阅读说明：本技术 包括钻孔螺钉形式的引脚的半导体器件封装 (Semiconductor device package including pin in the form of a drill screw ) 是由 T·沙夫 T·贝默尔 M·格鲁贝尔 T·迈尔 F·辛格 于 2021-06-28 设计创作，主要内容包括：一种半导体器件封装(100)包括：管芯载体(11)；至少一个半导体管芯(20),至少一个半导体管芯(20)设置在载体(11)上,半导体管芯(20)包括至少一个接触焊盘,至少一个接触焊盘在远离载体(11)的主面上；密封件(30),密封件(30)设置在半导体管芯(20)上方；电连接器(40),电连接器(40)与接触焊盘电连接；以及钻孔螺钉(50),钻孔螺钉(50)旋拧穿过密封件(30)并且与电连接器(40)连接。(A semiconductor device package (100) comprising: a die carrier (11); at least one semiconductor die (20), the at least one semiconductor die (20) being arranged on the carrier (11), the semiconductor die (20) comprising at least one contact pad, the at least one contact pad being on a main face remote from the carrier (11); an encapsulant (30), the encapsulant (30) disposed over the semiconductor die (20); an electrical connector (40), the electrical connector (40) being electrically connected to the contact pad; and a drilling screw (50), the drilling screw (50) being screwed through the seal (30) and connected with the electrical connector (40).)

1. A semiconductor device package (100), comprising:

a die carrier (11);

at least one semiconductor die (20), the at least one semiconductor die (20) disposed on the die carrier (11);

an encapsulant (30), the encapsulant (30) disposed over the semiconductor die (20);

an electrical connector (40), the electrical connector (40) being electrically connected to the semiconductor die (20) or to another electrical device; and

a metal drilling screw (50), said metal drilling screw (50) being screwed through said seal (30) and connected with said electrical connector (40).

2. The semiconductor device package (100) of claim 1, wherein

The drilling screw (50) is drilled into the electrical connector (40).

3. The semiconductor device package (100) of claim 1 or 2, wherein

The drilling screw (50) comprises a drilling end section, a screw section adjacent to the drilling end section and a rod section adjacent to the screw section.

4. The semiconductor device package (100) of claim 3, wherein

The drill screw further comprises a driver section at or integrated in the end of the rod section.

5. The semiconductor device package (100) of any preceding claim, further comprising

A substrate (10), wherein the substrate (10) comprises the die carrier (11) and is one of the group consisting of a lead frame, a direct copper bond substrate, a direct aluminum bond substrate, and an active metal braze substrate.

6. The semiconductor device package (100) of claim 5, wherein

The substrate (10) is a group consisting of a direct copper bonded substrate, a direct aluminum bonded substrate or an active metal brazing substrateWherein the substrate (10) comprises a ceramic layer, in particular AlO, AlN, Al, or a dielectric layer₂O₃In particular of Si, said dielectric layer being in particular of Si₃N₄。

7. The semiconductor device package (100) of any of the preceding claims, wherein

The encapsulation (30) comprises a first upper main face remote from the die carrier (11), wherein the drilling screw (50) extends through the first upper main face of the encapsulation (30).

8. The semiconductor device package (100) of any of the preceding claims, wherein

The electrical connector (40) is one of the group consisting of:

-a cannula comprising a lumen,

-a metal block, and

-a metal layer of one of a direct copper bond substrate, a direct aluminum bond substrate or an active metal braze substrate.

9. The semiconductor device package (100) of any of the preceding claims, wherein

The drilling screw (50) is made of one of Cu, Cu alloy, Al alloy or steel.

10. A semiconductor device package according to any of the preceding claims, comprising

A plurality of semiconductor transistor dies arranged on the die carrier (11), at least one of the semiconductor transistor dies comprising at least one contact pad on a main face remote from the die carrier (11);

a plurality of semiconductor diode dies arranged on the die carrier (11), wherein at least one of the semiconductor diode dies is connected in parallel with one of the semiconductor transistor dies;

a plurality of electrical connectors, wherein at least one of the electrical connectors is connected to one of the contact pads of the semiconductor transistor die; and

a plurality of metal drilling screws, wherein at least one of the metal drilling screws is screwed through the seal (30) and connected with the electrical connector (40).

11. The semiconductor device package of claim 10, wherein

The semiconductor transistor die and the semiconductor diode die are interconnected to form an AC/AC converter circuit, an AC/DC converter circuit, a DC/AC converter circuit, a frequency converter, or a DC/DC converter circuit.

12. A method (600) for manufacturing a semiconductor device package, comprising:

providing a die carrier (610);

disposing at least one semiconductor die onto the die carrier (620);

electrically connecting (630) the semiconductor die or another electrical device with an electrical connector;

applying an encapsulation layer (640) over the semiconductor die, the die carrier, and the electrical connectors; and

a metal drill screw is threaded through the seal such that an end of the drill screw contacts the electrical connector (650).

13. The method of claim 12, wherein

Providing the die carrier includes providing one of a group consisting of a lead frame, a direct copper bond substrate, a direct aluminum bond substrate, and an active metal braze substrate, wherein the die carrier is part of the one of the group.

14. The method of any one of claims 11 to 13,

the encapsulant includes a first upper major face distal from the die carrier, and screwing the drilling screw is performed such that the drilling screw extends through the first upper major face of the encapsulant.

15. The method of any one of claims 11 to 14,

screwing the drill screw includes drilling the screw into the electrical connector.

Technical Field

The present disclosure relates to a semiconductor device package and a method for manufacturing the semiconductor device package.

Background

In many electronic systems, converters such as DC/DC converters, AC/DC converters, or DC/AC converters must be employed in order to generate the current, voltage, and/or frequency to be used by the electronic circuit (e.g., motor drive circuit). Converter circuits as mentioned before typically comprise one or more half-bridge circuits, each provided by two semiconductor power switches (e.g. power MOSFET devices) and further components (e.g. diodes connected in parallel with transistor devices) and passive components (e.g. inductors and capacitors). The switching of the power MOSFET device may be controlled by a semiconductor control chip. Several components of the converter circuit may in principle be provided as separate components mounted on a printed circuit board. Alternatively, part or all of the components may be housed in a single semiconductor device package to form a multi-chip module, which may have the advantage of simplifying the assembly of the entire converter circuit on the board and may reduce the space required on the board.

However, for these types of semiconductor device packages, there are stable challenges with respect to forming external contacts and connecting the external contacts with contact pads of the semiconductor die. Semiconductor device packages typically require vertical routing of electrical contacts, i.e., from the level at which the semiconductor die is assembled up. As an example, a specific package may be employed in which the substrate is a Direct Copper Bond (DCB) and the vertical interconnects are formed by solder sockets with pressed-in pins. The assembly is then protected by a soft silicone potting. Such soft castings have serious disadvantages compared to hard molding compounds, because they are less protective against external ions, less rigid against mechanical forces, and expensive. If standard moulding compounds can be used, the outer frame can be saved and the function of the outer frame can be assumed by the moulding itself. In addition, a high performance IMS (insulated metal substrate) can replace the DCB, since the mechanical stiffness can also be covered by the molding. In any event, the flexibility of the desired pin locations makes molding of such assemblies very difficult.

For these and other reasons, there is a need for the present disclosure.

Disclosure of Invention

A first aspect of the present disclosure relates to a semiconductor device package, including: a die carrier; at least one semiconductor die disposed on the die carrier; an encapsulant disposed over the semiconductor die; electrical connectors electrically connected to contact pads of the semiconductor die or to another electrical device; and a metal drill screw threaded through the seal and connected with the electrical connector.

A second aspect of the present disclosure relates to a method for manufacturing a semiconductor device package, including: providing a die carrier; disposing at least one semiconductor die onto a die carrier; electrically connecting the semiconductor die or another electrical device with an electrical connector; applying an encapsulation layer over the semiconductor die, the die carrier, and the electrical connectors; a metal drill screw is threaded through the seal such that the end of the drill screw contacts the electrical connector.

Drawings

The accompanying drawings are included to provide a further understanding of the embodiments, and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments and together with the description serve to explain the principles of the embodiments. Other embodiments and many of the intended advantages of embodiments will be readily appreciated as they become better understood by reference to the following detailed description.

The elements of the drawings are not necessarily to scale relative to each other. Like reference numerals designate corresponding similar parts.

Fig. 1 shows a schematic cross-sectional side view representation of a semiconductor device package according to a first aspect of an example, wherein the electrical connector is formed by a sleeve, wherein an enlarged cross-section shows the connection between the screw and the electrical connector in more detail.

Fig. 2 includes fig. 2A and 2B and illustrates a perspective top view of a complete semiconductor device package according to the example of fig. 1, where fig. 2A illustrates the completed package and fig. 2B illustrates the package with a portion of the encapsulant broken away to show the interior of the package.

Fig. 3 shows a schematic cross-sectional side view representation of a semiconductor device package according to an example first aspect, wherein the electrical connector is not connected to the semiconductor die, but to another electrical device.

Fig. 4 includes fig. 4A to 4H, and shows perspective views of different examples of the drill screw.

Fig. 5 includes fig. 5A and 5B, and shows respective portions of another example of a semiconductor device package in a perspective top view (a) and a cross-sectional side view (B) through two adjacent electrical connectors.

Fig. 6 includes fig. 6A and 6B, and shows another example of a semiconductor device package in a perspective top view (a) and a cross-sectional side view through an electrical connector.

Fig. 7 shows a flow chart of a method for manufacturing a semiconductor device package according to the second aspect.

Detailed Description

Various aspects and embodiments are now described with reference to the drawings, wherein like reference numerals are generally used to refer to like elements throughout. In the following description, for purposes of explanation, numerous specific details are set forth in order to provide a thorough understanding of one or more aspects of the embodiments. It will be apparent, however, to one skilled in the art, that one or more aspects of the embodiments may be practiced with a lesser degree of specific detail. In other instances, well-known structures and elements are shown in schematic form in order to facilitate describing one or more aspects of the embodiments. It is to be understood that other embodiments may be utilized and structural or logical changes may be made without departing from the scope of the present disclosure. It should also be noted that the figures are not drawn to scale or are not necessarily drawn to scale.

In the following detailed description, reference is made to the accompanying drawings which form a part hereof, and in which is shown by way of illustration specific aspects in which the disclosure may be practiced. In this regard, directional terminology, such as "top," "bottom," "front," "back," etc., may be used with reference to the orientation of the figure(s) being described. Because components of the described devices can be positioned in a number of different orientations, the directional terminology is used for purposes of illustration and is in no way limiting. It is to be understood that other aspects may be utilized and structural or logical changes may be made without departing from the scope of the present disclosure. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present disclosure is defined by the appended claims.

In addition, while a particular feature or aspect of an embodiment may have been disclosed with respect to only one of several implementations, such feature or aspect may be combined with one or more other features or aspects of the other implementations as may be desired and advantageous for any given or particular application. Furthermore, to the extent that the terms "includes," has, "" with, "or other variations thereof are used in either the detailed description or the claims, these terms are intended to be inclusive in a manner similar to the term" comprising. The terms "coupled" and "connected," along with their derivatives, may be used. It will be understood that these terms may be used to indicate that two elements co-operate or interact with each other, whether or not they are in direct physical or electrical contact, or they are not in direct contact with each other. Moreover, the term "exemplary" is meant only as an example, and not as optimal or optimal. The following detailed description, therefore, is not to be taken in a limiting sense, and the scope of the present disclosure is defined by the appended claims.

Embodiments of semiconductor modules and methods for fabricating semiconductor modules may use various types of transistor devices. Embodiments may use transistor devices embodied in semiconductor dies or semiconductor chips, wherein the semiconductor dies or semiconductor chips may be provided in the form of blocks of semiconductor material as fabricated from and diced from a semiconductor wafer, or in another form in which further process steps have been carried out (e.g., application of an encapsulation layer to the semiconductor dies or semiconductor chips). Embodiments may also use horizontal or vertical transistor devices, wherein these structures may be provided in a form in which all contact elements of the transistor device are provided on one of the main faces of the semiconductor die (horizontal transistor structure) or in a form in which at least one electrical contact element is arranged on a first main face of the semiconductor die and at least one other electrical contact element is arranged on a second main face opposite to the main face of the semiconductor die (vertical transistor structure), such as a MOS transistor structure or an IGBT (insulated gate bipolar transistor) structure.

In any case, the semiconductor die or semiconductor chip may include contact elements or contact pads on one or more of their outer surfaces, wherein the contact elements are for electrically contacting the semiconductor die. The contact elements may have any desired form or shape. For example, they may have the form of lands, i.e. a flat contact layer on the outer surface of the semiconductor die. The contact elements or contact pads may be made of any electrically conductive material, for example, a metal (e.g., aluminum, gold or copper), or a metal alloy, or a conductive organic material, or a conductive semiconductor material. The contact element may also be formed as a stack of layers of one or more of the above-mentioned materials.

Embodiments of a semiconductor device package may include an encapsulant or encapsulation material having a semiconductor die or transistor device embedded therein. The sealing material may be any electrically insulating material, for example, any kind of molding material, any kind of resin material, or any kind of epoxy material. The sealing material may also be a polymer material, a polyimide material, a thermoplastic material, a silicone material, a ceramic material, and a glass material. The sealing material may also comprise any of the above materials, and further comprise a filler material, e.g. a thermally conductive additive, embedded therein. For example, these filler additives may be made of AlO or Al₂O₃AlN, BN or SiN. Further, for example, the filler additive may have a fiber shape, and may be made of carbon fiber or nanotube.

Fig. 1 illustrates a cross-sectional side view representation of a semiconductor device package according to an example.

The semiconductor device package 100 of fig. 1 includes a direct copper bond substrate (DCB)10, the direct copper bond substrate 10 generally including a ceramic layer 12, the ceramic layer 12 being covered by a first upper metallization layer 11 and a second lower metallization layer 13. The first metallization layer 11 may comprise one or more first metallization regions 11A (die carrier), and one or more semiconductor dies 20 may be disposed on the one or more first metallization regions 11A. This example shows one metalized region 11A with two semiconductor dies 20 disposed on one metalized region 11A. The semiconductor dies 20 may be, for example, semiconductor transistor dies (e.g., IGBT dies), or one semiconductor die 20 may be a semiconductor transistor die and the other may be a semiconductor diode die. In general, each of the semiconductor transistor dies may be configured in such a way that the first, lower main face comprises a first contact pad (in particular a drain contact pad) and the second, upper main face comprises a second contact pad (in particular a source contact pad) and a third contact pad (in particular a gate contact pad). The semiconductor diode die may further include a vertical structure having a first contact pad on a first lower major surface thereof and a second contact pad on a second upper major surface thereof. For example, the semiconductor transistor die and the semiconductor diode die may be applied onto the first metalized region 11A by using silver paste, solder, or sintering paste. The two semiconductor dies 20 may be connected to each other, which are not shown herein for simplicity. The semiconductor dies 20 may each include at least one electrical contact pad on a major face remote from the substrate 10.

Further, the encapsulant 30 is disposed over the semiconductor die 20 such that the encapsulant 30 covers the semiconductor die 20 and the upper major face and side faces of the DCB 10.

The first metallization layer 11 may also comprise one or more second metallization regions 11B which may serve as intermediate electrical connectors. The metalized regions 11B may be connected to contact pads of the semiconductor die 20 by bonding wires 60. In addition, a metal sleeve 40 (electrical connector) may be provided on the metalized region 11B, the metal sleeve 40 being sized to receive the drill screw 50.

As can be seen in the enlarged cross-section of fig. 1, the drill screw 50 may comprise a drill end section 51, a screw section 52 adjacent to the drill end section 51, and a rod section 53 adjacent to the screw section 52. The drilling screw 50 is drilled and screwed through the seal 30 until the drilling end section 51 reaches the metal sleeve 40. The bore end section 51 can then be drilled further into the metal sleeve 40. The length of the screw section 52 and the thickness of the seal 30 may be sized such that the screw section 52 is fully threaded into the seal 30. Alternatively, it is also possible that the screw section is not fully screwed into the seal and that part of the screw section is located above the upper surface of the seal 30.

As can also be seen in the enlarged section of fig. 1, the metal sleeve 40 comprises a lumen 41, the lumen 41 comprising an open upper end into which a drill screw 50 is drilled. The transverse diameter of the drilling section 51 is slightly larger than the transverse diameter of the lumen of the metal sleeve 40.

It should be added that fig. 1 shows two semiconductor dies 20, which two semiconductor dies 20 can be connected to respective electrical connectors 40 and drilling screws 50 in the same manner as described above. However, it may also be the case that one of the semiconductor dies 20 is connected to an external connector in a different manner, wherein, for example, the external connector is provided by a metal sleeve into which the crimping pins are inserted.

According to fig. 1, a drill screw 50 is screwed into the seal 30 through the upper main surface of the seal 30. However, it should be added that the drilling screw can also be screwed into the seal through any other outer wall of the seal (for example through one or more of the side walls of the seal).

Fig. 2 includes fig. 2A and 2B, and shows a perspective top view of an example of a complete semiconductor device package.

Fig. 2B shows an example of a semiconductor device package 200 that includes a DCB 210 and a plurality of semiconductor dies 220 disposed on a first upper metal layer of the DCB 210. Semiconductor die 220 may be a semiconductor transistor die (e.g., an IGBT) and a semiconductor diode die. It can be seen that several of the semiconductor dies 220 are connected to respective metalized regions 211B of the DCB 210 by bonding wires. These metallization regions 211B are each electrically connected to a respective sleeve 240 arranged on the upper main surface of the metallization region 211B. In addition, drilling screws 250 are threaded through the seals 230 and respectively drilled into the upper portion of the sleeve 240.

Fig. 3 illustrates a cross-sectional side view representation of a semiconductor device package according to another example. The semiconductor device package 300 of fig. 3 is similar to the semiconductor device package 100 of fig. 1, and thus only the differences are explained hereinafter. For the semiconductor device package 100 of fig. 1, one or both of the depicted semiconductor dies 20 are connected to electrical connectors 40. In the semiconductor device package 300 of fig. 3, the semiconductor die 20 is not connected to the electrical connectors 40. Conversely, another electrical device 70 (e.g., a temperature sensor 70) is disposed on the second metalized region 11B and thereby electrically connected to the electrical connector 40. The semiconductor die 20 may be connected to another type of external connector, which is not shown herein for simplicity.

The example of the semiconductor device package 300 shown in fig. 3 is for clarity of illustration, and one or more semiconductor die 20 present in the semiconductor device package 300 need not be electrically connected to a drill screw as shown and explained in connection with fig. 1. It should be added, however, that this does not mean that the semiconductor die 20 must be connected to other types of external connectors. At least some of them may also be connected to electrical connectors 40 and drill screws 50, as shown in the example of semiconductor device package 100 of fig. 1.

Fig. 4 includes fig. 4A to 4H, and shows perspective views of different examples of the drill screw.

In these examples, it can be seen that the drill screw further comprises a driver section, which is located at the end of the rod section 53 or is integrated in the end of the rod section 53.

Fig. 4A illustrates an example of a drill screw used in the example of the semiconductor device package shown and described in connection with fig. 1. Such a drilling screw 50 comprises a drilling section 51, a screw section 52 and a rod section 53. Furthermore, such a drilling screw 50 has a square profile over its entire length, so that the upper end section of the rod-shaped section 53 can serve as a driver section at which a square wrench can be engaged to screw the drilling screw 50 into the seal.

Fig. 4B and 4C show other examples of drill screws similar to the example of fig. 4A. The drill screws 150 and 250 shown in fig. 4B and 4C differ from the drill screw 50 of fig. 4A only in that the length of the rod-shaped sections 153, 253 is extended at the expense of the length of the screw sections 152, 252 and the drill sections 151, 251. In the drill screw 150 of fig. 4B, the length of both the screw section 152 and the drill end section 151 are shortened to about half their length in the drill screw of fig. 4A. In the drill screw 250 of fig. 4C, the drill section 251 has about the same length as the drill section 51 of the drill screw 50, but is reduced in diameter, while the screw section 252 is shortened such that it has only about one turn of thread. The rod-like sections 153, 253 include a square profile as in the drill screw 50 of fig. 4A.

Fig. 4D shows another example of a drill screw 350, which includes a drill section 351, a screw section 352, a rod section 353, and a driver section 354. This means that in this example of the drill screw 350, the rod section 353 and the driver section 354 are clearly distinguished from one another. Driver segment 354 also includes a square profile.

Fig. 4E shows another example of a drill screw 450, which includes a drill section 451, a screw section 452, a rod section 453, and a driver section 454. Similar to the drill screw 350 from fig. 4D, in this example of the drill screw 450, the rod section 453 and the driver section 454 are clearly distinguished from one another. The driver section 454 also includes a square profile.

Fig. 4F to 4H show other examples of drill screws that include different driver sections than those of the previously shown drill screws.

Fig. 4F shows an example of a drill screw 550 formed after a conventional countersunk-head screw. Thus, the drill screw 550 includes a drill section 551 and a screw section 552 similar to the drill section 51 and the screw section 52 of the drill screw 50, a stem section 553 similar to the stem section 353 of the drill screw 350, and a driver section 554 formed as a tapered head similar to a conventional countersunk head screw. On the upper surface of the cone head there may be any provided hexagonal socket or cruciform recess or any other type of socket or recess with which a conventional wrench or spanner may engage.

Fig. 4G shows an example of a drill screw 650, which includes a drill section 651 and a screw section 652 similar to the drill section 51 and the screw section 52 of the drill screw 50, a shank section 653 similar to the shank section 353 of the drill screw 350, and a driver section 654 formed similar to an octagonal screw head, which may be driven by a suitable conventional wrench or spanner. Of course, the driver segments 654 may also be formed in a hexagonal shape.

Fig. 4H shows an example of a drill screw 750, which includes a drill section 751 and a screw section 752 similar to the drill section 51 and the screw section 52 of the drill screw 50, a rod section 753 also similar to the rod section 353 of the drill screw 350, and a driver section 754 integrated into a cavity in an upper portion of the rod section 753. The cavity of driver section 754 is formed like an internal octagonal or octagonal socket, which can be driven by a suitable conventional wrench or spanner. Of course, also in this case, driver segment 754 may be formed in a hexagonal shape.

Furthermore, it should be added that the present disclosure is of course not limited to the type of drilling screw shown in fig. 4A to 4H. Rather, any other type of drilling screw may be used.

Fig. 5 includes fig. 5A and 5B, and shows another example of a semiconductor device package in a perspective top view (a) and a cross-sectional side view (B) through two adjacent electrical connectors.

The semiconductor device package 400 of fig. 5 includes a structure similar to that of the semiconductor device package 100 of fig. 1, and thus only the difference from the latter is explained hereinafter. The semiconductor device package 400 of fig. 5 also includes a DCB 310, the DCB 310 including a first upper metallization layer 311, the first upper metallization layer 311 including a first metallization region 311A and a second metallization region 311B. A plurality of semiconductor dies 320 are disposed on the first metalized regions 311A, and several of the semiconductor dies 320 are connected with respective second metalized regions 311B of the first metalized layer 311 of the DCB 310 by bonding wires 360. These second metallization regions 311B are each electrically connected to a respective metal block 340 arranged on the upper main surface of the second metallization region 311B. In addition, drilling screws 350 are screwed through the seal 330 and respectively drilled into the upper portion of the metal block 340. The metal block may be, for example, a copper block.

Fig. 6 includes fig. 6A and 6B, and shows another example of a semiconductor device package in a perspective top view (a) and a cross-sectional side view (B) through an electrical connector.

The semiconductor device package 500 of fig. 6 includes a structure similar to that of the semiconductor device package 100 of fig. 1, and thus only the difference from the latter is explained hereinafter. The semiconductor device package 500 of fig. 6 also includes a DCB 410, the DCB 410 including a first upper metallization layer 411, the first upper metallization layer 411 including a first metallization region 411A and a second metallization region 411B. A plurality of semiconductor dies 420 are disposed on the first metalized regions 411A, and several of the semiconductor dies 420 are connected with respective second metalized regions 411B of the first metalized layer 411 of the DCB 410 by bonding wires 460. These second metallized areas 411B are not used as intermediate electrical connectors, but are directly electrically connected by drilling screws 450. More specifically, drilling screws 450 are screwed through seals 430 and respectively drilled into an upper portion of second metalized region 411B. In the case of the DCB 410, the first upper metallization layer 411 may have to be formed slightly thicker or significantly thicker than usual in order to function properly.

Fig. 7 shows a flow chart of a method for manufacturing a semiconductor device package according to the second aspect.

The method 600 of FIG. 7 includes: providing a die carrier (610); disposing at least one semiconductor die onto a die carrier, the semiconductor die including at least one contact pad (620); electrically connecting (630) the contact pads with an electrical connector; applying an encapsulation layer (640) over the semiconductor die, the die carrier, and the electrical connectors; and screwing a metal drill screw through the seal such that an end of the drill screw contacts the electrical connector (650).

According to an example of the method 500, providing a die carrier includes providing one of the group consisting of a lead frame, a direct copper bond substrate, a direct aluminum bond substrate, and an active metal braze substrate, wherein the die carrier is part of one of the group.

According to an example of the method 500, the encapsulant includes a first upper major face remote from the die carrier, and screwing the drilling screw is performed such that the drilling screw extends through the first upper major face of the encapsulant.

According to an example of the method 500, screwing the drill screw includes drilling the screw into the electrical connector.

Further examples of the method 500 may be explained by adding one or more of the features as described above in connection with the semiconductor device package according to the first aspect.

Example 1 is a semiconductor device package, comprising: a die carrier; at least one semiconductor die disposed on the die carrier; an encapsulant disposed over the semiconductor die; an electrical connector electrically connected to the semiconductor die or to another electrical device; and a metal drill screw threaded through the seal and connected with the electrical connector.

Example 2 is the semiconductor device package according to example 1, wherein the drilling screw is drilled into the electrical connector.

Example 3 is the semiconductor device package of example 1 or 2, wherein the drilling screw includes a drilling end section, a screw section adjacent to the drilling end section, and a rod section adjacent to the screw section.

Example 4 is the semiconductor device package of example 3, wherein the drill screw further comprises a driver section located at or integrated in an end of the rod section.

Example 5 is a semiconductor device package according to any of the preceding examples, further comprising a substrate, wherein the substrate comprises a die carrier and is one of the group consisting of a lead frame, a direct copper bond substrate, a direct aluminum bond substrate, and an active metal solder substrate.

Example 6 is a semiconductor device package according to example 5, wherein the substrate is one of the group consisting of a direct copper bond substrate, a direct aluminum bond substrate or an active metal braze substrate, wherein the substrate comprises a ceramic layer, in particular AlO, AlN, Al, or a dielectric layer₂O₃Of a dielectric layer, in particular of Si₃N₄。

Example 7 is a semiconductor device package according to any of the preceding examples, wherein the encapsulant includes a first upper major face remote from the die carrier, wherein the drilling screw extends through the first upper major face of the encapsulant.

Example 8 is a semiconductor device package according to any one of the preceding examples, wherein the electrical connector is one of the group consisting of:

-a cannula comprising a lumen,

-a metal block, and

-a metal layer of one of a direct copper bond substrate, a direct aluminum bond substrate or an active metal braze substrate.

Example 9 is the semiconductor device package according to any one of the preceding examples, wherein the drilling screw is made of one of Cu, Cu alloy, Al alloy, or steel.

Example 10 is a semiconductor device package according to any one of the preceding examples, comprising: a plurality of semiconductor transistor dies disposed on the die carrier, at least one of the semiconductor transistor dies including at least one contact pad, the at least one contact pad being on a major face remote from the die carrier;

a plurality of semiconductor diode dies disposed on the die carrier, wherein at least one of the semiconductor diode dies is connected in parallel with one of the semiconductor transistor dies;

a plurality of electrical connectors, wherein at least one of the electrical connectors is connected to one of the contact pads of the semiconductor transistor die; and

a plurality of metal drill screws, wherein at least one of the metal drill screws is threaded through the seal and connected with the electrical connector.

Example 11 is an electronic device according to example 10, wherein the semiconductor transistor die and the semiconductor diode die are interconnected to form an AC/AC converter circuit, an AC/DC converter circuit, a DC/AC converter circuit, a frequency converter, or a DC/DC converter circuit.

Example 12 is a method for manufacturing a semiconductor device package, comprising: providing a die carrier; disposing at least one semiconductor die onto a die carrier; electrically connecting the semiconductor die or another electrical device with an electrical connector; applying an encapsulation layer over the semiconductor die, the die carrier, and the electrical connectors; and screwing a metal drill screw through the seal such that an end of the drill screw contacts the electrical connector.

Example 13 is the method of example 12, wherein providing the die carrier includes providing one of a group consisting of a lead frame, a direct copper bond substrate, a direct aluminum bond substrate, and an active metal braze substrate, wherein the die carrier is part of one of the group.

Example 14 is the method of any one of examples 11 to 13, wherein the encapsulant includes a first upper major surface that is remote from the die carrier, and screwing the drilling screw is performed such that the drilling screw extends through the first upper major surface of the encapsulant.

Example 15 is the method of any one of examples 11 to 14, wherein screwing the drill screw includes drilling the screw into the electrical connector.

Although the disclosure has been illustrated and described with respect to one or more implementations, alterations and/or modifications may be made to the illustrated examples without departing from the spirit and scope of the appended claims. In particular regard to the various functions performed by the above described components or structures (assemblies, devices, circuits, systems, etc.), the terms (including a reference to a "means") used to describe such components are intended to correspond, unless otherwise indicated, to any component or structure which performs the specified function of the described component (e.g., that is functionally equivalent), even though not structurally equivalent to the disclosed structure which performs the function in the herein illustrated exemplary implementations of the disclosure.