semiconductor chip 2, the filler 14 can be accurately and efficiently injected.

In embodiment 1, a surface-mount power semiconductor device is shown as an example, but the semiconductor device is not limited to this configuration and may be a lead-insertion power semiconductor device.

< embodiment 2 >

A semiconductor device and a method for manufacturing the semiconductor device in embodiment 2 will be described. Embodiment 2 is a subordinate concept of embodiment 1. Note that the same configuration and operation as those in embodiment 1 will not be described.

Fig. 4 is a plan view showing the structure of the semiconductor device of embodiment 2. The semiconductor device of embodiment 2 is the same as embodiment 1 except for the structure of the substrate 11.

The substrate 11 includes a slit 15 in addition to the through-hole 12. The slit 15 is provided inside the package 7 and below the package 7, compared to a base end portion, which is a portion where the lead portions 8A and 8B are exposed from the outer surface of the package 7. Further, the slit 15 penetrates the substrate 11. In embodiment 2, 2 slits 15 are provided, but the number of slits 15 is not limited to this. The width of the slit 15 is, for example, 1 mm.

In the method of manufacturing a semiconductor device according to embodiment 2, the steps of preparing the semiconductor module 1 and the substrate 11 and the step of mounting the semiconductor module 1 on the substrate 11 are the same as steps S1 and S2 shown in fig. 3.

In step S3, when excess filler 14 is injected from through hole 12 into the space between package 7 and substrate 11, excess filler 14 falls down below substrate 11 through slit 15.

Thus, the slit 15 prevents the filler 14 from adhering to the other ends of the lead portions 8A and 8B. In particular, in the case where the filler 14 has conductivity, the slit 15 prevents short-circuiting between the leads.

< embodiment 3 >

A semiconductor device and a method for manufacturing the semiconductor device in embodiment 3 will be described. Embodiment 3 is a subordinate concept of embodiment 1. Note that the same configuration and operation as those in embodiment 1 or 2 will not be described.

Fig. 5 is a cross-sectional view showing an example of the structure of a semiconductor device according to embodiment 3. Fig. 6 is a cross-sectional view showing another example of the structure of the semiconductor device according to embodiment 3. The semiconductor device according to embodiment 3 is the same as that according to embodiment 1 except for the structure of the package 7 of the semiconductor module 1.

As shown in fig. 5, the package 7 includes a protrusion 16 at a lower portion. Alternatively, the package 7 includes the concave portion 17 as shown in fig. 6.

In the method of manufacturing a semiconductor device according to embodiment 3, the steps of preparing the semiconductor module 1 and the substrate 11 and the step of mounting the semiconductor module 1 on the substrate 11 are the same as steps S1 and S2 shown in fig. 3.

In step S3, when excess filler 14 is injected from through hole 12 between package 7 and substrate 11, protrusion 16 or recess 17 of package 7 blocks excess filler 14.

In this way, the convex portion 16 or the concave portion 17 of the package 7 prevents the filler 14 from adhering to the other end of the lead portions 8A, 8B. In particular, when the filler 14 has conductivity, the protruding portion 16 or the recessed portion 17 prevents the lead portions 8A and 8B from being short-circuited.

< embodiment 4 >

A semiconductor device and a method for manufacturing the semiconductor device in embodiment 4 will be described. Embodiment 4 is a subordinate concept of embodiment 1. Note that the same configurations and operations as those in any of embodiments 1 to 3 will not be described.

Fig. 7 is a plan view showing the structure of the semiconductor device according to embodiment 4. The semiconductor device of embodiment 4 is the same as embodiment 1 except for the structure of the substrate 11. The substrate 11 includes a through hole 18, and the through hole 18 has a convex planar shape.

In the method of manufacturing a semiconductor device according to embodiment 4, the steps of preparing the semiconductor module 1 and the substrate 11 and the step of mounting the semiconductor module 1 on the substrate 11 are the same as steps S1 and S2 shown in fig. 3.

The filler 14 injected from the convex through-hole 18 smoothly extends over the entire lower portion of the package 7. The convex through-hole 18 improves the injectability of the filler 14.

< embodiment 5 >

A semiconductor device and a method for manufacturing the semiconductor device in embodiment 5 will be described. Embodiment 5 is a subordinate concept of embodiment 1. Note that the same configurations and operations as those in any of embodiments 1 to 4 will not be described.

Fig. 8 is a sectional view showing the structure of a semiconductor device according to embodiment 5. The semiconductor device of embodiment 5 is the same as embodiment 1 except for the structure of the substrate 11.

The substrate 11 includes a metal pattern 19, and the metal pattern 19 covers the side surface of the through hole 12 and extends from the edge of the through hole 12 to the front surface and the back surface of the substrate 11. That is, the metal pattern 19 and the through-hole 12 form a so-called via hole or through-hole. The size of the metal pattern 19 extending on the surface of the substrate 11 is preferably the same as that of the package 7.

Such a metal pattern 19 diffuses heat transferred from the semiconductor chip 2 through the package 7 and the filler 14 to the back surface of the substrate 11, thereby improving the heat radiation effect.

< embodiment 6 >

A semiconductor device and a method for manufacturing the semiconductor device in embodiment 6 will be described. Embodiment 6 is a subordinate concept of embodiment 1. Note that the same configurations and operations as those in any of embodiments 1 to 5 are not described.

Fig. 9 is a plan view showing the structure of a semiconductor device according to embodiment 6. The semiconductor device of embodiment 6 is the same as embodiment 1 except for the structure of the substrate 11. In fig. 9, the semiconductor chip 2 and the control IC 3 are not shown, but the arrangement is the same as that of embodiment 1.

The substrate 11 further includes at least 1 fine hole 20 smaller than the through hole 12 and having a side surface covered with the metal pattern 19 below the package 7. In this case, the side surface of the through-hole 12 is not necessarily covered with the metal pattern 19. In order to secure the contact area between the lower surface of the package 7 and the substrate 11, the fine holes 20 are preferably smaller. The minute holes 20 are, for example, 0.4mm in diameter.

The minute holes 20 diffuse heat transferred from the semiconductor chip 2 through the package 7 and the filler 14 to the back surface of the substrate 11, thereby improving the heat radiation effect.

The present invention can freely combine the respective embodiments within the scope of the present invention, or can appropriately modify or omit the respective embodiments.

The present invention has been described in detail, but the above description is illustrative in all aspects, and the present invention is not limited thereto. It is understood that numerous modifications, not illustrated, can be devised without departing from the scope of the invention.