阅读说明：本技术 阻变式存储器的制造方法和阻变式存储器 (Resistive random access memory and manufacturing method thereof ) 是由 姚国峰 沈健 于 2018-04-03 设计创作，主要内容包括：本发明提供一种阻变式存储器的制造方法和阻变式存储器,该方法,包括：在绝缘层上硅SOI晶圆上设置填充多晶硅的深沟槽,得到带有深沟槽的SOI晶圆；其中,深沟槽贯穿SOI晶圆的硅器件层、埋氧层,并抵达支撑层；在带有深沟槽的SOI晶圆上制作互补金属氧化物半导体CMOS电路,得到包含CMOS电路的SOI晶圆；将包含CMOS电路的SOI晶圆的支撑层减薄至埋氧层的表面,并在填充多晶硅的深沟槽的顶端位置形成凹槽；在SOI晶圆的埋氧层上制作忆阻器。从而实现RRAM标准CMOS电路制作工艺与忆阻器制作工艺的分离,使得在RRAM的规模化生产过程中引入贵金属作为忆阻器的电极,从而提高RRAM中忆阻器的电学存储特性。(The invention provides a manufacturing method of a resistive random access memory and the resistive random access memory, wherein the method comprises the following steps: arranging a deep groove filled with polysilicon on the silicon-on-insulator (SOI) wafer on the insulating layer to obtain the SOI wafer with the deep groove; the deep groove penetrates through a silicon device layer and an oxygen embedding layer of the SOI wafer and reaches the supporting layer; manufacturing a complementary metal oxide semiconductor CMOS circuit on the SOI wafer with the deep groove to obtain the SOI wafer containing the CMOS circuit; thinning a supporting layer of an SOI wafer containing a CMOS circuit to the surface of a buried oxide layer, and forming a groove at the top end of a deep groove filled with polysilicon; and manufacturing a memristor on a buried oxide layer of the SOI wafer. Therefore, the separation of the RRAM standard CMOS circuit manufacturing process and the memristor manufacturing process is realized, and the noble metal is introduced to serve as the electrode of the memristor in the RRAM large-scale production process, so that the electrical storage characteristic of the memristor in the RRAM is improved.)