阅读说明：本技术 高频模块 (High frequency module ) 是由 野村忠志 森本裕太 小见山稔 胜部彰夫 于 2018-06-28 设计创作，主要内容包括：维持部件间屏蔽件的特性,并且减少由设置部件间屏蔽件引起的对布线基板的损坏。高频模块1a具备布线基板2、安装于布线基板2的上表面2a的多个部件3a～3d、安装于部件3b与部件3c之间的屏蔽部件4、覆盖各部件3a～3d以及屏蔽部件4的密封树脂层5、以及覆盖密封树脂层的表面的屏蔽膜6,在密封树脂层5的上表面5a形成供屏蔽部件4露出的凹部10,并且该凹部10不到达密封树脂层5的侧面地形成于边缘的内侧,屏蔽膜6还覆盖凹部10的壁面10a以及屏蔽部件4经由凹部10露出的部分。(The characteristics of the inter-component shield are maintained, and damage to the wiring substrate caused by the provision of the inter-component shield is reduced. The high-frequency module 1a includes a wiring substrate 2, a plurality of members 3a to 3d mounted on an upper surface 2a of the wiring substrate 2, a shielding member 4 mounted between the member 3b and the member 3c, a sealing resin layer 5 covering the members 3a to 3d and the shielding member 4, and a shielding film 6 covering a surface of the sealing resin layer, wherein a recess 10 in which the shielding member 4 is exposed is formed in the upper surface 5a of the sealing resin layer 5, the recess 10 is formed inside an edge so as not to reach a side surface of the sealing resin layer 5, and the shielding film 6 further covers a wall surface 10a of the recess 10 and a portion in which the shielding member 4 is exposed through the recess 10.)

1. A high-frequency module is provided with:

a wiring substrate;

a first member and a second member mounted on a main surface of the wiring substrate;

a conductive member mounted between the first member and the second member on the main surface of the wiring substrate;

a sealing resin layer that has a contact surface that contacts the wiring substrate, an opposing surface that opposes the contact surface, and a side surface that connects edges of the contact surface and the opposing surface to each other, and that covers the wiring substrate, the first member, the second member, and the conductive member; and

a shielding film covering at least the facing surface and the side surface of the sealing resin layer,

the conductive member itself is a conductor, or the conductive member has a plate-like conductor having one surface facing the first member side and the other surface facing the second member side,

forming a recess from the opposed surface of the sealing resin layer toward the conductive member so as to expose a part of the conductive member, the recess being formed inside the sealing resin not reaching a side surface of the sealing resin,

the shielding film also covers the wall surface of the recess and the exposed portion of the conductive member.

2. The high-frequency module as claimed in claim 1,

the magnetic film is formed between the sealing resin layer and the shielding film.

3. The high-frequency module as claimed in claim 1,

the magnetic film is formed to cover the shielding film.

4. High frequency module according to claim 2 or 3,

the magnetic film is also formed on the wall surface of the recess.

5. The high-frequency module according to any one of claims 1 to 4,

there are a plurality of the above-mentioned conductive members,

the recessed portions are provided corresponding to the respective conductive members.

6. The high-frequency module according to any one of claims 1 to 4,

there are a plurality of the above-mentioned conductive members,

the concave portion has:

one having a bottom portion formed at a depth at which the plurality of conductive members are not exposed; and

and a plurality of through parts provided on the bottom surface having the bottom part, and through which the plurality of conductive members are exposed, respectively.

7. The high-frequency module according to any one of claims 1 to 4,

there are a plurality of the above-mentioned conductive members,

the recess is a single recess in which all of the plurality of conductive members are exposed.

8. The high-frequency module according to any one of claims 1 to 7,

the concave portion has a shape expanding in a direction from the abutting surface of the sealing resin layer toward the facing surface.

Technical Field

The present invention relates to a high-frequency module provided with a shield.

Background

In a high-frequency module mounted in a mobile terminal device or the like, a shielding film may be formed on a surface of a resin layer sealing a mounting member in order to prevent noise from outside from affecting the mounting member. In addition, when a plurality of components are mounted, a shield between the components may be provided in order to prevent noise radiated from the components themselves from interfering with each other. For example, as shown in fig. 15, in a high-frequency module 100 described in patent document 1, a plurality of members 102a and 102b are mounted on an upper surface 101a of a wiring substrate 101, and the members 102a and 102b are sealed with a sealing resin layer 103. The surface of the sealing resin layer 103 is covered with a shield layer 104, and a shield wall 105a is formed between the member 102a and the member 102 b.

Patent document 1: japanese patent laid-open No. 2015-111802 (see paragraphs 0039 to 0047, FIG. 5, etc.)

However, in the conventional high-frequency module 100, a through groove is formed in the sealing resin layer 103 by laser processing, dicing, or the like in order to form the shield wall 105a, and therefore damage to the wiring substrate 101 becomes a problem. Therefore, if a gap is provided between the wiring substrate 101 and the upper surface 101a of the wiring substrate 101 as in the case of the shield wall 105b, damage to the wiring substrate 101 can be reduced, but in this case, the function as an inter-component shield is reduced.

Disclosure of Invention

The present invention has been made in view of the above-described problems, and an object thereof is to provide a high-frequency module in which damage to a wiring board due to the provision of an inter-component shield is reduced while maintaining the characteristics of the inter-component shield.

In order to achieve the above object, a high-frequency module according to the present invention includes: a wiring substrate; a first member and a second member mounted on a main surface of the wiring substrate; a conductive member mounted between the first member and the second member on the main surface of the wiring substrate; a sealing resin layer that has a contact surface that contacts the wiring substrate, an opposing surface that opposes the contact surface, and a side surface that connects edges of the contact surface and the opposing surface to each other, and that covers the wiring substrate, the first member, the second member, and the conductive member; and a shielding film covering at least the facing surface and the side surface of the sealing resin layer, wherein the conductive member itself is a conductor, or the conductive member has a plate-shaped conductor having one surface facing the first member side and the other surface facing the second member side, a recess is formed from the facing surface of the sealing resin layer toward the conductive member so as to expose a part of the conductive member, the recess is formed inside the sealing resin not reaching the side surface of the sealing resin, and a wall surface of the recess and an exposed part of the conductive member are covered by the shielding film.

According to this configuration, since the recess formed in the sealing resin layer is formed to a depth at which the conductive member is exposed, that is, a depth that does not reach the main surface of the wiring substrate, damage to the wiring substrate can be reduced even if the recess is formed by laser processing, dicing, or the like. Further, since the wall surface of the recess is covered with the shield film, the shield film in this portion (recess) can be made to function as an inter-member shield between the first member and the second member. Further, the conductive member is disposed in the gap between the recess and the wiring board, but since the member itself is a conductor or the member is a member having a plate-like conductor with one surface facing the first member side and the other surface facing the second member side, the conductive member can also function as a part of the inter-member shield between the first member and the second member. Therefore, even if the recess has a depth not reaching the main surface of the wiring substrate, the characteristics of the inter-component shield between the first component and the second component can be maintained. Further, since the concave portion is formed inside the facing surface of the sealing resin layer, the concave portion does not cut the sealing resin layer. Therefore, deterioration in mechanical strength of the high-frequency module due to formation of the recess in the sealing resin layer can be prevented.

Further, the sealing resin layer may be provided with a magnetic film formed between the sealing resin layer and the shielding film.

According to this structure, low-frequency noise can be blocked more effectively.

Further, the shielding film may be provided with a magnetic film formed so as to cover the shielding film.

According to this structure, low-frequency noise can be blocked more effectively.

The magnetic film may be formed on the wall surface of the recess.

According to this configuration, low-frequency noise can be shielded more effectively.

Further, the conductive member may be provided in plural, and the recessed portion may be provided corresponding to each of the conductive members.

With this configuration, the recesses can be easily formed by laser processing or the like.

Further, there may be a plurality of the conductive members, and the recess may have: one having a bottom portion formed at a depth at which the plurality of conductive members are not exposed; and a plurality of through parts provided on the bottom surface having the bottom part, and through which the plurality of conductive members are exposed, respectively.

According to this configuration, since the opening of the recess can be easily enlarged, for example, when the shield film is formed by using a thin film forming technique such as sputtering, the thickness of the shield film in the recess can be easily increased, and the characteristics of the inter-component shield between the first member and the second member can be improved.

Further, the conductive member may be provided in plural, and the recessed portion may be a single recessed portion in which all of the conductive members of the plural conductive members are exposed.

According to this configuration, since the opening of the recess can be easily enlarged, for example, when the shield film is formed by using a thin film forming technique such as sputtering, the thickness of the shield film in the recess can be easily increased, and the characteristics of the inter-component shield between the first member and the second member can be improved.

Further, the recessed portion may have a shape expanding in a direction from the abutting surface of the sealing resin layer toward the facing surface.

According to this configuration, the area of the intrusion port of the material for forming the shield film into the recess can be easily enlarged when forming the shield film, and the characteristics of the inter-component shield between the first member and the second member can be improved.

According to the present invention, since the recess formed in the sealing resin layer is formed to a depth at which the conductive member is exposed, that is, a depth that does not reach the main surface of the wiring substrate, damage to the wiring substrate can be reduced even if the recess is formed by laser processing, dicing, or the like. Further, since the wall surface of the recess is covered with the shield film, the shield film in this portion (recess) can be made to function as an inter-member shield between the first member and the second member. Further, the conductive member is disposed in the gap between the recess and the wiring board, but since the member itself is a conductor or the member is a member having a plate-like conductor with one surface facing the first member side and the other surface facing the second member side, the conductive member can also function as a part of the inter-member shield between the first member and the second member. Therefore, even if the recess has a depth not reaching the main surface of the wiring substrate, the characteristics of the inter-component shield between the first component and the second component can be maintained. Further, since the concave portion is formed inside the facing surface of the sealing resin layer, the concave portion does not cut the sealing resin layer. Therefore, deterioration in mechanical strength of the high-frequency module due to formation of the recess in the sealing resin layer can be prevented.

Drawings

Fig. 1 is a sectional view of a high-frequency module according to a first embodiment of the present invention.

Fig. 2 is a plan view of the high-frequency module of fig. 1 with the shielding film and the sealing resin layer removed.

Fig. 3 is a diagram for explaining a concave portion formed in the sealing resin layer.

Fig. 4 is a diagram showing a relationship between the shape of the recess and the film thickness of the shielding film formed on the wall surface of the recess.

Fig. 5 is a diagram showing a modification of the arrangement of the shield member.

Fig. 6 is a sectional view of a high-frequency module according to a second embodiment of the present invention.

Fig. 7 is a plan view of the high-frequency module of fig. 6 with the shielding film and the sealing resin layer removed.

Fig. 8 is a diagram showing a modification of the arrangement of the shield member.

Fig. 9 is a diagram showing a modification of the shape of the recess.

Fig. 10 is a diagram showing another modification of the shape of the recess.

Fig. 11 is a sectional view of a high-frequency module according to a third embodiment of the present invention.

Fig. 12 is a view showing a modification of the magnetic sheet of fig. 11.

Fig. 13 is a sectional view of a high-frequency module according to a fourth embodiment of the present invention.

Fig. 14 is a view showing a modification of the magnetic film of fig. 13.

Fig. 15 is a cross-sectional view of a conventional high-frequency module.

Detailed Description

< first embodiment >

A high-frequency module 1a according to a first embodiment of the present invention will be described with reference to fig. 1 to 4. Fig. 1 is a cross-sectional view of the high-frequency module, and is a cross-sectional view in the direction of arrow a-a in fig. 2, fig. 2 is a plan view of the high-frequency module 1a with the shielding film 6 and the sealing resin layer 5 removed, fig. 3 is a view for explaining the recess 10, and fig. 4 is a view showing the relationship between the shape of the recess 10 and the film thickness of the shielding film 6 formed on the wall surface 10a of the recess 10.

As shown in fig. 1, the high-frequency module 1a of this embodiment includes a wiring substrate 2, a plurality of members 3a to 3d and a shielding member 4 mounted on an upper surface 2a of the wiring substrate 2, a sealing resin layer 5 laminated on the upper surface 2a of the wiring substrate 2, and a shielding film 6 covering the sealing resin layer 5, and is mounted on, for example, a mother substrate of an electronic device using a high-frequency signal.

The wiring substrate 2 is formed of, for example, low-temperature co-fired ceramic, glass epoxy, or the like, and the mounting electrodes 7 for mounting the components 3a to 3d and the shield member 4 are formed on the upper surface 2a (corresponding to the "main surface of the wiring substrate" in the present invention) of the wiring substrate 2. A plurality of external electrodes (not shown) for external connection are formed on the lower surface 2b of the wiring substrate 2. Various internal wiring electrodes 8 and via conductors 9 are formed inside the wiring substrate 2. In fig. 1, only the ground electrode is shown as the internal wiring electrode 8, and the others are not shown.

The mount electrode 7, the internal wiring electrode 8, and the external electrode are each formed of a metal such as Cu, Ag, or Al, which is generally used as a wiring electrode. The via conductor 9 is made of metal such as Ag or Cu. Further, the mounting electrodes 7 and the external electrodes may be plated with Ni/Au.

The components 3a to 3d are constituted by chip components such as a semiconductor element made of a semiconductor such as Si or GaAs, a chip inductor, a chip capacitor, and a chip resistor, and are mounted on the wiring substrate 2 by a general surface mounting technique such as solder bonding. In this embodiment, the members 3a to 3c are active members such as semiconductor elements, and the member 3d is formed of a passive member such as a chip capacitor.

The shield member 4 (corresponding to a "conductive member" of the present invention) is formed of a rectangular parallelepiped Cu block, and is mounted on the upper surface 2a of the wiring substrate 2 together with other members 3a to 3 d. The shield member 4 is connected to a ground electrode (internal wiring electrode 8) via the mount electrode 7 and the via conductor 9. The shape of the shield member 4 is not limited to a rectangular parallelepiped, and is preferably the same shape as any of the other members 3a to 3 d. In this way, the same mountability as that of the other members 3a to 3d can be ensured. The conductor forming the shield member 4 is not limited to Cu, and can be appropriately changed to Al, Ag, or the like.

The sealing resin layer 5 is disposed on the upper surface 2a of the wiring substrate 2, and covers the respective members 3a to 3d and the shield member 4. The sealing resin layer 5 can be formed of a resin generally used as a sealing resin, such as an epoxy resin. Here, the upper surface 5a of the sealing resin layer 5 corresponds to the "opposed surface of the sealing resin layer" of the present invention, and the lower surface 5b corresponds to the "contact surface of the sealing resin layer" of the present invention.

Further, a recess 10 for exposing a part of the upper surface 4a of the shielding member 4 is formed in the upper surface 5a of the sealing resin layer 5. The recess 10 is formed in a truncated pyramid shape extending in a direction from the lower surface 5b toward the upper surface 5a of the sealing resin layer 5 with the upper surface 4a of the shield member 4 as a bottom surface (see fig. 1 and 3). The recess 10 has an opening 10b in the upper surface 5a of the sealing resin layer 5. That is, the concave portion 10 is disposed inside the edge of the sealing resin layer 5 so as not to reach the side surface 5c of the sealing resin layer 5. The recess 10 can be formed by laser processing, for example. The shape of the concave portion 10 is not limited to the truncated pyramid shape, and can be appropriately changed.

The shielding film 6 covers the upper surface 5a and the side surface 5c of the sealing resin layer 5, the side surface 2c of the wiring substrate 2, the wall surface 10a of the recess 10, and the upper surface 4a of the shielding member 4 exposed through the recess 10. Then, the shield film 6 and the shield member 4 covering the wall surface 10a of the recess 10 form an inter-member shield between the member 3b and the member 3 c. In the case of forming the recess 10 by laser processing, when the upper surface 4a of the shield member 4 is exposed, the oxide film is removed by slightly scraping the upper surface 4a, whereby the connection resistance between the shield film 6 and the shield member can be reduced. Here, the members 3b and 3c which are targets of the inter-member shield correspond to the "first member" and the "second member" of the present invention.

Further, a part of the edge of the ground electrode (internal wiring electrode 8) is exposed from the side surface 2c of the wiring substrate 2, and the shielding film 6 is connected to the ground electrode at this position, whereby the shielding film 6 is grounded. Further, since the shielding film 6 is also in contact with the shielding member 4, the ground can be grounded via the shielding member 4. The shielding film 6 can be formed by a film forming method such as a sputtering method or a vapor deposition method, and can have a multilayer structure including an adhesion film laminated on the upper surface 5a of the sealing resin layer 5, a conductive film laminated on the adhesion film, and a protective film laminated on the conductive film.

In this case, the adhesion film is provided to improve the adhesion strength between the conductive film and the sealing resin layer 5, and may be formed of a metal such as SUS, for example. The conductive film is a layer that serves the actual shielding function of the shielding film 6, and can be formed of any metal of Cu, Ag, and Al, for example. The protective film is provided for preventing the conductive film from being corroded or scratched, and can be formed of SUS, for example.

When the shielding film 6 is formed by a film formation process such as a sputtering method or a vapor deposition method, the thickness of a portion covering the wall surface 10a of the recess 10 tends to be thinner than that of other portions. In order to ensure desired shielding characteristics, the thickness of the shielding film 6 is preferably about 2 μm. Therefore, the inventors measured how the film thickness of the shielding film 6 covering the wall surface 10a of the recess 10 changes according to the shape of the recess 10. Further, it was found that the film thickness of the wall surface 10a of the recess 10 is thicker as the material forming the shielding film 6 enters the recess 10, and the film thickness of the wall surface 10a of the recess 10 becomes thinner as the depth of the recess 10 becomes deeper. Therefore, when the length of the short side of the rectangular opening 10b in the lateral direction of the recess 10 formed in the upper surface 5a of the sealing resin layer 5 is W1 (see fig. 3) and the depth of the recess 10 is H1 (see fig. 1), fig. 4 is a graph showing how the ratio (W1/H1) of the film thickness to the length and depth of the short side changes. As a result:

(i) the thickness of the shielding film 6 when W1 and H1 were 500 μm (W1/H1 was 1.0) was 1.8 μm

(ii) The thickness of the shielding film 6 when W1 and H1 were 650 μm and 500 μm (W1/H1 was 1.33) was 3.2 μm

(iii) The thickness of the shielding film 6 when W1 and H1 were 800 μm and 500 μm (W1/H1 was 1.60) was 3.7 μm

(iv) The thickness of the shielding film 6 when W1 and H1 were 900 μm and 500 μm (W1/H1 was 1.80) was 4.1 μm

(v) The thickness of the shielding film 6 when W1 and H1 were 1000 μm and 500 μm (W1/H1 was 2.00) was 4.9 μm.

From these data, (W1/H1) is preferably 1.33 or more because the film thickness (═ 2 μm) of the shielding film 6 for obtaining the desired shielding characteristics can be ensured. In addition, according to the approximate line of the data, (W1/H1) is 1.02 or more, the film thickness (═ 2 μm) of the shielding film 6 for obtaining the desired shielding characteristics can be secured.

Therefore, according to the above-described embodiment, since the recess 10 formed in the sealing resin layer 5 is formed to a depth at which the upper surface 4a of the shield member 4 is exposed, that is, a depth that does not reach the upper surface 2a of the wiring substrate 2, damage to the wiring substrate 2 can be reduced even if the recess 10 is formed by laser processing, cutting, or the like. Further, since the wall surface 10a of the recess 10 is covered with the shielding film 6, the shielding film 6 in this portion (recess 10) can be made to function as an inter-component shield between the component 3b and the component 3 c. Further, since the shield member 4 made of Cu block is disposed in the gap between the recess 10 and the wiring substrate 2, the characteristics of the inter-member shield between the member 3b and the member 3c can be maintained even if the recess 10 does not reach the depth of the upper surface 2a of the wiring substrate 2. Further, since the concave portion 10 is formed inside the upper surface 5a of the sealing resin layer 5, the concave portion 10 does not cut the sealing resin layer 5. Therefore, deterioration in the mechanical strength of the high-frequency module 1a caused by formation of the recess 10 in the sealing resin layer 5 can be prevented.

Further, since the recess 10 has a shape expanding in the direction from the lower surface 5b toward the upper surface 5a of the sealing resin layer 5, the area of the penetration opening (opening 10b) of the material forming the shielding film toward the recess 10 can be easily enlarged when forming the shielding film 6, and the characteristics of the inter-component shield between the component 3b and the component 3c can be improved.

Since the shield member 3b and the shield member 3c are formed between the components by mounting one shield member 4, the space occupied by the shield member on the upper surface 2a of the wiring substrate 2 is small, and the degree of freedom in mounting the wiring substrate 2 is improved.

(modification of arrangement of Shielding Member)

In the above-described embodiment, the inter-component shield between the components 3b and 3c was described, but when it is desired to form the inter-component shield between the components 3c and 3a, another shield member 4 may be disposed between the components 3a and 3c as shown in fig. 5. In this case, another recess (not shown) may be formed so as to expose the upper surface 4a of the shielding member 4 disposed between the members 3a and 3c, and the shielding film 6 may be formed on the wall surface of the recess. The recess may have the same shape as the recess 10 described above. Here, the members 3a and 3c to be the targets of the inter-member shield also correspond to the "first member" and the "second member" of the present invention.

< second embodiment >

A high-frequency module 1b according to a second embodiment of the present invention will be described with reference to fig. 6 and 7. Fig. 6 is a cross-sectional view of the high-frequency module 1B, and is a cross-sectional view in the direction of the arrow B-B in fig. 7, and fig. 7 is a plan view of the high-frequency module 1B with the shielding film 6 and the sealing resin layer 5 removed.

The high-frequency module 1b of this embodiment differs from the high-frequency module 1a of the first embodiment described with reference to fig. 1 to 5 in that the structure of the shield between the components is different as shown in fig. 6 and 7. The other structures are the same as those of the high-frequency module 1a of the first embodiment, and therefore, the same reference numerals are given thereto, and the description thereof is omitted.

In this case, a plurality of (3 in the present embodiment) shield members 4 are disposed between the members 3b and 3 c. The shield members 4 are arranged in a line between the two members 3b, 3 c. Further, the concave portions 10 are provided on the upper surface 5a of the sealing resin layer 5 so as to correspond to the respective shield members 4. Each recess 10 is formed in a truncated pyramid shape as in the recess 10 of the first embodiment, and the wall surface 10a of each recess 10 and the upper surface 4a of the shield member 4 exposed through the recess 10 are covered with the shield film 6 (see fig. 6). Each shield member 4 is connected to a ground electrode (internal wiring electrode 8) via a via conductor 9.

According to this embodiment, since each recess 10 formed in the sealing resin layer 5 is formed to a depth at which the upper surface 4a of the shield member 4 is exposed, that is, a depth that does not reach the upper surface 2a of the wiring substrate 2, damage to the wiring substrate 2 can be reduced even if each recess 10 is formed by laser processing, dicing, or the like. Further, since the wall surface 10a of each recess 10 is covered with the shielding film 6, the shielding film 6 in this portion (recess 10) can be made to function as an inter-component shield between the component 3b and the component 3 c. Further, since the shield member 4 made of Cu blocks is disposed in each gap between each recess 10 and the wiring substrate 2, even if each recess 10 has a depth not reaching the upper surface 2a of the wiring substrate 2, the characteristics of the inter-component shield between the component 3b and the component 3c can be maintained. In addition, the forming region of the inter-component shield between the components 3b and 3c is wider than that of the first embodiment, so the shielding property is improved. Further, since the recesses 10 are formed inside the upper surface 5a of the sealing resin layer 5, the sealing resin layer 5 is not cut by the recesses 10. Therefore, deterioration in the mechanical strength of the high-frequency module 1a due to the formation of the recesses 10 in the sealing resin layer 5 can be prevented.

(modification of arrangement of Shielding Member)

In the above-described embodiment, the inter-component shield between the components 3b and 3c has been described, but when it is desired to form the inter-component shield between the components 3c and 3a, a plurality of other shield members 4 may be disposed between the components 3a and 3c as shown in fig. 8. In this case, a recess (not shown) may be formed in each of the shielding members 4 disposed between the members 3a and 3c, and the shielding film 6 may be formed on the wall surface of the recess. The recess may have the same shape as the recess 10 of the first embodiment. In fig. 7 and 8, the shielding members 4 are arranged at equal intervals on a straight line, but may be arranged at a position shifted from the straight line or at an unequal interval depending on the strength of electromagnetic interference distribution between the members.

(modification of concave shape)

In the second embodiment, the case where the concave portions 10 are formed for each shield member 4 has been described, but the configuration of the concave portions can be appropriately changed. For example, as shown in fig. 9, the recess 11 may be formed by one through-hole 11a formed at a depth at which the upper surface 4a of each shield member 4 is not exposed, and a plurality of through-holes 11b provided in the bottom surface 11a1 of the through-hole 11a of each shield member 4 and from which the upper surface 4a of each shield member 4 is exposed. In this case, the bottom portion 11a is formed as a common recess for the shield members 4, and therefore, the opening area is formed wide. Therefore, even if the shape is not extended like the above-described recess 10, the thickness of the shielding film 6 covering the wall surface (for example, 2 μm or more) can be easily ensured. Further, each penetrating portion 11b may not necessarily have a shape that is expanded because it is shallower in depth than the above-described concave portion 10.

In addition, as shown in fig. 10, when a plurality of shield members 4 are mounted, instead of forming the recess 10 for each shield member 4, one recess 12 may be formed to expose the upper surfaces 4a of all the shield members 4. In this case, the recess 12 is formed as a common recess for each shield member 4, and therefore, the opening area is formed wide. Therefore, even if the shape is not extended like the above-described recess 10, the thickness of the shielding film 6 covering the wall surface (for example, 2 μm or more) can be easily ensured.

< third embodiment >

A high-frequency module 1c according to a third embodiment of the present invention will be described with reference to fig. 11. Fig. 11 is a cross-sectional view of the high-frequency module 1c, which corresponds to fig. 1.

The high-frequency module 1c of this embodiment is different from the high-frequency module 1a of the first embodiment described with reference to fig. 1 to 5 in that a magnetic sheet 13 is further provided as shown in fig. 11. The other structures are the same as those of the high-frequency module 1a of the first embodiment, and therefore, the same reference numerals are given thereto, and the description thereof is omitted.

In this case, the magnetic sheet 13 (corresponding to the "magnetic film" of the present invention) is disposed on the upper surface 5a of the sealing resin layer 5. The recess 10 is formed by penetrating the magnetic sheet 13 and further recessing the inside of the sealing resin layer 5, and a part of the upper surface 4a of the shield member 4 is exposed from the bottom of the recess 10. In addition, the concave portion 10 is disposed inside the edge of the sealing resin layer 5 without reaching the side surface of the sealing resin layer 5, as in the first embodiment. The shielding film 6 covers the side surface 5c of the sealing resin layer 5, the side surface 2c of the wiring board 2, the portion of the magnetic sheet 13 not in contact with the upper surface 5a of the sealing resin layer 5, and the wall surface 10a of the recess 10 including the portion of the shielding member 4 exposed from the recess 10.

The magnetic sheet 13 can be formed of, for example, a metal sheet made of a magnetic material, a sheet made of a resin mixed with a magnetic material, or the like. Alternatively, the magnetic sheet 13 may be a laminated sheet in which a resin layer such as an adhesive material is laminated on the above sheet. The concave portion 10 of this embodiment can be formed, for example, by disposing a flat magnetic sheet 13 on the upper surface 5a of the sealing resin layer 5 in a state where the concave portion 10 is not formed, and then irradiating the magnetic sheet 13 with laser light from above to remove the portion of each of the magnetic sheet 13 and the sealing resin layer 5 where the concave portion 10 is formed.

According to this embodiment, noise at low frequencies, particularly 100KHz to 10MHz, can be blocked more effectively.

(modification of magnetic sheet)

In fig. 11, the magnetic sheet 13 is provided between the sealing resin layer 5 and the shielding film 6, but the magnetic sheet 13 may be provided on the upper surface of the shielding film 6 as shown in fig. 12, for example. In this case, the magnetic sheet 13 is adhered to the shield film 6 via an adhesive layer or the like. The magnetic sheet 13 has an opening 10b in the recess 10. In fig. 12, the magnetic sheet 13 is formed to cover substantially the entire upper surface 5a of the sealing resin layer 5 except for the recess 10, but may be configured to cover a part thereof. Even in this case, the noise at low frequencies, particularly 100KHz to 10MHz, can be blocked more effectively.

< fourth embodiment >

A high-frequency module 1d according to a fourth embodiment of the present invention will be described with reference to fig. 13. Fig. 13 is a cross-sectional view of the high-frequency module 1d, which corresponds to fig. 1.

The high-frequency module 1d of this embodiment is different from the high-frequency module 1a of the first embodiment described with reference to fig. 1 to 5 in that a magnetic film 14 is further provided as shown in fig. 13. The other structures are the same as those of the high-frequency module 1a of the first embodiment, and therefore, the same reference numerals are given thereto, and the description thereof is omitted.

In this case, the recess 10 similar to that of the first embodiment is formed in the sealing resin layer 5, and the upper surface 5a of the sealing resin layer 5 and the wall surface 10a of the recess 10 including the portion of the upper surface 4a of the shield member 4 exposed from the recess 10 are covered with the magnetic film 14. The shielding film 6 covers the side surface 5c of the sealing resin layer 5, the portion of the magnetic film 14 covering the upper surface 5a of the sealing resin layer 5, the portion of the magnetic film 14 covering the wall surface of the recess 10 (including the portion of the shielding member 4 exposed from the recess 10), and the side surface 2c of the wiring substrate 2.

In this embodiment, for example, after the recess 10 is formed on the upper surface 5a of the sealing resin layer 5, the magnetic film 14 is formed by a film forming process using sputtering, vapor deposition, or the like, and the shield film 6 is similarly formed thereon by sputtering, vapor deposition, or the like, with respect to the magnetic film 14 and the shield film 6. In this case, the plurality of high-frequency modules 1d are formed into an aggregate arranged in a matrix, the magnetic films 14 are collectively formed, and then the high-frequency modules 1d are singulated by cutting, laser processing, or the like, and then the shielding films 6 are formed. In this way, the magnetic film 14 does not cover the side surface 5c of the sealing resin layer 5, and the shielding film 6 covers the side surface 5 c. As another method for forming the magnetic film 14, a method of applying a magnetic paste to the upper surface 5a of the sealing resin layer 5 and the wall surface 10a of the recess 10 is also known. In addition, the magnetic film 14 can also be formed using a plating method.

According to this embodiment, noise at low frequencies, particularly 100KHz to 10MHz, can be blocked more effectively.

(modification of magnetic film)

In fig. 13, the magnetic film 14 is provided between the sealing resin layer 5 and the shielding film 6, but the magnetic film 14 may be provided so as to cover the shielding film 6 as shown in fig. 14. In this case, the magnetic film 14 is formed by a film formation process using sputtering, an evaporation method, or the like. The magnetic film 14 is also formed on the wall surface 10a of the recess 10. As other forming methods of the magnetic film 14, a method of coating a magnetic paste or a plating method may be used. Even in this case, the noise at low frequencies, particularly 100KHz to 10MHz, can be blocked more effectively.

The present invention is not limited to the above embodiments, and various modifications other than the above configuration can be made without departing from the spirit of the invention. For example, the configurations of the above embodiments and modifications may be combined.

In the above-described embodiments, since the shield film 6 is connected to the shield member 4 which is grounded, it is not necessary to expose the ground electrode (the internal wiring electrode 8) on the side surface 2c of the wiring substrate 2 and connect the ground electrode to the shield film 6.

The shield member 4 may be a conductor that forms noise between shield members, instead of a conductor (Cu block). The conductor for shielding noise is, for example, a plate-like conductor having one surface facing one of the 2 members for preventing noise interference and the other surface facing the other member, and specifically, a side electrode of a sheet-like member such as a chip capacitor, etc. may be mentioned. The conductor is not limited to the side electrode, and may be formed inside the shield member.

Industrial applicability

The present invention is applicable to various high-frequency modules including a sealing resin layer covering a component mounted on a wiring board, a shield covering a surface of the sealing resin layer, and a shield for preventing noise interference between the components.

Description of reference numerals: 1a to 1d … high frequency modules; 2 … wiring substrate; 3a … parts (first part, second part); 3b, 3c … parts (first part, second part); 4 … shield member (conductive member); 5 … sealing resin layer; 6 … shielding films; 10. 11, 12 … recess; 10a … wall; 11a … has a bottom; 11b … through-hole; 13 … magnetic sheet (magnetic film); 14 … magnetic film.