阅读说明：本技术 一种功率半导体模块防静电的电极保护结构 (Power semiconductor module prevents electrode protection architecture of static ) 是由 王志超 于 2020-12-15 设计创作，主要内容包括：本发明公开的一种功率半导体模块防静电的电极保护结构,包括用于容纳功率半导体模块的外壳,所述外壳上设置有用于将栅极端子包围在内部的保护壳体,保护壳体在与栅极端子的端部对应的位置设置有开口。本发明通过设置上述的保护壳体,对栅极端子起到保护的作用,彻底的解决了带有静电的人或物触碰到栅极端子的风险,避免静电击穿现象的出现,并且本发明中的保护壳体简单,结构通用型非常强,可以适用于不同外形的功率半导体模块封装。(The invention discloses an anti-static electrode protection structure of a power semiconductor module, which comprises a shell for accommodating the power semiconductor module, wherein the shell is provided with a protection shell for enclosing a grid terminal inside, and the protection shell is provided with an opening at a position corresponding to the end part of the grid terminal. The protection shell is arranged to protect the grid terminal, the risk that people or objects with static electricity touch the grid terminal is thoroughly solved, the electrostatic breakdown phenomenon is avoided, and the protection shell is simple, has a very strong general structure and can be suitable for packaging power semiconductor modules with different shapes.)

1. An electrode protection structure for preventing static electricity of a power semiconductor module, comprising a housing for accommodating the power semiconductor module, characterized in that: the housing is provided with a protective case for enclosing the gate terminal therein, and the protective case is provided with an opening at a position corresponding to an end of the gate terminal.

2. The power semiconductor module antistatic electrode protection structure of claim 1, characterized in that: the protective shell and the shell are of an integrally formed structure.

3. The power semiconductor module antistatic electrode protection structure of claim 1, characterized in that: the protective shell is fixedly connected with the shell in an adhesive mode.

4. The power semiconductor module antistatic electrode protection structure of claim 1, characterized in that: the protection casing's bottom both sides are provided with the mounting panel, the cooperation mounting panel is provided with the mounting groove on the shell, the bottom of mounting panel is provided with the cardboard, and the bottom of cardboard is provided with the card protrudingly, cooperation card protrudingly is provided with the draw-in groove on the shell.

5. The power semiconductor module antistatic electrode protection structure of claim 4, characterized in that: the surface of the housing is flush with the surface of the mounting plate.

6. The power semiconductor module antistatic electrode protection structure of claim 1, characterized in that: a reinforcing lining piece is embedded in the protective shell.

7. The power semiconductor module antistatic electrode protection structure of claim 6, characterized in that: the reinforcing lining piece is L-shaped as a whole.

8. The power semiconductor module antistatic electrode protection structure of claim 1, characterized in that: a cover plate is arranged on the shell, and an installation space for installing the power semiconductor module is formed between the shell and the cover plate.

9. The power semiconductor module antistatic electrode protection structure of claim 1, characterized in that: the opening of the protective case is flush with the end of the gate terminal.

Technical Field

The invention relates to the technical field of power semiconductor module shells, in particular to an anti-static electrode protection structure of a power semiconductor module.

Background

An IGBT or MOSFET power module is a core semiconductor component for power electronic conversion, but because a gate insulating layer (gate oxide layer) of the IGBT or MOSFET has a thickness of only tens of nanometers, it is sensitive to electrostatic discharge, i.e., an element can be damaged by electrostatic field or electrostatic discharge, once the gate breaks down due to static electricity, the power module cannot be used at all, in order to solve the above problems, the gate terminal of the existing power module is generally short-circuited by a short-circuit ring, or protected by an anti-static foam, but these methods are not safe because the short-circuit ring or the electrostatic foam is easy to fall off, and further the risk of gate electrostatic breakdown exists, on the other hand, in the actual application process, an engineer can remove the short-circuit ring or the electrostatic foam, and the state at this time can refer to fig. 1, the structure in the figure comprises a shell 1-1, a power semiconductor module is installed in the shell 1-1, a grid terminal 1-2 connected with the power semiconductor module is arranged on the surface of the shell 1-1, and the grid terminal 1-2 can be seen visually, at the moment, the grid terminal 1-2 is in a completely exposed state, so that an engineer can easily touch the grid terminal 1-2 by hands in the operation process, the grid breakdown problem caused by human body static electricity is easily caused, and the product scrapping cost is increased.

Disclosure of Invention

The invention aims to avoid the defects in the prior art and provides an anti-static electrode protection structure of a power semiconductor module, thereby effectively solving the defects in the prior art.

In order to achieve the purpose, the invention adopts the technical scheme that: an electrode protection structure for preventing static electricity of a power semiconductor module comprises a shell for accommodating the power semiconductor module, wherein a protection shell for enclosing a grid terminal is arranged on the shell, and an opening is arranged at a position corresponding to the end part of the grid terminal on the protection shell.

Furthermore, the protective shell and the shell are of an integrally formed structure.

Further, the protection shell is fixedly connected with the shell in an adhesive mode.

Further, the bottom both sides of protection casing are provided with the mounting panel, the cooperation mounting panel is provided with the mounting groove on the shell, the bottom of mounting panel is provided with the cardboard, and the bottom of cardboard is provided with the card protrudingly, cooperation card protrudingly is provided with the draw-in groove on the shell.

Further, the surface of the housing is flush with the surface of the mounting plate.

Furthermore, a reinforcing lining piece is embedded in the protective shell.

Further, the reinforcing lining member is L-shaped as a whole.

Further, a cover plate is arranged on the shell, and an installation space for installing the power semiconductor module is formed between the shell and the cover plate.

Further, the opening of the protective case is flush with the end of the gate terminal.

The technical scheme of the invention has the following beneficial effects: the protection shell is arranged to protect the grid terminal, the risk that people or objects with static electricity touch the grid terminal is thoroughly solved, the electrostatic breakdown phenomenon is avoided, and the protection shell is simple, has a very strong general structure and can be suitable for packaging power semiconductor modules with different shapes.

Drawings

FIG. 1 is a state diagram of a gate terminal of a prior art power semiconductor module;

FIG. 2 is an enlarged view of a portion of FIG. 1 at A;

FIG. 3 is a schematic structural diagram of an embodiment of the present invention;

FIG. 4 is an enlarged view of a portion of FIG. 3 at B;

FIG. 5 is a schematic structural diagram of the embodiment of the present invention with the cover plate hidden;

FIG. 6 is a view showing an installation structure of a protective case according to an embodiment of the present invention;

FIG. 7 is another mounting structure of the protective housing of the embodiment of the invention;

fig. 8 is a partial enlarged view at C in fig. 7.

Detailed Description

The embodiments of the present invention will be described in further detail with reference to the drawings and examples. The following examples are intended to illustrate the invention but are not intended to limit the scope of the invention.

In the description of the present invention, "a plurality" means two or more unless otherwise specified; the terms "upper", "lower", "left", "right", "inner", "outer", "front", "rear", "head", "tail", and the like, indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, are only for convenience in describing and simplifying the description, and do not indicate or imply that the device or element referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, should not be construed as limiting the invention. In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "connected" and "connected" are to be interpreted broadly, e.g., as being fixed or detachable or integrally connected; can be mechanically or electrically connected; may be directly connected or indirectly connected through an intermediate. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.

As shown in fig. 3 to 5, the electrode protection structure for preventing static electricity of a power semiconductor module according to the present embodiment includes a housing 1 for accommodating the power semiconductor module, a protection case 2 for enclosing a gate terminal is disposed on the housing 1, and the protection case 2 is provided with an opening 201 at a position corresponding to an end of the gate terminal.

A cover plate 3 is provided on the housing 1, and an installation space for installing the power semiconductor module is formed between the housing 1 and the cover plate 3.

As shown in fig. 5, a power semiconductor module 4 is mounted in a casing 1, a gate terminal 5 is connected to the power semiconductor module 4, the gate terminal 5 is located at the top of the casing 1, a protective casing 2 surrounds the gate terminal 5, and a certain gap exists between the protective casing 2 and the gate terminal 5.

The protective casing 2 can be connected to the housing 1 using a variety of mounting structures:

in a first mounting structure, as shown in fig. 6, during the injection molding of the housing 1, the protective casing 2 is directly and simultaneously molded on the housing 1, that is, the protective casing 2 and the housing 1 are integrally molded.

The second mounting structure is: protection casing 2 is through sticky mode and 1 fixed connection of shell, and for the convenience of bonding, can be provided with the flange limit of certain width in the bottom of protection casing 2, realizes the bonding of protection casing 2 and shell 1 through the flange limit, improves the reliable shaping of bonding through increasing the bonding area.

7-8, the bottom both sides of the protective casing 2 are provided with mounting plates 202, the casing 1 is provided with a mounting groove 101 by matching with the mounting plates 202, the bottom of the mounting plate 202 is provided with a clamping plate 203, the bottom of the clamping plate 203 is provided with a clamping protrusion 204, the casing 1 is provided with a clamping groove 102 by matching with the clamping protrusion 204, the surface of the casing 1 is flush with the surface of the mounting plate 202, and the protective casing 2 is connected with the casing 1 by clamping.

The embedded interior lining part 6 that strengthens that is equipped with of protection casing 2, strengthens interior lining part 6 and wholly be L shape, strengthens interior lining part 6 and is the sheetmetal, and it inlays through pre-buried mode and establishes in the inside of protection casing 2 through the in-process at protection casing 2 injection moulding, plays the effect of strengthening to its overall structure.

The opening 201 of the protective case 2 is flush with the end of the gate terminal.

The protection shell is arranged to protect the grid terminal, the risk that people or objects with static electricity touch the grid terminal is thoroughly solved, the electrostatic breakdown phenomenon is avoided, and the protection shell is simple, has a very strong general structure and can be suitable for packaging power semiconductor modules with different shapes.

The embodiments of the present invention have been presented for purposes of illustration and description, and are not intended to be exhaustive or limited to the invention in the form disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art. The embodiment was chosen and described in order to best explain the principles of the invention and the practical application, and to enable others of ordinary skill in the art to understand the invention for various embodiments with various modifications as are suited to the particular use contemplated.