阅读说明：本技术 一种半导体器件、芯片封装结构以及电子设备 (Semiconductor device, chip packaging structure and electronic equipment ) 是由 张磊 陈遵淼 盛兰平 王菁 于 2019-03-28 设计创作，主要内容包括：本申请实施例提供一种半导体器件、芯片封装结构以及电子设备,涉及半导体技术领域,以在不增加半导体器件的尺寸的前提下,容纳更多数量的I/O接口。该半导体器件中第一数字逻辑电路设置于第一裸芯的有源表面上。第一I/O接口设置有源表面上临近有源表面的第一边的边缘位置。第一I/O接口与第一数字逻辑电路电连接。第二I/O接口设置于有源表面上与第一数字逻辑电连接,且位于第一I/O接口与的第一边之间。第二I/O接口与第一边的垂直距离小于第一I/O接口与第一边的垂直距离,且第二I/O接口在第一边上的垂直投影与第一I/O接口在第一边上的垂直投影至少存在部分重叠。第一I/O接口与第二I/O接口绝缘,且第一I/O接口的驱动和功耗与第二I/O接口的驱动和功耗不同。(The embodiment of the application provides a semiconductor device, a chip packaging structure and electronic equipment, and relates to the technical field of semiconductors, so that on the premise of not increasing the size of the semiconductor device, a larger number of I/O interfaces are accommodated. The first digital logic circuit in the semiconductor device is arranged on the active surface of the first bare chip. The first I/O interface is provided with an edge location on the source surface adjacent the first edge of the active surface. The first I/O interface is electrically connected to the first digital logic circuit. The second I/O interface is arranged on the active surface, electrically connected with the first digital logic and positioned between the first I/O interface and the first edge. The vertical distance between the second I/O interface and the first edge is smaller than that between the first I/O interface and the first edge, and the vertical projection of the second I/O interface on the first edge at least partially overlaps with the vertical projection of the first I/O interface on the first edge. The first I/O interface is insulated from the second I/O interface, and a driving and power consumption of the first I/O interface is different from a driving and power consumption of the second I/O interface.)