阅读说明：本技术 一种形成氮化物半导体器件的工艺 (Process for forming nitride semiconductor device ) 是由 朱建峰 于 2019-09-19 设计创作，主要内容包括：本发明属于半导体器件加工技术领域,尤其为一种形成氮化物半导体器件的工艺,针对现有的氮化物半导体器件的抗静电能力弱,很容易因静电损耗氮化物半导体器件的特性的问题,现提出如下方案,该生产工艺包括以下步骤：S1：选择衬底和半导体器件的半导体堆叠体,半导体堆叠体依次在衬底上生长成沟道层和阻挡层；S2：对上述生长成的沟道层和阻挡层的顶部进行蚀刻,以便在沟道层和阻挡层的顶部形成凹槽。本发明设计合理,在沟道层、阻挡层和接触层的非接触位置均包裹了橡胶,有效的避免了电荷在氮化物半导体器件表面的流动,解决了氮化物半导体器件抗静电能力弱的问题,扩展了氮化物半导体器件的适用范围。(The invention belongs to the technical field of semiconductor device processing, in particular to a process for forming a nitride semiconductor device, which aims at the problems that the existing nitride semiconductor device has weak antistatic capability and is easy to lose the characteristics of the nitride semiconductor device due to static electricity, and the following scheme is proposed, wherein the production process comprises the following steps: s1: selecting a substrate and a semiconductor stacked body of a semiconductor device, wherein the semiconductor stacked body grows into a channel layer and a barrier layer on the substrate in sequence; s2: and etching the tops of the channel layer and the barrier layer so as to form grooves on the tops of the channel layer and the barrier layer. The nitride semiconductor device is reasonable in design, rubber is wrapped at non-contact positions of the channel layer, the barrier layer and the contact layer, so that the flow of charges on the surface of the nitride semiconductor device is effectively avoided, the problem of weak antistatic capacity of the nitride semiconductor device is solved, and the application range of the nitride semiconductor device is expanded.)

1. A process for forming a nitride semiconductor device, comprising the steps of:

s1: selecting a substrate and a semiconductor stacked body of a semiconductor device, wherein the semiconductor stacked body grows into a channel layer and a barrier layer on the substrate in sequence;

s2: etching the tops of the grown channel layer and the barrier layer so as to form a groove on the tops of the channel layer and the barrier layer;

s3: laying a mask on the inner wall of the bottom of the groove;

s4: immersing the mask, the channel layer and the barrier layer in an acid solution to carry out acid washing operation;

s5: growing a contact layer on the tops of the masks on the tops of the channel layer and the barrier layer by using nitrogen;

s6: removing residues remained on the mask by using an alkaline etchant;

s7: insulating rubber products are wrapped at the non-contact positions of the channel layer, the barrier layer and the contact layer;

s8: carrying out performance detection on strength and temperature of the prepared nitride semiconductor device;

s9: conveying the qualified nitride semiconductor devices to a packaging position by using a conveyor for packaging and warehousing;

s10: the temperature and humidity of the storehouse are strictly controlled.

2. The process of claim 1, wherein in S1, the channel layer and the barrier layer are made of one or more of gallium nitride, silicon nitride and aluminum nitride.

3. The process for forming a nitride semiconductor device according to claim 1 wherein in S2, etching covers an area which is a part of the channel layer and the barrier layer, and the grooves are formed to have a length, width and height of 5cm, 3cm and 2cm, respectively.

4. The process of claim 1, wherein in step S3, the mask is formed with an inorganic material containing silicon and nitrogen, and the ratio of silicon to nitrogen in the inorganic material is 2: 4.

5. The process according to claim 1, wherein in S4, the acid solution and the mixture of hydrochloric acid, hydrofluoric acid and sulfuric acid are mixed, the ratio of hydrochloric acid, hydrofluoric acid and sulfuric acid to water is 2:3:1:10, and the pickling time is 20min to 30 min.

6. The process of claim 1, wherein in S5, nitrogen is used as a carrier for growing the contact layer, the temperature required for growing the contact layer is 600-700 ℃, and the time required for growing is 5-10 min.

7. The process according to claim 1, wherein in S6, the alkaline solution is a mixture of sodium hydroxide and water, and the ratio of sodium hydroxide to water is 20: 44.

8. The process according to claim 1, wherein in S7, the rubber is silicon rubber, which can avoid the flow of charges, effectively solve the problem of weak antistatic ability of the nitride semiconductor device, and improve the stability of the nitride semiconductor device.

9. The process of claim 1, wherein in S8, the temperature test range to be set is 1000 to 12 degrees celsius, and the strength tolerance range is 1 to 10 KN.

10. The process for forming a nitride semiconductor device according to claim 1, wherein in S9, the package is encapsulated with a sealing can, which maintains the hermeticity inside the sealing can.

Technical Field

The invention relates to the technical field of semiconductor device processing, in particular to a process for forming a nitride semiconductor device.

Background

The conductivity of the semiconductor device is between that of a good conductor and an insulator, and the special electrical characteristics of the semiconductor material are utilized to complete the electronic device with a specific function. Semiconductor devices (semiconductor devices) typically use silicon, germanium, or gallium arsenide as the semiconductor material and may be used as devices such as rectifiers, oscillators, light emitters, amplifiers, light detectors, and the like. For the purpose of distinction from integrated circuits, they are sometimes also referred to as discrete devices.

However, in the prior art, the anti-static capability of the nitride semiconductor device is weak, and the characteristics of the nitride semiconductor device are easily lost due to static electricity, so we propose a process for forming the nitride semiconductor device to solve the above-mentioned problems.

Disclosure of Invention

The invention aims to solve the defects that the existing PC member production process is inconvenient to carry out pretreatment processing work on a PC prefabricated member template, the heating maintenance work consumes longer time and has poor liquidity, and provides a process for forming a nitride semiconductor device.

In order to achieve the purpose, the invention adopts the following technical scheme:

a process for forming a nitride semiconductor device, comprising the steps of:

s1: selecting a substrate and a semiconductor stacked body of a semiconductor device, wherein the semiconductor stacked body grows into a channel layer and a barrier layer on the substrate in sequence;

s2: etching the tops of the grown channel layer and the barrier layer so as to form a groove on the tops of the channel layer and the barrier layer;

s3: laying a mask on the inner wall of the bottom of the groove;

s4: immersing the mask, the channel layer and the barrier layer in an acid solution to carry out acid washing operation;

s5: growing a contact layer on the tops of the masks on the tops of the channel layer and the barrier layer by using nitrogen;

s6: removing residues remained on the mask by using an alkaline etchant;

s7: insulating rubber products are wrapped at the non-contact positions of the channel layer, the barrier layer and the contact layer;

s8: carrying out performance detection on strength and temperature of the prepared nitride semiconductor device;

s9: conveying the qualified nitride semiconductor devices to a packaging position by using a conveyor for packaging and warehousing;

s10: the temperature and humidity of the storehouse are strictly controlled.

Preferably, in S1, the channel layer and the barrier layer are made of one or more of gallium nitride, silicon nitride and aluminum nitride.

Preferably, in S2, the etching covers an area corresponding to a part of the channel layer and the barrier layer, and the grooves are formed to have a length, a width and a height of 5cm, 3cm and 2cm, respectively.

Preferably, in S3, the mask is made of an inorganic substance containing silicon and nitrogen, and the ratio of silicon to nitrogen in the inorganic substance is 2: 4.

Preferably, in the step S4, the acid solution and the mixed solution of hydrochloric acid, hydrofluoric acid and sulfuric acid are introduced, the ratio of hydrochloric acid to hydrofluoric acid to sulfuric acid to water is 2:3:1:10, and the pickling time is 20min to 30 min.

Preferably, in S5, the nitrogen gas is used as a carrier for growing the contact layer, the temperature required for growing the contact layer is 600 to 700 ℃, and the time required for growing the contact layer is 5 to 10 min.

Preferably, in S6, the alkaline solution is a mixture of sodium hydroxide and water, and the ratio of sodium hydroxide to water is 20: 44.

Preferably, in S7, the rubber is silicon rubber, which can prevent charges from flowing, effectively solve the problem of weak antistatic ability of the nitride semiconductor device, and improve the stability of the nitride semiconductor device.

Preferably, in S8, the temperature test range to be set is 1000 to 12 degrees celsius, and the strength tolerance range is 1 to 10 KN.

Preferably, in S9, the package is sealed with a sealing box to maintain the sealing property inside the sealing box.

According to the process for forming the nitride semiconductor device, the contact layer is made of silicon, aluminum, gallium nitride, indium nitride and indium gallium nitride, the ratio of the silicon to the aluminum to the gallium nitride to the indium gallium nitride is 2:1:5:8:10, and the durability of the contact layer can be effectively improved;

the purpose of pickling after the mask is laid is that residues are formed on the mask if pickling operation is not performed in the process of growing the contact layer, at the moment, the mask needs to be pickled to remove the residues, the step and difficulty of pickling are increased rapidly, and the difficulty of the process is improved;

the nitride semiconductor device is reasonable in design, rubber is wrapped at non-contact positions of the channel layer, the barrier layer and the contact layer, so that the flow of charges on the surface of the nitride semiconductor device is effectively avoided, the problem of weak antistatic capacity of the nitride semiconductor device is solved, and the application range of the nitride semiconductor device is expanded.

Detailed Description

The present invention will be further illustrated with reference to the following specific examples.

A process for forming a nitride semiconductor device, comprising the steps of:

s1: selecting a substrate and a semiconductor stacked body of a semiconductor device, wherein the semiconductor stacked body grows into a channel layer and a barrier layer on the substrate in sequence;

s2, etching the top of the channel layer and the barrier layer so as to form a groove on the top of the channel layer and the barrier layer;

s3: laying a mask on the inner wall of the bottom of the groove;

s4: immersing the mask, the channel layer and the barrier layer in an acid solution to carry out acid washing operation;

s5: growing a contact layer on the tops of the masks on the tops of the channel layer and the barrier layer by using nitrogen;

s6: removing residues remained on the mask by using an alkaline etchant;

s7: insulating rubber products are wrapped at the non-contact positions of the channel layer, the barrier layer and the contact layer;

s8: carrying out performance detection on strength and temperature of the prepared nitride semiconductor device;

s9: conveying the qualified nitride semiconductor devices to a packaging position by using a conveyor for packaging and warehousing;

s10: the temperature and humidity of the storehouse are strictly controlled.

In this embodiment, in S1, the channel layer and the barrier layer are made of one or more of gallium nitride, silicon nitride and aluminum nitride, in S2, the area covered by etching is a part of the channel layer and the barrier layer, the length, width and height of the formed groove are 5cm, 3cm and 2cm respectively, in S3, the mask is made of an inorganic substance containing silicon and nitrogen, the ratio of silicon and nitrogen in the inorganic substance is 2:4, in S4, the acid solution is mixed with hydrochloric acid, hydrofluoric acid and sulfuric acid, the ratio of hydrochloric acid, hydrofluoric acid and sulfuric acid and water is 2:3:1:10, the acid cleaning time is 20min to 30min, in S5, wherein nitrogen is used as a carrier for growing the contact layer, the temperature required for growing the contact layer is 600 ℃ to 700 ℃, the time required for growing is 5min to 10min, in S6, the alkaline solution is a mixture of sodium hydroxide and water, in S7, the rubber is silicon rubber which can avoid the flow of charges, effectively solves the problem of weak antistatic capability of a nitride semiconductor device and improves the stability of the nitride semiconductor device, in S8, the set temperature test range is 1000-12 ℃, the strength bearing range is 1-10 KN, in S9, a sealing box is used for packaging, the sealing property inside the sealing box is maintained, the process for forming the nitride semiconductor device is characterized in that the contact layer is made of silicon, aluminum, gallium nitride, indium nitride and indium gallium nitride, the ratio of the silicon, the aluminum, the gallium nitride, the indium nitride and the indium gallium nitride is 2:1:5:8:10, and the durability of the contact layer can be effectively improved;

the process completely gets rid of the problem that the mask is pickled in advance in the world, compared with the traditional mode that pickling is carried out after a contact layer is grown, the mode has fewer operation steps and simpler and more convenient manufacturing work, and the non-contact positions of the channel layer, the barrier layer and the contact layer of the prepared nitride semiconductor device are wrapped with insulating rubber which is silicon rubber, so that the silicon rubber can avoid the flow of charges, the problem of weak antistatic capability of the nitride semiconductor device is effectively solved, the stability of the nitride semiconductor device is improved, and the application range of the nitride semiconductor device is invisibly improved.

The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.