阅读说明：本技术 嵌入在封装基板中的深沟槽电容器 (Deep trench capacitor embedded in package substrate ) 是由 金楠勋 特克久·康 斯克特·李·柯克曼 权云星 于 2020-11-30 设计创作，主要内容包括：本公开涉及嵌入在封装基板中的深沟槽电容器。在一些方面,芯片封装包括集成电路裸片,该集成电路裸片具有用于集成电路的一个或多个电路的配电电路。芯片封装还包括与集成电路不同的基板,并且该基板具有其上安装有集成电路裸片的第一表面,和与第一表面相对的第二表面。基板包括形成在第一表面或第二表面中的至少一个表面中的一个或多个腔。芯片封装还包括被设置在该一个或多个腔的至少一个腔中的一个或多个深沟槽电容器。每个深沟槽电容器通过导体连接到配电电路。(The present disclosure relates to deep trench capacitors embedded in package substrates. In some aspects, a chip package includes an integrated circuit die having power distribution circuitry for one or more circuits of the integrated circuit. The chip package also includes a substrate distinct from the integrated circuit and having a first surface on which the integrated circuit die is mounted and a second surface opposite the first surface. The substrate includes one or more cavities formed in at least one of the first surface or the second surface. The chip package also includes one or more deep trench capacitors disposed in at least one of the one or more cavities. Each deep trench capacitor is connected to a distribution circuit by a conductor.)

1. A chip package, comprising:

an integrated circuit die comprising power distribution circuitry for one or more circuits in an integrated circuit;

a substrate different from the integrated circuit die and having (i) a first surface on which the integrated circuit die is mounted, and (ii) a second surface opposite the first surface, the substrate including one or more cavities formed in at least one of the first and second surfaces; and

one or more deep trench capacitors disposed in at least one of the one or more cavities, each deep trench capacitor connected to the power distribution circuit by a conductor.

2. The chip package of claim 1, wherein each cavity is formed on the first surface and extends from the first surface into the substrate.

3. The chip package of claim 1, wherein each cavity is formed on the second surface and extends into the substrate from the second surface.

4. The chip package of claim 1, wherein each cavity and each deep trench capacitor is disposed below the power distribution circuit.

5. The chip package of claim 1, wherein the substrate includes a via for each conductor routed through the substrate from the deep trench capacitor in the via to a contact of the integrated circuit die.

6. The chip package of claim 1, wherein:

the one or more cavities comprise a plurality of cavities; and is

The substrate includes substrate walls between adjacent cavities.

7. The chip package of claim 1, wherein:

each cavity is formed on the second surface and extends from the second surface into the substrate;

the second surface comprises a ball grid array with a plurality of interconnect pads, each interconnect pad extending from the second surface to an end of the interconnect pad; and is

Each deep trench capacitor extends out of a respective cavity without extending beyond ends of the plurality of interconnect pads.

8. A method for manufacturing a chip package, comprising:

forming one or more cavities in a substrate having (i) a first surface configured to receive an integrated circuit die, and (ii) a second surface opposite the first surface, each cavity being formed in at least one of the first and second surfaces;

mounting one or more deep trench capacitors in each cavity; and

mounting the integrated circuit die on the first surface.

9. The method of claim 8, wherein:

each cavity is formed in the first surface; and is

Forming the one or more cavities includes applying one or more layers of substrate stackups to the first surface after mounting the one or more deep trench capacitors in each cavity.

10. The method of claim 8, wherein each deep trench capacitor is electrically connected to the integrated circuit die through a via formed in the substrate.

11. The method of claim 8, wherein forming the one or more cavities comprises etching away a portion of the substrate.

12. The method of claim 8, wherein:

each cavity is formed in the first surface;

prior to mounting the integrated circuit die on the first surface, the one or more deep trench capacitors in each cavity are connected to the integrated circuit die; and is

Mounting the integrated circuit die on the first surface and the one or more deep trench capacitors in each cavity comprises: the integrated circuit die is mounted such that each deep trench capacitor is disposed within one cavity.

13. The method of claim 8, wherein forming the one or more cavities comprises:

applying a release layer to the first surface;

applying one or more build-up layers on the release layer; and

removing the release layer and each portion of each buildup layer that covers the release layer.

14. The method of claim 13, wherein applying the release layer comprises applying the release layer over a portion of the first surface where the cavity is to be formed.

15. A chip package, comprising:

an integrated circuit die;

a substrate having (i) a first surface on which the integrated circuit die is mounted, and (ii) a second surface opposite the first surface, the substrate including one or more cavities formed in at least one of the first and second surfaces; and

one or more capacitors disposed in at least one of the one or more cavities and connected to the integrated circuit die.

16. The chip package of claim 15, wherein the one or more capacitors comprise deep trench capacitors.

17. The chip package of claim 15, wherein the one or more capacitors decouple one or more circuits of the integrated circuit die from power supply circuits of the integrated circuit die.

18. The chip package of claim 15, wherein each cavity is formed on the first surface and extends from the first surface into the substrate.

19. The chip package of claim 15, wherein each cavity is formed on the second surface and extends into the substrate from the second surface.

20. The chip package of claim 15, wherein each cavity and each deep trench capacitor is disposed below the power distribution circuit.

Technical Field

The present disclosure relates to deep trench capacitors embedded in package substrates.

Background

Dynamic noise (di/dt) of processor cores and Application Specific Integrated Circuits (ASICs) becomes more and more problematic due to faster core clock frequencies and higher circuit current consumption. di/dt represents the rate of change of current to the load (e.g., the core of the ASIC). Faster core clock frequencies result in more transient current flow and thus more noise. In addition, higher di/dt noise results in higher voltage losses of power supplied to the circuit.

Disclosure of Invention

This specification describes technologies relating to deep trench capacitors embedded in a package substrate on which an integrated circuit is mounted.

In general, one innovative aspect of the subject matter described in this specification can be embodied in a chip package that includes: an integrated circuit die comprising power distribution circuitry for one or more circuits in an integrated circuit; a substrate different from the integrated circuit and having (i) a first surface on which the integrated circuit die is mounted, and (ii) a second surface opposite the first surface, the substrate including one or more cavities formed in at least one of the first surface or the second surface; and one or more deep trench capacitors disposed in at least one of the one or more cavities, each deep trench capacitor connected to the power distribution circuit by a conductor.

These and other embodiments may each optionally include one or more of the following features. In some aspects, each cavity is formed on the first surface and extends from the first surface into the substrate.

In some aspects, each cavity is formed on the second surface and extends from the second surface into the substrate. In some aspects, each cavity and each deep trench capacitor is disposed below the power distribution circuit. In some aspects, the substrate includes a via for each conductor routed through the substrate from the deep trench capacitor in the via to a contact of the integrated circuit die. In some aspects, the one or more cavities include a plurality of cavities, and the substrate includes substrate walls between adjacent cavities.

In some aspects, each cavity is formed on the second surface and extends from the second surface into the substrate. The second surface may include a ball grid array with a plurality of interconnect pads, each of which extends from the second surface to an end of the interconnect pad. Each deep trench capacitor may extend out of the respective cavity without extending beyond an end of the interconnect pad.

In general, another aspect of the subject matter described in this specification can be embodied in methods for manufacturing chip packages. The method comprises the following steps: forming one or more cavities in a substrate having (i) a first surface configured to receive an integrated circuit die, and (ii) a second surface opposite the first surface, each cavity formed in at least one of the first surface or the second surface; mounting one or more deep trench capacitors in each cavity; and mounting the integrated circuit die on the first surface.

These and other embodiments may each optionally include one or more of the following features. In some aspects, each cavity is formed in the first surface. Forming the one or more cavities includes applying one or more layers of the substrate stack to the first surface after mounting the one or more deep trench capacitors in each cavity.

In some aspects, each deep trench capacitor is electrically connected to the integrated circuit through a via formed in the substrate. In some aspects, forming the one or more cavities includes etching away a portion of the substrate.

In some aspects, each cavity is formed in the first surface, the deep trench capacitor being connected to the integrated circuit die prior to mounting the integrated circuit on the first surface; mounting the integrated circuit die on the first surface and the one or more deep trench capacitors in each cavity comprises: the integrated circuit die is mounted such that each deep trench capacitor is disposed within one of the cavities.

In some aspects, forming one or more cavities comprises: applying a release layer to the first surface; applying one or more build-up layers on the release layer; and removing the release layer and each portion of each of the build-up layers covering the release layer. Applying the release layer may include applying the release layer over a portion of the first surface where the cavity is to be formed.

In general, another aspect of the subject matter described in this specification can be embodied in a chip package that includes: an integrated circuit die; a substrate having (i) a first surface on which the integrated circuit die is mounted, and (ii) a second surface opposite the first surface, the substrate including one or more cavities formed in at least one of the first surface or the second surface; and one or more capacitors disposed in at least one of the one or more cavities and connected to the integrated circuit die.

These and other embodiments may each optionally include one or more of the following features. In some aspects, the one or more capacitors comprise deep trench capacitors. In some aspects, the one or more capacitors decouple one or more circuits of the integrated circuit die from power supply circuitry of the integrated circuit die.

In some aspects, each cavity is formed on the first surface and extends from the first surface into the substrate. In some aspects, each cavity is formed on the second surface and extends from the second surface into the substrate. In some aspects, each cavity and each deep trench capacitor is disposed below the power distribution circuit.

The subject matter described in this specification can be implemented in particular embodiments to realize one or more of the following advantages. By embedding the deep trench capacitors in the substrate of the chip package, rather than on the integrated circuit die, the amount of decoupling capacitance can be increased without increasing the die size. This enables a greater reduction in dynamic noise (di/dt) without increasing the size of the die, and enables a greater reduction in voltage drop caused by noise. The deep trench capacitors may be embedded on one side of the substrate on which the die is mounted or on the opposite side, providing flexibility based on the frequency of load variations that cause noise. For example, deep trench capacitors embedded closer to the die may be smaller and lower in capacitance to account for higher frequency noise because the conductors between the capacitors and the die are shorter, resulting in less increase in inductance relative to farther capacitors. Embedding deep trench capacitors on opposite sides of the substrate may allow larger capacitors with higher capacitance to account for lower frequency noise, since higher capacitance and higher inductance result in lower resonant frequencies.

Various features and advantages of the foregoing subject matter are described below with reference to the drawings. Other features and advantages will be apparent from the subject matter described herein and from the claims.

Drawings

Fig. 1 is a cross-sectional view of an example Integrated Circuit (IC) package that includes an IC and a deep trench capacitor embedded in a substrate of the IC package.

Fig. 2 is a diagram of an example process for fabricating an IC package that includes an IC and a deep trench capacitor embedded in a substrate of the IC package.

Fig. 3 is a cross-sectional view of another example IC package that includes an IC and a deep trench capacitor embedded in a substrate of the IC package.

Fig. 4 is a diagram of an example process for fabricating an IC package that includes an IC and a deep trench capacitor embedded in a substrate of the IC package.

Fig. 5 is a cross-sectional view of another example IC package that includes an IC and a deep trench capacitor embedded in a substrate of the IC package.

Fig. 6 is a diagram of an example arrangement of cavities for a deep trench capacitor.

Fig. 7 is a diagram of an example arrangement of cavities for a deep trench capacitor.

Figure 8 is a diagram of another example arrangement of cavities for a deep trench capacitor.

Like reference numbers and designations in the various drawings indicate like elements.

Detailed Description

In general, this document describes techniques related to deep trench capacitors embedded in a package substrate on which an Integrated Circuit (IC) is mounted. By adding a decoupling capacitor to the chip package, di/dt noise caused by the higher core clock frequency and higher current consumption of high performance ICs can be suppressed. However, due to the limited real estate of the die size of the chip, the ability to keep decoupling capacitors added to the die to offset the additional noise generated by the faster clock frequency and higher current consumption is limited.

The chip package described in this document includes a decoupling capacitor in the form of a deep trench capacitor embedded in the package substrate on which the IC is mounted, rather than embedded in the IC itself. For example, the IC may be mounted to one side of a substrate, and the other side of the substrate may include a Ball Grid Array (BGA) for connecting the package to a Printed Circuit Board (PCB). The package substrate may include one or more cavities on one or both sides of the package substrate. The deep trench capacitor can be disposed, for example, in a cavity and attached to the substrate or the die itself.

In general, a trench capacitor is a capacitor formed by the steps of: etching one or more trenches into a substrate or wafer; forming an outer or buried plate electrode around and below the trench; forming a dielectric layer by covering the outer or buried plate electrode with a dielectric material; and an inner or upper electrode is formed on the dielectric layer. A deep trench capacitor is a trench capacitor whose trench aspect ratio (depth to width ratio) meets or exceeds a threshold, or whose trench depth meets or exceeds a threshold. For example, the aspect ratio of the deep trench capacitor may be about 5 to 10, but may vary. The height of the deep trench capacitors can also vary, but is typically on the order of 64 microns (μm) to 80 microns. Although the following description is primarily directed to deep trench capacitors, other types of capacitors may be used.

Fig. 1 is a cross-sectional view of an example IC package 100 that includes an IC110 and a deep trench capacitor 170 embedded in a substrate 130 of the IC package 100. The IC package 100 includes: a substrate 130; an IC110, the IC110 being mounted on a substrate 130; and BGA balls 160, the BGA balls 160 including interconnect pads with solder balls for connecting the IC package 100 to a PCB. The IC110 may be an ASIC or other suitable type of IC.

In this example, IC package 100 is a flip chip package in which solder bumps 120 are used to connect interconnect pads of IC110 to substrate 130. The solder bumps 120 include contact areas (e.g., pads) of the IC110 and solder balls for connecting the contact areas to corresponding contact areas (e.g., pads) of the substrate 130. Although not shown in fig. 1, substrate 130 may include vias that connect the contact areas of IC110 to the interconnect pads of BGA balls 160.

The substrate 130 includes a substrate core 132 and substrate stacks 131 and 133 on both sides of the substrate core 132. One or both of the substrate stacks 131 and 133 may be added to the substrate core 132, for example, when manufacturing the IC package 100. In some embodiments, the substrate 130 includes only one or none of the substrate stacks 131 or 133. For example, the substrate 130 may include a substrate stack 131 or 133 only on a side of the substrate core 132 that will include a cavity for a deep trench capacitor.

The substrate 130 includes a cavity 134 for a deep trench capacitor 170. In this example, the cavity 134 is formed in the substrate stack 131 on the top side of the substrate 130. After the deep trench capacitor 170 is mounted on the surface of the substrate 130 (e.g., on the surface of the substrate core 132 or the substrate stack 131), the cavity 134 can be formed by etching away a portion of the substrate stack 131 or by adding a laminate substrate around the deep trench capacitor 170. If etching is used, the deep trench capacitor 170 can be installed in the cavity 134 after the cavity 134 is formed. The cavity 134 may also be formed after laser ablation using mechanical grinding or removal of the build-up film. The deep trench capacitor 170 can be mounted in the cavity using, for example, pick and place and/or flip chip assembly techniques.

An example deep trench capacitor 170 is shown in fig. 1. However, many different types of deep trench capacitors can be used. In this example, the deep trench capacitors are higher density silicon capacitors formed using a silicon wafer 173. The deep trench capacitor 170 includes two trenches 177A and 177B, but other deep trench capacitors can include a single trench or more than two trenches. The trenches 177A and 177B may be formed by etching away the silicon wafer 173.

The deep trench capacitor 170 includes an oxide liner 172 and four electrodes 171A-171D. The oxide liner 172 covers the walls and bottom of the trenches 177A and 177B. The first electrode 171A covers the oxide liner 172. A first dielectric 176A covers the first electrode 171A, and a second electrode 171B covers the first dielectric 176A. That is, the first dielectric 176A is disposed between and separates the first electrode 171A and the second electrode 171B.

The second dielectric 176B covers the second electrode 171B, and the third electrode 171C covers the second dielectric 176B, so that the second dielectric 176B is disposed between and separates the second electrode 171B and the third electrode 171C. Similarly, a third dielectric 176C covers the third electrode 171C, and a fourth electrode 171D covers the third dielectric 176C, such that the third dielectric 176C is disposed between and separates the third electrode 171C and the fourth electrode 171D. Electrodes 171A-171D are made of a conductive material and dielectrics 176A-176C are made of an insulating material.

Both the first electrode 171A and the third electrode 171C are connected to the contact 174. Similarly, the second electrode 171B and the fourth electrode 171D are both connected to the contact 175. Contacts 174 and 175 of each deep trench capacitor 170 are electrically connected to IC 110. For example, contacts 174 and 175 of each deep trench capacitor 170 can be connected to core power distribution circuitry of the IC 110.

Each contact 174 and 175 may be connected to an IC110 using a via of the substrate 130 and a contact area of the IC 110. The through-holes are conductive holes in the substrate 130. Since these conductive holes can add inductance to the circuits to which the deep trench capacitors 170 are connected, the deep trench capacitors 170 can be disposed close to those circuits of the IC110 to reduce the amount of increased inductance. In this example, the deep trench capacitors 170 are located below the core power distribution circuitry 121 of the IC110, which core power distribution circuitry 121 distributes power to the core or other circuitry of the IC 110. Deep trench capacitors 170 may be connected in the core power distribution circuit 121 in parallel with the cores (or other circuits) of the IC110 to decouple these circuits from the core power distribution circuit 121 and reduce di/dt noise imposed on the circuits.

To make the deep trench capacitor 170 more efficient, the path connecting the deep trench capacitor 170 should be the path with the least resistance/inductance among the possible paths. A closest location with parallel vias/traces/planes may be preferred for capacitor mounting.

The IC package 100 may include various numbers of deep trench capacitors 170. In this example, the IC package 100 includes a single cavity 134 that includes three deep trench capacitors 170. In other examples, the substrate 130 can include a plurality of cavities that each include one or more deep trench capacitors. Some example arrangements of substrate cavities are shown in fig. 6-8 and described below.

The number of deep trench capacitors 170, the size of the deep trench capacitors 170 (and thus the size of the cavity 134), and the location of the deep trench capacitors 170 can be selected based on the IC110 and its configuration or noise characteristics. These capacitors may be located on the bottom side of substrate 130 (the side with substrate stack 133) because the bottom side of substrate 130 may have more space for larger deep trench capacitors than the top side of substrate 130 (the side with stack 131). For applications with higher noise frequencies, the deep trench capacitors may be located on the top side closer to the IC 110.

Fig. 2 is a diagram illustrating an example process 200 for fabricating an IC package including an IC and a deep trench capacitor embedded in a substrate of the IC package. The example process 200 may be performed using an IC package manufacturing apparatus.

The deep trench capacitor 270 is mounted 201 on the substrate 230. The substrate 230 includes a substrate core 232 and substrate stacks 231 and 233 on both sides of the substrate core 232. In this example, the deep trench capacitor 270 is mounted on the substrate stack 231 on top of the substrate core 232 and on the side of the substrate 230 where the IC is to be mounted.

The first buildup layer 280 is applied to the surface of the substrate stack 231 (202). The stack 280 may be a laminate. The build-up layer 280 may be applied to the entire surface of the substrate stack 231, including between adjacent deep trench capacitors 270.

The second buildup layer 282 is applied to the first buildup layer 280, and a through hole (203) is formed in the buildup layers 280 and 282. The second buildup layer 282 can also be a laminate. Vias (including vias 290 and 291) may be formed by drilling away (e.g., mechanically or using a laser) some laminate or other build-up material and adding conductive material to the drilled holes. These vias may be used to connect other vias of substrate 230 (e.g., vias for routing interconnect pads of a BGA) to contact areas of an IC mounted on substrate 230. For example, each via may include a conductive pad on the top surface of the buildup layer 282 that connects, for example, using a solder ball of the IC to a contact area of the IC. In this manner, the surface of substrate 230 is configured to receive an IC.

The vias can also include vias that connect the deep trench capacitors 270 to the IC. For example, vias can be disposed over the deep trench capacitors 270 to connect contacts of the deep trench capacitors 270 to the IC.

The IC 210 is mounted on the substrate 230 (204). The IC 210 includes bumps 220 (e.g., controlled fold (collapse) die attach (C4) bumps, solder bumps, or copper bumps) for mounting the IC 210 onto the surface of the substrate 230 formed by the second buildup layer 282. Bumps 220 include contact areas (e.g., pads) of IC 210 and solder or copper pillars for connecting the contact areas to corresponding contact areas (e.g., pads) of substrate 230. The IC 210 may be placed onto the surface of the substrate 230 such that the bumps 220 are over corresponding contact areas on the surface of the substrate 230. The bumps 220 may then be heated and cooled to form a bond between the contact areas of the IC 210 and their corresponding contact areas of the surface of the substrate 230.

Similar to the IC package 100 of fig. 1, the IC package formed using the process 200 results in a flip chip package with a deep trench capacitor 270 located below the core power distribution circuitry 221 of the IC 210 to reduce the inductive path of the via. Solder balls may also be formed on the BGA 260 on the bottom surface of the substrate 230.

Fig. 3 is a cross-sectional view of another example IC package 300, the IC package 300 including an integrated circuit 310 and a deep trench capacitor 370 embedded in a substrate 330 of the IC package 300. The IC package 300 includes: a substrate 330; an IC310, the IC310 mounted on a substrate 330; and BGA balls 360, the BGA balls 360 including interconnect pads with solder balls for connecting the IC package 300 to a PCB. The IC310 may be an ASIC or other suitable type of IC.

In this example, IC package 300 is a flip chip package in which solder bumps 320 are used to connect interconnect pads of IC310 to substrate 330. The solder bumps 320 include contact areas (e.g., pads) of the IC310 and solder balls for connecting the contact areas to corresponding contact areas (e.g., pads) of the substrate 330. Although not shown in fig. 3, substrate 330 may include vias that connect the contact areas of IC310 to the interconnect pads of BGA balls 360.

Similar to the substrate 130 of fig. 1, the substrate 330 includes a substrate core 332 and substrate stacks 331 and 333 on both sides of the substrate core 332. For example, one or both of the substrate stacks 331 and 333 may be added to the substrate core 332 when manufacturing the IC package 300. In some embodiments, the substrate 330 includes only one or none of the substrate stacks 331 or 333. For example, the substrate 330 may include a substrate stack 331 or 333 only on the side of the substrate core 332 that will include the cavity for the deep trench capacitor.

The substrate 330 includes a cavity 334 for a deep trench capacitor 370. The cavity 334 is formed in the substrate stack 331 on the top side of the substrate 330. The cavity 334 may be formed by etching away a portion of the substrate stack 331. In this example, the deep trench capacitor 370 is mounted on the IC310, rather than being mounted in the cavity 334 and connected to the IC 310. In contrast, the cavity 334 provides space within the substrate 330 for the deep trench capacitor 370. The cavity 334 may be sized and shaped to fit a deep trench capacitor 370 attached to the IC 310.

The deep trench capacitor 370 (which may be the same as or similar to the deep trench capacitor 170 of fig. 1) may include a contact electrically connected to a contact region (e.g., a pad) of the IC 310. For example, the deep trench capacitors 370 can be soldered to the IC310 using bumps 320 (e.g., C4 bumps) prior to mounting the IC310 on the substrate 310.

Fig. 4 is a diagram of an example process 400 for fabricating an IC package that includes an IC and a deep trench capacitor embedded in a substrate of the IC package. The example process 400 may be performed using an IC package manufacturing apparatus.

The release layer 435 is applied to the substrate 430 (401). The substrate 430 includes a substrate core 432 and substrate stacks 431 and 433 on both sides of the substrate core 432. The release layer 435 may be applied to each region of the top surface of the substrate stack 431 where a cavity is to be formed. In this example, the cavity will be formed in the center of the top surface of the substrate stack 431.

The release layer 435 may be made of a material less adhesive than the rest of the substrate 430. In this way, the release layer 435 can be easily peeled off when the block is later removed from the substrate for the cavity structure.

The build-up layers 436 and 437 are applied to the surface of the substrate stack 431 (402). These stacks 436 and 437 can each be a laminate. The build-up layer 436 may be applied to the entire surface of the substrate stack 431 and over the release layer 435. In addition, through holes are formed in the buildup layers 436 and 437. These vias, including vias 490 and 491, may be formed by drilling away (e.g., mechanically or using a laser) some laminate or other build-up material and adding conductive material to the drilled holes. These vias may be used to connect other vias of substrate 430 (e.g., vias for routing interconnect pads of a BGA) to contact areas of an IC mounted on substrate 430. For example, each via may comprise a conductive pad on the top surface of the buildup layer 437 that connects, for example, using a solder ball of the IC to a contact area of the IC.

Forming cavities 434 (403). The cavity 434 may be formed by removing the release layer 435 and portions 436A and 437A of the buildup layers 436 and 437, respectively, formed over the release layer 435. For example, laser ablation may be used to remove the release layer 435 and portions 436A and 437A of the build-up layers 436 and 437. A laser may be applied to and between the edges of the release layer 435 to remove material. In another example, etching or another suitable technique may be used to remove the release layer 435 and portions 436A and 437A of the buildup layers 436 and 437.

The IC 410 is mounted 404 on a substrate 430. In this example, the IC 410 includes a deep trench capacitor 470 attached to the IC 410. The IC 410 may be mounted such that the deep trench capacitor 470 is disposed in the cavity 434. The cavity 434 can be formed deep enough and wide enough to accommodate the deep trench capacitor 470. The deep trench capacitor 470 may extend into the cavity 434 and contact or not contact the bottom surface of the cavity 434.

The IC 410 also includes bumps 420 (e.g., C4 bumps) for mounting the IC 410 to the surface of the substrate 430 formed by the second build-up layer 437. Bumps 420 include contact areas (e.g., pads) of IC 410 and solder balls for connecting the contact areas to corresponding contact areas (e.g., pads) of substrate 430. The IC 410 may be placed onto the surface of the substrate 430 such that the bumps 420 are over corresponding contact areas on the surface of the substrate 430. The bumps 420 may then be heated and cooled to form a bond between the contact areas of the IC 410 and their corresponding contact areas of the surface of the substrate 430.

Similar to the IC package 300 of fig. 3, the IC package formed using the process 400 results in a flip chip package with a deep trench capacitor 470, the deep trench capacitor 470 attached to the IC 410 and embedded in the cavity 434 of the package substrate. Solder balls may also be formed on the BGA balls 460 on the bottom surface of the substrate 430.

Fig. 5 is a cross-sectional view of another example IC package 500, the IC package 500 including an IC510 and a deep trench capacitor 570 embedded in a substrate 530 of the IC package 500. The IC package 500 is similar to the IC package 100 of fig. 1, except that the deep trench capacitors 570 are embedded on opposite sides of the substrate. In this example, deep trench capacitor 570 is embedded in cavity 534, the cavity 534 being formed on the same side of substrate 530 as the interconnect pads of BGA balls 560. As noted above, this configuration may be preferred when larger (e.g., higher) capacitors and higher capacitances are needed or desired for lower Bandwidth (BW) requirements.

The IC package 500 includes: a substrate 530; an IC510, the IC510 being mounted on a substrate 530; and BGA balls 560, the BGA balls 560 including interconnect pads with solder balls for connecting the IC package 500 to a PCB. The IC510 may be an ASIC or other suitable type of IC.

In this example, IC package 500 is a flip chip package in which bumps 520 (e.g., C4 bumps) are used to connect interconnect pads of IC510 to substrate 530. The solder bumps 520 include contact areas (e.g., pads) of the IC510 and solder balls for connecting the contact areas to corresponding contact areas (e.g., pads) of the substrate 530. Although not shown in fig. 5, substrate 530 may include vias that connect the contact areas of IC510 to the interconnect pads of BGA balls 560.

Similar to the base plate 130 of fig. 1, the base plate 530 includes a base plate core 532 and base plate stacks 531 and 533 on both sides of the base plate core 532. For example, one or both of the substrate stacks 531 and 533 may be added to the substrate core 532 when manufacturing the IC package 500. In some embodiments, substrate 530 includes only one or none of substrate stacks 531 or 533. For example, the substrate 530 may include a substrate stack 531 or 533 only on the side of the substrate core 532 that will include the cavity for the deep trench capacitor.

The substrate 530 includes a cavity 534 for a deep trench capacitor 570. The cavity 534 is formed in a substrate stack 533 on the bottom side of the substrate 530. The cavity 534 may be formed by etching away a portion of the substrate stack 533. The cavity 534 may be sized to fit the deep trench capacitor 570. For example, the distance that capacitor 570 can extend from the bottom surface of substrate 530 may be limited based on BGA balls 560 and the PCB on which IC package 500 is to be mounted. The cavity 534 may have a depth that may prevent the deep trench capacitor 570 from extending out of the cavity 534 and beyond the bottom surface of the substrate 530, or the depth may be such that the deep trench capacitor 570 does not extend beyond what is allowed by the BGA balls 560 and PCB requirements.

The deep trench capacitor 570 can be the same as or similar to the deep trench capacitor 170 of figure 1. The substrate 530 may include vias that connect the deep trench capacitors 570 to conductive pads on the top surface of the substrate 530 that are connected to contact regions of the IC 510. To reduce the length of such vias, the cavity and deep trench capacitors 570 may be located below (e.g., directly below) the core power distribution circuitry 521 of the IC510, which distributes power to the core or other circuitry of the IC 510. In this way, the additional inductance caused by the vias is reduced, resulting in less high frequency di/dt noise and less corresponding voltage loss. However, since it allows for a larger capacitance, it can account for lower frequency di/dt noise and corresponding voltage losses.

Each of the IC packages described above may include multiple cavities, for example, to embed more capacitors and to cancel out more package inductance. In other cases, a single cavity may be used to embed the deep trench capacitor. Some example arrangements of cavities that may be formed in a substrate and used in the IC packages described above are shown in fig. 6-8.

Fig. 6 is a diagram of an example arrangement 600 of cavities 630 for deep trench capacitors. In this example, the cavity 630 is centered on the surface of the substrate 610. The cavity 630 may be formed on the side of the substrate on which the IC is mounted, or on the side of the substrate that is connected to another component (e.g., to a PCB). The cavity 630 is also located directly below the core power distribution circuit area 620 (or other circuit area to be decoupled) of the IC. The cavity 630 may include one or more deep trench capacitors.

Fig. 7 is a diagram of an example arrangement 700 of cavities 730A-730C for a deep trench capacitor. In this example, there are three cavities 730A-730C near the center of the surface of the substrate 710. However, other numbers of chambers may be used.

The cavities 730A-730C may be formed on a side of the substrate on which the ICs are mounted, or on a side of the substrate that is connected to another component (e.g., to a PCB). The cavities 730A-730C are also located directly below the core power distribution circuit area 720 (or other circuit area to be decoupled) of the IC. Each cavity 730A-730C can include one or more deep trench capacitors.

Fig. 8 is a diagram of another example arrangement 800 of cavities for a deep trench capacitor. In this example, there are six cavities 830A-830F near the center of the surface of the substrate 810. However, other numbers of chambers may be used.

The cavities 830A-830F may be formed on a side of the substrate on which the ICs are mounted, or on a side of the substrate that is connected to another component (e.g., to a PCB). The cavities 830A-830C are also located directly below the core power distribution circuit area 820 (or other circuit area to be decoupled) of the IC. Each cavity 830A-830C may include one or more deep trench capacitors.

While this specification contains many specific implementation details, these should not be construed as limitations on the scope of any inventions or of what may be claimed, but rather as descriptions of features specific to particular embodiments of particular inventions. Certain features that are described in this specification in the context of separate embodiments can also be implemented in combination in a single embodiment. Conversely, various features that are described in the context of a single embodiment can also be implemented in multiple embodiments separately or in any suitable subcombination. Moreover, although features may be described above as acting in certain combinations and even initially claimed as such, one or more features from a claimed combination can in some cases be excised from the combination, and the claimed combination may be directed to a subcombination or variation of a subcombination.

Similarly, while operations are depicted in the drawings in a particular order, this should not be understood as requiring that such operations be performed in the particular order shown or in sequential order, or that all illustrated operations be performed, to achieve desirable results. In some cases, multitasking and parallel processing may be advantageous. Moreover, the separation of various system components in the embodiments described above should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product or packaged into multiple software products.

Thus, particular embodiments of the present subject matter have been described. Other embodiments are within the scope of the following claims. In some cases, the actions recited in the claims can be performed in a different order and still achieve desirable results. In addition, the processes depicted in the accompanying figures do not necessarily require the particular order shown, or sequential order, to achieve desirable results. In certain embodiments, multitasking and parallel processing may be advantageous.