阅读说明：本技术 一种全柔性半导体器件封装结构 (Full-flexible semiconductor device packaging structure ) 是由 齐竹竹 郭秋泉 于 2020-12-14 设计创作，主要内容包括：本发明公开了一种全柔性半导体器件封装结构,设置于柔性半导体器件,所述柔性半导体器件包括显示层、电子元件层和基材,电子元件层位于显示层和基材之间；本封装结构位于显示层和基材之间,本封装结构由多孔材料层和无机填料层构成,所述多孔材料层位于显示层和电子元件层之间,所述无机填料层位于多孔材料层和电子元件层之间。本发明采用多功能材料以及双层功能粘接材料成功赋予柔性电子需要的抗弯曲性,承受弯曲次数可达20万次以上。(The invention discloses a fully flexible semiconductor device packaging structure which is arranged on a flexible semiconductor device, wherein the flexible semiconductor device comprises a display layer, an electronic element layer and a base material, and the electronic element layer is positioned between the display layer and the base material; the packaging structure is positioned between the display layer and the base material, and comprises a porous material layer and an inorganic filler layer, wherein the porous material layer is positioned between the display layer and the electronic element layer, and the inorganic filler layer is positioned between the porous material layer and the electronic element layer. The invention adopts the multifunctional material and the double-layer functional bonding material to successfully endow the flexible electronic with the bending resistance required, and the number of times of bending bearing can reach more than 20 ten thousand.)

1. A fully flexible semiconductor device packaging structure is arranged on a flexible semiconductor device, the flexible semiconductor device comprises a display layer (1), an electronic element layer (3) and a base material (5), and the electronic element layer (3) is located between the display layer (1) and the base material (5); the packaging structure is positioned between a display layer (1) and a base material (5), and is characterized by comprising a porous material layer (2) and an inorganic filler layer (4), wherein the porous material layer (2) is positioned between the display layer (1) and an electronic element layer (3), and the inorganic filler layer (4) is positioned between the porous material layer (2) and the electronic element layer (3).

2. The fully flexible semiconductor device package structure according to claim 1, wherein the inorganic filler layer (4) is formed by mixing an adhesive and inorganic particles, the inorganic particles are alumina, aluminum nitride, silicon dioxide, alumina ceramic, or a mixture of alumina and/or aluminum nitride and/or silicon dioxide and/or alumina ceramic, and the adhesive is epoxy type, acrylate type, or silicone type.

3. The fully flexible semiconductor device package structure according to claim 2, wherein the inorganic filler layer (4) is formed by mixing 100 parts by weight of the adhesive and 10 to 50 parts by weight of the inorganic particles, the inorganic filler layer (4) covers the electronic component, and the thickness of the inorganic filler layer (4) above the electronic component is 5 to 20 μm.

4. The fully flexible semiconductor device package structure according to claim 3, wherein the inorganic filler layer (4) is prepared by the following method: the inorganic particles and the binder are stirred and uniformly dispersed, and then the coating is formed by spraying or coating.

5. The fully flexible semiconductor device package structure according to claim 2, wherein the porous material layer (2) is made of polyurethane and/or acrylate, and the thickness of the porous material layer (2) is 100 to 300 μm.

6. The fully flexible semiconductor device package structure according to claim 5, wherein the porous material layer (2) is a porous plastic of an interconnected cell type, polyurethane and/or acrylate is added with a foaming agent and an additive, stirred and uniformly dispersed, and then a coating is formed by spraying or coating.

7. The fully flexible semiconductor device package structure according to claim 6, wherein the foaming agent is a surfactant foaming material comprising sodium lauryl sulfate and/or sodium fatty alcohol-polyoxyethylene ether sulfate, the foaming agent accounts for 1 to 10 parts by weight of 100 parts by weight, and the additive is a stabilizer.

Technical Field

The invention relates to a fully flexible semiconductor device packaging structure, and belongs to the technical field of semiconductor device packaging structures.

Background

With the development of the flexible display field, a series of novel electronic devices have also obtained a new development opportunity. Among them, high-end foldable smart phones have developed a new generation of products with unique performance advantages, taking advantage of the advantages of flexible display technology. However, the mobile phone is only one corner of the iceberg in the future flexible display field. By means of the characteristics of light and thin flexible display, difficult breakage and flexibility, a large number of product fields such as wearable equipment, electronic readings, automobile electronics and the like can be combined with the advantages of new technologies to develop iterative products.

In the field of semiconductor devices, with the continuous development of mechanics, materials and manufacturing process levels, more electronic components are increasingly miniaturized, modularized and integrated. The new technologies of printed electronics and the like enable electronic components to develop in a direction of flattening, and even achieve planarization. The miniaturized electronic technology also brings new benefits to the flexible electronic technology, in particular to flexible wearable products. The current foldable mobile phone is taken as an example, the foldable mobile phone really realizes the folding, namely the folding part displayed on the screen of the mobile phone, and the electronic components in other display areas, especially the mobile phone, do not realize the flexibility. However, in the field of wearable electronics, as well as future flexible cell phones and also flexible readers, the entire product is required to be flexible. Therefore, not only needs to consider the miniaturization of electronic components, but also how to assemble various electronic components together with the flexible display to form a whole set of flexible electronic product.

The assembly of fully flexible electronic devices requires several considerations. Whether silicon-based electronic devices or emerging flexible electronic devices are manufactured on a flexible substrate, and then the electronic devices are bonded and packaged with other upper and lower functional layers. Inside the plane, scientists have achieved flexibility through various new technologies and materials, such as a group of scientists has proposed to use a soft printing-based transfer method to achieve integration of silicon-based flexible electronics or silicon-based semiconductor thin films to achieve flexibility. From the perspective of packaging, it is more important to study how to organically combine functions together, so as to ensure both the flexibility and the functionality and stability of the device, for example, considering the problem of heat dissipation.

Disclosure of Invention

The invention aims to provide a fully flexible semiconductor device packaging structure, which adopts a multifunctional material and a double-layer functional bonding material to successfully endow the flexible electronic with the required bending resistance, and the number of times of bending can reach more than 20 ten thousand.

In order to solve the technical problems, the invention adopts the following technical scheme:

a full-flexible semiconductor device packaging structure is arranged on a flexible semiconductor device, the flexible semiconductor device comprises a display layer, an electronic element layer and a base material, wherein the electronic element layer is positioned between the display layer and the base material; the packaging structure is positioned between the display layer and the base material, and comprises a porous material layer and an inorganic filler layer, wherein the porous material layer is positioned between the display layer and the electronic element layer, and the inorganic filler layer is positioned between the porous material layer and the electronic element layer.

In the foregoing fully flexible semiconductor device packaging structure, the inorganic filler layer is formed by mixing an adhesive and inorganic particles, the inorganic particles are aluminum oxide, aluminum nitride, silicon dioxide, and alumina ceramics, or a mixture of aluminum oxide and/or aluminum nitride and/or silicon dioxide and/or alumina ceramics, and the adhesive is epoxy resin type, acrylate type, or organic silicon type.

In the fully flexible semiconductor device packaging structure, the inorganic filler layer is formed by mixing 100 parts by weight of adhesive and 10 to 50 parts by weight of inorganic particles, the inorganic filler layer covers the electronic element, and the thickness of the inorganic filler layer above the electronic element is 5 to 20 μm.

In the fully flexible semiconductor device packaging structure, the inorganic filler layer is prepared by the following method: the inorganic particles and the binder are stirred and uniformly dispersed, and then the coating is formed by spraying or coating.

In the foregoing fully flexible semiconductor device packaging structure, the material of the porous material layer includes polyurethane and/or acrylate, and the thickness of the porous material layer is 100 to 300 μm.

In the foregoing fully flexible semiconductor device packaging structure, the porous material layer is a continuous-foaming porous plastic, polyurethane and/or acrylate is added with a foaming agent and an additive, stirred and uniformly dispersed, and then a coating is formed by spraying or coating.

In the fully flexible semiconductor device packaging structure, the foaming agent is a surfactant foaming material and comprises lauryl sodium sulfate and/or fatty alcohol-polyoxyethylene ether sodium sulfate, the foaming agent accounts for 1-10 parts by weight in 100 parts by weight, and the additive is a stabilizer.

Compared with the prior art, the invention successfully endows the flexible electronic with the bending resistance required by the flexible electronic by adopting the multifunctional material and the double-layer functional bonding material, and the number of times of bending bearing can reach more than 20 ten thousand. And has the following advantages: 1. by using the inorganic particles with high thermal conductivity and high resistivity, the heat of a chip or other electronic components can be effectively dispersed to the whole plane, and the possibility of heat concentration is effectively prevented; 2. the thin electronic element, such as a patch electronic element, is packaged, so that the stability of the electronic element can be effectively ensured, and the electronic element is not separated in the bending process; 3. the inorganic filling layer can be realized by spraying, coating and other modes, does not have complex operations such as high temperature and the like, and does not influence the performance of the electronic element; 4. the porous material bonding layer can greatly improve the bending degree and reduce the internal stress concentration; 5. the porous material is also an important impact buffer layer, and when the porous material is impacted, the impact on the display layer can be effectively reduced, and meanwhile, internal electronic elements are protected; 6. in future, the whole thickness of a fully flexible electronic device, such as an electronic reader, is smaller and smaller, the bending condition required in the use process is more and more complex, even the partially and completely folded ultralow curvature occurs, and the stress concentration can be effectively prevented by using the porous material and combining with the inorganic filler layer for packaging, so that the stability of the device is improved.

Drawings

FIG. 1 is a schematic structural view of embodiment 1 of the present invention;

FIG. 2 is a schematic structural view of embodiment 2 of the present invention;

FIG. 3 is a schematic structural view of embodiment 3 of the present invention;

fig. 4 is a structural diagram illustrating the bending effect of the present invention.

Reference numerals: 1-display layer, 2-porous material layer, 3-electronic element layer, 4-inorganic filler layer and 5-base material.

The invention is further described with reference to the following figures and detailed description.

Detailed Description

Example 1 of the invention: a fully flexible semiconductor device packaging structure is arranged on a flexible semiconductor device, the flexible semiconductor device comprises a display layer 1, an electronic element layer 3 and a substrate 5, wherein the electronic element layer 3 is positioned between the display layer 1 and the substrate 5; the packaging structure is positioned between a display layer 1 and a base material 5, and comprises a porous material layer 2 and an inorganic filler layer 4, wherein the porous material layer 2 is positioned between the display layer 1 and an electronic element layer 3, and the inorganic filler layer 4 is positioned between the porous material layer 2 and the electronic element layer 3.

The inorganic filler layer 4 is formed by mixing an adhesive and inorganic particles, the inorganic particles are aluminum oxide, and the adhesive is epoxy resin type, acrylate type or organic silicon type. The inorganic filler layer is sprayed on the electronic element and the base material 5, the inorganic filler layer 4 is formed by mixing 100 parts by weight of adhesive and 30 parts by weight of inorganic particles, the inorganic filler layer 4 covers the electronic element, and the thickness of the inorganic filler layer 4 above the electronic element is 5 mu m. The maximum thickness of the patch electronic component is 100 μm, so the spray thickness is 105 μm. The inorganic filler layer 4 is prepared by the following method: the inorganic particles and the binder are stirred and uniformly dispersed, and then the coating is formed by spraying or coating.

The porous material layer 2 is attached to the inorganic filler layer 4 by coating, the manufacturing material of the porous material layer 2 comprises polyurethane, and the thickness of the porous material layer 2 is 100 μm. The porous material layer 2 is a continuous-air-bubble type porous plastic, polyurethane and/or acrylate is added with a foaming agent and an additive, stirred and uniformly dispersed, and then a coating is formed by spraying or coating. The foaming agent is a surfactant foaming material and comprises lauryl sodium sulfate and/or fatty alcohol-polyoxyethylene ether sodium sulfate, the foaming agent accounts for 1-10 parts by weight in 100 parts by weight, namely the weight of the foaming agent accounts for 1-10% of the weight of the porous material layer, the additive is a stabilizer, the stabilizer is in a conventional specification, and no special requirement is made here.

Example 2: a fully flexible semiconductor device packaging structure is arranged on a flexible semiconductor device, the flexible semiconductor device comprises a display layer 1, an electronic element layer 3 and a substrate 5, wherein the electronic element layer 3 is positioned between the display layer 1 and the substrate 5; the packaging structure is positioned between a display layer 1 and a base material 5, and comprises a porous material layer 2 and an inorganic filler layer 4, wherein the porous material layer 2 is positioned between the display layer 1 and an electronic element layer 3, and the inorganic filler layer 4 is positioned between the porous material layer 2 and the electronic element layer 3.

The inorganic filler layer 4 is formed by mixing an adhesive and inorganic particles, the inorganic particles are silica particles, and the adhesive is epoxy resin type, acrylate type or organic silicon type. The inorganic filler layer is sprayed on the electronic element and the base material 5, the inorganic filler layer 4 is formed by mixing 100 parts by weight of adhesive and 20 parts by weight of inorganic particles, the inorganic filler layer 4 covers the electronic element, and the thickness of the inorganic filler layer 4 above the electronic element is 20 mu m. The maximum thickness of the patch electronic component is 80 μm, so the spray thickness is 100 μm. The inorganic filler layer 4 is prepared by the following method: the inorganic particles and the binder are stirred and uniformly dispersed, and then the coating is formed by spraying or coating.

The material for manufacturing the porous material layer 2 comprises polyurethane, and the thickness of the porous material layer 2 is 120 μm. The porous material layer 2 is a continuous-air-bubble type porous plastic, polyurethane and/or acrylate is added with a foaming agent and an additive, stirred and uniformly dispersed, and then a coating is formed by spraying or coating. The foaming agent is a surfactant foaming material and comprises lauryl sodium sulfate and/or fatty alcohol-polyoxyethylene ether sodium sulfate, the foaming agent accounts for 1-10 parts by weight in 100 parts by weight, namely the weight of the foaming agent accounts for 1-10% of the weight of the porous material layer, the additive is a stabilizer, the stabilizer is in a conventional specification, and no special requirement is made here.

Example 3: a fully flexible semiconductor device packaging structure is arranged on a flexible semiconductor device, the flexible semiconductor device comprises a display layer 1, an electronic element layer 3 and a substrate 5, wherein the electronic element layer 3 is positioned between the display layer 1 and the substrate 5; the packaging structure is positioned between a display layer 1 and a base material 5, and comprises a porous material layer 2 and an inorganic filler layer 4, wherein the porous material layer 2 is positioned between the display layer 1 and an electronic element layer 3, and the inorganic filler layer 4 is positioned between the porous material layer 2 and the electronic element layer 3.

The inorganic filler layer 4 is formed by mixing an adhesive and inorganic particles, the inorganic particles are aluminum nitride, and the adhesive is epoxy resin type, acrylate type or organic silicon type. The inorganic filler layer 4 is formed by mixing 100 parts by weight of adhesive and 40 parts by weight of inorganic particles, the inorganic filler layer 4 covers the electronic element, and the thickness of the inorganic filler layer 4 above the electronic element is 15 mu m. The inorganic filler layer 4 is prepared by the following method: the inorganic particles and the binder are stirred and uniformly dispersed, and then the coating is formed by spraying or coating. The material for manufacturing the porous material layer 2 comprises acrylate, and the thickness of the porous material layer 2 is 130 μm. The foaming agent is a surfactant foaming material and comprises lauryl sodium sulfate and/or fatty alcohol-polyoxyethylene ether sodium sulfate, the foaming agent accounts for 1-10 parts by weight in 100 parts by weight, namely the weight of the foaming agent accounts for 1-10% of the weight of the porous material layer, the additive is a stabilizer, the stabilizer is in a conventional specification, and no special requirement is made here.

First we divide the main functional layers into a display layer, a packaging material layer, an electronic component layer, and a substrate layer. The packaging material layer is the key point of the invention, and other layers can be flexibly manufactured by the prior art and the future new technology, and each layer has good flexible and bendable characteristics. Then, when the display layer and the electronic element layer are simply bonded together by using an adhesive, the flexibility of the device is greatly reduced due to the increase of the whole thickness, and in the bending process, the interface needs to bear larger application, so that not only is the bonding easy to cause problems, but also the electronic device is subjected to additional stress, and the service life is shortened. Therefore, our encapsulating material technology will use multi-layer gradient encapsulation and use porous material to improve the extensibility of the encapsulating material itself.

The packaging material layer is divided into two functional layers, one is an inorganic filler layer and the other is a porous material layer. The porous material layer 2 is a continuous-air-bubble type porous plastic, polyurethane and/or acrylate is added with a foaming agent and an additive, stirred and uniformly dispersed, and then a coating is formed by spraying or coating.

An inorganic filler layer: with the development of technology, electronic components tend to be miniaturized more and more, and more chip-mounted semiconductor components are assembled into circuits. In addition, the development of various printed electronics technologies will allow more functional electronic components to be integrated directly onto the flexible substrate. With the development of electronic components with low power consumption, the amount of heat generated by the circuit is decreasing. However, due to the high integration and modularity of the circuits, the space left for heat dissipation of electronic components is also extremely limited. Therefore, when a multilayer circuit is packaged, the packaging material of the present invention employs an inorganic filler layer adjacent to the electronic component layer, which is obtained by mixing an adhesive with inorganic particles having high thermal conductivity. The material of the inorganic particles may be alumina, aluminum nitride, silicon dioxide or alumina ceramics, which have high electrical resistivity, good insulating properties and good thermal conductivity. The heat of the electronic element can be effectively dispersed to the whole plane, so that the purpose of heat dissipation is realized; the main material of the inorganic filler layer can be adhesive made of polyurethane or acrylic ester, the main component of the adhesive is set as 100 parts (weight ratio), the adding amount of the inorganic filler is usually 10-50 parts, and the thickness is increased by 5-20 μm after the final electronic element is covered.

Porous material layer: the porous material has good ductility and plasticity, is an excellent buffer layer porous material layer, can still keep elastic deformation when the compression or tensile strain rate is more than 50 percent, can keep good performance in a bending state, and can restore to the original shape after deformation recovery. In addition, due to the particularity of the porous material, if local damage occurs in multiple deformation, the overall performance is not affected, and good performance can be continuously maintained in a new state. The thermodynamic properties and the display layer of the electronic element, the inorganic filler layer on the electronic element or the base material are greatly different, and the porous material layer can be used as a buffer layer in the temperature rising and reducing processes of the device, so that the local separation is effectively prevented. More importantly, during the bending process, due to the small deformation of the electronic component, the local bending is performed with a small curvature radius, and the local stress is too large. Therefore, the use of a highly ductile porous material can effectively prevent this from occurring. In addition, due to the presence of the buffer layer, the device can achieve bending with a smaller radius of curvature, i.e. a larger degree of bending, at locations where there are no semiconductor elements. The material main body of the porous material can be polyurethane or acrylate, and in order to reduce the inconsistency among layers, the thickness of the material main body is 100-300 mu m as long as the material main body of the inorganic filler.