阅读说明：本技术 半导体装置 (Semiconductor device with a plurality of semiconductor chips ) 是由 大宅大介 林田幸昌 本宫哲男 于 2018-08-08 设计创作，主要内容包括：特征在于,具有：第1电极；第2电极；树脂壳体,其包围该第1电极和该第2电极；以及树脂绝缘部,其在该树脂壳体的内侧覆盖该第1电极的一部分和该第2电极的一部分,该树脂绝缘部的材料与该树脂壳体相同。该树脂绝缘部与该树脂壳体的内壁接触或与该树脂壳体的内壁分离。通过在该树脂绝缘部形成有位于该第1电极和该第2电极之间的槽,从而对该第1电极和该第2电极之间提供了没有该树脂绝缘部的空间或与该树脂绝缘部不同的物质。(Characterized in that it comprises: a 1 st electrode; a 2 nd electrode; a resin case surrounding the 1 st electrode and the 2 nd electrode; and a resin insulation part covering a portion of the 1 st electrode and a portion of the 2 nd electrode inside the resin case, the resin insulation part being made of the same material as the resin case. The resin insulation part is in contact with or separated from the inner wall of the resin case. A groove between the 1 st electrode and the 2 nd electrode is formed in the resin insulation part, so that a space without the resin insulation part or a substance different from the resin insulation part is provided between the 1 st electrode and the 2 nd electrode.)

1. A semiconductor device is characterized by comprising:

a 1 st electrode;

a 2 nd electrode;

a resin case surrounding the 1 st electrode and the 2 nd electrode; and

a resin insulating part covering a part of the 1 st electrode and a part of the 2 nd electrode inside the resin case, the resin insulating part being made of the same material as the resin case,

a groove is formed between the 1 st electrode and the 2 nd electrode in the resin insulating portion.

2. The semiconductor device according to claim 1,

the resin insulation part is in contact with an inner wall of the resin case.

3. The semiconductor device according to claim 1 or 2,

the groove is disposed at a portion where the 1 st electrode and the 2 nd electrode are closest.

4. The semiconductor device according to any one of claims 1 to 3,

the depth of the groove is greater than or equal to the embedded depth of the 1 st electrode or the 2 nd electrode from the position of the groove with the open end.

5. The semiconductor device according to any one of claims 1 to 4,

the 1 st electrode is a collector electrode, and the 2 nd electrode is an emitter electrode.

6. The semiconductor device according to any one of claims 1 to 5,

the groove is formed in plurality.

7. The semiconductor device according to any one of claims 1 to 6,

an insulator having an organic material disposed in the trench.

8. The semiconductor device according to any one of claims 1 to 6,

a solid insulator having an inorganic material disposed in the slot.

9. The semiconductor device according to any one of claims 1 to 6,

the slot is supplied with an insulating gas having a higher insulation than air.

10. The semiconductor device according to any one of claims 1 to 9,

has a semiconductor chip provided in the resin case.

11. The semiconductor device according to claim 10,

the semiconductor chip is formed of a wide bandgap semiconductor.

12. The semiconductor device according to claim 11,

the wide band gap semiconductor is silicon carbide, gallium nitride material or diamond.

Technical Field

The present invention relates to a semiconductor device used for controlling a motor of an electric railway facility, an electric power facility, or an automobile facility, for example.

Background

Patent document 1 discloses a semiconductor device in which a reduction in the amount of a packaging resin filled in a package is achieved and a sufficient insulation resistance is secured between end frames of main terminals. Patent document 1 discloses that a groove is formed in an inner wall surface of a resin housing in order to increase an insulation creepage distance of 2 main terminals.

Patent document 1: japanese laid-open patent publication No. 10-41460

Disclosure of Invention

In order to avoid an increase in size of the apparatus and to insulate 2 electrodes, a material having a higher insulation capacity than air may be provided between the electrodes. For example, when a resin case is provided between the electrodes to insulate the electrodes, there is a possibility that the insulating performance may be deteriorated due to the presence of air bubbles or metal foreign matter in the resin case. The distance between the electrodes is increased in order to ensure insulation of the electrodes covered with the resin case. In this case, it is difficult to miniaturize the semiconductor device because the size of the housing cannot be increased. In particular, in a high-voltage semiconductor module intended to be used under a high voltage, if the distance between electrodes is not increased, insulation between the electrodes cannot be secured.

The present invention has been made to solve the above-described problems, and an object thereof is to provide a semiconductor device which ensures insulation between electrodes and is suitable for miniaturization.

The semiconductor device according to the present invention is characterized by comprising: a 1 st electrode; a 2 nd electrode; a resin case surrounding the 1 st electrode and the 2 nd electrode; and a resin insulating part covering a part of the 1 st electrode and a part of the 2 nd electrode inside the resin case, the resin insulating part being made of the same material as the resin case, and a groove being formed in the resin insulating part between the 1 st electrode and the 2 nd electrode.

Other features of the invention will be set forth below.

ADVANTAGEOUS EFFECTS OF INVENTION

According to the present invention, it is possible to provide a semiconductor device suitable for miniaturization while ensuring insulation between electrodes by providing a groove in a resin insulating portion covering the electrodes inside a resin case.

Drawings

Fig. 1 is a plan view of a semiconductor device according to embodiment 1.

Fig. 2 is a bottom view of the semiconductor device of fig. 1.

Fig. 3 is an enlarged perspective view of a part of fig. 2.

Fig. 4 is a sectional view of an electrode covered with a resin insulating portion.

Fig. 5 is a partial cross-sectional view of a semiconductor device according to embodiment 2.

Fig. 6 is a partial cross-sectional view of a semiconductor device according to embodiment 3.

Fig. 7 is a partial cross-sectional view of a semiconductor device according to a modification.

Fig. 8 is a partial cross-sectional view of a semiconductor device according to embodiment 4.

Fig. 9 is a partial cross-sectional view of a semiconductor device according to a modification.

Fig. 10 is a partial cross-sectional view of a semiconductor device according to embodiment 5.

Fig. 11 is a cross-sectional view of a semiconductor device according to a comparative example.

Detailed Description

A semiconductor device according to an embodiment will be described with reference to the drawings. The same or corresponding components are denoted by the same reference numerals, and redundant description may be omitted.

Embodiment 1.

Fig. 1 is a plan view of a semiconductor device according to embodiment 1. The semiconductor device has a resin case 10. The material of the resin case 10 is, for example, PPS (polyphenylene sulfide resin), a mixture of PET (polyethylene terephthalate) and PBT (polybutylene terephthalate), or engineering plastic such as PBT or nylon. The cover of the resin case 10 can be made of the same material as the resin case 10.

Resin insulation portions 11A, 11B, 11C, 11D, 11E, 11F, and 11G are provided inside the resin case 10. Resin insulation portions 11A, 11B, 11C, 11D, 11E, 11F, and 11G may be made of the same material as resin case 10. The resin insulation portions 11A, 11B, 11C, 11D, 11E, 11F, 11G are in contact with the inner wall of the resin case 10. At least 1 of the resin insulation portions 11A, 11B, 11C, 11D, 11E, 11F, and 11G may be separated from the inner wall of the resin case 10. The resin insulating portions 11A, 11B, 11C, 11D, 11E, 11F, and 11G cover at least a part of the electrodes mainly for ensuring insulation between the different electrodes.

The resin case 10 has a 1 st electrode 12 and a 2 nd electrode 14 surrounded by the resin case 10. The 1 st electrode 12 and the 2 nd electrode 14 can be various electrodes having different functions. For example, the 1 st electrode 12 is a collector (electrode) electrode, and the 2 nd electrode 14 is an emitter electrode. The 1 st electrode 12 has a wide portion 12a and a narrow portion 12b having a smaller width than the wide portion 12 a. In fig. 1, 2 and 3, the broken lines indicate electrodes covered with resin insulating portions. In fig. 1, the resin insulation portion 11A is shown covering a part of the 1 st electrode 12 and a part of the 2 nd electrode 14. More specifically, the 1 st electrode 12 is partially covered with the resin insulation portion 11A, and the 2 nd electrode 14 is partially covered with the resin insulation portion 11A. For example, electrodes different from the 1 st electrode 12 and the 2 nd electrode 14, such as a control electrode and a ground electrode to which a gate voltage of the switching element is applied, can be provided in the resin case 10. Examples of the material of the electrodes include metals such as SUS, Cu, and Al.

For example, the various electrodes can be mounted on the resin insulating portion by insert molding or insert molding. In the case of insert molding or external insert molding, the resin case 10 and the resin insulating portions 11A, 11B, 11C, 11D, 11E, 11F, and 11G can be formed at the same time.

Fig. 2 is a bottom view of the semiconductor device of fig. 1. The resin insulation portion 11A has a 1 st portion 11A covering a part of the 1 st electrode 12, a 2 nd portion 11b covering a part of the 2 nd electrode 14, and a groove 11c provided between the 1 st portion 11A and the 2 nd portion 11 b. A space is provided between the 1 st electrode 12 and the 2 nd electrode 14 through the groove 11 c. More specifically, the 1 st electrode 12 and the 2 nd electrode 14 have not only the resin insulation portion 11A but also the 1 st portion 11A, the 2 nd portion 11b, and a space therebetween.

The resin insulation portion 11B has a 1 st portion 11d covering a part of the 1 st electrode 12, a 2 nd portion 11e covering a part of the 2 nd electrode 14, and a groove 11f provided between the 1 st portion 11d and the 2 nd portion 11 e. A space is provided between the 1 st electrode 12 and the 2 nd electrode 14 through the groove 11 f. More specifically, the 1 st electrode 12 and the 2 nd electrode 14 have not only the resin insulation portion 11B but also the 1 st portion 11d, the 2 nd portion 11e, and a space therebetween.

Fig. 3 is an enlarged perspective view of a part of fig. 2. The 2 nd electrode 14 is formed in an L shape at a portion covered with the 2 nd portion 11b, and a groove 11c is formed along the shape of the 2 nd electrode 14. As a result, the groove 11c has an L-shape in plan view. The lower left portion of fig. 3 shows that the 1 st electrode 12 branches in the upward, downward, and left directions. Such a branch portion is covered with the 1 st portion 11d of the resin insulation portion 11B.

Fig. 4 is a sectional view of the resin insulation portion 11A and the electrode covered with the resin insulation portion 11A. The depth of the groove 11c is L1. The depth of embedding of the 1 st electrode 12 or the 2 nd electrode 14 from the position where the open end of the groove 11c exists is L2. Depth L1 is greater than or equal to depth L2. The difference Δ L between the depth L1 and the depth L2 is shown in fig. 4. In this way, providing the sufficiently deep groove 11c helps ensure insulation between the 1 st electrode 12 and the 2 nd electrode 14 covered with the resin insulation portion 11A.

Fig. 11 is a cross-sectional view of a semiconductor device according to a comparative example. In fig. 11, only the resin 100 is shown between the 1 st electrode 12 and the 2 nd electrode 14. In this case, if the bubbles 50a or the metal foreign matter 50b are present in the resin 100, the insulation tolerance between the electrodes is lowered, and the insulation between the electrodes cannot be secured.

In contrast, according to the semiconductor device of embodiment 1, the groove 11c between the 1 st electrode 12 and the 2 nd electrode 14 is formed in the resin insulating portion 11A, so that the 1 st portion 11A covering a part of the 1 st electrode 12 and the 2 nd portion 11b covering a part of the 2 nd electrode 14 are separated by a space. Therefore, even if bubbles or metallic foreign matter exists in the 1 st part 11a or the 2 nd part 11b, insulation of the 1 st electrode 12 and the 2 nd electrode can be maintained. By providing the groove 11c, it is not necessary to increase the distance between the 1 st electrode 12 and the 2 nd electrode in order to improve the insulation resistance. Therefore, the distance between the electrodes can be shortened while ensuring insulation between the electrodes. Such a feature contributes to miniaturization of a high-voltage semiconductor module product, for example.

The resin insulating portion 11B having the groove 11f also provides the same effect. Which resin insulation portion the groove should be formed in is arbitrary. The grooves may be formed in all of the resin insulation portions, or may be formed only in a specific resin insulation portion. For example, whether or not a groove is required can be determined according to the proximity between the electrodes. That is, the groove may be provided in the resin insulating portion in a portion where the electrodes are close to each other, and the groove in the resin insulating portion may be omitted in a portion where the electrodes are not close to each other. In the example of fig. 2, a groove 11c is provided in the resin insulating portion 11A that provides insulation between the 1 st electrode 12 and the 2 nd electrode 14. When it is determined that the 1 st electrode 12 and the 2 nd electrode 14 are not close to each other at the portion having the resin insulation portion 11B, the groove 11f may be omitted. The arrangement of the electrodes and the arrangement of the resin insulating portions shown in the drawings are examples, and grooves corresponding to various electrode arrangements can be provided.

The modification mentioned in embodiment 1 can also be applied to the semiconductor device according to the following embodiment. Since the semiconductor device according to the following embodiment is similar to the semiconductor device of embodiment 1 in many respects, differences from embodiment 1 will be mainly described.

Embodiment 2.

Fig. 5 is a partial cross-sectional view of a semiconductor device according to embodiment 2. 2 grooves 11c are formed between the 1 st electrode 12 and the 2 nd electrode 14 of the resin insulating portion 11A. A plurality of grooves 11c of 3 or more may be formed. By providing a projection 11p between the 1 st part 11a and the 2 nd part 11b, 2 grooves 11c are provided. The boss 11p can be formed of the same material as the resin case 10. By providing the lower end of the projection 11p below the lower ends of the 1 st electrode 12 and the 2 nd electrode 14, the insulation between the electrodes can be improved. The lower end of the boss 11p is shown in fig. 5 to be located at a lower position by a distance L3 than the lower ends of the 1 st electrode 12 and the 2 nd electrode 14. Further, a projection can be provided in a groove other than the groove 11 c.

Embodiment 3.

Fig. 6 is a partial cross-sectional view of a semiconductor device according to embodiment 3. In this semiconductor device, the groove 11c has an insulator 30 having a higher dielectric breakdown voltage than air in order to improve the insulation performance between the electrodes. The insulator 30 may be an organic material or an insulating gas, for example. The organic material is, for example, silicone-based gel, epoxy-based resin material, polymer resin, gel, or rubber. The insulating gas is, for example, freon or SF6 gas. It is also possible to provide the grooves other than the groove 11c with an insulator having higher insulation than air.

Fig. 7 is a partial cross-sectional view of a semiconductor device according to a modification. As shown in fig. 7, the insulator 30 may also be provided to the plurality of grooves 11c provided by the boss 11 p.

Embodiment 4.

Fig. 8 is a partial cross-sectional view of a semiconductor device according to embodiment 4. A solid insulator 40 of an inorganic material is provided in the groove 11 c. The insulator 40 is, for example, ceramic. By providing the insulator 40, the insulation between the electrodes can be improved. Fig. 9 is a partial cross-sectional view of a semiconductor device according to a modification. As shown in fig. 9, the insulator 40 may also be provided to the plurality of grooves 11c provided by the boss 11 p.

Embodiment 5.

Fig. 10 is a partial cross-sectional view of a semiconductor device according to embodiment 5. In embodiment 5, the internal structure of a semiconductor device will be mainly described. This internal structure can be used in all the structures described in embodiments 1 to 4. That is, the semiconductor chip described in embodiment 5 can be incorporated into the structure having the electrode, the resin case, and the resin insulating portion described in embodiments 1 to 4.

Fig. 10 shows the 2 nd electrode 14 inserted into the resin case 10. An insulating material 62 is provided in the resin case 10. The insulating material 62 is aluminum nitride(AlN), silicon nitride (SiN), aluminum oxide (Al)₂O₃) And the like, ceramics, polymer resins, and the like. Metal patterns 60a and 60b are formed on the upper surface of the insulating material 62, and a metal pattern 60c is formed on the lower surface of the insulating material 62. The 2 nd electrode 14 is fixed to the metal pattern 60 b.

In the resin case 10, the semiconductor chip 64 is fixed to the metal pattern 60 a. The semiconductor chip 64 is, for example, an igbt (insulated Gate Bipolar transistor) or a diode made of Si. A wide bandgap semiconductor can be used as the material of the semiconductor chip 64. The wide band gap semiconductor is silicon carbide, gallium nitride based material or diamond. For example, the semiconductor chip 64 can be a SiC-MOSFET or a SiC-SBD (Schottky barrier diode). The metal pattern 60b is electrically connected to the surface electrode of the semiconductor chip 64 by a bonding wire 66 or the like.

In the case of using a semiconductor chip using a wide band gap semiconductor to which a high voltage and a large current are applied, a package having the resin case 10 and a resin insulating portion tends to be large in order to secure an insulation distance with respect to an electrode inside the resin case 10. That is, it is difficult to achieve miniaturization matching with the performance of wide bandgap semiconductors due to limitations in packaging. However, by adopting the structure for improving the insulating performance between the electrodes described in embodiments 1 to 4, it is possible to achieve both the miniaturization of the package and the use of the semiconductor chip using the wide band gap semiconductor. Since high-temperature operation and high-speed operation can be realized by using a wide band gap semiconductor, a cooler and a control circuit around a module can be downsized.

Description of the reference numerals

10 resin case, 11A, 11B, 11C, 11D, 11E, 11F, 11G resin insulation, 11C, 11F groove, 30, 40 insulator.