阅读说明：本技术 包括金属粘附和阻挡结构的半导体器件及其形成方法 (Semiconductor device including metal adhesion and barrier structures and method of forming the same ) 是由 R·K·乔施 F·希勒 M·福格 O·亨贝尔 T·拉斯卡 M·米勒 R·罗思 C·沙菲 于 2017-03-14 设计创作，主要内容包括：公开了包括金属粘附和阻挡结构的半导体器件及其形成方法。半导体器件的实施例包括电连接至半导体本体的金属结构。金属粘附和阻挡结构位于金属结构与半导体本体之间。金属粘附和阻挡结构包括包含钛和钨的层、以及在包含钛和钨的层上的包含钛、钨和氮的层。(Semiconductor devices including metal adhesion and barrier structures and methods of forming the same are disclosed. Embodiments of a semiconductor device include a metal structure electrically connected to a semiconductor body. The metal adhesion and barrier structure is located between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten, and a layer comprising titanium, tungsten, and nitrogen over the layer comprising titanium and tungsten.)

1. A semiconductor device (100, 200, 300) comprising:

a silicon carbide semiconductor body (106, 206, 306);

a metal structure (105, 205, 305) electrically connected to the silicon carbide semiconductor body (106, 206, 306);

a metal adhesion and barrier structure (107, 207, 307) between the metal structure (105, 205, 305) and the silicon carbide semiconductor body (106, 206, 306),

wherein the metal adhesion and barrier structure (107, 207, 307) comprises:

a layer comprising a layer of aluminium,

a layer comprising titanium, tungsten, and nitrogen over the layer comprising aluminum; and

a tungsten layer over the layer comprising titanium, tungsten and nitrogen.

2. The semiconductor device (100, 200, 300) of claim 1, wherein the metal adhesion and barrier structure (107, 207, 307) further comprises:

a layer comprising titanium over the layer comprising aluminum; and

a layer comprising titanium and nitrogen over the layer comprising titanium.

3. The semiconductor device (100, 200, 300) of claim 2,

wherein the layer comprising titanium is a Ti layer, and

wherein the layer comprising titanium and nitrogen is a TiN layer.

4. The semiconductor device (100, 200, 300) of claim 1 or 2, wherein the metal adhesion and barrier structure (107, 207, 307) further comprises:

a layer comprising titanium and tungsten between the layer comprising aluminum and the layer comprising titanium, tungsten and nitrogen.

5. The semiconductor device (100, 200, 300) of claim 4, wherein the layer comprising titanium and tungsten is a TiW layer.

6. A semiconductor device (100, 200, 300) according to claim 1 or 2, wherein the layer comprising aluminum is in ohmic contact with the silicon carbide semiconductor body.

7. The semiconductor device (100, 200, 300) of claim 1 or 2, wherein the metal structure (105, 205, 305) comprises a copper layer over the metal adhesion and barrier structure (107, 207, 307).

8. The semiconductor device (100, 200, 300) of claim 7, wherein the copper layer has a thickness greater than 4 μ ι η.

9. The semiconductor device (100, 200, 300) of claim 7, wherein the copper layer is in direct contact with the metal adhesion and barrier structure (107, 207, 307).

10. The semiconductor device (100, 200, 300) of claim 1 or 2, wherein the metal adhesion and barrier structure comprises a Ti/TiN layer stack.

11. The semiconductor device (100, 200, 300) according to claim 1 or 2, wherein the atomic percentage at.% of nitrogen in the layer comprising titanium, tungsten and nitrogen is in the range of 1% to 50%.

12. A semiconductor device (100, 200, 300) comprising:

a metal structure (105, 205, 305) electrically connected to the semiconductor body (106, 206, 306);

a metal adhesion and barrier structure (107, 207, 307) located between the metal structure (105, 205, 305) and the semiconductor body (106, 206, 306), wherein the metal adhesion and barrier structure (107, 207, 307) comprises: a layer comprising titanium and tungsten, a layer comprising titanium, tungsten and nitrogen on the layer comprising titanium and tungsten, and a tungsten layer on the layer comprising titanium, tungsten and nitrogen, wherein the metal structure (105, 205, 305) comprises a copper layer in direct contact with the metal adhesion and barrier structure (107, 207, 307), the copper layer having a thickness of more than 4 μm.

13. The semiconductor device (100, 200, 300) of claim 12, further comprising at least one more metal layer on the copper layer.

14. The semiconductor device (100, 200, 300) according to claim 12 or 13, wherein the atomic percentage at.% of nitrogen in the layer comprising titanium, tungsten and nitrogen is in the range of 1% to 50%.

15. A semiconductor device (100, 200, 300) comprising:

a metal structure electrically connected to the semiconductor body;

a metal adhesion and barrier structure between the metal structure and the semiconductor body, wherein the metal adhesion and barrier structure comprises: a layer comprising Al and Cu, a layer comprising Ti and a layer comprising TiN, the layer comprising Al and Cu being in contact with the semiconductor body (106, 206, 306).

16. The semiconductor device (100, 200, 300) of claim 15, wherein the layer comprising Al and Cu further comprises Si.

17. The semiconductor device (100, 200, 300) according to claim 15, wherein the thickness of the layer comprising TiN is in the range of 5nm to 150 nm.

18. The semiconductor device (100, 200, 300) of claim 15, wherein the thickness of the layer comprising Ti is in the range of 1nm to 150 nm.

19. The semiconductor device (100, 200, 300) of claim 15, wherein the metal structure (105, 205, 305) comprises a copper layer in direct contact with the metal adhesion and barrier structure (107, 207, 307), the copper layer having a thickness greater than 4 μ ι η.

20. The semiconductor device (100, 200, 300) of claim 19, further comprising at least one more metal layer on the copper layer.

Technical Field

The present disclosure relates to semiconductor devices including metal adhesion and barrier structures and methods of forming semiconductor devices.

Background

Metallization is a key element in semiconductor technology. The metallization is responsible for the transfer of current inside and outside the semiconductor chip and the removal of heat generated during operation of the semiconductor chip. The purpose of the metal adhesion and barrier structure is to provide adhesion between the metallization and a support structure, such as a semiconductor body, and to prevent diffusion of metal atoms from the metal structure into the semiconductor substrate. It is desirable to improve the reliability of barrier and adhesion characteristics over a desired time span, reduce damage to barrier characteristics due to defects and particles, and improve the ability to shield barrier defects.

Disclosure of Invention

This object is achieved by the subject matter of the independent claims. The dependent claims relate to further embodiments.

The present disclosure relates to a semiconductor device. The semiconductor device includes a metal structure electrically connected to a semiconductor body. The semiconductor device further includes a metal adhesion and barrier structure between the metal structure and the semiconductor body. The metal adhesion and barrier structure includes a layer comprising titanium and tungsten, and a layer comprising titanium, tungsten, and nitrogen over the layer comprising titanium and tungsten.

The present disclosure also relates to a semiconductor device comprising a metal structure electrically connected to a semiconductor body. The semiconductor device further includes a metal adhesion and barrier structure between the metal structure and the semiconductor body, wherein the metal adhesion and barrier structure includes a layer including aluminum, and Ti/TiN on the layer including aluminum.

The present disclosure also relates to a method of manufacturing a semiconductor device. The method includes forming a metal adhesion and barrier structure on a semiconductor body. The method also includes forming a metal structure on the metal adhesion and barrier structure. The forming of the metal adhesion and barrier structure includes forming a layer comprising titanium and tungsten, and forming a layer comprising titanium, tungsten, and nitrogen over the layer comprising titanium and tungsten.

Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings.

Drawings

The accompanying drawings are included to provide a further understanding of the invention, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of the invention and together with the description serve to explain the principles of the invention. Other embodiments and intended advantages of the invention will be readily appreciated as they become better understood by reference to the following detailed description.

Fig. 1 is a schematic cross-sectional view of an embodiment of a portion of a semiconductor device including a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body.

Fig. 2 is a schematic cross-sectional view of another embodiment of a portion of a semiconductor device including a metal structure electrically connected to a semiconductor body and a metal adhesion and barrier structure between the metal structure and the semiconductor body.

Fig. 3 is a schematic cross-sectional view of a further embodiment of a portion of a semiconductor device comprising a metal structure electrically connected with a low p-doped semiconductor region of a semiconductor body.

Fig. 4 is a schematic flowchart for illustrating a method of manufacturing a semiconductor device.

Fig. 5 is a schematic cross-sectional view for illustrating a metal adhesion and barrier structure on a semiconductor body based on reliability improvement of defect shielding.

Detailed Description

In the following detailed description, reference is made to the accompanying drawings, which form a part hereof, and in which is shown by way of illustration specific embodiments in which the disclosure may be practiced. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present invention. For example, features illustrated or described with respect to one embodiment can be used on or in conjunction with other embodiments to yield yet a further embodiment. The present disclosure is intended to encompass such modifications and variations. The use of specific language to describe examples should not be construed as limiting the scope of the appended claims. The figures are not drawn to scale and are for illustrative purposes only. For clarity, identical elements are denoted by corresponding reference numerals in different figures, if not otherwise specified.

The terms "having," "containing," "including," "containing," and the like are open-ended and such terms indicate the presence of stated structures, elements, or features, but do not preclude the presence of additional elements or features. The articles "a," "an," and "the" are intended to include the plural as well as the singular, unless the context clearly indicates otherwise.

The term "electrical connection" describes a permanent low-ohmic connection between electrically connected elements, for example a direct contact between the relevant elements or a low-ohmic connection via a metal and/or a highly doped semiconductor. The term "electrically coupled" includes that one or more intermediate elements suitable for signal transmission may be present between the electrically coupled elements, for example elements that temporarily provide a low ohmic connection in a first state and a high ohmic electrical decoupling in a second state.

The figures show the relative doping concentrations by indicating "-" or "+" next to the doping type "n" or "p". For example, "n-" means a doping concentration lower than that of the "n" doped region, while the "n +" doped region has a higher doping concentration than the "n" doped region. Doped regions of the same relative doping concentration do not necessarily have the same absolute doping concentration. For example, two different "n" doped regions may have the same or different absolute doping concentrations.

The terms "wafer," "substrate," "semiconductor body," or "semiconductor substrate" used in the following description may include any semiconductor-based structure having a semiconductor surface. Wafers and structures should be understood to include silicon (Si), silicon-on-insulator (SOI), silicon-on-sapphire (SOS), doped and undoped semiconductors, epitaxial layers of silicon supported by a base semiconductor foundation, and other semiconductor structures. As a typical base material for the manufacture of various such semiconductor devices, silicon wafers grown by the Czochralski (CZ) method may be used, for example by the standard CZ method or by the magnetic CZ (mcz) method or by the continuous CZ (ccz) method. FZ (float zone) silicon wafers may also be used. The semiconductor need not be silicon-based. The semiconductor may also be silicon germanium (SiGe), germanium (Ge) or gallium arsenide (GaAs). According to other embodiments, silicon carbide (SiC) or gallium nitride (GaN) may form the semiconductor substrate material.

The term "horizontal" as used in this specification intends to describe an orientation substantially parallel to the first or major surface of the semiconductor substrate or body. This may be, for example, the surface of a wafer or semiconductor die.

The term "vertical" as used in this specification intends to describe an orientation arranged substantially perpendicular to the first surface, i.e. parallel to the normal direction of the first surface of the semiconductor substrate or body.

In this specification, the second surface of the semiconductor substrate or semiconductor body is considered to be formed by the lower or back surface, while the first surface is considered to be formed by the upper, front or main surface of the semiconductor substrate. Thus, the terms "above" and "below" as used in this specification describe the relative position of one structural feature with respect to another structural feature.

In this specification, embodiments are shown comprising p-and n-doped semiconductor regions. Alternatively, the semiconductor device may be formed to have an opposite doping relationship such that the illustrated p-doped region is n-doped and the illustrated n-doped region is p-doped.

The semiconductor device may have terminal contacts, such as contact pads (or electrodes) allowing electrical contact with an integrated circuit or a discrete semiconductor device comprised in the semiconductor body. The electrodes may include one or more electrode metal layers applied to the semiconductor material of the semiconductor chip. The electrode metal layer may be fabricated to have any desired geometry and any desired material composition. The electrode metal layer may be in the form of a layer covering a certain area, for example. Any desired metal may be used as the material, such as Cu, Ni, Sn, Au, Ag, Pt, Pd, Al, Ti, and alloys of one or more of these metals. The electrode metal layer need not be uniform or made of only one material, that is, various compositions and concentrations of the materials contained in the electrode metal layer are possible. As an example, the size of the electrode layer may be large enough to bond with a wire.

In the embodiments disclosed herein, one or more conductive layers, in particular conductive layers, are applied. It should be understood that any such terms, such as "forming" or "applying," are intended to encompass all kinds and techniques of application layers. In particular, they are intended to cover techniques in which the layers are applied once as a whole (for example lamination techniques) and techniques in which the layers are deposited in a sequential manner (for example sputtering, plating, molding, CVD (chemical vapor deposition), Physical Vapor Deposition (PVD), evaporation, Hybrid Physical Chemical Vapor Deposition (HPCVD), etc.).

The applied conductive layer may in particular comprise one or more of the following: a metal layer such as Al, Cu or Sn or an alloy thereof, a conductive paste layer, and a bonding material layer. The metal layer may be a homogenous layer. The conductive paste may include metal particles distributed in a vaporizable or curable polymer material, where the paste may be fluid, viscous, or waxy. A bonding material may be applied to electrically and mechanically connect the semiconductor chip to, for example, a carrier or, for example, a contact clip. Soft solder materials or In particular solder materials capable of forming a diffusion solder bond may be used, for example solder materials comprising one or more of Sn, SnAg, SnAu, SnCu, In, InAg, InCu and InAu.

In the schematic cross-sectional view of the part of the semiconductor device 100 shown in fig. 1, the semiconductor device 100 comprises a metal structure 105 electrically connected to a semiconductor body 106. A metal adhesion and barrier structure 107 is located between the metal structure 105 and the semiconductor body 106.

The metal structure includes one or more sub-layers 1051,. The thickness of the metal structure 105 may be in the range of 3 μm to 100 μm or between 5 μm and 50 μm. For n-0, the metal structure 105 is composed of a single metal layer (e.g., a copper layer). For n >0, for example n ═ 1, 2, 3, or greater, the metal structure comprises a plurality of metal layers, i.e. is composed of a stack of metal layers.

The metal adhesion and barrier structure 107 includes two or more sub-layers 1071,. For m 1, the metal adhesion and barrier structure 107 is a dual metal adhesion and barrier stack. In some embodiments, metal adhesion and barrier structure 107 includes, for example, a layer comprising titanium and tungsten that implements layer 1071, and a layer comprising titanium, tungsten, and nitrogen on the layer comprising titanium and tungsten. The layer comprising titanium, tungsten and nitrogen allows stabilization of the entire metal adhesion and barrier structure 107. The layer comprising titanium, tungsten and nitrogen or another barrier layer on the layer comprising titanium and tungsten provides coverage of defects in the underlying layer (i.e., the layer comprising titanium and tungsten). Since defects in the layer comprising titanium, tungsten and nitrogen on the one hand or in the further barrier layer on the layer comprising titanium and tungsten and defects in the underlying layer (i.e. the layer comprising titanium and tungsten) on the other hand are unlikely to coincide with one another, the penetration of metal (e.g. copper) from the metal structure through the upper barrier layer (e.g. the layer comprising titanium, tungsten and nitrogen) into the semiconductor body can be prevented by the lower barrier layer (e.g. the layer comprising titanium and tungsten).

An optional intermediate layer may be sandwiched between any adjacent sublayers, such as between sublayers 1071 and 1072 of layer metal adhesion and barrier structure 107. The purpose of the intermediate layer is to prevent crystalline growth of the upper barrier layer on the lower barrier layer. Exemplary materials for the optional intermediate layer include metals (e.g., tungsten (W), titanium (Ti), tantalum (Ta), copper (Cu), silver (Ag)) and semiconductor materials (e.g., amorphous or polycrystalline silicon or carbon).

In some embodiments, the layer comprising titanium and tungsten is a layer of TiW having a thickness in the range of 30nm to 600nm, or between 50nm and 500nm, or between 100nm and 300 nm. In some embodiments, the thickness of the layer comprising titanium, tungsten and nitrogen is in the range of 30nm to 600nm or between 50nm and 500nm or between 100nm and 300 nm.

In some embodiments, the metal adhesion and barrier structure 107 further comprises a tungsten layer on the layer comprising titanium, tungsten and nitrogen. The formation of a tungsten layer is beneficial for wrapping defects in the underlying layer. The embedding of the particles may be improved by depositing tungsten, for example by Chemical Vapor Deposition (CVD) techniques or other layer deposition techniques. In some embodiments, the metal adhesion and barrier structure 107 further comprises a layer comprising titanium and tungsten over the layer comprising titanium, tungsten and nitrogen. In some embodiments, the metal adhesion and barrier structure 107 further comprises a tungsten layer on the layer comprising titanium, tungsten and nitrogen, and a layer comprising titanium and tungsten on the tungsten layer.

In some embodiments, the metal adhesion and barrier structure 107 further comprises a metal adhesion and barrier substructure between the semiconductor body 106 and the layer comprising titanium and tungsten, the metal adhesion and barrier substructure being in contact with the semiconductor body 106. The metal adhesion and barrier substructure may be realized by sublayers 1071, i...., 1071+ i, i ≧ 0, and the layer containing titanium and tungsten may correspond to sublayer 1071+ i + 1. In some embodiments, the metal adhesion and barrier substructure is made of one of TiW, TiN, Ti/TiN, TiN/Ta, or combinations thereof. The thickness of the metal adhesion and barrier substructure may be in the range of 30nm to 600nm or between 50nm and 500nm or between 100nm and 300 nm.

Similar to the above considerations, the sub-layer 1071+ i +1 provides coverage for defects in the underlying layer metal adhesion and barrier structure 107 (e.g., the sub-layer 1071+ i). Since defects in the sub-layer 1071+ i +1 and defects in the underlying layer (i.e., the sub-layer 1071+ i) are unlikely to coincide with each other, penetration of metal (e.g., copper) from the metal structure 105 through weak points of the upper barrier layer (e.g., the sub-layer 1071+ i +1) may be prevented by the lower barrier layer (e.g., the sub-layer 1071+ i or any other lower layer of the metal adhesion and barrier structure 107).

In the schematic cross-sectional view of the part of the semiconductor device 200 shown in fig. 2, the semiconductor device 200 comprises a metal structure 205 electrically connected to a semiconductor body 206. A metal adhesion and barrier structure 207 is arranged between the metal structure 205 and the semiconductor body 206.

The metal structure 205 includes one or more sub-layers 2051,. The thickness of the metal structure 205 may be in the range of 3 μm to 100 μm or between 5 μm and 50 μm. For p-0, the metal structure 105 is composed of a single metal layer (e.g., a copper layer). For p >0, for example p 1, 2, 3 or more, the metal structure comprises a plurality of metal layers, i.e. is composed of a stack of metal layers.

The metal adhesion and barrier structure 207 includes three or more sublayers 2071,. For q-2, the metal adhesion and barrier structure 207 is a triple metal adhesion and barrier layer stack. In some embodiments, the metal adhesion and barrier structure 207 includes a layer comprising aluminum, e.g., implemented as sublayer 2071, and a Ti/TiN layer, e.g., implemented as sublayers 2072, 2073, on the layer comprising aluminum.

In some embodiments, the metal adhesion and barrier structure 207 or metal adhesion barrier substructure described with respect to fig. 1 is made of AlSiCu/Ti/TiN, wherein AlSiCu is in contact with the semiconductor body 206.

In some other embodiments, the metal adhesion and barrier structures 207 or metal adhesion barrier sub-structures described with respect to fig. 1 are made of AlCu/Ti/TiN, wherein AlCu is in contact with the semiconductor body 206.

In some embodiments, the thickness of TiN in the metal adhesion and barrier structure 207 or metal adhesion barrier substructure described with respect to fig. 2 is in the range of 5nm to 150nm or between 10nm and 100 nm.

In some embodiments, the thickness of Ti in the metal adhesion and barrier structure 207 or metal adhesion barrier substructure described with respect to fig. 2 is in the range of 1nm to 150nm or in the range of 2nm to 100nm or in the range of 3nm to 50 nm.

In some embodiments, the metal structure 105, 205 comprises a copper layer in direct contact with the metal adhesion and barrier structure 107, 207, the copper layer having a thickness of more than 4 μm or more than 9 μm or even more than 19 μm. In some embodiments, at least one or more metal layers are formed on the copper layer.

In some embodiments, the atomic percent at.% of nitrogen in the layer comprising titanium, tungsten, and nitrogen is in the range of 1% to 50%.

The layer comprising aluminum allows for an improved contact property to the low-doped semiconductor regions (e.g. low-p-doped regions) of the semiconductor body. Spiking (spiking) in a silicon semiconductor body may be suppressed or at least reduced by adding silicon to the layer comprising aluminum. In addition, a TiN layer above or below the layer containing aluminum may serve as a barrier layer that prevents silicon from diffusing out of the layer containing aluminum, and thus spikes may be suppressed. Based on an appropriate thermal budget, the aluminum in the layer comprising aluminum may be locally doped with any lowly doped semiconductor body at the interface with the layer comprising aluminum to provide a suitable ohmic contact. Instead of AlSiCu as an example of a layer comprising aluminum, AlCu or Al may also be used as long as the thickness is kept at a low minimum, for example below 100nm or below 50nm or below 30nm or below 10nm or even below 5nm, to ensure local dissolution of silicon into AlCu and thus a suitable ohmic contact. If the thickness is kept at a low minimum, the spikes may not be detrimental to, for example, device performance.

The semiconductor device shown in FIG. 3In a schematic cross-sectional view of a portion of piece 300, an embodiment of a metal adhesion and barrier structure 305 on a low p-doped semiconductor region 310 is shown for achieving reliable contact on a low p-doped silicon region (e.g., an emitter region). Specific examples of the semiconductor device 300 include a diode (e.g., a freewheeling diode) and a transistor (e.g., an insulated gate field effect transistor (or IGFET) and a (reverse-conducting) insulated gate bipolar transistor (RC-IGBT or IGBT)). For example, the low p-doped semiconductor region 310 may be formed in or on an n-doped semiconductor substrate 311. The low p-doped semiconductor region 310 may be included at 10¹⁷To 10¹⁸cm^-3The doping concentration in the range of (1) is adjusted, for example, by boron ion implantation, the dose of which is 2X 10¹²cm^-2To 5X 10¹⁴cm^-2In the range of, for example, 6X 10¹²cm^-2The annealing temperature for boron ion implantation is in the range of 900 ℃ to 1250 ℃, e.g., 1150 ℃, and lasts for 100 minutes to 2000 minutes, e.g., 200 minutes. A portion of the metal adhesion and barrier structure 307 is in contact with the low p-doped semiconductor region 310, and an insulating layer 313 (e.g., a field dielectric, such as a field oxide structure or a local oxidation of silicon (LOCOS) structure) is sandwiched between the low p-doped semiconductor region 310 and another portion of the metal adhesion and barrier structure 307.

Ohmic contact to the low p-doped semiconductor region 310 is provided via a first metal barrier and adhesion sub-structure 3070, which first metal barrier and adhesion sub-structure 3070 may be implemented as described with respect to fig. 2 and comprises a layer comprising aluminum, e.g. AlSiCu or AlCu, in contact with the low p-doped semiconductor region 310. The reliability improvement of the metal adhesion and barrier structure 307 may be further improved by implementing the second metal barrier and adhesion sub-structure 3071 as described with reference to fig. 1, for example by a layer comprising titanium and tungsten, and a layer comprising titanium, tungsten and nitrogen on the layer comprising titanium and tungsten.

A metal structure 305 is formed on the metal adhesion and barrier structure 307 and is electrically connected to the low p-doped semiconductor region 310 via the metal adhesion and barrier structure 307. For example, the metal structure 305 may be implemented as the metal structures 105, 205 shown with reference to fig. 1 and 2.

In some embodiments, the semiconductor device 100, 200, 300 is a power semiconductor device for switching or rectifying a load current of more than 10mA (e.g., more than 100mA or 1A or 10A or 100A). The semiconductor device 100, 200, 300 may be a power semiconductor diode and/or may comprise a transistor cell. For example, the semiconductor device 100, 200, 300 may be or may comprise an IGFET (insulated gate field effect transistor), an IGBT (insulated gate bipolar transistor) or an MCD (MOS controlled diode), such as in general a MOSFET (metal oxide semiconductor FET), a smart FET comprising a FET with a metal gate and a transistor cell with a non-metal gate, a trench field plate FET, a super junction FET or an integrated power MOSFET, and a low voltage transistor cell, such as a logic and/or driver circuit in CMOS (complementary metal oxide semiconductor) technology.

Fig. 4 is a schematic flow chart diagram illustrating a method 400 of manufacturing a semiconductor device.

It will be appreciated that, although the method 400 is illustrated and described below as a series of acts or events, the illustrated ordering of such acts or events should not be construed as limiting. For example, some acts may occur in different orders and/or concurrently with other acts or events apart from those illustrated and/or described herein. Moreover, not all illustrated acts may be required to implement one or more aspects of embodiments of the disclosure herein. Further, one or more of the acts depicted herein may be performed in one or more separate acts and/or phases.

Processing feature S400 includes forming a metal adhesion and barrier structure on the semiconductor body.

Processing feature S410 includes forming a metal structure on the metal adhesion and barrier structure, wherein the forming of the metal adhesion and barrier layer includes forming a layer comprising titanium and tungsten, and forming a layer comprising titanium, tungsten, and nitrogen on the layer comprising titanium and tungsten.

Technical explanations, such as the details or examples of materials or technical benefits described above with reference to fig. 1, apply as well.

In some embodiments, forming the layer comprising titanium, tungsten, and nitrogen includes forming a layer comprising titanium and tungsten, and nitriding the layer comprising titanium and tungsten. During nitriding, a heat treatment or thermal process is performed to diffuse nitrogen into the surface of the metal to produce a hard-faced surface. As an example, the nitriding may be performed by gas nitriding. In gas nitriding, a nitrogen-rich gas, such as ammonia (NH3), is brought into contact with a heated metal adhesion and barrier structure and dissociated into nitrogen and hydrogen. The nitrogen gas then diffuses onto the surface of the metal adhesion and barrier structure, creating a nitride layer. As another example, nitridation may be performed by plasma nitridation (also referred to as ion nitridation, plasma ion nitridation, or glow discharge nitridation). In plasma nitridation, the reactivity of the nitriding medium is not due to temperature but to the gas ionization state. In this technique, a strong electric field is used to generate ionized molecules of gas around the surface to be nitrided. Another example of nitridation is reactive sputtering of TiWN. In this case, in a sputtering atmosphere, which typically ranges between 1% and 50%, in a sputtering atmosphere, N may be included, for example₂And Ar or Kr or Xe in a reactive gas.

In some embodiments, a surface cleaning process is performed prior to forming one or both of the layer comprising titanium and tungsten and the layer comprising titanium, tungsten and nitrogen. The surface cleaning process may comprise a process of removing contaminants, such as particles and metals and organics, from the surface of the semiconductor body and may be performed using liquid chemistry (wet cleaning) or gas (dry cleaning). During dry cleaning, contaminants are removed from the surface of the semiconductor body in the gas phase. This may be due to conversion of contaminants to volatile compounds by chemical reactions, removal from the surface by momentum transfer, or stripping during slight etching of the contaminated surface. During wet cleaning, contaminants are removed from the wafer surface in a liquid phase. Wet cleaning chemistries are selected to form soluble compounds of surface contaminants, which are typically enhanced by megasonic agitation. Typically, after the cleaning chemistry is applied, a deionized water rinse and dry cycle is performed.

In some embodiments, one or both of the layer comprising titanium and tungsten and the layer comprising titanium, tungsten, and nitrogen are formed by chemical vapor deposition. In another embodiment, another tungsten layer is disposed between the layer comprising titanium and tungsten and the layer comprising titanium, tungsten and nitrogen. Chemical vapor deposition allows shape-locking encapsulation of smaller particles of contaminants. Tungsten hexafluoride used in chemical vapor deposition processes to deposit tungsten metal decomposes in a hydrogen-containing environment into W and HF in the presence of larger particles, which allows defects (caused by HF) to propagate into the semiconductor body. Subsequent processes such as metal layer deposition (e.g., copper deposition) result in significant copper silicide particles, which can be detected as a failure in the acceptance check. Thus, larger particles can be excluded by electrical inspection methods. Chemical vapor deposition based on aggressive chemistries, such as decomposition of tungsten hexafluoride to HF, allow for improved reliability of barrier and adhesion properties.

In some embodiments, the uppermost portion of the metal adhesion and barrier structure (e.g., sublayer 1071+ m shown in fig. 1 or sublayer 2071+ q shown in fig. 2) and the lowermost portion of the metal structure (e.g., sublayer 1051 shown in fig. 1 or sublayer 2051 shown in fig. 2) are formed in the same process chamber without breaking the vacuum condition. Forming these layers in the same process chamber allows for inhibiting exposure of the uppermost portion of the metal adhesion and barrier structure to an oxygen-containing environment, which may otherwise result in an undesirable loss of adhesion strength between the uppermost portion of the metal adhesion and barrier structure and the lowermost portion of the metal structure.

In some embodiments, the metal structure comprises a copper layer. The copper layer may be formed on a thin copper seed layer. For example, a thin copper seed layer and adhesion layer may be formed in situ. The copper layer and the thin copper seed layer may be formed in the same processing chamber, for example, in a sputtering system (e.g., a magnetron sputtering system). The copper layer may also be formed in different processing equipment, for example in copper plating process equipment for providing a copper layer with a large thickness, for example a thickness of more than 5 μm or more than 10 μm or even more than 15 μm.

In the schematic cross-sectional view of the portion of the semiconductor device 500 shown in fig. 5, different defect cases in the metal adhesion and barrier structure 507 are shown. The metal adhesion and barrier structure 507 is illustrated as a three-layer stack of first through third sub-layers 5071, 5072, 5073. However, another number of stacked layers may be used, such as two, four, five, six, or even more layers. The details described with respect to the metal adhesion and barrier structures 107, 207 of fig. 1, 2 are equally applicable.

For example, the first defect 520, e.g., contaminants and/or particles at the level of the second sub-layer 5072, is covered by the third sub-layer 5073, which may be formed by a CVD process. The second defect 521, for example a contaminant and/or particles at the level of the first sub-layer 5071, is covered by the second sub-layer 5072, which may also be formed, for example, by a CVD process. Larger third defects 522 (e.g., wormholes) may extend through several of the first- third sub-layers 5071, 5072, 5073 and into the semiconductor body 506. Growth of the larger third defects 522 may be promoted by aggressive chemistries, such as by using tungsten hexafluoride in a tungsten CVD deposition, even during formation of the metal adhesion and barrier structure 507 to cause failure during acceptance inspection. Both measures thus allow to improve the reliability of the barrier and adhesion properties. In some embodiments, the third sublayer 5073 comprises or consists of a layer of TiW. In some embodiments, the second sub-layer 5072 comprises or consists of a tungsten layer, such as a tungsten layer formed by CVD. In some embodiments, the first sub-layer 5071 includes or consists of a TiW/TiWN stack.

Although specific embodiments have been illustrated and described herein, it will be appreciated by those of ordinary skill in the art that a variety of alternate and/or equivalent implementations may be substituted for the specific embodiments shown and described without departing from the scope of the present invention. This application is intended to cover any adaptations or variations of the specific embodiments discussed herein. Therefore, it is intended that this invention be limited only by the claims and the equivalents thereof.